Investigations on nucleation kinetics,growth and characterization of sulphanilic acid single crystals

Nucleation parameters such as radius of critical nucleus, critical free energy change and interfacial tension were evaluated for Sulphanilic acid (SAA) single crystals. Metastable zone width and induction period values were determined to optimize the growth parameters. The interfacial tension values estimated using the experimentally determined induction period is found to be comparable with theoretical values. SAA crystals were grown with the optimized growth parameters. The formation of SAA crystals was confirmed by powder X‐ray diffraction and FT‐IR studies. The density measurements were carried out by both theoretical and experimental methods. The NLO behaviour of SAA crystals was tested by Kurtz‐ Perry technique. The mechanical hardness was studied by Vickers Microhardness tester. The UV‐Vis spectral analysis was carried out on the SAA crystals to study the optical properties. The laser damage threshold values of the SAA crystals are found to be 7.6 and 6.6 GW/cm² for single and multiple shots, respectively. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Solvent effects on the growth kinetics of subtilisin crystals

The effects of salts on subtilisin crystallization were investigated. Three salts—NaCl, NaNO₃ and NaSCN—were selected to study the effects of different anions on growth kinetics of three subtilisin mutants—Properase^®, Purafect^® and Purafect^®OX. The effectiveness of salts in decreasing the solubility of Properase^® and Purafect^® subtilisin followed the reverse order of the Hofmeister series: SCN⁻>NO₃⁻>Cl⁻. The average length and diameter of crystals were measured during crystallization. The nature of salt changed the length/diameter ratio of crystals, indicating the changes in the relative growth rate of different crystal faces. The required supersaturation, (c−s)/s, for a given growth rate increased in the order of NaCl, NaNO₃ and NaSCN. The observed trend in required supersaturation indicates a kinetic effect and was counter to the trend for the solubility data. A rationale is provided based on the influence of ion binding and kinetics on the energetics of crystal growth and growth rate is correlated to the molar Gibbs free energy of hydration of the anion.     

Oxidation kinetics of BaF2 single crystals

Oxidation of BaF₂ single-crystals as a result of annealing in air in the temperature range 600° to 900 °C leads to mechanical strengthening. The process kinetics was investigated. It is shown that oxidation takes place in the bulk of crystals owing to oxygen diffusion by formation and growth of oxidation centres. These centres are precipitates of a BaO phase which were revealed by chemical etching.     

Flux Bridgman growth and the influence of annealing temperatures on PL properties of ZnO single crystals

Transparent ZnO crystals were obtained by the flux Bridgman method from high temperature solution of 22 mol% ZnO‐78 mol% PbF₂ system. The influence of annealing temperatures on the photoluminescence (PL) of ZnO crystal was investigated. An ultraviolet emission peak at about 379 nm was observed in PL spectra and the peak position has a weak blueshift for annealed samples. A green band centered at 523 nm appeared in the annealed samples and its intensity enhanced with the increase of annealing temperatures, while the intensity of the ultraviolet peak decreased considerably. However, the ultraviolet emission peak became the strongest after annealing at 1000 °C. This phenomenon was considered to be associated with oxygen vacancy and F^‐ impurities induced by the PbF₂ flux. The results show that high temperature annealing in air seems helpful for improving the PL properties of ZnO crystal. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

The melt growth of oxide and related single crystals

This article reviews the principle changes which have occured during the last three years in the techniques used to produce single crystals of oxide and similar single crystals from the melt. The technological demands created by device applications are emphasized and the current state of knowledge upon the major crystalline defects is discussed. The role of accurate phase diagram analysis, the importance now attached to the atmosphere in which a crystal grows and the relevance of looking at crystals with greater resolution are stressed particularly.     

Preferred growth of bismuth single crystals

The results of the study of the factors influencing the orientation of the ( 111 ) cleavage plane of bismuth are presented. It has been observed that at high purity the growth rates and temperature gradients do influence the orientation whereas at low purities no such influence is observed.     

Effect of ultrasound on the growth of semiconductor single crystals

Crystallography Reports - The influence of ultrasound on striations in InSb, GaAs, and Bi-Sb single crystals grown by the modified Czochralski method was studied. Ultrasonic waves with a frequency...     

Optical imaging of the growth kinetics and polar morphology of zinc tris(thiourea) sulphate single crystals

Growth kinetics of zinc tris(thiourea) sulphate (ZTS) single crystals was imaged in two different growth geometries using laser shadowgraphy technique. Growth rates of the {010} and {001} faces were computed as a function of supersaturation. The time evolution of polar morphology of ZTS crystal based on the growth rates is presented. Except (00 ) face, all the other three faces are found to have a dead zone resulting in large induction period of growth. The anisotropy in the growth rates of the (001) and (00 ) faces was very high, resulting in polar morphology. Different chemical environments on two sides of the (001) slice are suggested as the possible cause for the polar morphology of the crystals. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

The influence of natural convection on the mass transfer kinetics in LPE growth

The simplified scheme has been suggested for quantitative estimation of the effect of natural convection on the LPE layers thickness while growing from a finite solution with parallel horizontal and vertical substrates. The convective-diffusive mass transfer model is being developed on the base of boundary layer approximation. In the case of horizontal growth the layer thickness is determined by effective solution thickness which is distinguished for an upper and lower substrate and depends on convection intensity. For the vertical growth system the expression describing the variation of layer thickness along the substrate has been obtained and the vertical temperature gradient necessary for eliminating a wedge shaped growth in this case is calculated. The experimental investigations of LPE growth of GaP layers from finite solution with horizontal and vertical substrates are carried out. The thickness and shape of LPE layers obtained in both cases coincide well with results of calculation.     

Nucleation kinetics and growth aspects of organic nonlinear optical L‐arginine trifluoroacetate single crystals

Experimental determination of solubility, metastable zonewidth and induction period for an organic nonlinear optical (NLO) L‐arginine trifluoroacetate (LATF) crystal is reported. The interfacial tension for different supersaturation conditions has been estimated for the LATF solution at 45°C. Bulk crystal of dimensions 57x5x3 mm³ has been grown by temperature lowering technique using optimized growth parameters. Powder X‐ray diffraction and FTIR studies confirm the crystalline nature and the functional groups of the grown crystals respectively. Linear optical property of the grown crystal has been studied by UV‐Vis spectrum. Thermal analyses have revealed that the compound is thermally stable upto 212°C. Kurtz powder SHG test confirm the nonlinear optical properties of the as‐grown LATF crystal. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Electrical conductivity of sulfamic acid single crystals

Single crystals of sulfamic acid have been grown by the method of slow evaporation at constant temperature. DC electrical conductivity was measured in the temperature range 300 ‐ 440 K along a, b and c‐axes. Conductivity measurements show slope change near 330 K and 410 K. The slope change observed around 330 K may be attributed as due to a phase transition which has been well supported by the DSC and DTA measurements. Slope change observed around 410 K is attributed as the onset of the thermal decomcoposition as evidenced by TGA curve. TGA studies show the crystal is very stable up to 440 K. Activation energies for the conduction process are calculated for all measured crystallographic directions. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Horizontal bridgman growth of gaas single crystals

In order to meet requirements for the preparation of low dislocation density GaAs single crystals a horizontal Bridgman type apparatus was designed. Construction of the apparatus allows the establishment of enhanced temperature stability of the arsenic source and hence better stability of the arsenic vapour pressure during the growth. This effect was achieved without application of heat pipes which are usually used for the improvement of thermal profile and temperature stability. The influence of different arsenic vapour pressures on the density of dislocations was confirmed in the course of this work.     

Growth mechanism of stearic acid single crystals

Micro-morphological observation of the growth patterns on the (001) surfaces of large single crystals of stearic acid grown from solution under moderate growth conditions was carried out by optical and electron microscopy. Two typical growth features, namely, growth spiral steps and two-dimensional (2-D) nucleation-like steps, were identified optically. Then, these patterns were observed in more detail by the replica method of electron microscopy and it was found that the steps are usually two to four times the length of the bimolecular growth unit. These growth units also revealed spiral growth and 2-D nucleation growth patterns.     

Optical and dielectric studies on succinic acid single crystals

Single crystals of ferroelectric succinic acid (SA) with very high degree of transparency were grown from aqueous solution by slow evaporation technique. Single crystal X‐ray diffraction analysis reveals that the crystal belongs to monoclinic system with the space group P2₁/c. Some physical parameters have been determined for grown crystal. The optical absorption study reveals the transparency of the crystal in the entire visible region and the cut off wave length was found to be 240 nm. The optical band gap is found to be 3.75 eV. The dependence of extinction coefficient (k) and refractive index (n) on the wavelength have also been reported. The presence of functional groups was determined qualitatively by using Fourier transform infrared spectrum (FTIR) from which force constant has been calculated. The dielectric constant was also studied as a function of frequency at room temperature and electrical conductivity has been calculated from the Cole‐Cole plot. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

A contribution to the study of the influence of impurities on the growth and some physical properties of TGS single crystals

Single crystals of TGS doped with Ni²⁺, Cu²⁺ and Fe³⁺ have been prepared under identical conditions by the method of temperature decrease (below the phase transition point). Presentation of the influence of impurities on the development of individual crystal faces is based on goniometric measurements. The influence of impurities on the domain structure of TGS is documented by microphotographs of domain structures and by investigation of the variation with time of the average domain width. It is shown that the distribution of impurities (between the liquid and solid phases) is approximately proportional to the concentrations of metal glycino chelates in the solution. From the results concerning the influence of impurities on various physical properties follows that the degree to which the properties are affected depends not only on the impurity concentration but also on the specific intensity of their action which is due to variations in the binding forces in the structure of TGS.     

Nucleation kinetics and growth of nonlinear optical bis (dimethyl sulfoxide) manganese mercury thiocyanate single crystals

Nonlinear optical (NLO) material of bis (dimethyl sulfoxide) manganese mercury thiocyanate (MMTD) was synthesized by two step reaction method. The solubility and metastable zonewidth were experimentally determined in order to optimize the growth parameters. Bulk crystals of MMTD were grown by slow cooling and slow evaporation methods. The structure of the grown crystal was confirmed by X‐ray diffraction analysis. Presence of functional groups and the coordination of Lewis base ligand of dimethyl sulfoxide (DMSO) were confirmed by FT‐IR analysis. Optical transparency of the grown crystals was studied by UV‐Vis spectroscopy. Nonlinear optical property of the grown crystal was confirmed by Kurtz powder method. Etching studies reveal the formation of triangular hillock etch patterns, indicative of 2D nucleation mechanism. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

On the distribution of growth directions of silver and other F.C.C. single crystals from the melt

Thin single crystals of pure Ag, its dilute alloys, Ni – 10 ˜ 60 wt.% Co and Fe – 35 wt.% Ni alloys were grown by the Bridgman method. A preference of growth directions of these crystals changes from the <111>direction towards <100>with increasing growth rate or alloying effect. These results are discussed from a characteristic of nucleus interfaces.     

Effects of meniscus on the directional growth of potassium niobate single crystals

The study of meniscus effects on the directional growth of single crystals of potassium niobate (KNbO₃) with a [110]_pc oriented seed by the top-seeded-solution-growth technique has been described. The directional growth of KNbO₃ single crystals has been illustrated for different crystallographic orientations of the crystal. Experimental results show that the shape of the solution flux meniscus, which is determined by a number of growth parameters, has a significant effect on growth rates on different 100_pc, 010_pc and 001_pc type surfaces. Findings based on this work enable one to select a dominant growth direction and hence to engineer the geometrical shaping of resultant KNbO₃ single crystals through careful control of growth parameters. Maximum crystal dimensions for the grown KNbO₃ along [100]_pc and [001]_pc achieved in this work are 34.0 and 31.2 mm, respectively.