ANALYSIS OF DUAL FREQUENCY CONFINED CAPACITIVELY COUPLED PLASMA AT LOW POWER

Confined dual frequency hydrogen plasma discharge has been investigated with microwave interferometer method and radial profiles are taken by Abel inversion technique. Dual radio-frequency sources, operating at 27.12MHz and 1.94MHz, are coupled to each other through the plasma. 27.12MHz RF power is used to enhance plasma density and 1.94MHz power is used to enhance ion acceleration energy to the electrode. Radial density profiles has been taken for comparing the effects of low frequency source that the secondary RF source causes reduction in plasma density due to the sheath expansion. Instead radial density profile is assumed as flat by most of the models, there is about 2.5eV of potential drop occurs from centre to boundary at 40W of primary source power. It has been observed that increasing sheath width (increasing the secondary source power to primary source power) reduces the bulk plasma volume and makes potential profile flattening in y direction. While the high frequency power is dissipated by electrons in the bulk plasma; low frequency power is mostly dissipated by ions in the sheath region. Using both high and low frequency power, we may control plasma density and ion acceleration energy to the electrode simultaneously.     

脉冲高能量密度等离子体薄膜制备与材料表面改性

脉冲高能量密度等离子体是一项全新的等离子体材料表面处理和薄膜制备技术。文章主要介绍了作者近几年来在这方面的研究成果。从理论和试验上研究了脉冲高能量密度等离子体的产生机制及其物理性质，研究了脉冲等离子体与材料相互作用的基本物理现象和物理机制，诊断测量表明，脉冲等离子体具有电子温度高（10－100eV）、等离子体密度高（10^14-10^16cm^-3）、定向速度高（－10^7cm/s）、功率大（10^4W/cm^2）等特点，在制备薄膜时具有沉积速率高，薄膜与基底粘结力强，并兼有激光表面处理、电子束处理、冲击波轰击、离子注入、溅射、化学气相沉积等综合性特点，可以在室温下合成亚稳态相和其他化合物材料。在此基础上，系统地进行了脉冲等离子体薄膜制备和材料表面改性及其机理的研究，在室温下的不同材料衬底上成功的沉积了性能良好的较大颗粒立方氮化硼、碳氮化钛、氮化钛、类金刚石、氮化铝等薄膜材料，沉积薄膜和基底之间存在一个很宽的过渡层，因此导致薄膜与基底有很强的粘结力，经脉冲等离子体处理过的金属材料表面性能得到了极大改善。     

托卡马克KT—5B上有关等离子体温度和密度的几项诊断

等离子体温度和密度的诊断是聚变研究不可缺少的重要方面。本文概要叙述KT-5B托卡马克实验中与等离子体温度和密度有关的几项诊断,说明其特点,对已获得的结果作了初步分析。