Electric-field control of ferromagnetism in GaSb/Mn digital alloys

We have investigated the dependence of ferromagnetism in GaSb/Mn digital alloys on applied electric bias perpendicular to the digital layers. The remanent Hall resistance determined from hysteresis loops in R_Hall vs. magnetic field was used as a measure of the ferromagnetism present in two samples at temperatures between 5 and 60 K. With applied gate bias, the remanent Hall resistance measured in gated Hall bars was found to change systematically with applied bias. The changes agree qualitatively with changes in carrier concentration determined from the sheet resistance vs. bias. Ferromagnetism in these samples can be turned on and off with applied bias near the Curie temperature (as high as 60 K in one sample).     

Ferromagnetic GaSb/Mn digital alloys

In order to realize spintronic devices in narrow-gap semiconductors, we have carried out studies on the well-known InAs/GaSb-based materials and structures. As a key component to such devices, GaSb/Mn digital alloys were successfully grown by molecular beam epitaxy. Good crystal quality was observed with transmission electron microscopy showing well-resolved Mn-containing layers and no evidence of 3D MnSb precipitates in as-grown samples. Ferromagnetism was observed in GaSb/Mn digital alloys with temperature-dependent hysteresis loops in magnetization up to 400 K (limited by the experimental setup). Magnetotransport studies were also carried out, both in the conventional Hall-bar configuration, and on gated Hall-bar structures. Both anomalous Hall effect and tunable ferromagnetism with applied gate bias were investigated. Annealing studies of the digital alloys reveal evidence of migration of Mn atoms at elevated temperatures.     

Anomalous photoluminescence of InAs quantum dots implanted by Mn ions

The photoluminescence (PL) of Mn-implanted quantum dot (QD) samples after rapid annealing is studied. It is found that the blue shift of the PL peak of the QDs, introduced by the rapid annealing, decreases abnormally as the implantation dose increases. This anomaly is probably related to the migration of Mn atoms to the InAs QDs during annealing, which leads to strain relaxation when Mn atoms enter InAs QDs or to the suppression of the inter-diffusion of In and Ga atoms when Mn atoms surround QDs. Both effects will suppress the blue shift of the QD PL peaks. The temperature dependence of the PL intensity of the heavily implanted QDs confirms the existence of defect traps around the QDs.     

Mn离子注入InAs/GaAs量子点结构材料的光电性质研究

用高能离子注入(160keV)的方法对InAs/GaAs量子点结构进行掺杂，研究了不同退火工艺处理后量子点的光致发光和电学性能.相对于长时间退火，快速退火处理后的量子点发光通常较强.在相同的退火条件下，量子点发光峰位随着Mn注入剂量的增加，先是往高能量端快速移动，而后发光峰又往低能方向移动.后者可能是由于Mn原子进入InAs量子点，释放了InAs量子点中的应变所致.对于高注入剂量样品和长时间退火样品，变温电阻曲线在40 K附近会出现反常行为. 关键词： 离子注入 InAs/GaAs量子点 光致发光 团簇     

Mini-gaps and novel giant negative magnetoresistance in InAs/GaSb semimetallic superlattices

We have studied the temperature dependence of the magnetoresistance of semimetallic InAs/GaSb structures with magnetic field applied parallel to the layers. We present the first unambiguous evidence for the presence of a mini-gap at the crossing point between the electron and hole dispersion relations. The resistivity is found to change from semiconductor-like behaviour with a strong temperature dependence at low parallel magnetic fields to that of a semimetal with a weak temperature dependence at high field. Furthermore, the magnetoresistance, for intrinsic samples, is found to decrease with field by as much as 70% at low temperatures. As the parallel magnetic field is increased the centres of the electron and hole dispersions are shifted apart in k-space and at sufficiently high field the mini-gap is destroyed and the bands overlap fully. Finally, a theoretical model allows us to estimate that the mini-gap is of order 7 meV.     

Magnetic properties of ball-milled Fe–Mn alloys

BCC, FCC and HCP phases in Fe–13.7 wt% Mn alloys were studied by Mössbauer spectroscopy and X-ray diffraction, after ball milling. The relative amounts of the HCP and FCC phases increase with milling times up to 9 h and decline afterwards. Preliminary AC susceptibility measurements show that the blocking temperatures change for different milling times.     

The first principle study of magnetic properties of Mn2WSn,Fe2YSn (Y=Ti,V), Co2YSn (Y=Ti,Zr, Hf,V, Mn) and Ni2YSn (Y=Ti,Zr, Hf,V, Mn) heusler alloys

The spin polarized electronic band structures, density of states (DOS) and magnetic properties of Mn₂WSn, Fe₂YSn (Y=Ti, V), Co₂YSn (Y=Ti, Zr, Hf, V, Mn) and Ni₂YSn (Y=Ti, Zr, Hf, V, Mn) huesler compounds are reported. The calculations are performed by using full-potential linearized augmented plane wave method (FP-LAPW) within density functional theory. The magnetic trend in these compounds is studied using values of magnetic moments, exchange interaction and calculated band gap. The results reveal that Mn₂WSn and Ni₂VSn show 100% spin polarization, Co₂YSn (Y=Ti, Zr, Hf, Mn), Fe₂YSn (Y=Ti, V), and Ni₂MnSn exhibit metallic nature and Ni₂YSn (Y=Ti, Zr, Hf) and Co₂VSn show semi-conducting behavior.     

InAs/GaAs柱形岛的制备及特性研究

利用固源分子束外延（MBE）的方法经SK模式自组装生长由多层InAs／GaAs量子点组成的柱形岛.具体分析了GaAs间隔层厚度，生长停顿时间以及InAs淀积量对发光峰波长的影响.原子力显微镜（AFM）结果显示柱形岛表面的形状和尺寸都比较均匀；室温下不同高度的柱形岛样品的发光波长分别达到1.32和1.4μm，而单层量子点的发光波长仅为1.1μm，充分说明了量子点高度对发光波长的决定性影响，这为调节量子点发光波长提供了一种直观且行之有效的方法. 关键词： 柱形岛 生长停顿 间隔层厚度 PL谱     

Effects of the Mn/Co ratio on the magnetic transition and magnetocaloric properties of Mn1+xCo1-xGe alloys

We have investigated the magnetic transition and magnetocaloric effects of Mn 1+x Co 1 x Ge alloys by tuning the ratio of Mn/Co.With increasing Mn content,a series of first-order magnetostructural transitions from ferromagnetic to paramagnetic states with large changes of magnetization are observed at room temperature.Further increasing the content of Mn (x=0.11) gives rise to a single second-order magnetic transition.Interestingly,large low-field magnetic entropy changes with almost zero magnetic hysteresis are observed in these alloys.The effects of Mn/Co ratio on magnetic transition and magnetocaloric effects are discussed in this paper.     

CoFe-based granular alloys: the role of the metallic matrix

RF-sputtered CoFe-NM granular alloys (NM=Ag, Cu) with CoFe volume content, x_v, ranging from 0.10 to 0.45 have been studied. These two series of samples show similar features depending on the synthesis conditions and post-deposition annealing treatments, revealing the strong dependence of magnetotransport properties on microstructure. Three different regimes have been observed as x_v is increased: the classical giant magnetoresistance (GMR) regime at low ferromagnetic contents; at intermediate x_v, a domain structure appears, and GMR and anisotropic magnetoresistance (AMR) together with domain wall scattering are observed; and a third regime at x_v close but below the volume percolation threshold, where the two latter contributions still coexist, while the GMR contribution has been suppressed by strong magnetic correlations. The role of the metallic matrix is crucial to determine the crossover ferromagnetic contents between these three regimes, which depend on the relative immiscibility of CoFe either in the Ag or Cu matrices and the diffusivity of Ag and Cu. Moreover, the metallic matrix settles the degree of CoFe segregation, sample crystallisation and texture, which are responsible for the magnetotransport properties.     

Intersubband transitions in InAs/GaSb semi-metallic superlattices

Magnetic field orientated parallel to the superlattice layers enables intersubband absorption to occur for normally incident light. We investigate semi-metallic InAs/GaSb superlattices in this configuration, presenting data over a wide range of InAs well widths. For narrow wells, the reduced absorption coefficient means that an alternative waveguide configuration, where the light makes about 4 or 5 passes through the sample is used. In this second configuration we see further activation of the intersubband resonance by the parallel field. The intersubband energy and absorption characteristics are studied over a large range of well widths and compared with results from 8-band k·p calculations.     

Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition

Photoluminescence （PL） and lasing properties of InAs/GaAs quantum dots （QDs） with different growth procedures prepared by metalorganic chemical vapour deposition are studied. PL measurements show that the low growth rate QD sample has a larger PL intensity and a narrower PL line width than the high growth rate sample. During rapid thermal annealing, however, the low growth rate sample shows a greater blueshift of PL peak wavelength. This is caused by the larger InAs layer thickness which results from the larger 2-3 dimensional transition critical layer thickness for the QDs in the low-growth-rate sample. A growth technique including growth interruption and in-situ annealing, named indium flush method, is used during the growth of GaAs cap layer, which can flatten the GaAs surface effectively. Though the method results in a blueshift of PL peak wavelength and a broadening of PL line width, it is essential for the fabrication of room temperature working QD lasers.     

Structural and magnetic investigations in the vicinity of first-order transformations in Ni–Mn–Ga–Co ferromagnetic shape memory alloys

Among the series of alloys derived from Ni₅₀Mn₂₉Ga₂₁ on selective substitution of Co for Ni and Mn, two alloys Ni_49.8Mn_27.2Ga_21.2Co_1.8 and Ni_46.9Mn_28.8Ga₂₁Co_3.3 referred to as CoMn-1.8 and CoNi-3.3, respectively, are found to exhibit an additional first-order transformation below their martensitic transformation temperatures. Systematic studies on temperature and field dependence of magnetic properties of these alloys are carried out, through the transformations, to understand their origin. An examination of these results in conjunction with those from structural investigations reveals that the transformation in the CoMn-1.8 alloy is an intermartensitic transformation and has a structural origin, while that in the CoNi-3.3 alloy is not of the structural origin and is attributed to local spin inversion of Co moments, which is of the magnetic origin.     

InAs/GaInSb超晶格薄膜结构与电学性能

采用分子束外延(MBE)方法, 调节生长温度、Ⅴ/Ⅲ束流比等参数在(001)GaAs衬底上生长了InAs/GaInSb超晶格薄膜.结果表明:InAs/GaInSb超晶格薄膜的最佳生长温度在385~395 ℃, Ⅴ/Ⅲ束流比为5.7 :1~8.7 :1.高能电子衍射仪(RHEED)原位观测到清晰的GaAs层(4×2)、GaSb层(1×3)和InAs层(1×2)再构衍射条纹.获得的超晶格薄膜结构质量较好.随着温度的升高, 材料的载流子浓度和迁移率均上升.     

Mn/GaAs(001)的表面再构与Mn的磁矩研究

通过第一性原理计算，系统地研究了Mn/GaAs(001)表面的各种再构和相应的局域电子态密度分布，以及表面上Mn的磁矩与各种再构间的对应关系.结果发现，Mn的行为类似电荷施主，将向GaAs表面提供电子，数量依表面的需求而定；直接与Mn的磁矩相联系的d轨道，既可以向GaAs表面施予电子，以弥补Mn的s电子的不足，又可以吸纳因GaAs表面饱和而富余的s电子.这些概念可有效地简化对金属引起的半导体表面再构的理论描述. 关键词： 表面再构 Mn/GaAs(001) 第一性原理计算     

Effect of compensation doping on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattice photodetectors

This paper presents a theoretical study on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattices with different beryllium concentrations in the InAs layer of the active region. Dark current, resistance-area product, absorption coefficient and quantum efficiency characteristics are thoroughly examined. The superlattice is residually n-type and it becomes slightly p-type by varying beryllium-doping concentrations, which improves its electrical performances. The optical performances remain almost unaffected with relatively low p-doping levels and begin to deteriorate with increasing p-doping density. To make a compromise between the electrical and optical performances, the photodetector with a doping concentration of 3 × 1015 cm-3 in the active region is believed to have the best overall performances.     

Interband transitions and electronic properties of InAs/GaAs quantum dots embedded in AlxGa1−xAs/GaAs modulation-doped heterostructures

Reflection high-energy electron diffraction, atomic force microscopy, transmission electron microscopy, and double-crystal X-ray curves showed that high-quality InAs quantum dot (QD) arrays inserted into GaAs barriers were embedded in an Al_0.3Ga_0.7As/GaAs heterostructure. The temperature-dependent photoluminescence (PL) spectra of the InAs/GaAs QDs showed that the exciton peak corresponding interband transition from the ground electronic subband to the ground heavy-hole subband (E₁-HH₁) was dominantly observed and that the peak position and the full width at half maximum corresponding to the interband transitions of the PL spectrum were dependent on the temperature. The activation energy of the electrons confined in the InAs/GaAs QDs was 115 meV. The electronic subband energy and the energy wave function of the Al_0.3Ga_0.7As/GaAs heterostructures were calculated by using a self-consistent method. The electronic subband energies in the InAs/GaAs QDs were calculated by using a three-dimensional spatial plane wave method, and the value of the calculated (E₁-HH₁) transition in the InAs/GaAs QDs was in reasonable agreement with that obtained from the PL measurement.     

Investigation of populated InAs/GaAs quantum dots by photoluminescence and photoreflectance

We studied self-assembled InAs/GaAs quantum dots by contrasting photoluminescence and photoreflectance spectra from 10 K to room temperature. The photoluminescence spectral profiles comprise contributions from four equally separated energy levels of InAs quantum dots. The emission profiles involving ground state and excited states have different temperature evolution. Abnormal spectral narrowing occurred above 200 K. In the photoreflectance spectra, major features corresponding to the InAs wetting layer and GaAs layers were observed. Temperature dependences of spectral intensities of these spectral features indicate that they originate from different photon-induced modulation mechanisms. Considering interband transitions of quantum dots were observed in photoluminescence spectra and those of wetting layer were observed in photoreflectance profiles, we propose that quantum dot states of the system are occupied up to the fourth energy level which is below the wetting layer quantum state.     

Investigation of the effect of varying growth pauses on the structural and optical properties of InAs/GaAs quantum dot heterostructures

Effect of growth pause or ripening time on structural and optical properties of self-assembled InAs/GaAs quantum dot (QD) heterostructures grown by solid state molecular beam epitaxy (MBE ) technique with two different growth rates of InAs (0.032 MLs⁻¹ and 0.197 MLs⁻¹) has been investigated. The QD heterostructures were grown at 520 ^°C with InAs monolayer coverage of 2.7 ML. The results were explained on the basis of high angle annular dark field scanning transmission electron microscope (HAADF-STEM), scanning electron microscope (SEM) and photoluminescence (PL) measurements. Introduction of growth pause leads the QD system towards a thermodynamic equilibrium state which in turn makes interesting changes on the morphology of the samples. Coagulation of some smaller dots occurs because of ripening to produce evolved QDs and the dot density reduces with growth pause.     

Influence of the low Mn intercalation on magnetic and electronic properties of 2H-TaS2 single crystals

The low-Mn-intercalated compounds 2H-Mn_xTaS₂ (x≤0.1) single crystals were successfully grown via the iodine chemical vapor transport technique; the electrical and magnetic properties have been investigated systematically. No signs of charge density wave and superconductivity transitions appear down to 2 K even when x=0.02, while a small resistivity upturn has been observed in the low-temperature region for Mn_xTaS₂ samples. A substantial magnetocrystalline anisotropy is observed and the Mn magnetic moments lie mainly parallel to the ab-plane. The glass behavior was observed in the low-temperature region firstly from the ac susceptibility measurement, the freezing of the glass may contribute to the upturn of the resistivity.