Investigation of charge carrier mobility in 5,6,11,12-tetraphenylnapthacene (rubrene) and coumarin 6 doped Alq3 films

The doping effect on charge carrier mobility in tris (8-hydroxyquinolinato) aluminum (Alq₃) was studied by time-of-flight (TOF) measurements. The polar dopant, coumarin 6 (C-6) and extensive π conjugated dopant, 5,6,11,12-tetraphenylnaphthacene (rubrene) were used for this study. The co-doped of rubrene (Rb) with C-6 into Alq₃ improved the carrier mobility compared to the single doped Alq₃:C-6 film. The carrier mobility in single doped Alq₃:C-6 film did not follow the linear relationship of Poole-Frenkel (PF) model with applied electric field. The mobility was in agreement with the PF model at two different ranges of electric fields (F) separated by a critical field . The mobility in co-doped Alq₃:(Rb:C-6) film followed the linear relationship with the PF model. The energetic disorder was found as ∼0.32 eV in co-doped films. It was ∼0.55 and ∼0.27 eV before and after the critical field in Alq₃:C-6 film. The values of positional disorders in co-doped films were estimated as ∼1.8 and it was ∼2 in Alq₃:C-6 film at . The organic light emitting diode performance of the co-doped film was improved compared to single doped film. The luminescence efficiency was improved tremendously to ∼6  Cd/A in co-doped device at 45 mA/cm² current compared to Alq₃:C-6 film device of ∼1  Cd/A.     

Alq3和CdSeS量子点掺杂体系的载流子输运性质的研究

利用飞行时间法(time-of-flight)测定了有机小分子发光材料8-羟基喹啉铝(Alq₃)与CdSeS量子点掺杂体系的载流子迁移率.研究了Alq₃和CdSeS混合薄膜的载流子迁移率与外加电场强度和量子点浓度的变化关系.研究结果表明,CdSeS量子点的掺杂浓度的增加会引起薄膜样品位置无序的增加.除此之外,Alq₃和CdSeS量子点界面之间的电荷转移作用,以及在量子点之间进行跳跃传输的电子数量都会改变样品的载流子迁移率. 关键词： 3')" href="#">Alq₃ CdSeS量子点 飞行时间法     

Photorefractive properties of highly-doped lithium niobate crystals in the visible and near-infrared

Light-induced refractive-index changes, bulk-photovoltaic current densities, and photoconductivities of photorefractive iron-doped lithium niobate crystals (iron concentrations between 0.02 and 0.17 wt. %) are investigated in detail using visible and near-infrared light. It turns out that the one-center model predicts the material performance correctly for small iron concentrations (c_Fe<0.06 wt. % Fe₂O₃), only. A strong increase of the photoconductivity for higher doping levels limits the space-charge fields. Refractive-index changes up to 7×10^-4 for green and 2.8×10^-4 for near-infrared ordinarily polarized light are obtained. The corresponding hologram multiplexing numbers are 11 for green and 5 for near-infrared light. Received: 18 November 1998 / Revised version: 8 January 1999 / Published online: 7 April 1999     

Structural, optical and electrical properties of molybdenum-doped cadmium oxide thin films prepared by spray pyrolysis method

Molybdenum-doped cadmium oxide films were prepared by a spray pyrolysis technique at a substrate temperature of 300?°C. The effect of doping on structural, electrical and optical properties were studied. X-ray analysis shows that the undoped CdO films are preferentially oriented along the (111) crystallographic direction. Molybdenum doping concentration increases the films?? packing density and reorients the crystallites along the (200) plane. A?minimum resistivity of 4.68×10^?4????cm with a maximum mobility of 75?cm²?V^?1?s^?1 is achieved when the CdO film is doped with 0.5?wt.% Mo. The band-gap value is found to increase with doping and reaches a maximum of 2.56?eV for 0.75?wt.% as compared to undoped films of 2.2?eV.     

Transparent conducting antimony-doped tin oxide films deposited on flexible substrates by r.f. magnetron-sputtering

Transparent conducting antimony-doped tin oxide (SnO₂:Sb) films were deposited on organic substrates by r.f. magnetron-sputtering. Polycrystalline films with a resistivity of ≈ 6.5×10^-3 Ω cm, a carrier concentration of≈ 1.2×10²⁰ cm^-3 and a Hall mobility of ≈ 9.7 cm² v^-1 s^-1 were obtained. The average transmittance of these films reached 85% in the wavelength range of the visible spectrum. Received: 20 April 2001 / Accepted: 23 July 2001 / Published online: 17 October 2001     

Emission properties of dopants rubrene and coumarin 6 in Alq3 films

We have investigated the emission properties of dopants 5,6,11,12-tetraphenylnapthacene (rubrene) and 3-(2′-benzothiazolyl)-7-diethylaminocoumarin (coumarin 6) as well as co-doping of these two dopants in tris (8-hydroxyquinolinato) aluminum (Alq₃) films in double-layer organic light emitting diodes (OLEDs). We varied the rubrene (Rb) doping concentration in Alq₃:Rb films up to 10 wt%. The maximum luminescence efficiency of ∼6.5 cd/A was observed for Rb doping concentration of ∼0.7 wt% in Alq₃:Rb film, which was nearly double efficiency compared to pure Alq₃ device. The co-doping of dopants of C-6 and Rb in the ratio of 1:1 and 1:2 in Alq₃ films reduced the bias voltage compared to pure Alq₃ and Alq₃:C-6 devices for the same current density. The maximum luminescence efficiency was improved to ∼7 cd/A in Alq₃:{C-6:Rb(1:2)} film OLED. The direct recombination of holes and electrons in the dopant molecules may be responsible for the improvement of the luminescence efficiency. We also observed the shifting of photoluminescence (PL) and electroluminescence (EL) peaks position from ∼515 to ∼562 nm by co-doping of Rb and C-6 in Alq₃.     

电子辐照硅层中缺陷能级的研究

用12MeV电子辐照硅p⁺n结,在硅中除引入氧空位E₁(E_c-0.19eV),双空位E₂(E_c-0.24eV)和E₄(E_c-0.44eV)外,还引入缺陷E₃(E_c-0.37eV)。用DLTS方法和反向恢复时间测量研究了这些能级的退火行为,可以看到,E₃的退火温度最高(≈520℃)。由退火特 关键词：     

Studies on influence of light on fluorescence of Tris-(8-hydroxyquinoline)aluminum thin films

Tris-(8-hydroxyquinoline)aluminum (Alq₃) thin films, the most widely used electron transport/emissive material in the organic electroluminescent (EL) devices, have been deposited on glass substrates by thermal evaporation process. Alq₃ thin films were exposed to light for various time periods under normal ambient. The fluorescence of as-prepared and light exposed Alq₃ thin films and formation of luminescent quencher have been studied using fluorescence, Mass, MALDI-ToF-MS, ¹H & ¹³C NMR, and FT-IR spectroscopy. It is observed that among the three 8-hydroxyquinoline (HQ) units in Alq₃ molecule, one HQ unit is affected during the light exposure in the normal ambient. It is found that the affected resultant Alq₃ molecule containing the carbonyl group acts as fluorescent quencher and the energy of excitons in the Alq₃ molecule in the light exposed Alq₃ thin films can be non-radiatively transferred to the neighboring fluorescent quencher, quenching the fluorescence of light exposed Alq₃ thin films in the normal ambient.     

Production and characterization of Nd,Cr:GSGG thin films on Si(001) grown by pulsed laser ablation

Nd,Cr:Gd₃Sc₂Ga₃O₁₂ (GSGG) thin films have been produced for the first time. They were grown on Si(001) substrates at 650 °C by pulsed laser ablation at 248 nm of a crystalline Nd,Cr:GSGG target rod. The laser plume was analyzed using time-of-flight quadrupole mass spectroscopy, and consisted of elemental and metal oxide fragments with kinetic energies typically in the range 10 to 40 eV, though extending up to 100 eV. Although films deposited in vacuum using laser fluences of 0.8±0.1 J cm⁻² reproduced the Nd,Cr:GSGG bulk stoichiometry, those deposited using fluences above ≈3 J cm⁻² resulted in noncongruent material transfer and were deficient in Ga and Cr. Attempts to grow films using synchronized oxygen or oxygen/argon pulses yielded mixed oxide phases. Under optimal growth conditions, the films were heteroepitaxial, with GSGG(001)[100]∥Si(001)[100], and exhibited Volmer–Weber-type growth. Room-temperature emission spectra of the films suggest efficient non-radiative energy transfer between Cr³⁺ and Nd³⁺ ions, similar to that of the bulk crystal. Received: 1 October 1999 / Accepted: 15 October 1999 / Published online: 23 February 2000     

利用空间电荷限制电流方法确定三(8-羟基喹啉)铝的电子迁移率特性初步研究

材料的迁移率是其关键电学特性之一.有机材料迁移率的研究对于有机电致发光器件、 有机太阳电池、有机薄膜场效应晶体管性能的提高有重要的意义. 应用简单易行的空间电荷限制电流方法,对基于三(8-羟基喹啉)铝(Alq₃) 的四种单载流子器件电流密度-电压曲线特性进行研究, 根据空间电荷限制电流模型,拟合出Alq₃材料在四种器件中的零场电子迁移率和电场依赖因子,并且给出Alq₃电子迁移率随外加偏压的变化趋势. 实验结果表明,顶电极铝蒸镀到缓冲层氟化锂(1 nm)和Alq₃ (100 nm)的表面后, 可以明显改善Alq₃的零场迁移率和电场依赖因子. 认为产生这种现象的原因是氟化锂可以使铝和Alq₃发生络合反应, 形成Li⁺¹Alq^-1粒子,形成良好的欧姆接触,使得电子的注入效率大大提高.     

热丝化学气相沉积技术低温制备多晶硅薄膜的结构与光电特性

以金属W和Ta为热丝，采用热丝化学气相沉积 ，在250℃玻璃衬底上沉积多晶硅薄膜.研究了热丝温度、沉积气压、热丝与衬底间距等沉积参数对硅薄膜结构和光电特性的影响，在优化条件下获得晶态比X_c＞90%，暗电导率σ_d=10^-7—10-6Ω ^-1cm^-1，激活能E_a=0.5eV，光能隙E_opt≤1.3 eV的多晶硅薄膜. 关键词： 多晶硅薄膜 热丝化学气相沉积 光电特性     

Bond cutting in Cs‐doped tris(8‐hydroxyquinoline) aluminium

A series of Cs 4d and Al 2p spectra associated with valence‐band and cut‐off spectra have been used to characterize the interaction between caesium and tris(8‐hydroxyquinoline) aluminium (Alq₃) molecules in a Cs‐doped Alq₃ layer. The Cs 4d and Al 2p spectra were tuned to be very surface sensitive by selecting a photon energy of 120 eV at the National Synchrotron Radiation Research Center, Taiwan. A critical Cs concentration exists, above which a new Al 2p signal appears next to the Al 2p peak of Alq₃ in the lower binding‐energy side. The Al 2p signal was analyzed and assigned as being contributed from a mixture of Alq₂, Alq and Al. Experimental data supported the observation that bond cutting of Alq₃ by the doped Cs atoms occurred at high Cs doping concentration.     

SnO2 thin films grown by pulsed Nd:YAG laser deposition

SnO₂ thin films have been deposited on glass substrates by pulsed Nd:YAG laser at different oxygen pressures, and the effects of oxygen pressure on the physical properties of SnO₂ films have been investigated. The films were deposited at substrate temperature of 500°C in oxygen partial pressure between 5.0 and 125 mTorr. The thin films deposited between 5.0 to 50 mTorr showed evidence of diffraction peaks, but increasing the oxygen pressure up to 100 mTorr, three diffraction peaks (110), (101) and (211) were observed containing the SnO₂ tetragonal structure. The electrical resistivity was very sensitive to the oxygen pressure. At 100 mTorr the films showed electrical resistivity of 4×10⁻² Ω cm, free carrier density of 1.03×10¹⁹ cm⁻³, mobility of 10.26 cm² V⁻¹ s⁻¹ with average visible transmittance of ∼87%, and optical band gap of 3.6 eV.     

Transition metal impurities in silicon: New defect reactions

Recent investigations on transition-metal impurities in silicon emphasizing the effect of the combined diffusion of two transition metals are presented and briefly discussed. The electronic properties and basic thermal kinetics are analysed by DLTS. The conversion of a Pd-related multivalent defect atE _c-0.35 eV andE _c-0.57 eV to the Pd-related defect atE _c –0.22 eV is observed, and a Pd-Fe complex level atE _c –0.32 eV is identified. The annealing characteristics of the multivalent Rh levels atE _c-0.33 eV andE _c-0.57 eV are observed, and used to analyse the influence of prior Rh doping on the Au diffusion. A complex formed by the codiffusion of Au and Cu is observed atE _v+0.32eV andE _v+0.42 eV, and shown to exhibit bistable behavior as does a similarly produced Au-Ni complex observed atE _v + 0.35 eV andE _v+0.48 eV.     

富勒烯掺杂NPB空穴传输层的有机电致发光器件

报道了不同掺杂浓度NPB：C₆₀（富勒烯）作为空穴传输层对有机电致发光器件性能的影响.采用真空热蒸镀方法,制作了ITO/ NPB：C₆₀ （x % ）/Alq₃/LiF/Mg:Ag结构的四种有机电致发光器件.当NPB：C₆₀的掺杂浓度是15％时,器件的启亮电压是4 V,最大亮度是11000 cd/m².然而,当NPB：C₆₀的掺杂浓度是20％时,器件的最大亮度降     

Preparation and characterization of Al doped ZnO thin films by PLD

This paper describes the effect of doping on the composition, surface morphology and optical, structural and electrical properties of Al doped ZnO thin films by pulsed laser deposition. SEM analysis shows that the crystalline nature of the deposited films decreases with an increase of Al doping concentration from 1% to 6%. In the AFM analysis, the surface roughness of the deposited films increases by increasing the doping concentration of Al. Al doping strongly influences the optical properties of the ZnO thin films. Optical transmittance spectra show a very good transmittance in the visible region (450–700 nm). The calculated optical band gap was found to be in the range from 3.405 to 3.464 eV. Structural analysis confirms that the increases of Al concentration decrease the crystallinity of the ZnO films and the particle size decreases from 45.7±0.09 to 28.0±0.02 nm. In the Raman analysis, the active mode of Al(=1%) doped ZnO films were observed at 434.81 cm⁻¹. The shifts of the active mode (_E2)$\left(E_2\right)$ show the presence of tensile stress in the deposited films. The electrical properties of the deposited films showed that the values of the Hall mobility was in the range between 2.51 and 10.64 cm²/V s and the carrier concentration between 15.7 and 0.78×10¹⁷ and the resistivity values between 1.59 and 10.97 Ωcm, depending on the doping concentration.     

Influence of small-molecule material on performance of polymer solar cells based on MEH-PPV:PCBM blend

In this work,the influence of a small-molecule material,tris(8-hydroxyquinoline) aluminum (Alq 3),on bulk het-erojunction (BHJ) polymer solar cells (PSCs) is investigated in devices based on the blend of poly(2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV) and [6,6]-phenyl-C 61-butyric acid methyl ester (PCBM).By dop-ing Alq 3 into MEH-PPV:PCBM solution,the number of MEH-PPV excitons can be effectively increased due to the energy transfer from Alq 3 to MEH-PPV,which probably induces the increase of photocurrent generated by excitons dissociation.However,the low carrier mobility of Alq 3 is detrimental to the efficient charge transport,thereby blocking the charge collection by the respective electrodes.The balance between photon absorption and charge transport in the active layer plays a key role in the performance of PSCs.For the case of 5 wt.% Alq 3 doping,the device performance is deteriorated rather than improved as compared with that of the undoped device.On the other hand,we adopt Alq 3 as a buffer layer instead of commonly used LiF.All the photovoltaic parameters are improved,yielding an 80% increase in power conversion efficiency (PCE) at the optimum thickness (1 nm) as compared with that of the device without any buffer layer.Even for the 5 wt.% Alq 3 doped device,the PCE has a slight enhancement compared with that of the standard device after modification with 1 nm (or 2 nm) thermally evaporated Alq 3.The performance deterioration of Alq 3-doped devices can be explained by the low solubility of Alq 3,which probably deteriorates the bicontinuous D-A network morphology;while the performance improvement of the devices with Alq 3 as a buffer layer is attributed to the increased light harvesting,as well as blocking the hole leakage from MEH-PPV to the aluminum (Al) electrode due to the lower highest occupied molecular orbital (HOMO) level of Alq 3 compared with that of MEH-PPV.     

N-doping of pentacene by decamethylcobaltocene

We demonstrate n-type doping of pentacene with the powerful reducing molecule decamethylcobaltocene (CoCp₂^*). Characterization of pentacene films deposited in a background pressure of CoCp₂^* by X-ray photoemission spectroscopy and Rutherford backscattering confirm that the concentration of incorporated donor molecules can be controlled to a level as high as 1%. Ultraviolet photoemission spectroscopy show Fermi level (E _F) shifts toward unoccupied pentacene states, indicative of an increase in the electron concentration. A 1% donor incorporation level brings E _F to 0.6 eV below the pentacene lowest unoccupied molecular orbital. The corresponding electron density of ∼10¹⁸ cm⁻³ is confirmed by capacitance–voltage measurements on a metal–pentacene–oxide–silicon structure. The demonstration of n-doping suggests applications of CoCp₂^* to pentacene contacts or channel regions of pentacene OTFTs.     

A comparative study of lithium and sodium salts in PAN-based ion conducting polymer electrolytes

The conducting polymer electrolyte films consisting of polyacrylonitrile (PAN) as the host polymer, lithium triflate (LiCF₃SO₃) and sodium triflate (NaCF₃SO₃) as inorganic salts were prepared by the solution-cast technique. The pure PAN film was prepared as a reference. The ionic conductivity for the films is characterized using impedance spectroscopy. The room temperature conductivity for the PAN + 26 wt.% LiCF₃SO₃ film and the PAN + 24 wt.% NaCF₃SO₃ film is 3.04 × 10⁻⁴ S cm⁻¹ and 7.13 × 10⁻⁴ S cm⁻¹, respectively. XRD studies show that the complexation that has occurred in the PAN containing salt films and complexes formed are amorphous. The FTIR spectra results confirmed the complexation has taken place between the salt and the polymer. These results correspond with surface morphology images obtained from SEM analysis. The conductivity–temperature dependence of the highest conducting film from PAN + LiCF₃SO₃ and PAN + NaCF₃SO₃ systems follows Arrhenius equation in the temperature range of 303 to 353 K. The PAN containing 24 wt.% LiCF₃SO₃ film has a higher ionic conductivity and lower activation energy compared to the PAN containing 26 wt.%LiCF₃SO₃ film. These results can be explained based on the Lewis acidity of the alkali ions, i.e., the interaction between Li⁺ ion and the nitrogen atom of PAN is stronger than that of Na⁺ ion.     

Trap-centers of self-interstitials in silicon

Deep-level profiles were measured radially acrossn-type FZ silicon wafers containing A-swirl defects by applying DLTS to an array of Schottky contacts. The trapparameters were obtained very accurately using a computer-fit procedure for the full DLTS peaks. Two acceptor levels atE _c −0.49 eV (σ _n =6.6×10⁻¹⁶cm²) andE _c −0.07 eV (σ _n =4.6×10⁻¹⁶cm²) were observed, which varied oppositely to the A-swirl defect density. At short ranges (1–2mm) the trap concentration-profile was smeared out and did not follow the strong fluctuations in the etch pattern. Both levels were measured together with the same concentration. The profiles indicate outdiffusion. A level atE _c −0.14 eV (σ _n =1.1×10⁻¹⁶cm²) was not related to A-swirl defects. A level atE _c −0.11 eV (σ _n =1.1×10⁻¹⁵cm²) was only detected in one ingot. The properties of the deep level atE _c −0.49 eV are discussed in the light of published DLTS results reported for γ-irradiation, laser annealing after self-implantation, annealing under pressure and oxidation of silicon samples. It is concluded, that this level is related to interstitial silicon rather than to an impurity.