A proposed ultra low-noise optical receiver for 1.55 μm applications

A high-sensitivity optical receiver based on InP/InGaAs superlattice avalanche photodiode (SL-APD) followed by an InGaAs MESFET transimpedance pre-amplifier has been proposed for operation in 1.55 m wavelength region. The proposed optical receiver may be realised in the hybrid integrated circuit form. The low excess-noise factor of the SL-APD significantly reduces the value of minimum detectable optical power and improves the sensitivity of the over all receiver. The proposed receiver has been analysed theoretically. The results of computation show that the device has a high transimpedance gain (60 dB-ohm) with a bandwidth of 11 GHz for a photodetector capacitance of 110 fF. The sensitivity of the receiver has been found to be (–27.3d Bm) at operating bit rate of 15 Gb/s for a bit-error-rate of 10^–9. The performance of the receiver can be optimised in respect of transimpedance gain, bandwidth and sensitivity by following guidelines provided in this paper. The proposed photoreceiver outperforms the existing receivers based on p-i-n/FET or conventional APD/FET photoreceivers.     

Opto-electronic integrated circuits using the InGaAsP/InP system

Recent developments in opto-electronic integrated circuits (OEICs) using the InGaAsP/InP system which is monolithically integrated with opto-electronic and electronic devices are discussed. The technological problems for the development of the OEICs are explained by reviewing recent developments in OEICs.     

Metamorphic In0.53Ga0.47As p-I-n photodetector grown on GaAs substrates by low-pressure MOCVD

Top-illuminated metamorphic In0.53Ga0.47As p-i-n photodetectors are grown on the ultrathin lowtemperature InP buffered GaAs substrates. Photodetectors with the 300-nm-thick In0.53Ga0.47As absorption layer show a typical responsivity of 0.12 A/W to 1.55-μm optical radiation, corresponding to an external quantum efficiency of 9.6%. Photodetectors with the active area of 50 × 50 (μm) exhibit the -3 dB bandwidth up to 6 GHz. These results are very encouraging for the application of this metamorphic technology to opto-electronic integrated circuit (OEIC) devices.     

Interchip link system using an optical wiring method

A chip-scale optical link system is presented with a transmitter/receiver and optical wire link. The interchip link system consists of a metal optical bench, a printed circuit board module, a driver/receiver integrated circuit, a vertical cavity surface-emitting laser/photodiode array, and an optical wire link composed of plastic optical fibers (POFs). We have developed a downsized POF and an optical wiring method that allows on-site installation with a simple annealing as optical wiring technologies for achieving high-density optical interchip interconnection within such devices. Successful data transfer measurements are presented.     

Analysis of optical crosstalk within optoelectronic integrated circuits including lasers and photodetectors

Optical crosstalk from a 1.3 μm laser to a 1.55 μm photodiode on a single InP substrate, and its suppression within 1.3 μm/1.5 μm Y-junction transceiver OEICs, has been analyzed experimentally. The results indicate that the optical crosstalk suppression is limited by the accumulated light in the OEIC substrate coming mainly from the spontaneous emission of the integrated laser and from stray light at the laser–waveguide butt joint interface. For OEICs, integrating lasers and photodetectors, the achievable optical intra-chip crosstalk at present will be in the range of 30–40 dB at the required small die dimensions. Received: 16 May 2001 / / Published online: 23 October 2001     

Ultra-wide-band long-wavelength photodetectors

Developments and performances of ultra-wide-band long-wavelength photodetectors are outlined. Theoretical consideration shows the competence of the waveguide p-i-n photodetector for ultra-wide-band long-wavelength optical fibre communication. A newly proposed multimode waveguide p-i-n photodetector with mushroom-mesa structure can relax the parasitic limits, and reaches a record performance of 110 GHz bandwidth and 50% external quantum efficiency at a 1.55 m wavelength. A high-speed monolithically integrated photoreceiver using the waveguide p-i-n photodetector is also presented.     

An interconnect width and spacing optimization model considering scattering effect

As the feature size of the CMOS integrated circuit continues to shrink, the more and more serious scattering effect has a serious impact on interconnection performance, such as delay and bandwidth. Based on the impact of the scattering effect on latency and bandwidth, this paper first presents the quality-factor model which optimises latency and bandwidth effectively with the consideration of the scattering effect. Then we obtain the analytical model of line width and spacing with application of curve-fitting method. The proposed model has been verified and compared based on the nano-scale CMOS technology. This optimisation model algorithm is simple and can be applied to the interconnection system optimal design of nano-scale integrated circuits.     

光致聚合物全混洗光互连全息元件的制备

采用只对红光敏感的光致聚合物全息干版通过 Ｈｅ－Ｎｅ ６３２ｎｍ激光波长两次掩膜曝光,在面积为３０ｍｍ × ６０ｍｍ的全息干版上制备出全息光学元件,并成功地用于全混洗光学互连的实验演示。全息光学元件的衍射效率为 ４０～ ５２％。     

Two-dimensional optoelectronic devices for future optical switching and information processing

Recent progress is reviewed in surface-normal optoelectronic devices primarily for use in optical switching and information processing. A type of optoelectronic integrated circuit (OEIC), the surface-normal two-dimensional array, is fabricated using these devices. This improves on first-generation OEICs by featuring large-scale integration in a small area, which results in a higher production yield. It also has structures which can easily be integrated with electronic circuits and can meet multichannel requirements. This approach supports optoelectronic progress towards optical information processing.     

Reconfigurable mesh-based inter-chip optical interconnection network for distributed-memory multiprocessor system

A 4×4 reconfigurable mesh-based inter-chip optical interconnection network is reported for distributed-memory multiprocessor system and the experiment confirmed that the data rate in each channel could reach above 3.125 Gbps, which would be a good solution to solve the communication bottlenecks between processors. Each node of this reconfigurable mesh could realize 15 internal connection patterns to complete the interconnections of processors. Besides, this mesh interconnect network via ultra-high bandwidth waveguides embedded in EOPCB can realize flexible multiprocessor system architecture options.     

150 Mbits−1 ch−1 12-channel optical parallel interface using an LED and a PD array

An optical fibre parallel interface has been developed for card-cage to card-cage and board-to-board interconnections, representing a practical and promising optical interconnection. For a system design of a 12 channel, 150 Mbits^–1 ch^–1 optical parallel interface over a distance of 100 m, it is shown that the choice of a long wavelength LED/PD array with graded index optical fibre array meets the requirements for both power budget and skew limitation over this transmission distance. A 7 mm thick compact package transmitter and receiver module was developed, employing a Zn-doped, mesa structure, 1.3m LED array and an isolated InGaAs PD array. An optical parallel transmission experiment over 100 m was successfully demonstrated using these modules.     

Research on optical multistage butterfly interconnection and optoelectronic logic operations

We briefly study butterfly interconnection construction and propose an experimental approach to implementing multistage butterfly interconnection networks by using a special interconnection grating with the reflection ladder structure and liquid crystal light valves (LCLVs), and implementing the optical butterfly interconnections and primary optical digital logic operations. With this foundation, we analyse and discuss the features of the approach by computer simulations. In terms of our theoretical analyses, we improve the ring-circuit approach, based on the reflection ladder structure gratings, into a more suitable form based on transmission gratings, and we substitute the LCLVs with optoelectronic switches. Finally we give the experimental results of both the transmission grating and optoelectronic switches.     

Coupled Mach-Zehnder interferometer memory element

Two active Mach-Zehnder interferometers are integrated in a monolithic InP/InGaAsP photonic integrated circuit. Together they form a crucial component for optical signal processing: an optical memory element or set-reset flip-flop. The switching time for this initial device is approximately 200 ps. The photonic integrated circuit contains active and passive optical components, including electro-optic phase shifters.     

4×8 optoelectronic matrix switch equipment using InGaAsP/InP heterojunction switching photodiodes

A four input-port and an eight output-port optoelectronic matrix switch using InGaAsP/InP hetero-junction switching photodiodes was fabricated and its characteristics studied. The characteristics of the broadband switching equipment, as well as those of individual components, such as the switching photodiodes, InGaAsP/InP semiconductor lasers, eight-port optical dividers and receiver circuits, are discussed from the viewpoint of analogue signal switching. The signal-to-noise ratio attained is more than 40dB for a 30MHz bandwidth television signal. Differential gain and differential phase are less than 2% and 2°, respectively, isolation is higher than 80 dB. Crosstalk between adjacent channels is suppressed below-60 dB over the band between d.c. and 100 MHz by a simple metallic shield at the input and output electric circuits.     

Characteristic analysis of the optical delay in frequency response of resonant cavity enhanced (RCE) photodetectors

With consideration of the modulation frequency of the input lightwave itself, we present a new model to calculate the quantum efficiency of RCE p-i-n photodetectors (PD) by superimposition of multiple reflected lightwaves. For the first time, the optical delay, another important factor limiting the electrical bandwidth of RCE p-i-n PD excluding the transit time of the carriers and RC_d response of the photodetector, is analyzed and discussed in detail. The optical delay dominates the bandwidth of RCE p-i-n PD when its active layer is thinner than several 10~nm. These three limiting factors must be considered exactly for design of ultra-high-speed RCE p-i-n PD.     

Optimization of signal-to-noise ratio in integrated planar optical interconnects packages

The signal-to-noise ratio (SNR) of integrated planar optical (IPO) board-to-board interconnections system is analyzed. The SNR is derived as a function of separation between the boards, beam spot size, optical system efficiency, receiver thermal noise, thickness of the substrate, and the angle of propagation of the beam. Based on the analyses and the results obtained it is shown that the design of optical interconnects system can be optimized for maximum SNR using at least one parameter, namely, angle of propagation.     

Prototype Demonstration of Discrete Correlation Processor-2 Based on High-Speed Optical Image Steering for Large-Fan-Out Reconfigurable Optical Interconnections

We present a discrete correlation processor-2 (DCP-2), which is an optical processor with reconfigurability of interconnection patterns for large-fan-out optical interconnection systems. To our knowledge, there is no reconfigurable optical processor satisfying the requirements for large fan-outs such as high-speed reconfiguration of interconnection pattern, high optical efficiency, and high contrast ratio, because existing spatial light modulators (SLM#x0027;s) lack at least one of these features. The DCP-2 architecture fulfills the requirements by using a hybrid configuration composed of a high-speed image steerer and a spatial light modulator, which work in a complementary manner to shorten the setup time of the SLM. We constructed two kinds of prototype demonstrators based on this architecture. In the experiment, reconfiguration speed of the DCP-2 prototype with shift-invariant optical interconnections, in which a liquid crystal SLM cooperated with a two-dimensional acousto-optic beam deflector, was about 26,000 times faster than that of the standalone SLM at the cost of 50#x0025; energy loss by the deflector.     

A multilevel nano-scale interconnection RLC delay model

Based on the multilevel interconnections temperature distribution model and the RLC interconnection delay model of the integrate circuit,this paper proposes a multilevel nano-scale interconnection RLC delay model with the method of numerical analysis,the proposed analytical model has summed up the influence of the configuration of multilevel interconnections,the via heat transfer and self-heating effect on the interconnection delay,which is closer to the actual situation.Delay simulation results show that the proposed model has high precision within 5% errors for global interconnections based on the 65 nm CMOS interconnection and material parameter,which can be applied in nanometer CMOS system chip computer-aided design.     

光互连技术在信号处理中的某些应用

叙述了近年来在天津大学研究及开发光互连网络的情况。这些研究围绕着解决信号传输中的延迟和通信带宽,开展的研究工作有：完成包括64个处理器的光电混合处理器阵列系统;giga—bit／s机群系统光互连链路;在链路中采用时分复用技术(TDM),实现了“虚拟并行传输”;在链路中设计了硬件路由功能,并组成光环网;在网络系统中实现波长路由,并建立了波长路由双环网,采用该技术可以避免路由延迟;在光互连网络中应用了MEMS光开关,实现了星型一环形二级结构;用同步光传输技术实现了多通道数据传输卡。     

Size dependence of non-linear optical properties of SiO2 thin films containing InP nanocrystals

SiO₂ composite thin films containing InP nanocrystals were fabricated by radio-frequency magnetron co-sputtering technique. The microstructure of the composite thin films was characterized by X-ray diffraction and Raman spectrum. The optical absorption band edges exhibit marked blueshift with respect to bulk InP due to strong quantum confinement effect. Non-linear optical absorption and non-linear optical refraction were studied by a Z-scan technique using a single Gaussian beam of a He-Ne laser (632.8 nm). We observed the saturation absorption and two-photon absorption in the composite films. An enhanced third-order non-linear optical absorption coefficient and non-linear optical refractive index were achieved in the composite films. The nonlinear optical properties of the films display the dependence on InP nanocrystals size. Received: 27 June 2000 / Accepted: 27 June 2000 / Published online: 13 September 2000