New approach to capacitance spectroscopy for interface characterization of a-Si:H/c-Si heterojunctions

A new technique for characterization of interface defects in a-Si:H/c-Si heterostructure solar cells from capacitance spectroscopy measurements under illumination at forward bias close to open-circuit voltage is described. The proposed method allows to significantly increase the sensitivity to interface defects compared to conventional capacitance measurements at zero or small negative bias. Results of numerical modelling as well as experimental data obtained on n-type a-Si:H/p-type c-Si heterojunctions are presented. The sensitivity of the proposed method to interface states and the influence of various parameters like band mismatch, density of interface defects, recombination velocity at the back contact are discussed.     

Transient photoconductivity studies of band tails states in compensated a-Si:H

The density of conduction band tail states has been determined for a series of compensated a-Si:H films using transient photoconductivity measurements. Relative to undoped material, the energy width of shallow tail states lying within 0.45 eV of the conduction band edge are found to be insensitive to the level of compensated doping for doping levels up to 1000 vppm. An observed reduction in photocurrent magnitude as the doping is increased is consistent with a corresponding reduction in the electron extended state mobility. The magnitude of the mobility reduction is found to be quantitatively consistent with potential fluctuations which arise from ionized dopants for compensated doping levels up to about 100 vppm.     

Effect of the hydrogen content on optical band gap in a-Si:H:N

The effect of the hydrogen content on the optical band gap in glow discharge a-Si:H:N produced from SiH₄ and N₂ mixtures is demonstrated. The hydrogen content in the film can be well controlled by making a non-plasma-excited region above the substrate surface during deposition. When the concentration of hydrogen is high, a large amount of nitrogen atoms included in the film does not cause a widening of the optical band gap. The effects of the hydrogen content on the infrared absorption peak wavelength relevant to SiN lattice vibration and the optical band gap are discussed.     

Electronic states in a-Si:H/c-Si heterostructures

We have investigated PECVD-deposited ultrathin intrinsic a-Si:H layers on c-Si substrates using UV-excited photoemission spectroscopy (hν = 4–8 eV) and surface photovoltage measurements. For samples deposited at 230 °C, the Urbach energy is minimal, the Fermi level closest to midgap and the interface recombination velocity has a minimum. The a-Si:H/c-Si interface density of states is comparable to that of thermally oxidized silicon interfaces. However, the measured a-Si:H dangling bond densities are generally higher than in thick films and not correlated with the Urbach energy. This is ascribed to additional disorder induced by the proximity of the a-Si:H/c-Si interface and H-rich growth in the film/substrate interface region.     

Back contacted a-Si:H/c-Si heterostructure solar cells

This paper shows how the amorphous/crystalline silicon technology can be implemented in the interdigitated back contact solar cell design. We have fabricated rear-junction, backside contact cells in which both the emitter and the back contact are formed by amorphous/crystalline silicon heterostructure, and the grid-less textured front surface is passivated by a double layer of amorphous silicon and silicon nitride, which also provides an anti-reflection coating. The entire self-aligned mask and photolithography-free process is performed at temperature below 300 °C with the aid of one metallic mask to create the interdigitated pattern. An open circuit voltage of 687 mV has been measured on a 0.5 Ωcm p-type monocrystalline silicon wafer. On the other hand, several technological aspects that limit the fill factor (50%) and the short circuit current density (32 mA/cm²) still need improvement. We show that the uniformity of the deposited amorphous silicon layers is not influenced by the mask-assisted deposition process and that the alignment is feasible. Moreover, this paper investigates the photocurrent limiting factors by one-dimensional modeling and quantum efficiency measurements.     

Local bonding of hydrogen in a-Si:H,a-Ge:H and a-Si,Ge:H alloy films

This paper reviews the local bonding of hydrogen (and deuterium) in a-Si:H(D), a-Ge:H(D) and a-Si, Ge:H(D) alloy films. We specify the types of atomic environments that have been identified through vibrational spectroscopy, primarily infrared (IR) absorption. We emphasize local modes and discuss the atomic motions that are responsible for the various spectral features. We discuss correlations between the occurrence of specific local bonding groups, e.g., polysilane and polygermane configurations, and the deposition techniques and parameters, including the substrate temperature (T_s), the gas mixtures and the RF power into a glow discharge, etc. We include a discussion of the theoretical approaches that have been used to treat vibrational modes in these materials. We emphasize the approximations that are valid because of the relatively light mass of the hydrogen and deuterium atoms compared with those of the silicon and germanium atoms. Finally we highlight the effects of neighboring alloy or impurity atoms on the frequencies of hydrogen vibrations in a-Si:H, and point out the differences between oxygen atom incorporation in a-Si and a-Ge alloys.     

Formation of microcrystalline structure in a-Si:H films prepared by RF sputtering

Formation of microcrystalline structure in a-Si:H films prepared by RF sputtering has been investigated by TEM and FT-IR. The Films deposited in pure H₂ have grain-like structure and tend to crystallize with increasing the gas pressure, while the films deposited in Ar containing 10 % H₂ usually become amorphous. With increasing input power and the gas pressure, however, the latter films tend to have amorphous-microcrystalline mixed structure, and corresponding to this structural change, shift of optical absorption edge to lower energy and decreases of resistivity and activation energy of its temperature dependence are observed.     

Complex study of mechanical properties of a-Si:H and a-SiC:H boron doped films

The aim of the present work is to provide the complex study of the mechanical properties of p-doped a-Si:H and a-SiC:H thin films prepared under different plasma conditions. For the investigation of the samples we used mainly the continuous depth sensing indentation technique (DSI), pin-on-disc test and internal stress measurement. The morphology of the thin film surface and the indentation prints are studied using optical microscopy, scanning electron microscopy (SEM) and topography mode of atomic force microscopy (AFM). The dependence of the mechanical parameters upon the deposition conditions were compared with the optoelectronic properties of studied films.     

Photoelectric features of vacuum-deposited a-Si:H/Alq3 blends

Using three electrode vacuum system for glow discharge of 5% SiH₄ + 95% Ar gas mixture together with thermal evaporation of phosphorus or boric aced, the n- and p-type a-Si:H layers have been deposited. By co-evaporation of phosphorus or boric aced the conductivity of a-Si:H layers was changed in 10^?11–10^?3 Ω^?1 cm^?1 or 10^?11 –10^?8 Ω^?1 cm^?1 range, respectively. Blends of a-Si:H and tris-(8-hydroxyquinoline) aluminum (Alq₃) have been vacuum-deposited by simultaneous glow discharge of 5% SiH₄ + 95 % Ar gas mixture and thermal co-evaporation of Alq₃. Photoluminescence spectrum of a-Si:H/Alq₃ blend coincident with one of Alq₃ was observed at room temperature.     

Optical absorption spectra of a-Si:H MIS structure measured by transient photocapacitance spectroscopy

The transient photocapacitance spectroscopy (TPC) was applied to measure the optical absorption spectra of hydrogenated amorphous silicon (a-Si:H) in metal-insulator–semiconductor (MIS) structure. The measured spectra show the features of optical transitions from both D⁰ and D⁻ defect bands to conduction band. The stability of measurement was checked against the change of probe frequency. The availability of TPC in detecting the defect density changes was also tested by checking the well-known defect density increase in a-Si:H after light illumination.     

电阻蒸发铝薄膜结构及其对非晶硅太阳电池性能的影响

本文首先采用电阻蒸发法制备了不同厚度的Al薄膜,并选择了两个典型厚度的Al薄膜制备工艺来制备非晶硅太阳电池的Al背电极,研究了Al背电极厚度对电池性能的影响.结果表明,Al背电极的厚度由800nm减薄到70nm时,电池的Voc平均值由0.826V增加到0.829V,电池的Jsc平均值由11.747mA/cm2减小到11.318 mA/cm2,电池的FF平均值由0.701增加到0.728,而电池效率的平均值略有增加,由6.803;增加到6.833;.用扫描电镜(SEM)和X射线衍射(XRD)研究了玻璃衬底上蒸发的Al薄膜和非晶硅电池Al背电极表面形貌和微观结构的变化,分析了电池性能随Al背电极厚度变化的原因.     

Initial stage of growth of the GD a-Si:H

The time dependences of the optical emission intensities of SiH,H and He lines and also of the gas temperature have been studied. It is demonstrated that 10–100 sec are necessary for full stabilization of plasma. This can explain the different properties of the initial 30–300 Å layer of a-Si:H.     

GZO/Al复合背电极对非晶硅太阳能电池的影响

随着能源紧缺与环境污染问题的日益严重,太阳能的开发利用越来越受到重视,其中非晶硅薄膜太阳能电池由于其制备工艺简单、价格低廉等优点被广泛地研究.为了使非晶硅薄膜太阳能电池得到更好地利用,提高其转换效率和稳定性显得尤为重要.引入复合背电极是提高非晶硅太阳能电池性能的有效手段,其中对GZO/Al复合背电极的研究还未见报道.在该工作中,利用磁控溅射法在非晶硅电池上制备了GZO/Al复合背电极,研究了复合背电极的制备条件及其对非晶硅太阳能电池性能的影响.结果显示,当GZO层的溅射功率为90 W、Al层的溅射功率为90 W时,具有复合背电极的太阳能电池表现出较好的光电转换性能,其短路电流(ISC)、开路电压(VOC)、填充因子(FF)和电池的光电转换效率(η)分别为8.92 mA、1.55 V、54.48;和7.53;.相较于单层Al背电极的太阳能电池,其光电转换效率大幅提高了47.6;(相对效率).     

Characterization and luminescence of a-Si:H:Cl films

a-Si:H:Cl films have been deposited by glow-discharge and characterized by infrared transmission, optical absorption and photoluminescence. The influence of growth parameters on the H and Cl content has been investigated. The luminescence spectra show that three different radiative transitions can occur, at 0.75, 0.95 and ～1.3 eV. These bands have been interpreted respectively in terms of the following recombinations: defect to defect, defect to band tail, band tail to band tail.     

P／I界面处理对a-Si：H柔性太阳能电池性能的影响

采用等离子体辅助化学汽相沉积(PECVD)技术制备本征非晶硅薄膜,对p/i界面进行处理.在此基础上,制备P型微晶硅(μc-Si:H)薄膜与柔性太阳能电池.对P型硅薄膜及太阳能电池的性能进行研究.结果表明:对p/i界面采用H等离子体处理,再引入一定厚度的成核层,可以成功得到高电导率的P型微晶硅窗口层,提高柔性太阳能电池的光伏特性.其中的成核层,不仅促进微晶相P层的生长,还可以起到界面缓冲层的作用.     

Small-angle X-ray scattering studies of a-Si:C:H

Small-angle X-ray scattering studies have been performed on a series of four a-Si:C:H alloys, prepared by rf glow discharge decomposition of varying proportions of propane and silane, in an attempt to elucidate their mesoscopic structure. The observed broad scattering peak has been interpreted as originating from irregular, elongated voids with a repeat distance of about 20 Å and correlation length of about 25 Å. The implications of this result in explaining the photo-oxidation properties of the material are also discussed.