Theory of electron escape from the surface of liquid helium

We have studied the properties of an electron bubble close to the surface of liquid³ He, by using a Density Functional approach. We find that up to an electron-surface distanced ₀ 23 Åthe bubble is stable, while at smaller distances it becomes unstable and bursts. A potential energy barrier /K _B 38°K for the thermal emission of electrons is obtained from our results, in agreement with experiments. Even when the electron-surface distance is larger thand ₀, however, tunneling through the surface layer dominates the electron escape probability. Large deviations of the electron potential energy from its ideal value are found close to the surface. These deviations have a profound effect on the calculated decay rates of the tunneling curent, which are much smaller than those obtained previously and in semi-quantitative agreement with experiments.     

Band gap states of V and Cr in 6H-silicon carbide

Ti, V and Cr in n-type 6H-SiC were investigated by radiotracer deep level transient spectroscopy (DLTS). Doping with the radioactive isotopes ⁴⁸V and ⁵¹Cr was done by recoil implantation followed by annealing (1600 K). Repeated DLTS measurements during the elemental transmutation of these isotopes to ⁴⁸Ti and ⁵¹V respectively revealed the corresponding concentration changes of band gap states. Thus, three levels were identified in the band gap: a Cr level at 0.54 eV and two V levels at 0.71 and 0.75 eV below the conduction band edge. There are no deep levels of Ti in the upper part of the band gap. Received: 28 April 1997/Accepted: 16 May 1997     

Shallow acceptor population and free hole concentration in Si: In and Si:Ga with IR-photoexcitation

Hall measurements at low temperaturesT<50 K have been performed on Si:In (N _In10¹⁷ cm^–3) and Si:Ga (N _Ga10¹⁸ cm^–3) with infrared photoexcitation of holes into the valence band. It is shown in quantitative agreement with a theoretical model that the population of shallow acceptors, e.g. B and Al, which are present as impurities in concentrations ofN _B,Al10¹²-10¹⁴ cm^–3 strongly affects the photoexcited hole concentration. Photo-Hall measurements can, therefore, serve as a tool for the determination of low impurity acceptor concentrations in the case of high In- or Ga-doping. Hole capture coefficientsB _In=6×10^–4 (T/K)^–1,8 cm³ s^–1 andB _Ga=2×10^–4 (T/K)^–1 cm³ s^–1 have been determined.     

Electrical switching in germanium telluride glasses doped with Cu and Ag

Electrical switching in germanium telluride glasses containing metallic atoms (Cu and Ag) has been investigated. All these glasses are found to exhibit memory switching. The switching fields of these glasses are compared with the thermal parameters evaluated from DSC studies and the results are explained on the basis of the thermal model. The composition dependence of the switching field and the thermal parameters show interesting variations at the critical compositions which correspond to the rigidity percolation and the chemical thresholds of these glasses. Received: 11 January 1999 / Accepted: 14 April 1999 / Published online: 14 July 1999     

Effect of Tunneling Current on Schottky Barrier Height in ZnO Varistors at Low Temperature

On the basis of the Schottky barrier and thermionic emission models, the temperature dependence of barrier height in ZnO varistors is investigated by the I - V characteristics in a wide temperature range from 93 K to 373 K. The obtained barrier height decreases with reducing temperature, which is ascribed to the contribution of tunneling current in measured current. From the proposed equivalent circuit, it is suggested that two current components coexist. One is thermionic emission current, which reflects the thermionic emission barrier height. The other is tunneling current, which appears even at low voltage, especially in low temperature ranges, and thus makes the barrier height obtained from measured current vary with temperature.     

Light-intensity dependence of slow-relaxation phenomena in semi-insulating GaAs

Quenching-only and quenching-enhancement phenomena in low-temperature photoconductivity (PC) of SI GaAs have been studied as a function of light intensity for photons in 1.0–1.2 eV energy range. Quenching-only of PC occurs only at high light intensities (above 10¹⁴ photons/cm² s) and reflects well-known bleaching of EL2 defects. On the contrary, the quenching-enhancement effect can be observed only for several orders of magnitude lower light intensities and neither the quenching nor the enhancement part of low-temperature evolution of PC is directly connected with EL2 defects, but reflects the time evolution of the occupancy of deep traps other than EL2. It was also found that bleaching of EL2 is quite an unefficient process.     

Theoretical approaches to nonlinear and chaotic dynamics of generation-recombination processes in semiconductors

We present an overview of recent progress in the theoretical modelling of nonlinear and chaotic dynamics induced by generation and recombination processes of charge carriers. Impact ionisation of impurities is the autocatalytic, i.e. destabilizing, step of three different physical mechanisms for spontaneous, self-sustained oscillations of the carrier density. The restoring force is furnished by one of the following three processes: (i) dielectric relaxation of the internal electric field, (ii) energy relaxation of the hot carriers, and (iii) trapping at impurities, where the discrete nature of the individual generationrecombination processes is taken into account.     

A new combination of scattering mechanisms for transverse runaway (TR) of hot electrons

A new combination of energy and momentum scattering mechanisms has been found at which the transverse runaway (TR) of hot electrons takes place. Up to now only two combinations of scattering mechanisms at which TR occurred have been known. These two combinations were obtained by analytical solution of a complex integral equation at certain approximations. In the present work, using modern numerical methods, with no above-mentioned approximations, a solution of the integral equation for a new combination of scattering mechanisms has been found.In the work physical conditions responsible for dominance of corresponding scattering mechanisms are also analyzed.     

Multi-exponential analysis of DLTS

Deep-level transient spectroscopy (DLTS), which is widely used to characterize deep impurity centers in semiconductors, assumes a single exponential wave form for the transient junction capacitance. When there are several closely spaced energy levels this assumption is no more valid, and the conventional DLTS may lead to errorneous results. To overcome this difficulty we propose here a novel method which we call the multi-exponential DLTS(MEDLTS). The transient wave form of the junction capacitance is directly analysed into multi-exponential compouents using the nonlinear least-squares analysis program DISCRETE developed by Provencher. The resolved time constants of these components are then displayed in the form of aT ²–1/T plot. According to the results of simulation with various parameters MEDLTS is shown quite effective to resolve closely spaced energy levels which can not be resolved by the conventional DLTS. As an example of the application of this method deep levels in Si: Au were investigated. The results have shown that a single peak in conventional DLTS actually consists of two adjacent levels with activation energies and capture cross-sectionsE _B1=0.49 eV, _B1=1.1×10^–14cm² andE _B2=0.46 eV, _B2=1.3×10^–15 cm² and with amplitude ratio 11.     

Saturation of ionization edge absorption by donors in germanium

A study of saturation of the absorption and photoconductivity of Sb and P donors in Ge for radiation of 90 m wavelength, i.e., of energy very closely above their ionization edges is presented at T=9.3 K. Under these conditions negligible heating by the excess radiation energy is expected, which provides a convenient opportunity to study the kinetics of photoionization and recombination. From these measurements we have determined the donor capture cross section of electrons at 9.3 K to be _c=(1.2±0.7)×10^–12cm^–2, and the relaxation time from the 2s to the ground state as ₂₁=(5.8±1.0)×10^–10s. The saturation intensity of the absorption coefficient is around three orders of magnitude higher than the saturation intensity of the photoconductivity. We explain the nonlinear photoconductivity by the Debye-Conwell dependence of the mobility on the number of photoionized donors and compensating acceptors.     

A negative differential conductivity due to recombination and impact ionization in semiconductors at low temperatures

The probability of impact ionization and the recombination time are known to increase monotonically with the electric fieldE. I show that at low temperatures both functions achieve a maximum and decrease in the electric field range where the emission of optical phonons with subsequent impurity scattering dominate. This nonmonotonicity results in three different types of N-shaped negative differential conductivity (n-ndc). The carrier concentration and the current decrease whenE increases due to decreasing of the impact ionization probability for weakly compensated samples and of the recombination time for highly compensated samples. At the antithreshold electric-field impact ionization dies out, which results in a dramatic decrease of the current for intermediately compensated samples. This huge n-ndc could be used in a novel type of the Gunn diode. The essential increase of threshold electric field of impact ionization is also predicted, and the effect could enhance the efficiency of photodetectors.The research was supported by the Alexandervon-Humboldt-Foundation     

Characterization of defects introduced in Sb doped Ge by 3 keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS)

We have used deep level transient spectroscopy (DLTS), and Laplace-DLTS to investigate the defects created in antimony doped germanium (Ge) by sputtering with 3 keV Ar ions. Hole traps at E_V+0.09 eV and E_V+0.31 eV and an electron trap at E_C−0.38 eV (E-center) were observed soon after the sputtering process. Room temperature annealing of the irradiated samples over a period of a month revealed a hole trap at E_V+0.26 eV. Above room temperature annealing studies revealed new hole traps at E_V+0.27 eV, E_V+0.30 eV and E_V+0.40 eV.     

Defect behaviors in n-channel power VDMOSFETs during HEFS and thermal post-HEFS annealing

The results of positive/negative Fowler-Nordheim high electric field stress and thermal post-high electric field stress annealing of commercial n-channel power VDMOSFETs have been presented. They have shown that gate bias sign has an influence on the fixed trap behavior during high electric field stress, but has no influence on any defect type behavior during thermal post-high electrical field stress annealing. In addition, slow switching traps have different behavior, but fast switching traps have the same behavior during thermal post-high electrical field stress annealing and thermal post-irradiation annealing.     

Nearest neighbor effect on capture cross sections measured in IR phototransients on Si:In

The extrinsic photoconductive decay at T=20–100 K is analyzed in FZ-grown Si: In material after pulsed irradiation by a PbSSe infrared laser (=4 m). Trapping time constants (=10 ns-100 s) are resolved for the prevalent In acceptor (N _In=10¹⁶–10¹⁷ cm^–3) and for additional shallow acceptors B, Al, and the X(In)-center present at low concentrations (N=10¹²–10¹⁴ cm^–3). Hole capture cross sections determined for the acceptor levels show a large scatter over up to 4 orders of magnitude. It is shown that the capture cross section is dependent on all the dopant concentrations present in the sample due to nearest neighbor interaction. Due to the formation of donor-acceptor dipoles, the capture cross section assumes low values. A model calculation of the interaction based on only fundamental parameters of Si is in accordance with the experimental data within the experimental error. The hole capture cross sections for isolated acceptors are _p=1×10^–12, 1×10^–14, 1×10^–13, 2.5×10^–13 cm² for indium, X-center, aluminum, and boron at the temperatures T=95 K, 100 K, 70 K, 45 K, respectively.     

Electron traps in wide-gap n-Hg0.3Cd0.7Te characterized by time-resolved photoconductivity

Time-resolved photoconductivity measurements have been used to characterize electron traps in wide-gap n-HgO_0.3Cd_0.7Te for the first time. The characterization was made possible by combining the time-resolved photoconductive data with the analytical method conventionally used in DLTS spectroscopy. Two electron traps were found in the band gap with 61 meV and 79 meV below the conduction band edge, their concentrations are 1.1×10¹³ cm^–3 and 5.8×10¹¹ cm^–3, respectively. Compared with DLTS spectroscopy, this characterization method markedly simplifies sample preparation and experimental procedure.     

A new doping superlattice photodetector

A new GaAs photodetector with high sensitivity in the whole 0.8–1.4m wavelength range has been fabricated from totally depleted GaAs doping superlattices grown by molecular beam epitaxy. Photoexcited electrons and holes are separated in real space by the space-charge field of the doping superlattice immediately after excitation, yielding a high quantum efficiency of this device. Because of the complete depletion, the doping superlattice behaves like a highly resistive material, which allows application of high electric field along the layers via selectiven ⁺ — andp ⁺ -electrodes. The sensitivity of this device at 1.3 m reaches more than 90% of the original band edge response at 0.85 m, and the external quantum efficiency amounts to 65% at 0.85 m. This excellent photoresponse at longer wavelengths arises from an extremely high electric field composed of the intrinsic space charge field and applied external field, and from the existence of pronounced tail states in the forbidden gap region of the superlattice.     

Noise and correlation functions of hot carriers in semiconductors

We present a unifying theory of electronic noise appropriate to semiconductor materials in the presence of electric fields of arbitrary strength. In addition to thermal noise, a classification scheme for excess noise indicating different microscopic sources of fluctuations responsible for number and mobility fluctuations is provided. On the basis of simple two-level models, numerical calculations using a Monte Carlo technique are performed for the case of p-type Si at 77 K. The primary quantity which is evaluated by the theory is the auto-correlation function of current fluctuations which, subsequently, is analyzed in terms of correlation functions of the relevant physical variables. Accordingly, the corresponding current spectral-densities are determined and then compared with direct experimental results and/or analytical expressions. Important subjects which have been investigated are: (i) the effect of field assisted ionization on generation-recombination noise from shallow impurity levels; (ii) the contribution to the total noise spectrum of cross-correlation terms coupling fluctuations in velocity with those in energy and number; (iii) the current random telegraph signal and the corresponding spectral density associated with a mobility fluctuator. In all cases the numerical calculations are found to be in satisfactory agreement with experiments and/or analytical expressions thus fully supporting the physical reliability of the theoretical approach here proposed.List of the Symbols Used e Absolute value of the electron charge - f Frequency - f Distribution function - g ₁ Scattering strength with the scatter in state 1 - g ₂ Scattering strength with the scatter in state 2 - Reduced Planck constant - j Total current density - j _c Conduction current density - j _d Displacement current density - j _x Component along the x direction of the total current density - k Carrier wavevector - m Carrier effective mass - m ₀ Free electron mass - r Position vector - s Average sound velocity - t Time - u Fraction of ionized carriers - u _i Random telegraph signal related to carrier state - u _m Random telegraph signal related to scatterer state - v _d Ensemble average of the free carrier drift-velocity - v _i Carrier group velocity - v _t Ensemble average of the carrier velocity in the direction transverse to the applied field - v _ix Component along the x direction of the carrier group velocity - v _d ^r Ensemble average of the reduced drift-velocity - v ^r _i Reduced velocity component in the field direction of the i-th particle - v _ix ^j Reduced velocity component along the x axis of the i-th particle in band j - v ^r _ix Reduced velocity component along the x axis of the i-th particle - x _d Ensemble average of the carrier displacement along the x direction from the initial position - x _i Displacement along the x direction of the i-th carrier from the initial position - y _i i-th stochastic parameter - A Cross-sectional area of a homogeneous sample - C _I Auto-correlation function of the total current fluctuations - Auto-correlation function of the total current fluctuations due to mobility fluctuations - D Diffusion coefficient - D _t K Optical deformation potential - E Electrical field strength - E Electric field - E _x Component of the electric field along the x direction - E ₁ ⁰ Acoustic deformation potential - G Conductance - I Total current - I ₀ Total current in the voltage noise operation - I _m Total current associated with mobility fluctuations - I ^V Total current in the current noise operation - K _B Boltzmann constant - L Length of a homogeneous sample - N Number of free carriers which are instantaneously present in the device - N _A Acceptor concentration - N _I Total number of carriers inside the device participating in the transport (here assumed to be constant in time) - N _T Total number of carriers which are instantaneously present in the device - S _I Spectral density of current fluctuations - S _V Spectral density of voltage fluctuations - Spectral density of current fluctuations associated with the mobility fluctuations - Spectral density of current fluctuations due to correlations between fluctuations in number and velocity - Spectral density of current fluctuations due to generation-recombination processes - Spectral density of current fluctuations due to free carrier drift-velocity fluctuations - S _I ^l Longitudinal component with respect to the applied field of the current spectral-density - S _I ^t Transverse component with respect to the applied field of the current spectral-density - T Absolute temperature - T _e Electron temperature - V Electrical potential - V ^I Electrical potential in the voltage noise operation - W Collision rate - Z Small signal impedance - Poole-Frenkel factor - Equilibrium generation rate - _E Field dependent generation rate - Typical energy for thermally escaping from the impurity level - v _d ⁽⁰⁾ Fluctuation of the ensemble average of the driftvelocity associated with Brownian-like motion - v _d ^r(0) Fluctuation of the ensemble average of the reduced drift-velocity associated with Brownian-like motion - Carrier energy - ₀ Vacuum permittivity - _a Energy of the acceptor level - _r Relative static dielectric constant - Angle between initial and final k states - _op Optical phonon equivalent temperature - Mobility - ₀ Chemical potential - ₁ Mobility with the fluctuating scatterer in state 1 - ₂ Mobility with the fluctuating scatterer in state 2 - ₀ Crystal density - _E Field dependent volume recombination rate - _eq Equilibrium volume recombination rate - Conductivity - _g Cross-section for impact ionization - _c Average scattering time - _g Generation time - _l Carrier lifetime - _m Scatterer lifetime - _m1 Mean value of the time spent by the fluctuating scatterer in state 1 - _m2 Mean value of the time spent by the fluctuating scatterer in state 2 - _r Average recombination time - _T Transit time - Scattering rate - _AB Correlation function of the two variables A and B     

Electrical switching studies on As<Subscript>40</Subscript>Te<Subscript>60-x</Subscript>Se<Subscript>x</Subscript> and As<Subscript>35</Subscript>Te<Subscript>65-x</Subscript>Se<Subscript>x</Subscript> glasses

The I–V characteristics of bulk As₄₀Te_60-xSe_x and As₃₅Te_65-xSe_x glasses have been studied with a current sweep of 0–18 mA-0, over a wide range of compositions (4≤x≤22). All the glasses studied showed a threshold electrical switching behaviour. The number of switching cycles withstood by the samples has been found to depend on the ON-state current. It is seen that the switching voltages increase with increase in selenium content. Further, the switching voltages are found to be almost independent of the thickness of the sample (d), in the range 0.18–0.3 mm. Also, the switching voltages and the number of switching cycles withstood by the samples are found to decrease with temperature. Received: 6 November 2002 / Accepted: 8 November 2002 / Published online: 29 January 2003 RID="*" ID="*"Corresponding author. Fax: +91-80/360-0135, E-mail: sasokan@isu.iisc.ernet.in     

Screening due to non-equilibrium carriers in presence of deep repulsive traps

The characteristics of screening length due to non-equilibrium electrons at low lattice temperatures are investigated theoretically, when the lifetime of the carriers is controlled by deep repulsive traps. The calculations have been made covering a wide range of the electric field, starting from a weakly heated carrier ensemble up to the onset of impurity breakdown. Apart from becoming field dependent, the screening length now shows a rather complicated dependence upon the lattice temperature. The numerical results for high-purity covalent semiconductors like Ge and Si show that the characteristics of the screening length are now significantly different from what one obtains for an ensemble of carriers that is in thermodynamic equilibrium with the lattice atoms.     

Determination of localized level energies by a statistics of the fermi-level

For a very large number of samples of a semiconducting material, which is not intentionally doped, the Fermi-level coincides approximately with the respective energy levels of the accidential impurities and defects. Based on this fact, the energies of localized levels were determined from a statistic of the Fermi-level in CdSe platelets. These energies agree very well with most of the values obtained with different methods by other authors.