K-Na离子交换单模平面波导的制备及其表征

通过K-Na离子交换技术制备了多模玻璃平面波导.采用棱镜耦合技术测量了波导的有效折射率,用IWKB方法拟合得到K-Na离子交换波导的折射率分布符合高斯分布,由色散曲线得到单模波导的制备条件(即扩散深度范围),从而得出单模波导的离子交换时间范围,制备出单模波导,并通过求解WKB色散方程得出单模波导的表面折射率.用普通数码相机,通过对离子交换平面玻璃光波导传输线进行数字成像,根据传输线上的光强分布拟合出光强传输衰减曲线,计算出单模波导的传输损耗大约为0.4 dB/cm.     

一阶模的滤除及在Y分支和多模干涉结构中的应用

Y分支和多模干涉结构广泛应用于平面光波导器件中，在这些器件中，Y分支和多模干涉结构输出对称性具有重要意义。引入Y分支和多模干涉结构输出的不对称主要原因是这两种结构中产生了一阶导模，设计一种新的耦合器结构，在这个结构中．两根单模波导分别放置在一根多模波导两边，并且单模波导的传播常量与多模波导的一阶模的传播常量相同，这种结构可以将一阶导模滤除。在Y分支和多模干涉结构中使用了这种结构，模拟结果表明，采用这种耦合器的Y分支和多模干涉结构具有非常好的输出对称性。     

三平行光子晶体单模波导的耦合特性及其应用

将三光子晶体单模波导的相互耦合看成一个多模干涉系统.本征模的色散曲线相交或近于相交并出现简并模，简并模之间存在强烈耦合并导致模式的分布方式发生转变.多模干涉系统中，不同波长的光波能量在传输过程中由于相干而具有不同的空间输出行为，在近简并点处多模之间的相干解除，能流限制在原输入方向，不发生转移.三光子晶体单模光波导的这种特性可用来制作波分复用或解复用器件. 关键词： 光子晶体波导 简并模 多模干涉 波分复用或解复用     

采用四根单模光纤束实现消逝波原子(或分子)波导的理论分析

提出了一种利用四根亚微米单模光纤束实现冷原子(或冷分子)波导的新方案，计算了四光纤束内空心区域的消逝波光场及其光学囚禁势.研究表明这种蓝失谐的空心消逝波光场同样可用于实现冷原子(或冷分子)的激光波导，而且与传统的中空光纤原子波导方案相比，不仅简单方便，造价低廉，而且更容易实现冷原子物质波的高效单模波导. 关键词： 单模光纤 消逝波 原子(或分子)波导     

金属包层对称平面单轴晶体波导的模式场(Ⅱ)

对于晶体光轴平行于波导界面的结构,讨论了光在金属包层对称平面单轴晶体波导(波导层是单轴晶体,两个波导界面均为金属)内的传输特性.解析地得到了这种结构下波导模式场的精确解.模式场的性质因单轴晶体的性质不同而异.对于正单轴晶体,波导的主模是横电波,任何频率的光波均可激励该模式;当频率满足一定条件时,波导内传输单模,否则,将激励起高阶模式.高阶模既非TE波,也非TM波,而是两者耦合而成的混合模.对于负单轴晶体,波导的主模是一种混合模,该模式同样可被任何频率的光波所激励;当频率满足一定条件时,波导内传输单模,否则 关键词： 平面金属波导 单轴晶体 模式场 混合模     

离子交换LiNbO_3:Fe平面光波导中两波混合的研究

本文利用耦合波理论分析推导了单模平面光波导中两波混合的耦合波方程和弱相干光放大率的表示式.并且,在LiNbO_3:Fe单模平面光波导中进行了两波混合的实验研究,得到了与理论分析相符合的结果.     

锥形脊结构半导体光放大器的有限元分析

为提高半导体光放大器与单模光纤耦合效率，建立了半导体放大器的锥形脊结构模型。在该模型下利用有限元数值模拟方法分析，计算了波导区折射率、锥尖宽度、条形波导尺寸、渐变折射率波导层对锥形脊结构模式扩展的影响。通过完善锥形脊结构参量的设计，获得了锥形脊结构半导体光放大器与单模光纤95％的耦合效率。     

阵列波导光栅波分复用/解复用器光谱响应效率的理论模型

基于单模光波导的本征模场分布,瑞利－索末菲衍射积分公式和天线原理的互易定理,给出耦合器中两个非接触平面光波导耦合特性的描述.基此,根据等光程差不等振幅多光束干涉的光场叠加原理,推导出新颖的阵列波导光栅波分复用/解复用器的光谱响应效率的解析函数表达式,这些表达式可为快速精确分析阵列波导光栅波分复用/解复用器的特性提供理论基础.同时,介绍了一个计算阵列波导光栅波分复用/解复用器特性的例子,给出其光谱响应度和信号通道串扰.     

光耦合理论及其在通信元器件中的应用

运用矩阵光学中变换矩阵的理论,并以重叠面积积分的方法为基础,推导出了普遍适用于计算光在光通信元器件中光耦合效率的理论公式,可通过设置边界条件计算单模光纤、扩束光纤、半导体激光二极管以及光波导等不同光学元器件之间的耦合效率。导出了计算单模光纤之间和单模光纤与扩束光纤之间存在横向偏移、轴向偏移时的耦合效率理论通用公式。阐述了扩束光纤的制作方法及光在扩束光纤中的传播,并根据所推导耦合效率理论公式计算结果与单模光纤间和单模光纤与扩束光纤间的耦合实验数据进行了比较。     

聚合物脊形光波导的变分有效折射率法分析

聚合物脊形光波导是聚合物集成光电子器件的重要构成单元.利用有效折射率法计算聚合物脊形光波导的横向折射率分布及有效折射率,将各区域中的光场分布近似用分段函数表达.基于导模满足的标量波动方程,利用变分法确定变分参量,以求得准确的横向光场分布.对聚合物脊形多模光波导基模和高阶模的色散特性与横向场分布进行分析,研究了波导结构参数对色散特性的影响,计算出TM基模和高阶模的光场分布,得出了聚合物脊形光波导的单模传输条件.研究表明,该方法计算量小、精度高,对聚合物光电子器件中脊形光波导的理论分析与设计优化提供了简单高效的方法.     

Planar optical tweezers using tapered-waveguide junctions

We demonstrate planar optical tweezers using the evanescent field of a silicon nitride tapered-waveguide junction between a singlemode waveguide and a multimode waveguide. Our experiments show that the junction embedded in a fluidic channel holds up to one and two polystyrene particles of sizes of 2.2 μm and 1 μm, respectively. The trapped particles are successively substituted by the incoming particles. Our experiments and numerical modeling reveal that the junction particle trapping depends on particle size and number.     

基于倏逝场耦合的石墨烯波导光传输相位特性仿真与实验研究

石墨烯材料应用到各种光波导器件中正成为新一代光子器件的重要发展方向之一,目前基于石墨烯的光纤和集成光子器件研究越来越受到国内外的重视. 本文建立了一种由微纳光纤耦合光倏逝场,并在石墨烯薄膜中传输的模型. 通过有限元分析法,研究了光在这种石墨烯波导中传输光场的强度分布和相位特性,并通过实验进行了验证. 结果表明,沿着微纳光纤-石墨烯光波导传播的倏逝场的强度分布和相位均受石墨烯材料作用,石墨烯材料能有效聚集和导行波导中传输的高阶模,在单位传输长度上具有更密集的等相位面. 本文提出了一种利用微纳光纤耦合光倏逝场研究石墨烯相位响应特性的新方法,对基于石墨烯波导的新型调制器、滤波器、激光器和传感器等光子器件的设计和应用具有一定的参考意义. 关键词： 石墨烯平面光波导 倏逝波 光场强度 相位     

Prism-coupled multimode waveguide refractometer

A new refractometer has been developed based on changes in the effective refractive index (RI) of the highest-order TE (or TM) mode in a prism-coupled multimode planar waveguide induced by interaction between an evanescent field and a liquid sample. The waveguide was a 100-mu;m -thick quartz plate fixed on a poly(methyl methacrylate) support containing a flow cell. A pair of prism couplers contacted the quartz plate in the flow-cell region. Such an optical sensor can detect the RI of liquid in a wide range by monitoring the resonant angle of the highest-order mode that changes order number with changes in the sample's RI. When a highest-order mode corresponding to a given RI range is used as the sensor probe, a slight RI change in this range can be detected by measurement of the output light intensity. With this method the sensor was demonstrated to have a resolution of 3x10(-5) for the RI of an aqueous solution. Combining this result with theoretical calculation indicates that the sensor can detect a 0.5-nm-thick monolayer adsorbed from an aqueous solution. Therefore, the sensor is suitable for real-time detection of biomolecular interactions.     

Optical waveguide modelling and design for evanescent field chemical sensors

Abstact Analytical and numerical techniques are presented for determining the sensitivity of optical waveguides as evanescent wave absorption sensors. Analytical expressions based on a ray optics approach are derived for planar and multimode fibre sensors. The matrix method is used for multilayer structures to determine both the sensitivity and the effect of intrinsic waveguide losses. It is shown how more complex waveguide geometries such as fibres with a D-shaped cross-section may be assessed by the finite-difference method combined with perturbation analysis. Some examples are given demonstrating how the results enable the design of sensors with optimum sensitivity.     

Fabrication and study of a metal-clad planar waveguide based biosensor

A metal-clad planar optical waveguide biosensor having five layer structure has been fabricated to study the detection of Pseudomonas and Pseudomonas-like bacteria. This waveguide is designed to increase the overlap of the evanescent field extension from the sensor face with the micro-scale biological objects in the bulk solution, to place most of the entire volume of the bacteria within the evanescent field. The results presented here leads to a significant optimization of the important design parameters to sense micro-scale biological objects. We have compared our computed results with the results obtained by similar non-metallic clad biosensor. The effect of affinity-layer refractive index on the sensitivity of these planar waveguides is also studied. We have shown this for some special cases by obtaining reflection dips at the particular angle of incidence. Our observations show that the metal-clad planar optical waveguide biosensor having higher affinity refractive index will give better sensitivity than other similar non-metallic clad biosensor. The validation of metal-clad planar optical waveguide sensor for the detection of Pseudomonas aeruginosa bacterium is also made.     

Adiabatic mode multiplexer for evanescent-coupling-insensitive optical switching

A novel adiabatic mode multiplexer enables a 2 x 2 optical switch whose operation does not depend on accumulated phase due to evanescent coupling between waveguides. The adiabatic mode multiplexer has a negligible insertion loss over C+L bands and modal cross talk better than -40 dB for any polarization state. Mode multiplexing is achieved by adiabatic transition from the fundamental mode of the single-mode waveguide to the higher mode of the multimode waveguide. Experimental measurement results for a device realized in silica-on-silicon technology are presented. By directly measuring the nonadiabatic transition probability, we show that the adiabatic mode multiplexer operates in the Landau-Zener regime.     

InGaAsP/InP evanescent mode waveguide optical isolators and their application to InGaAsP/InP/Si hybrid evanescent optical isolators

We theoretically investigated InGaAsP/InP evanescent mode waveguide optical isolators and proposed their application to InGaAsP/InP/Si hybrid evanescent optical isolators. InGaAsP/InP evanescent optical isolators are composed of semiconductor optical amplifier (SOA) waveguides having InGaAsP multiple quantum well (MQW) active layer and upper InGaAsP waveguide layer with ferromagnetic layer. Optical isolation is obtained for evanescent optical mode in the InGaAsP waveguide layer. InGaAsP/InP/Si hybrid evanescent optical isolators are theoretically proposed based on the idea of InGaAsP/InP evanescent optical isolators. InGaAsP/InP/Si hybrid evanescent optical isolators are composed of ferromagnetic metal loaded silicon evanescent waveguides with wafer-bonded InGaAsP/InP optical gain material. The optical isolation and propagation loss are discussed with the structure of silicon evanescent waveguides, and optical isolation of 8.0 dB/mm was estimated. The concept of semiconductor evanescent mode optical isolators is feasible with InP based photonic integrated circuits and advanced silicon photonics.     

The fabrication of polymer-based evanescent optical waveguide for biosensing

A polymer waveguide was fabricated to amplify the evanescent optical field for biosensing. The structure of waveguide was designed to propagate a normal single mode at the input and output regions for low loss beam coupling and propagation. A sensing region was formed in the middle of the waveguide to activate the evanescent mode and to induce high birefringence by depositing a thin dielectric film with a high refractive index on a single mode waveguide. A polymer waveguide with the dimensions of 7 μm-width and 2.5 μm-thickness was fabricated by photolithography and dry-etching. The active region of the TiO₂ thin film was fabricated with the dimensions of 20 mm-length, 20 nm-thickness and 2 mm-tapered tail. A polarimetric interference technique was used to evaluate the evanescent waveguide biosensor, and biomaterial such as glycerol was tested. The sensitivity of the sensor increased with increasing TiO₂ film thickness. For the fabricated waveguide with a 20 nm-thick TiO₂ film, the measured index change to the lead phase variation of 2π was 1.8 × 10⁻⁴.     

High-average-power Nd:YAG planar waveguide laser that is face pumped by 10 laser diode bars

A planar waveguide Nd:YAG laser is pumped with 430 W of power from 10 laser diode bars to produce a multimode output power of 150 W at an optical efficiency of 35%. Use of a hybrid resonator of the positive-branch confocal unstable type for the lateral axis and of one of the near-case I waveguide type for the transverse axis increased the laser brightness by a factor of ~26 with only 12% less power than in the multimode case.     

光波导振荡场传感器

针对消逝场传感器的不足,提出了一种传感介质处于波导芯层,且以超高阶导模为探针的光波导振荡场传感器.由于其波导芯层处于功率密度极高的振荡场区域,而超高阶导模又具有对芯层参数极为灵敏的性质,因此这种新型传感器的灵敏度大大增强.实现了超越消逝场传感器灵敏度极限值几个量级的位移传感器.