锗在高压下固化时的相演化及动力学成因

 报道了锗在高压下固化时亚稳相的形成和转化。通过原位观测锗在高压下固化过程中的电阻变化、差热信号，并结合X射线衍射分析，详细讨论了锗在高压下固化时的相演化行为。在我们所进行的实验条件下，当压力大于4 GPa时，熔态锗首先固化成金属锗，然后再向GeⅠ或GeⅢ相转变。还讨论了压力对锗的固化动力学参数的影响。     

食品中无机锗与锗—132的分别测定

采用氢化物发生－原子荧光光谱法（ＨＧ－ＡＦＳ），分别测定了保健饮品中的无机锗和β－羧乙基锗倍半氧化物（即锗－１３２），同时对于天然食品中无机锗和锗－１３２分别测定的条件也进行了初步的探讨。     

石墨炉原子吸收法测定血清中锗时十一种基体改进剂作用的研究

本文研究了无机及有机基体改进剂对血清中锗的灰化曲线的影响，以及对锗的增感效应。为血清中痕量锗的分析，提供了一个直接，快速，准确的方法。     

硅锗量子阱发光器件的探索

介绍了提高硅发光效率的一些途径，关阐述硅锗合金的发光的基础上，分析了硅锗量子阱的光致发光机理及特性，并介绍了硅锗量子阱电致发光研究的进展。     

ICP－AES法测定富锗酵母中微量元素

本文采用美国ＬｅｅｍａｎＬａｂｓ公司中阶梯光栅光谱仪测定了人工培养的富锗酵母中高含量锗及镁、铜、锌、铁、钾、钠等微量元素，研究了富锗样品的前处理方法，样品加标回收率在９０％－１０３％之间，测量相对标准偏差：锗１０％，镁、铜、锌、铁、钾、钠等元素小于７％。     

正丁醇萃取石墨炉原子吸收法测定微量锗

建立了萃取－石墨炉原子吸收法测定中草药、植物样品及水系沉积物中微量锗的方法。锗与钼酸铵在０．３ｍｏｌ／Ｌ的硝酸介质中，可以生成稳定的锗钼杂多酸盐，并能被正丁醇萃取，有机相直接进样测定。本方法采用钼酸铵浸渍处理石墨管，直接测定了枸杞、蕨麻等植物样品及水系沉积物中的微量锗。方法的检出限为６．０×１０（－１２）ｇ，对于３０ｎｇ／ｍＬ锗的测定相对标准偏差为５．０％     

含纳米锗粒二氧化硅薄膜的光致发光研究

以锗-二氧化硅(GSO)复合靶作为溅射靶，改变靶上锗与总靶面积比为0%，5%和10%，用射频磁控溅射方法在p型硅衬底上淀积了含锗量不同的三种二氧化硅薄膜.各样品分别在氮气氛中经过300至900℃不同温度的退火处理.通过对样品所作Raman散射光谱的分析，发现随着锗在溅射靶中面积比的增加，所制备的氧化硅薄膜中纳米锗粒的平均尺寸在增大.确定出随着退火温度由600℃升高到900℃，GSO(5%)样品中纳米锗粒的平均直径由5.4nm增至9.5nm.含纳米锗粒大小不同的二氧化硅薄膜的光致发光谱中都存在位于2.1eV     

X光激光薄膜锗靶的制备

 介绍了X光激光薄膜锗靶的制备工艺，在厚度为90nm的formvar膜上，采用磁控溅射技术沉积30~60nm厚的锗膜。对锗膜的应力进行了初步的测试与分析，制得的薄膜经干涉仪测量符合要求。     

提高X光激光相干性的镶嵌靶的研究

 在以锗等离子体为增益介质的X光激光实验研究中，使用铜锗镶嵌靶可以获得一维横向宽度很窄的柱状等离子体，这有利于X光激光的单横模输出。本文对铜锗镶嵌靶进行了实验研究。     

氧化硅层中的锗纳米晶体团簇量子点

采用氧化和析出的方法在氧化硅中凝聚生成锗纳米晶体量子点结构. 其形成的锗晶体团簇没有突出的棱角和支晶结构，锗晶体团簇的轮廓较圆混，故可以用球形量子点模型来模拟实际的锗晶体团簇. 对比了在长时间退火氧化条件下和在短时间退火用激光照射氧化条件下所生成的锗纳米晶体结构的PL光谱和对应的锗纳米晶体团簇的尺寸分布. 短时间退火氧化条件下生成的锗纳米晶体较小(3.28—3.96nm)，长时间退火用激光照射氧化条件下所生成的锗纳米晶体较大(3.72—4.98nm)；其分布结构显示某些尺寸的锗纳米晶体团簇较稳定，适当的氧化条件可以得到尺寸分布范围较窄的锗纳米晶体团簇. 用量子点受限模型计算了锗纳米晶体团簇的能隙结构，用Monte Carlo方法模拟了PL光谱和对应的锗纳米晶体团簇的尺寸分布，分别与实验结果符合较好. 关键词： 锗晶体团簇 纳米晶体 量子点 激光照射     

微波消解石墨炉原子吸收光谱法测定蒙山全蝎中的痕量锗

建立了石墨炉原子吸收光谱法测定蒙山全蝎中痕量元素锗的方法.通过程序控温、控压的分步微波消解方式消解样品,优化石墨炉升温程序,采用Ni(NO3)2为基体改进剂,以氘灯扣除背景,在265.2nm波长下测定蒙山全蝎中痕量元素锗.在选定分析条件下,锗的检出限为0.30μg/L,RSD的范围为1.2%-3.1%,回收率为88.9...     

霍尔离子源辅助制备长波红外碳化锗增透膜

为了提高锗基底的透过率和环境适应性,镀制了增透保护膜。应用电子枪蒸发加霍尔离子源辅助的方法沉积了碳化锗(Ge_1-xC_x)薄膜。通过固定霍尔离子源参数,控制沉积速率的工艺得到了不同光学常数的碳化锗薄膜。X射线衍射(XRD)测试表明,所制备的碳化锗薄膜在不同的沉积速率下均为无定形结构。采用傅立叶变换红外(FTIR)光谱仪测量了试片的透过率,使用包络法获得了相应工艺条件下的光学常数。在锗基底上双面镀制碳化锗增透膜后,长波红外7.5～11.5 μm波段的平均透过率T_ave>85%。经过环境实验之后的碳化锗膜层完好,证明碳化锗增透膜具有良好的环境适应性。     

Comments on the Lock-Crisp-West theorem with experimental examples

The application of the Lock-Crisp-West (LCW) theorem to positron-annihilation angular-correlation data for copper and germanium as well as to Compton profile data for germanium is presented and discussed. Deviations from the LCW prediction are observed for copper and for germanium, attributable to the positron's presence. In germanium the Compton results indicate near agreement with the LCW expectation; the sensitivity of the theorem is analyzed.     

X光激光薄膜锗靶的制备

介绍了X光激光薄膜锗靶的制备工艺,在厚度为90nm的formvar膜上,采用磁控溅射技术沉积30~60nm厚的锗膜。对锗膜的应力进行了初步的测试与分析,制得的薄膜经干涉仪测量符合要求。     

高纯锗探测器的广泛应用和自主研制进展

以目前国际上极为活跃开展的暗物质探测、无中微子双 衰变研究为例,评述了高纯锗探测器的重要性及其广泛的应用前景。介绍了己开展的高纯锗单晶、探测器制备的关键技术研究进展:合作单位已研制出了用于高纯锗单晶材料制备的区熔炉、单晶炉;并制备出直径为20  50 cm、纯度为12N(< 41011  atoms/cm3)、位错< 5000 atoms/cm2 的锗单晶;掌握了高纯锗探测器(平面型、同轴型)制备的关键技术,用进口高纯锗单晶材料制备出的同轴型高纯锗探测器对射线的能量分辨率及探测效率均达到进口产品指标,使用自制的12N 高纯锗单晶材料己制备出平面型高纯锗探测器。呼吁加速高纯锗研制的自主创新步伐,尽早实现其国产化目标。The article reviews importance and wide applications of HPGe detector, especially the application on the dark matter search experiment and double beta decay experiment. The research progress on the Highpurity germanium single crystal and HPGe detector in China has been introduced. The cooperation partner developed new type zone-refining furnace and single crystal furnace. The ultra-purity germanium single crystal with 20~50 cm, purity up to 12N(net impurity concentration is less than 41011 atoms/cm3), and dislocation less than 5 000 /cm3 was prepared. The key technologies for preparing planar and coaxial HPGe detector were mastered. The coaxial detector, which has been made of imported ultra-purity germanium single crystal has excellent energy resolution and efficiency as the imported commercial detector. The planar detector using selfmade germanium single crystal was also successfully manufactured. The research group appeals for speeding up the pace of independent innovation on the high-purity germanium, and achieving the high-purity germanium localization as soon as possible.     

Resonant Raman scattering by strained and relaxed germanium quantum dots

This paper reports on the results of resonant Raman scattering investigations of the fundamental vibrations in Ge/Si structures with strained and relaxed germanium quantum dots. Self-assembled strained Ge/Si quantum dots are grown by molecular-beam epitaxy on Si(001) substrates. An ultrathin SiO₂ layer is grown prior to the deposition of a germanium layer with the aim of forming relaxed germanium quantum dots. The use of resonant Raman scattering (selective with respect to quantum dot size) made it possible to assign unambiguously the line observed in the vicinity of 300 cm^?1 to optical phonons confined in relaxed germanium quantum dots. The influence of confinement effects and mechanical stresses on the vibrational spectra of the structures with germanium quantum dots is analyzed.     

A contribution to the question of thermal acceptors in germanium

The motion and decay of thermal acceptors in germanium was studied using the method of saturation and the extraction of solid germanium by means of a liquid alloy of Ge/Sn. The qualitative results obtained confirm that the production of thermal acceptors in germanium is conditioned by the presence of copper and in addition prove the applicability of this method to the solution of similar problems.     

Preparation of hydrogenated amorphous germanium by reactive thermal evaporation

Hydrogenated amorphous germanium was prepared by the thermal evaporation of high purity polycrystalline germanium in an atmosphere of hydrogen plasma produced by high voltage AC discharge of molecular hydrogen. The addition of hydrogen during the thermal evaporation of germanium is shown to improve the electrical properties of the resulting amorphous germanium films considerably by saturation of dangling bonds, if the dissociation of molecular hydrogen takes place. Hydrogenated sample deposited at 200°C has shown a high resistivity and an activation type conduction (with an activation energy of 0.38–0.39 eV) in measuring temperature range (above room temperature).     

痕量锗的HG-ICP测定及介质对其测定的影响的研究

采用氢化物发生-电感耦合等离子体原子发射光谱法测定痕量锗的方法,系统地考察了不同酸介质、NaBH₄浓度及共存元素的影响,确定了最佳测定条件。方法的检出限为0.2 ng·mL-1,精密度为0.9%。用环境标准物质进行对照,其测定值均在给定的标准范围之内。并且针对反应介质对锗测定的影响,进行了详尽的研究。     

苯基荧光酮法定量测定倍半氧化羧乙基锗(Ge-132)中的氧化锗

采用苯基荧光酮分光光度法测定β－羧乙基锗倍半氧化物（即锗－１３２）中的氧化锗,方法简便,相关系数达０．９９９６３,回收率９３％～１０７％。