共查询到19条相似文献,搜索用时 78 毫秒
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利用表面活性剂有效去除ULSI衬底硅片表面吸附颗粒 总被引:1,自引:0,他引:1
利用表面活性剂特性,通过改变硅片和颗粒表面ζ-电势来改变硅片表面和颗粒间静电力极性,有效地控制硅片表面颗粒吸附状态长期处于易清洗的物理吸附状态,在微电子清洗技术上实现了重要突破。 相似文献
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硅单晶研磨片表面状态的分析研究河北工学院(天津300130)刘玉岭,韩清涛,徐晓辉,李湘都硅片研磨是硅器件衬底加工过程中一个重要工序,研磨表面状态的好坏对后步工序的加工直至器件质量,尤其VLSI与ULSI的制备性能与成品率有着极重要影响。但是,这方面... 相似文献
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在硝酸/氢氟酸腐蚀液中加入表面活性剂对多晶硅片进行了腐蚀,并使用扫描电子显微镜和激光共聚焦显微镜观察硅片表面形貌的变化,在此基础上分析了硅片浸润性及反应物迁移率变化对腐蚀效果的影响。实验结果表明:加入表面活性剂后,腐蚀速率降低,在硅片表面形成了更均匀的绒面结构及亚微米结构,硅片的反射率从23%下降到18.5%,反射率的降低提升了太阳电池的受光面积。仿真结果表明,使用加入表面活性剂的腐蚀液后制备的太阳电池,其短路电流提升了0.25mA/cm2,光电转换效率提升了0.1%。 相似文献
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为了更有效地去除铜晶圆化学机械抛光(CMP)后清洗残留的SiO2颗粒,选择了2种阴离子型表面活性剂(SLS、TD-40)和2种非离子型表面活性剂(AEO-5、JFC-6),通过接触角、表面张力、电化学、分子动力学模拟实验探究了4种表面活性剂在铜表面的润湿性、吸附构型及吸附稳定性。通过优化表面活性剂质量浓度,选择达到吸附稳定时的质量浓度配置4种表面活性剂来清洗铜晶圆,利用扫描电子显微镜观测铜表面形貌,对比它们的清洗效果。随后选择TD-40和JFC-6进行复配,研究复配后表面活性剂对硅溶胶颗粒的去除效果。实验结果表明,使用体积比为2∶1的TD-40与JFC-6进行复配得到的CMP清洗液对SiO2颗粒的去除效果比单一表面活性剂的更好。 相似文献
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多层铜布线CMP后表面残留CuO颗粒的去除研究 总被引:1,自引:1,他引:1
This article introduces the removal technology of CuO particles on the post CMP wafer surface of multi-layered copper. According to the Cu film corrosion curve with different concentrations of HEO2 and the effect curve of time on the growth rate of CuO film, CuO film with the thickness of 220 nm grown on Cu a surface was successfully prepared without the interference of CuC12.2H20. Using the static corrosion experiment the type of chelating agent (FA/O II type chelating agent) and the concentration range (10-100 ppm) for CuO removal was determined, and the Cu removal rate was close to zero. The effect of surfactant on the cleaning solution properties was studied, and results indicated that the surfactant has the effect of reducing the surface tension and viscosity of the cleaning solution, and making the cleaning agent more stable. The influence of different concentrations of FA/O I type surfactant and the mixing of FA/O II type chelating agent and FA/O I type surfactant on the CuO removal effect and the film surface state was analyzed. The experimental results indicated that when the concentration of FA/O I type surfactant was 50 ppm, CuO particles were quickly removed, and the surface state was obviously improved. The best removal effect of CuO on the copper wiring film surface was achieved with the cleaning agent ratio of FA/O II type chelating agent 75 ppm and FA/O I type surfactant 50 ppm. Finally, the organic residue on the copper pattern film after cleaning with that cleaning agent was detected, and the results showed that the cleaning used agent did not generate organic residues on the film surface, and effectively removes the organic residue on the water. 相似文献
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近期研制的非离子型表面性剂,其分子量比各种离子型表面活性剂成数量级增加,破乳时破乳剂分子分散在石油乳状液中,破乳剂分子迅速扩散,润湿油水界面膜,尽而大大降低油水界面膜的张力。SP型破乳剂,是聚氧乙烯、聚氧丙烯十八醇醚,线型结构,见(电镜照像1),属于分子量较大的非离子型表面活性剂,也是油田上应用比较早,比较多的石油破乳剂,从电镜中拍摄到的SP169破乳剂分子像貌为线性结构,分子较长,呈弯曲状,理论结构式的设计模型与从电镜中拍摄到的分子像貌的形状一致,分子的平均长度为测量值9000A°左右,一个聚合单体的长度5A° 相似文献
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HgCdTe on Si: Present status and novel buffer layer concepts 总被引:2,自引:0,他引:2
T. D. Golding O. W. Holland M. J. Kim J. H. Dinan L. A. Almeida J. M. Arias J. Bajaj H. D. Shih W. P. Kirk 《Journal of Electronic Materials》2003,32(8):882-889
We discuss buffer-layer concepts for the synthesis of low defect-density HgCdTe epilayers on Si for both hybrid and monolithically
integrated, infrared focal-plane arrays (IRFPAa). The primary technical problems to overcome include the 19% lattice-parameter
mismatch between HgCdTe and Si, and the (211)B surface orientation required for molecular-beam epitaxy (MBE), the growth technique
of choice for HgCdTe. We provide a general overview of IRFPAs, motivations for realizing HgCdTe on Si, the current state-of-the-art
parameters as a baseline, and three novel buffer-layer concepts and technologies based on (1) obedient GeSi films on SiO2, (2) wafer bonding, and (3) chalcogenides. 相似文献
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针对化合物半导体与Si基晶圆异质集成中的热失配问题,利用有限元分析方法开展GaAs半导体与Si晶片键合匹配偏差及影响因素研究,建立了101.6 mm(4英寸)GaAs/Si晶圆片键合匹配偏差评估的三维仿真模型,研究了不同键合结构和工艺对GaAs/Si晶圆级键合匹配的影响,系统分析了键合温度、键合压力、键合介质厚度及摩擦... 相似文献
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非离子表面活性剂对助焊剂润湿性能的影响 总被引:4,自引:1,他引:3
在软钎焊免清洗助焊剂中分别添加了3种不同含量的非离子表面活性剂:TritonX—100、Tween—20和PEG2000,得到了3组助焊剂。使用这3组助焊剂和Sn0.7Cu无铅钎料在纯铜板上进行了铺展测试。结果表明,添加TritonX—100和添加Tween—20的质量分数均为0.6%时,钎料的润湿角最小值分别为30.07°和29.70°,铺展面积最大值分别为56.67mm2和58.53mm2;添加PEG2000质量分数为0.3%时,钎料的润湿角最小值为26.70°,铺展面积最大值为66.88mm2,比未添加时增加26.9%。适量加入非离子表面活性剂能够改善助焊剂的润湿性,并提高无铅钎料的铺展能力。 相似文献
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硅射频微带电路S参数模拟研究 总被引:2,自引:0,他引:2
对不同电阻率硅片射频微带电路S参数进行了模拟研究。建立了 5层结构的微带电路物理结构模型 ,对两种电阻率硅片上不同尺寸 (2× 10 - 5m到 2 0× 10 - 5m)微带线 1~ 10GHz频率范围内的S1 1 和S2 1 参数进行模拟计算。研究结果表明 :减少低电阻率硅片 (3~ 8Ω·cm)线条宽度对减小信号反射和提高传输有益 ;高电阻率硅片 (130~ 15 0Ω·cm)上细线条尺寸微带电路信号反射和提高传输特性也更好。频率越高 ,高阻硅片微带电路的高频性能更好。 相似文献
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硅离子注入对全耗尽SIMOX材料总剂量效应的影响 总被引:1,自引:1,他引:0
Total dose hardened fully-depleted SOI materials are fabricated on separation by implanted oxygen (SIMOX) materials by silicon ion implantation and annealing. The ID-VG characteristics of pseudo-MOS transistors pre- and post-irradiation are tested with ^60Co gamma rays. The chemical bonds and the structure of Si in the buried oxide are also studied by X-ray photoelectron spectroscopy and cross-sectional high-resolution transmission electron microscopy, respectively. The results show that Si nanocrystals in the buried oxide produced by ion implantation are efficient deep electron traps, which can significantly compensate positive charge buildup during irradiation. Si implantation can enhance the total-dose radiation tolerance of the fully-depleted SOI materials. 相似文献
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