Tight-binding model of spin-polarized tunnelling in (Ga,Mn)As-based structures

The Landauer–Büttiker formalism combined with the tight-binding transfer matrix method is used to describe the results of recent experiments: the high tunneling magnetoresistance (TMR) in (Ga,Mn)As-based trilayers and highly polarized spin injection in p-(Ga,Mn)As/n-GaAs Zener diode. For both TMR and Zener spin current polarization, the calculated values agree well with those observed experimentally. The role played in the spin dependent tunneling by carrier concentration and magnetic ion content is also studied.     

Many-body effects in spin-polarized two-dimensional electron gas

Many-body effects on the spin polarization are studied in an n channel inversion layer on Si (1 0 0) surface in a magnetic field parallel to the surface in random phase approximation. The spin polarization exhibits a discrete jump to a full polarization at the critical magnetic field in the low-density regime and the critical field is reduced considerably from that estimated by an extrapolation based on the zero-field susceptibility.     

High-efficiency spin filtering in salophen-based molecular junctions modulated with different transition metal atoms

Based on the density functional theory and nonequilibrium Green's function methods, we investigate the spin transport properties of the molecular junctions constructed by a homologous series of 3d transition metal(II) salophens (TM-salophens, TM = Co, Fe, Ni and Mn) sandwiched between two gold electrodes. It is found that among the four molecular junctions only Co-salophen junction can act as an efficient spin filter distinctively. The conductance through Co-salophen molecular junction is dominated by spin-down electrons. The mechanism is proposed for these phenomena.     

The critical role of the barrier thickness in spin filter tunneling

Spin filter tunneling is considered in the low bias limit as functions of the temperature dependent barrier parameters. We demonstrate the generation of spin polarized tunneling currents in relation to the magnetic order parameter, and discuss how an interfacially suppressed order parameter leads to a temperature dependent tunneling current asymmetry. Analyzing the full parameter space reveals that the often overlooked barrier thickness plays a critical role in spin filter tunneling. With all else fixed, thicker barriers yield higher spin polarization, and allow a given polarization to be achieved at higher temperatures. This insight may open the door for new materials to serve as spin filter barriers.     

Anisotropic quantum transport in monolayer graphene in the presence of Rashba spin–orbit coupling

We have studied spin-dependent electron tunneling through the Rashba barrier in a monolayer graphene lattices. The transfer matrix method, have been employed to obtain the spin dependent transport properties of the chiral particles. It is shown that graphene sheets in the presence of Rashba spin–orbit barrier will act as an electron spin-inverter.     

有机铁磁界面自旋极化接触构型效应

基于第一性原理,研究了三种不同的接触构型垂直吸附在镍表面的苯双硫分子的界面自旋极化.结果表明界面自旋极化强烈依赖于接触构型,接触构型的变化可使自旋极化由正值变为负值.通过分析投影态密度,发现界面处镍原子的3d轨道与硫原子的sp³杂化轨道发生了轨道杂化.模拟机械可控断裂结实验中的界面吸附构型,根据计算的界面自旋极化,利用Julliere模型得到磁电阻约为27%,与实验测量结果较为符合.     

Interface perpendicular magnetic anisotropy in Fe/MgAl2O4 layered structures

The recently reported MgAl₂O₄ tunnel barrier for the magnetic tunnel junctions (MTJs) is considered to be an alternative to the conventional MgO barrier, since a large tunnel magnetoresistance (TMR) ratio was obtained for the MgAl₂O₄‐based MTJs. In this study, we demonstrated large perpendicular magnetic anisotropy (PMA) arising from the interfaces of Fe(001)/MgAl₂O₄ layered structures, which can be useful for developing perpendicularly magnetized MgAl₂O₄‐based MTJs. A PMA energy density of 0.4 MJ/m³ was achieved for an epitaxially grown 0.7 nm thick Fe/MgAl₂O₄(001). Interestingly, the interface PMA was also obtained for the Fe/non‐epitaxially grown MgAl₂O₄ structures, which indicates that the crystallographic structure of MgAl₂O₄ layer has no critical influence on the obtained PMA.

     

Electron transport in a two-dimensional electron gas modulated by one ferromagnetic stripe and two Schottky metal stripes

The electron transport in a two-dimensional electron gas modulated by ferromagnetic and Schottky metal stripes is theoretically studied. We find that the transmission and conductance as well as polarization are very sensitive to the position of the Schottky metal stripe, the electric-barrier height and the energy of the incident electron.     

Spin-dependent proximity effects in ferromagnetic semiconductor/superconductor structures

Proximity effects in normal metal/insulator/ferromagnetic semiconductor/superconductor (NM/I/FS/SC) and NM/I/SC/FS junctions are studied based on an extended Blonder-Tinkham-Klapwijk (BTK) theory. It is found that the magnitude of the proximity effects depends to a great extent on the mismatches of the effective mass and band between the FS and SC. For NM/I/FS/SC junction, the transition of the tunneling conductance from “0” to “π” state is determined by the mass, magnetic exchange energy in FS and the thickness of FS. For NM/I/SC/FS junctions, the conductance spectrum is spin-dependent, indicating a local coexistence of weak ferromagnetism and s-wave superconductivity.     

Magnetic resonance absorption in isolated metal/insulator/metal nanodot arrays with transmission geometry

In this study, we have systematically investigated a magnetic resonance absorption and tunability of absorption wavelength in isolated metal-insulator-metal (MIM) nanodot arrays with transmission geometry. The elemental electromagnetic resonances and their hybridizations are studied using 3-dimensional finite-difference time-domain (FDTD) calculation and resonance properties including the resonance peak tunability, magnetic permeability and quality (Q) factor are characterized with respect to the coupling strength. We have found the existence of electric and magnetic resonance mode in the MIM (Au/MgF₂/Au) structure and the magnetic resonance has larger wavelength tunability than the electric resonance. The absorption cross section calculation revealed that absorption is the dominant extinction process at the magnetic resonance only. Magnetic permeability (μ) calculations for the various MIM parameters showed the maximum value of the imaginary part of μ is 16.1 with Q factor of 9.2 when the size of nanodot is 200 nm and the inter-dot distance is 300 nm. The presented calculations can be used to tune the response of the magnetic resonance absorption with a variable resonance wavelength and Q factor by using the simple MIM structures with transmission geometry.     

Electrical control of valley and spin polarized current and tunneling magnetoresistance in a silicene-based magnetic tunnel junction

We investigate the electronic transport in a silicene-based ferromagnetic metal/ferromagnetic insulator/ferromagnetic metal tunnel junction. The results show that the valley and spin transports are strongly dependent on local application of a vertical electric field and effective magnetization configurations of the ferromagnetic layers. In particular, it is found that the fully valley and spin polarized currents can be realized by tuning the external electric field. Furthermore, we also demonstrate that the tunneling magnetoresistance ratio in such a full magnetic junction of silicene is very sensitive to the electric field modulation.     

Lattice structures and electronic properties of MO/MoSe2 interface from first-principles calculations

Using first-principles plane-wave calculations within density functional theory, we theoretically studied the atomic structure, bonding energy and electronic properties of the perfect Mo (110)/MoSe₂ (100) interface with a lattice mismatch less than 4.2%. Compared with the perfect structure, the interface is somewhat relaxed, and its atomic positions and bond lengths change slightly. The calculated interface bonding energy is about −1.2 J/m², indicating that this interface is very stable. The MoSe₂ layer on the interface has some interface states near the Fermi level, the interface states are mainly caused by Mo 4d orbitals, while the Se atom almost have no contribution. On the interface, Mo-5s and Se-4p orbitals hybridize at about −6.5 to −5.0 eV, and Mo-4d and Se-4p orbitals hybridize at about −5.0 to −1.0 eV. These hybridizations greatly improve the bonding ability of Mo and Se atom in the interface. By Bader charge analysis, we find electron redistribution near the interface which promotes the bonding of the Mo and MoSe₂ layer.     

The influence of interface states and bulk carrier lifetime on the minority carrier behavior in an illuminated metal/insulator/GaN structure

An influence of electronic states at an insulator/GaN interface on the behavior of excess holes in an ultraviolet-illuminated metal/ SiO₂/n-GaN structure has been studied by numerical simulations for weak (gate bias of −0.1 V ) and strong (−1 V ) depletion, in a wide range of excitation light intensities (from 10¹⁰ to 10²⁰ photons cm⁻² s⁻¹) and for various bulk carrier lifetimes (from 1 to 100 ns). It has been found that the interface states with densities of 10¹² eV ⁻¹ cm⁻² dramatically reduce the total (integrated in the whole GaN layer) density of photogenerated holes and thus degrade the sensitivity of the metal/insulator/GaN-based photodetector.     

Electronic Transport and Magnetic Properties in Ferroelectric-Ferromagnetic Composites La5/8Ca3/8MnO3:ErMnO3

系统研究了xLa_5/8Ca_3/8MnO₃:ErMnO₃:(1-x)ErMnO₃(x=0、0.2、0.4、0.5、0.6、0.8、1)铁电铁磁复合材料的晶体结构和低温下的电磁输运性质.X光衍射结果表明金属铁磁相La_5/8Ca_3/8MnO₃和绝缘铁电相ErMnO₃由于晶体结构上的巨大差异几乎完全不相溶．电阻率随x的增大而降低,其导电特性可用经典的渗流理论来解释．当x>xc时,样品电阻特性由La_5/8Ca_3/8MnO₃主导,电阻温度曲线会出现金属绝缘体转变．磁性测试表明,由于xLa_5/8Ca_3/8MnO₃的掺入,复合材料的磁性相比单相ErMnO₃得到加强．从电磁性质综合分析认为这种复合材料是一种新的多铁性材料,相比单相多铁性材料ErMnO₃,它具有更强的磁性和更广的使用温度范围．     

Material dependence of spin transport modulated by magnetic barriers in semiconductor nano-wires

We present the properties of ballistic spin transport through magnetic barrier structures in semiconductor nano-wires. The Landauer's approach is adopted to calculation of the transmission probability and the conductance for various host material nano-wires which are different remarkably from each other in effective g-factors. A host material having small effective g-factor is quantized in the conductance and the spin-dependence is disappeared in it. Nevertheless this kind of behavior is broken for the host material having large effective g-factor and the spin-dependent splitting is shown.     

正常金属/绝缘层/s波超导隧道结中绝缘层对微分电导的影响

在正常金属／绝缘层／s波超导隧道结（NIS结）中，以方势垒描述绝缘层对准粒子输运的影 响，运用Bogoliubov_de Gennes（BdG）方程、Blonder_Tinkham_Klapwijk(BTK)理论，计算 了NIS隧道结中的准粒子输运系数和微分电导.研究表明,微分电导随绝缘层厚度的变化呈振 荡和衰减两种趋势，其振荡的周期和衰减的快慢均强烈地依赖于绝缘层的势垒值以及V=Δ ₀/e的偏压值，电导峰的高低及峰的位置与绝缘层厚度密切相关，显示了比δ势 描述更为丰富多彩的隧道谱. 关键词： NIS结 方势垒 微分电导     

Sizable band gap in organometallic topological insulator

Based on first principle calculation when Ceperley–Alder and Perdew–Burke–Ernzerh type exchange-correlation energy functional were adopted to LSDA and GGA calculation, electronic properties of organometallic honeycomb lattice as a two-dimensional topological insulator was calculated. In the presence of spin–orbit interaction bulk band gap of organometallic lattice with heavy metals such as Au, Hg, Pt and Tl atoms were investigated. Our results show that the organometallic topological insulator which is made of Mercury atom shows the wide bulk band gap of about ∼120 meV. Moreover, by fitting the conduction and valence bands to the band-structure which are produced by Density Functional Theory, spin–orbit interaction parameters were extracted. Based on calculated parameters, gapless edge states within bulk insulating gap are indeed found for finite width strip of two-dimensional organometallic topological insulators.     

原子簇La8-xBaxCuO6的原子磁矩和自旋极化的电子结构研究

利用MS-Xα方法研究了化合物La_2-yBa_yCuO₄的原子磁矩和自旋极化的电子结构.理论计算得到母相氧化物La₂CuO₄的Cu原子磁矩为0.37μ_B，与实验值0.48±0.15μ_B基本一致. 研究结果显示, 由于Ba原子对部分La的替代，使构成化合物的基本原子簇La_8-xBa_xCuO₆的 关键词： 电子结构 自旋极化 磁矩 态密度 超导电性     

Enhancement of spin polarization in asymmetrically coupled CdSe and CdZnMnSe quantum dots in ZnSe matrix

An asymmetrically coupled double quantum dot (QD) system consisting of adjacent CdSe and CdZnMnSe QD layers in a ZnSe matrix was investigated using polarization-selective magneto-photoluminescence (PL). Two well-resolved PL peaks are observed corresponding, respectively, to the CdSe and the CdZnMnSe QDs. The peaks exhibit significant change in the intensity and energy position when a magnetic field is applied. The enhancement of the degree of σ⁻ circular polarization emitted by the non-magnetic CdSe QDs is observed in the double layer system, as compared to that observed in CdSe QDs without the influence of neighboring CdZnMnSe QDs. This behavior was discussed in terms of antiferromagnetic interaction between carrier spins localized in pairs of CdSe and CdZnMnSe QDs that are electronically coupled.     

Depolarization of the photoluminescence and spin relaxation in n-doped GaAs

Optically oriented electron spin lifetime in n-doped gallium arsenide was measured via depolarization of the photoluminescence (PL) in a transverse magnetic field (Hanle effect). In order to measure the PL polarization, a time-resolved pump-probe experiment, where a pump pulse generates spin-polarized electrons and a probe pulse monitors their polarization, was employed. The PL polarization in dependences of the pump-probe delay, external magnetic field as well as of the sample temperature was studied. The PL polarization was found to decay exponentially with the pump-probe delay, from which the spin lifetime of the electrons was measured. The measured value was found to depend on the strength of the magnetic field and sample temperature.