乙烯在Ru( )表面价带电子特性研究

在200K以下乙烯（C2H4）可以在Ru（1010^-）表面上以分子状态稳定吸附,200K以上乙烯发生了脱氢分解反应生成乙炔（C2H2）。乙烯分解生成乙炔后,σCC和σCH 分子轨道能级向高结合 能方向分别移动了0.5和1.1eV。偏振角分辨紫外光电子谱（ARUPS）结果表明：在Ru(10106-)表面上,乙烯和脱氢反应后生成的乙炔分子在C－C键轴都不平行 于表面,而是沿表面<0001>晶向倾斜。     

Na在Si(111)表面(3×1)有序吸附结构的光电子能谱研究

分析了Si(111)7×7表面上Na(3×1)有序吸附的同步辐射光电子能谱的变化,并与Paggel等的扫描隧道显微镜和光电子能谱比较,得出Na吸附在类余留原子(rest atom)的位置,支持Mnch的模型,与室温下无序吸附Na的光电子能谱相比较,得出Na-Si界面肖特基势垒形成是由Na与Si原子之间的相互作用决定,与表面构形是否有序关系不大,势垒高度与MIGS理论预计值相符。     

Fe/ZnO (0001)体系界面相互作用中薄膜厚度效应的光电子能谱研究

利用同步辐射光电子能谱(SRPES)和X射线光电子能谱(XPS)技术,系统研究了室温下Fe/ZnO界面形成过程中Fe薄膜与氧结尾的ZnO(000 1 )衬底之间的相互作用,结果显示初始沉积的Fe明显被表面氧氧化为Fe²⁺离子,在Fe覆盖度为0—3 nm的范围内,分别观察到与界面电荷传输、化学反应以及薄膜磁性相关的三个有意义的临界厚度,这一结果将有助于基于Fe/ZnO界面的相关器件的设计和研发. 关键词： Fe/ZnO 界面作用 同步辐射光电子能谱 X射线光电子能谱     

三萘基膦在Ag(110)面上沉积的紫外光电子能谱研究

利用紫外光电子能谱（UPS）对新型有机半导体三萘基膦（TNP）在金属Ag(110)表面上沉积生长及其电子性质等进行了研究.三萘基膦的价带谱峰分别位于费米能级以下38，63，93和110 eV处，其中，价带顶 (HOS)位于费米能级以下约25 eV处.清洁Ag(110)表面的功函数为43 eV.随着三萘基膦在Ag(110)表面的沉积，功函数减小到38 eV，并达到饱和.根据UPS的测量结果，给出了三萘基膦/Ag(110)界面的能带结构，且三萘基膦与衬底Ag之间呈弱相互作用行为. 关键词： 紫外光电子谱 价电子结构 功函数     

Fe/ZnO(0001)界面的同步辐射光电子能谱研究

利用同步辐射光电子能谱研究了Fe/ZnO生长模式、界面化学反应和电子结构.结果表明，Fe在ZnO(0001)表面以类SK模式生长(单层加岛状生长).当沉积约2?的Fe后，生长模式开始从二维层状生长转变成混合模式生长.界面价带谱和Fe3p芯能级谱的分析表明，在低覆盖度下，约有一个原子层(约1.5?)的Fe被ZnO(0001)面的外层O原子氧化，随着沉积厚度的增加，金属态Fe的信号逐渐增强.当吸附了5.1?的Fe时，出现了较强的金属Fe的Fermi边，说明出现了Fe的金属态.此外，在Fe原子吸附过程中，样品功函数在Fe厚度为0.2?时达到最小值4.5eV，偶极层形成后逐渐稳定在4.9eV.     

Fe/ZnO(0001-)界面的同步辐射光电子能谱研究

利用同步辐射光电子能谱研究了Fe／ZnO生长模式、界面化学反应和电子结构．结果表明，Fe在ZnO（0001^-）表面以类SK模式生长（单层加岛状生长）．当沉积约2A的Fe后，生长模式开始从二维层状生长转变成混合模式生长．界面价带谱和Fe3p芯能级谱的分析表明，在低覆盖度下，约有一个原子层（约1．5A）的Fe被ZnO（0001）面的外层0原子氧化，随着沉积厚度的增加，金属态Fe的信号逐渐增强．当吸附了5．1A的Fe时，出现了较强的金属Fe的Fermi边，说明出现了Fe的金属态．此外，在Fe原子吸附过程中，样品功函数在Fe厚度为0．2A时达到最小值4．5．eV，偶极层形成后逐渐稳定在4．9eV．     

Mn/GaAs(100)界面电子结构的同步辐射光电子能谱研究

利用同步辐射光电子能谱,研究了室温下在GaAs(100)表面上淀积的Mn的超薄膜的电子结构.实验发现,在θ<2ML的覆盖度下,Mn3d电子的能量态密度分布与体金属α-Mn差别很大当θ>2ML之后,便逐步接近α-Mn的体电子结构.这一结果可由Mn3d电子的自旋向上带和自旋向下带的交换分裂很好地解释.由此推断,当覆盖度θ<2ML时,在GaAs(100)表面上淀积的Mn的超薄膜具有磁有序结构 关键词：     

6H-SiC(0001)-6√3×6√3R30°重构表面的同步辐射角分辨光电子能谱研究

利用同步辐射角分辨光电子能谱(SRARPES)对6H-SiC(0001)-6√3×63√R30°重构表面的电子结构和表面态进行了研究.通过鉴别价带谱中来自于体态的信息,可以推断出重构表面的费米能级位于体态价带顶之上(2.1±0.1)eV处.实验测出的体能带结构与理论计算的结果较为符合.在重构表面上发现三个表面态,分别位于结合能-0.48 eV(S0),-1.62 eV(S1)和-4.93 eV(S2处.沿着表面布里渊区的高对称线ΓKM方向,测量了相关表面态的能带色散,只有表面态S0(-0.48 eV)表现出了所希望的6√3×6√3 R30°重构周期性.根据实验现象,可以认为,表面态S0应归结于重构表面的C-C悬键,而表面态S1则由重构表面未钝化的C悬键所导致.     

用角分辨光电子能谱研究Co/Cu(111)外延超薄膜的电子结构

利用同步辐射角分辨光电子能谱研究了分子束外延生长的Co/Cu(111)超薄膜电子结构的变化.Cu(111)的位于表面布里渊区Γ点的表面态在覆盖度为两单层时仍然可以分辨,说明薄膜生长模式不是二维层状生长.在一单层和二单层时,动量沿Cu体布里渊区ΓΛL方向变化,Co的最明显的峰包有能量色散.在覆盖度从一单层到两单层的变化过程中,固定光子能量测谱发现Co的能带的能量调整.实验测得的Co膜的电子结构与已有理论计算的结果对比,初步确定Co原子在生长初期阶段为两层岛生长,而且在一单层时已经具有铁磁性.     

酞菁铜与MoS_2(0001)范德瓦耳斯异质结研究

利用光电子能谱、原子力显微镜以及低能电子衍射等表面研究手段系统研究了真空沉积生长的酞菁铜薄膜与衬底MoS2(0001)之间的范德瓦耳斯异质结界面电子结构和几何结构.角分辨光电子能谱清楚地再现了MoS2(0001)衬底在Γ点附近的能带结构.低能电子衍射结果表明,CuPc薄膜在MoS2(0001)表面沿着衬底表面[11ˉ20],[1ˉ210]和[ˉ2110]三个晶向有序生长,反映了衬底对CuPc的影响.原子力显微镜结果表明,CuPc在MoS2衬底上遵循层状-岛状生长模式:在低生长厚度下(单层薄膜厚度约为0.3 nm),CuPc分子平面平行于MoS2表面上形成均匀连续的薄膜;在较高的沉积厚度下,CuPc沿衬底晶向形成棒状晶粒,表现出明显的各向异性.光电子能谱显示界面偶极层为0.07 eV,而且能谱在膜厚1.2 nm饱和,揭示了酞菁铜与MoS2(0001)范德瓦耳斯异质结的能级结构.     

A molecular beam study of the adsorption dynamics of CO on Ru(0001), Cu(111) and a pseudomorphic Cu monolayer on Ru(0001)

We have investigated the sticking coefficient of CO on Ru(0001), a pseudomorphic Cu monolayer on Ru(0001), and a fully relaxed Cu(111) multilayer as function of kinetic energy, surface coverage, and surface temperature. At a low kinetic energy of 0.09 eV, the initial sticking coefficients, S₀, on these surfaces are determined to be 0.92, 0.96 and 0.87, respectively. In all cases, a decrease of S₀ with increasing beam energy was observed, yielding values of 0.58, 0.14 and 0.07, respectively, at a kinetic energy of 2.0 eV. For all three surfaces the coverage dependent sticking coefficients, S(Θ), display very characteristic behavior at low kinetic energies: S(Θ) remains more or less constant up to coverages close to saturation, indicative of precursor adsorption kinetics. However, characteristic minima at intermediate coverages are observed, which are correlated to the formation of well ordered adsorbate phases. For high kinetic energies we observe a transition towards a linear decrease of S(Θ) for Ru(0001). In contrast, for the pseudomorphic Cu monolayer and for Cu(111) we find an increase in the sticking coefficients at low coverages, followed by a decrease close to saturation. This behavior is attributed to adsorbate assisted sticking, that is, to a higher sticking coefficient on adsorbate covered regions than on the bare surface. The comparison between the pseudomorphic monolayer and Cu(111) reveals that the CO bond strength to the former is larger by 40%. The initial sticking coefficients for both surfaces are very similar at low kinetic energies; at high kinetic energies, S₀ for the pseudomorphic Cu monolayer is, however, larger by a factor of two.     

Band structure of Au layers on the Ru(0001) and graphene/Ru(0001) surfaces

The electronic structures of Au monolayers on the Ru(0001) and graphene-coated Ru(0001) surfaces have been calculated by DFT method using the supercell (repeated-slab) approach. The local densities of states (LDOS) and band structures of the monolayer and bilayer Au films adsorbed on the graphene/Ru(0001) and those of free hexagonal Au layers are found to be very similar. This result indicates that the monolayer graphene almost completely screens the Au layers from the Ru(0001) substrate surface, so that electronic properties of Au films adsorbed on graphene are determined predominantly by the electronic structure of the Au adlayers, essentially independent on the electronic structure of the substrate surface.     

CO吸附对乙醛在Co(0001)表面降解和多聚的影响

The adsorption and reaction of acetaldehyde on the clean and CO pre-covered Ru(0001) surfaces have been investigated using temperature programmed desorption method. On the clean Ru(0001) surface, the decomposition of acetaldehyde is the main reaction channel, with little polymerization occurring. However, on the CO pre-covered Ru(0001) surface, the decomposition of acetaldehyde is inhibited considerably with increasing CO coverage. Whereas, the polymerization occurs efficiently, especially at high CO coverage (θ_CO>0.5 ML), which is strongly CO coverage dependent. Combined with previous studies, the well-ordered hexagonal structure of CO layer formed on the Ru(0001) surface at high CO coverage that matches the configuration of paraldehyde is likely to be the origin of this remarkable phenomenon.     

He II spectra of La,Ce and Yb: Novel features in the valence band region

He II photoelectron spectra of La, Ce and Yb show features which cannot be explained in terms of single electron excitations. It is proposed that these are due to formation of electron-hole paris. Communication No. 227.     

Formation of graphene on Ru（0001） surface

We report on the formation of a graphene monolayer on a Ru(0001) surface by annealing the Ru(0001) crystal. The samples are characterized by scanning tunnelling microscopy (STM) and Auger electron spectroscopy (AES). STM images show that the Moir\'{e} pattern is caused by the graphene layer mismatched with the underlying Ru(0001) surface and has an $N\times N$ superlattice. It is further found that the graphene monolayer on a Ru(0001) surface is very stable at high temperatures. Our results provide a simple and convenient method to produce a graphene monolayer on the Ru(0001) surface, which is used as a template for fabricating functional nanostructures needed in future nano devices and catalysis.     

Ge在Ru(0001)表面上生长及其性质研究

报道Ge在Ru(0001)表面上生长以及相互作用行为的扫描隧道显微镜（STM）和x射线光电子能谱（XPS）研究. STM的实验结果表明Ge在Ru(0001)表面的生长呈典型的Stranski_Krastanov生长模式，Ge的覆盖度小于单原子层时呈层状生长，而从第二层开始呈岛状生长. XPS测量显示衬底Ru(0001)与Ge的相互作用很弱. Ru(0001)表面的Ru 3d5/2和Ru 3d3/2芯态结合能分别处于2798和2840 eV. 随着Ge的生长，到Ge层的厚度为20个单原子层，衬底Ru 3d芯态结合能减小了约02 eV，而Ge 3d芯态结合能从Ge低覆盖度时的289 eV增加到了290 eV，其相对位移约为01 eV. 关键词： Ge Ru表面 生长 相互作用     

Adsorbate band dispersions for C on Ru(0001)

We have studied carbon-induced two-dimensional energy bands on Ru(0001) using angleresolved photoelectron spectroscopy and have compared them with ab initio calculations. We find a nearly parabolic band (bottom at E_F ?9.8 eV at k_∥ = 0, effective mass ～ 1.5 m_e) which we assign to the C 2p_z valence states of a graphitic carbon overlayer. Compared to graphite, these states are bound more tightly by 2.3 eV.