(Si)n/(Ge)n超晶格几何结构

本文用Keating模型计算了Si_1-xGe_x(x=0—1)作衬底、沿(100)方向生长的(Si)_n/(Ge)_n(n=1—6)应力超晶格的几何结构,并讨论了衬底对超晶格生长的影响,计算结果发现对于(Si)_n/(Ge)_n超晶格,用适当的Si_1-xGe_x作衬底有利于超晶格的生长。 关键词：     

不同剂量C离子注入Si单晶中Si1-xCx合金的形成及其特征

室温下在单晶Si中注入(0.6—1.5)%的C原子,利用高温退火固相外延了Si_1-xC_x合金,研究了不同注入剂量下Si_1-xC_x合金的形成及其特征.如果注入C原子的浓度小于0.6%,在850—950℃退火过程中,C原子容易与注入产生的损伤缺陷结合,难于形成Si_1-xC_x合金相.随注入C原子含量的增加,C原子几乎全部进入晶格位置形成Si_1-xC_{x 关键词： 1-x}C_x合金')" href="#">Si_1-xC_x合金 离子注入 固相外延     

预注入对Si1-xCx合金形成的影响

室温下在单晶Si中注入(0.6—1.5)at%的C原子,部分样品在C离子注入之前在其中注入²⁹Si⁺离子产生损伤,然后在相同条件下利用高温退火固相外延了Si_1-xC_x合金,研究了预注入对Si_1-xC_x合金形成的影响.如果注入C离子的剂量小于引起Si非晶化的剂量,在950℃退火过程中注入产生的损伤缺陷容易与C原子结合形成缺陷团簇,难于形成Si_1-xC关键词： 离子注入 固相外延 1-xC_x合金')" href="#">Si_1-xC_x合金     

应变Ge空穴有效质量的各向异性与各向同性

在利用k·p微扰理论获得应变Ge/Si_1-xGe_x价带E（k）-k关系的基础上,研究得到了（001）,（101）,（111）面应变Ge/Si_1-xGe_x沿不同晶向及各向同性的价带空穴有效质量.结果显示,应变Ge/Si_1-xGe_x沿各晶向的带边有效质量随应力增大而减小,且沿[010]晶向最小;子带空穴有效质量在应力较大时变化不明显,并且在数值上与带边空穴有效质量相差不大.最后利用各向同性有效质量与文献结果进行比对,验证了结果的正确性.     

TiN和Ti1-xSixNy薄膜的微观结构分析

使用x射线衍射(XRD)、x射线光电子谱(XPS)、高分辨透射电子显微镜(HRTEM)和原子力显微镜（AFM）多种观测手段分析了TiN薄膜和Ti_1-xSi_xN_y纳米复合薄膜的微观结构.实验分析证明Ti_1-xSi_xN_y薄膜是由直径为3—5nm的纳米晶TiN和非晶Si₃N₄相构成，并且Ti_1-xSi_{x关键词： 纳米复合薄膜 自由能 表面粗糙度 TiN 1-x}Si_xN_y')" href="#">Ti_1-xSi_xN_y     

Si1-xGex/Si异质结构中热应力对临界厚度的影响

系统分析了Si_1-xGe_x/Si外延生长中热应力对外延生长的影响．假设Si Ge的线膨胀系数是随Ge的组分线性变化的，由此计算出热应变和应变能密度．根据能量平衡原理，当失配应变能密度加热应变能密度等于位错能密度时，外延层达到临界厚度，在People的基础上得出了改进的临界厚度计算公式．理论计算值与People的实验值更相近． 关键词：     

MoxGe1-x,MoxSi1-x薄膜的非晶形成成份及超导转变温度

用直流吸气溅射法在液氮冷底板上分别制备了Mo_xGe_1-x,Mo_xSi_1-x的薄膜。其形成非晶的成份分别为Ge>22at%,Si>18at％。超导转变临界温度T_c在非晶状态下随着Ge,Si的含量增加而下降(约6—3K)。非晶Mo₇₇Ge₂₃膜的晶化温度为780℃,而非晶Mo₇₈Si₂₂膜的晶化温度为480℃。 关键词：     

用多步激发技术测定锶的(5p3/2ns)1及(5p3/2nd)3自电离谱

用分步激发方法及偏振光技术,测定了锶的(5p_3/2ns)₁(n=13-21)及(5p_3/2 nd)₃(n=13-24)各自电离谱,在低于5p_1/2电离限的(5p_3/2ns)₁态的实电子激发谱中,出现对应于(5p_1/2ns)₁及(5p_1/2nd)₁的畸变峰,畸变峰也出现于(5p_3/2nd)₃的实电子激发谱中。这说明(5p_jns)(5p_jnd)自电离系列间存在相互作用。 关键词：     

稀掺杂GaNxAs1－x(x≤0.03)薄膜的调制光谱研究

利用室温下压电调制反射光(PzR)谱技术系统测量了N掺杂浓度为0.0%—3%的分子束外延生长GaN_xAs_1-x薄膜，并对图谱中所观察的光学跃迁进行了指认.在GaN_0.005As_0.995和GaN_0.01As_0.99薄膜的PzR谱中观察到此前只在椭圆偏振谱中才看到的N掺杂相关能态E₁+Δ₁+Δ_N.当N掺杂浓度达到 关键词： 压电调制反射光谱(PzR) xAs_1-x薄膜')" href="#">GaN_xAs_1-x薄膜 分子束外延(MBE)     

带隙法测定SiGe/Si材料的应变状态

从固体模型理论的结果出发，计算了生长于Si（100）衬底上x值小于085的Si_1-xGe_x合金材料（能带结构为类Si结构）的间接带隙与应变的关系，结 果表明，应变的S iGe材料的带隙和完全弛豫状态下材料的带隙之差与应变呈线性关系.基于这一结果，提出了 用测量带隙来间接测定SiGe/Si应变状态的方法.用带隙法和x射线双晶衍射法测量了不同应 变状态下的SiGe/Si多量子阱材料的应变弛豫度，两者可以较好的符合，表明带隙法测量SiG e应变弛豫度是可行的. 关键词： SiGe合金 应变 带隙     

Neutron diffraction study of magnetic ordering in PrCu2Si2, PrCu2Ge2, PrFe2Ge2 and NdFe2Ge2

A neutron diffraction study of polycrystalline PrCu₂Si₂ [1], PrCu₂Ge₂ [2], PrFe₂Ge₂ [3] and NdFe₂Ge₂ [4] intermetallics carried out at liquid helium temperature shows the presence of a collinear antiferromagnetic order below T_N = 19 ± 1 K [1], T_N = 16 ± 1 K [2], T_N = 9 ± 1 K [3] and 13 ± 1 K [4]. Magnetic moment, parallel to the c-axis is localized on RE ions only. The magnetic structure of these compounds consists of ferromagnetic layers perpendicular to the c-axis coupled antiferromagnetically with sequence +-+- for PrCu₂Si₂ and PrCu₂Ge₂ and +--+ for PrFe₂Ge₂ and NdFe₂Ge₂. The RE moments amount close to the free ion values for Fe containing compounds but are smaller in those containing Cu suggesting a fairly strong influence of crystal field.     

应变Ge/Si1-xGex 价带色散模型

基于k·p微扰理论, 通过引入应变哈密顿量作为微扰, 建立了双轴应变Ge/Si_1-xGe_x价带色散关系模型. 模型适于任意晶向弛豫Si_1-xGe_x虚衬底上的应变Ge价带结构, 通过该模型可获得任意k方向应变Ge的价带结构和空穴有效质量. 模型的Matlab模拟结果显示, 应变Ge/Si_1-xGe_x价带带边空穴有效质量随Ge组分的增加而减小, 其各向异性比弛豫Ge更加显著. 本文研究成果对Si基应变Ge MOS器件及集成电路的沟道应力与晶向的设计有参考价值.     

Si/SiGe量子级联激光器的能带设计

详细论述Si/SiGe量子级联激光器的工作原理，通过对比找到一组合适的Si，Ge和SiGe合金的能带参数，进而应用6×6 k·p方法计算了不同阱宽、不同Ge组分Si/Si_1-xGe_x/Si量子阱价带量子化的空穴能级本征值及其色散关系，分析Si/Si_1-xGe_x/Si量子阱空穴态能级间距随阱宽和组分的变化规律，最后应用计算结果讨论了Si/SiGe量子级联激光器有源区的能带设计，有益于优化Si /SiGe量子级联激光器结构. 关键词： 硅锗材料 量子级联激光器 子带跃迁 k·p方法')" href="#">k·p方法     

能谷间相互作用对量子阱Ge0.3Si0.7/Si/Ge0.3Si0.7的电子能带结构的影响

采用建立在经验赝势理论基础上的推广k·p方法及电流密度算符技术，计算了生长在Ge_0.3Si_0.7（001）衬底上的量子阱Ge_0.3Si_0.7/Si/Ge_0.3Si_0.7的导带电子束缚能级．详细地研究了因能谷间相互作用而引起的能级分裂情况，同时也讨论了电子束缚能级在阱平面方向上的色散关系 关键词：     

Behaviour of electrical resistivity and elastic constants at the phase transition in Ge0.08Sn0.92Te

Electrical resistivity and ultrasonic wave velocity measurements made through the phase transition in Ge_0.08Sn_0.92Te crystals provide further evidence that the acoustic anomaly is due to interaction between the softening optic phonon mode and the acoustic modes at the zone centre.     

Dopant activation in Sb-implanted relaxed Si1−xGex alloy layers grown on compositionally graded buffers

Supersaturated solid solutions of substitutional, electrically active Sb have been obtained by ion implantation of relaxed epitaxial Si_1?xGe_x alloy layers grown on compositionally graded buffers. Substitutional and nonsubstitutional Sb fractions in relaxed Si_0.85Ge_0.15, Si_0.65Ge_0.35 and Si_0.50Ge_0.50 alloy layers implanted to a dose of 5×10¹⁵ Sb cm^?2 and annealed isothermally at temperatures ranging from 400 to 850°C have been studied by Rutherford backscattering/channeling, transmission electron microscopy and Hall-effect and sheet resistivity measurements. A supersaturated solution of Sb corresponding to a peak carrier concentration of 4×10²⁰ cm^?3 and an electrically active fraction of 40% of the implanted dose is observed by Hall measurements for the case of Si_0.85Ge_0.15 and Si_0.65Ge_0.35 alloys annealed at 550°C.     

势垒区δ掺杂量子阱Ge0.3Si0.7/Si/Ge0.3Si0.7的子带间跃迁光吸收系数

采用包络函数方法对生长在Ｇｅ_0.3Ｓｉ_0.7（００１）衬底上势垒区δ掺杂量子阱Ge_0.3Si_0.7/Si/Ge_0.3Si_0.7的电子能带结构及子带间光吸收特性进行了自洽的计算．对光吸收系数与量子阱的阱宽、δ掺杂位置及δ掺杂密度间的变化关系进行了讨论．最后对由高浓度的二维电子气的退极化效应所引起的频率位移进行了研究 关键词：     

高能电子衍射研究H钝化偏角Si衬底上Si,GexSi1-x的分子束外延生长模式

用高能电子衍射(RHEED)研究H钝化偏角Si衬底上Si,Ge_xSi_1-x材料的分子束外延(MBE)生长模式,发现经低温处理的H钝化Si衬底上要经过10nm左右的Si生长才能获得比较平整的表面.Si,Ge_xSi_1-x外延时的稳定表面均以双原子台阶为主,双原子台阶与单原子台阶并存的结构.Si双原子台阶上的Si二聚体列(dimerrow)取向垂直于台阶边缘,而Ge_xSi_1-x双原 关键词：     

Enhanced growth of low-resistivity cobalt silicide by using a Co/Au/Co trilayer film on Si0.8Ge0.2 virtual substrate

Formation of Co germanosilicides on Si_0.8Ge_0.2 virtual substrates with a Co/Au/Co sandwich thin film after different heat treatments has been investigated. The sequence of phase formation is the same as the reaction of blanket Co thin film with (001)Si. The presence of thin interposing Au layers was found to significantly enhance the formation of low-resistivity CoSi₂ on (001)Si_0.8Ge_0.2 substrates. The formation temperature of CoSi₂ phase in the Co/Au/Co/(001)Si_0.8Ge_0.2 samples was lowered by about 200 °C compared to that of Co/(001)Si_0.8Ge_0.2 samples. From TEM and EDS analysis, some of Au atoms were found to diffuse from the original interface position to disperse within the CoSi₂ layers during silicidation reactions. The mechanisms for the enhanced formation of CoSi₂ in the Co/Au/Co/Si_0.8Ge_0.2 system were explained in the context of classical nucleation theory.     

Magnetic properties of UT2Si2 and UT2Ge2 (T = Co,Ni, Cu) intermetallic systems

Neutron diffraction and magnetization measurements indicate that, at low temperatures, long-range magnetic order is present in UCO₂Si₂, UNi₂Si₂, UCu₂Si₂, UNi₂Ge₂, and UCo₂Ge₂. UCo₂Si₂ and UNi₂Ge₂ are simple collinear antiferromagnets of +-+- type, UCu₂Si₂ a simple collinear ferromagnet. In UNi₂Si₂, a magnetic phase transition from a LSW type structure to collinear antiferromagnetism of +-+- type was found, while in UCu₂Ge₂, the antiferromagnetic structure of ++-- transforms into collinear ferromagnetism. Crystal structure and magnetic parameters are given. No magnetic moment on transition metal ions was found within the accuracy of a powder neutron diffraction experiment. The stability of particular magnetic ordering schemes is discussed in terms of an isotropic RKKY mechanism.