国产氩离子枪的研发

氩离子枪主要由离子源、加速电极、聚焦透镜和控制电源构成,可以产生并发射氩离子束,用于样品的表面清洁处理、表面刻蚀或深度分析,是表面分析和纳米科技装置中的重要构成之一。文章介绍国产氩离子枪的设计原理和测试结果,氩离子的加速电压可达2 kV,在工作距离150 mm和氩气分压为2.0×10-3Pa的情况下,可产生4.5mA的氩离子束流,束斑的直径在10—20 mm之间可调。     

高电离态离子束箔光谱学研究

利用束箔技术研究电重离子加速器提供的47MeV能量的氖离子和94MeV能量的氩离子，分别和不同材料，不同厚度碳箔（39μg/cm^2）和铝箔（3.4mg/cm^2）相互作用，产生高电离态的氖和氩离子，并测量了这些离子的激发江谱和某些能级寿命。     

129Xe30+轰击Ni表面激发靶原子偶极跃迁和禁戒 (M1和E2)跃迁的特征光谱线

报道了用高电荷态离子129Xe30+(150keV) 轰击金属Ni表面，激发的200—1000nm NiⅠ和NiⅡ的特征光谱线的实验结果.实验结果表明：用电荷态足够高的离子作光谱 激发源，无需很强的束流强度（nA量级），便可有效地产生原子和离子的复杂组态间跃迁所 形成的可见光波段的特征谱线，特别是NiⅠ和NiⅡ偶极禁戒的电四极跃迁E2和磁偶极跃迁M1 的特征光谱线.通过分析发现，在禁戒跃迁的谱线中，有些是电子组态相同而原子态不同的 偶极禁戒跃迁光谱线而且NiⅡ的684.84nm谱线较强. 关键词： 光谱 禁戒跃迁 电子组态 高电荷态离子     

射频阱中碳原子族离子同N2的化学反应

利用激光溅方法产生并在射频离子阱中的囚禁了碳原子的簇离子，进而利用离子阱质量选择存储和离子存储时间长等特点，研究了碳原子族离子同Ｎ２的化学反应，分析了Ｎ２分子在离子阱中活化的条件和过程，根据得到的大反应产物并结合化学反应热效应的计算。分析了碳原子簇离子同Ｎ２反应的主要通道，测得了相应通道的反应物与反应产物的分支比，推算了碳原子簇离子同Ｎ２反应的速率常数，分析了碳原子簇离子同Ｎ２的反应活性力簇尺寸奇     

类Ne碘离子的3d—2p跃迁及其伴线结构的理论研究

在对类Ｎｅ，类Ｎａ，类Ｍｇ和类Ａｌ碘离子的３ｄ－２ｐ跃迁波长和跃迁几率详细计算的基础上，考虑了各个谱线的加宽和谱线间的重迭效应。在局部热动平衡近似和高温条件下，模拟了各离化态离子共同存在时产生的光谱结构，给出了具有带状分布特征的伴线峰的中心波长和半最大全宽度。讨论了这种光谱在等离子体状态诊断方面的应用。     

毛细管放电条件下类氖序列原子参量计算与分析

利用多组态求解相对论性的Hartree-Fock-Roothan方程(HFR)方法计算了类氖离子(Z=13～27)2s^22p^5—2s^22p^53s能级之间跃迁的原子参量,包括类氖氩激光系统的能级,振子强度,自发辐射衰变速率,能级寿命,电子碰撞激发截面及电子碰撞激发速率系数等。以类氖氩离子为例,分析了等离子体内46．9nm激光跃迁的粒子数反转的形成及谱线放大过程,讨论了其它几条谱线产生增益的可能性,分析了激光线振子强度随核电荷数的变化规律。根据获得的原子参量,计算了利用毛细管放电产生类氖氩和类氖氪x射线激光的放电参量,其中类氖氩毛细管放电的初始压强的范围为30~90Pa,放电电流峰值为10～50kA。理论计算结果为类氖氩x光激光实验分析,深入研究等离子体反转动力学,激光增益的估算及理论方案设计等提供了基本数据。     

YBCO中空穴分布及其压力效应的离子模型研究

在离子模型下通过改进总能计算，探讨了ＹＢａ２Ｃｕ４Ｏ８超导体中可能的空穴分布，结果表明在顶角氧上有较多的空穴，与光谱实验表明空穴具有氧的特征相符。类似地我们计算了在有压强的情况下的空穴分布，通过与零压的情形比较，发现空穴的迁移并不明显。     

类Ne碘离子的3d－2p跃迁及其伴线结构的理论研究

在对类Ｎｅ、类Ｎａ、类Ｍｇ和类Ａｌ碘离子的３ｄ－２ｐ跃迁波长和跃迁几率详细计算的基础上，考虑了各个谱线的加宽和谱线间的重迭效应。在局部热动平衡近似和高温条件下，模拟了各离化态离子共同存在时产生的光谱结构，给出了具有带状分布特征的伴线峰的中心波长和半最大全宽度。讨论了这种光谱在等离子体状态诊断方面的应用。     

碰撞电离产生Au L3空穴态定向行为的研究

采用一种简单的实验方法测定低能区几种离子与Ａｕ碰撞产生Ａｕ的Ｌ₃空穴态的定向度，及定向度的入射离子能量相关性；同时在平面波玻恩近似理论基础上加上库仑偏转效应的校正进行了理论计算，改善了实验点与平面波玻恩近似理论计算的符合程度，讨论了有关空穴态定向行为。 关键词：     

类Ne La离子的3—2跃迁及其伴线结构的理论研究

在对类Ne La离子及其近邻的类Na、类Mg和类Al离子的n=3—n=2跃迁的波长和跃迁几率详细计算的基础上,考虑了等离于体中单个谱线的展宽和谱线之间的重叠.在高温条件和局部热动平衡近似下,得到了这些电离态离子同时存在时产生的具有带状分布特征的谱带的中心波长和半最大全宽度.解释了已有的实验结果,并预言了存在于更长波段上的谱带的结构 关键词：     

Vacancy defects induced in sintered polished UO2 disks by helium implantation

Vacancy defects have been investigated in sintered polished and annealed uranium oxide disks. Slow positron beam coupled with Doppler broadening spectrometer was used to probe the track region of 1 MeV ³He ions implanted in uranium dioxide (UO₂) disks. The low and high momentum annihilation fractions, S and W, respectively, were measured in the first micrometer near surface region of the disks as a function of positron energy. The S and W values indicate that the 1 MeV He ions induce vacancy defects in the track region of their range. The vacancy defect depth distribution is heterogeneous. The positron trapping at these vacancy defects increases with the depth and with the implantation fluence indicating an increase of the vacancy defect concentration. The nature of the induced vacancy defects does not change with the fluence.     

The influence of H2/(H2 + Ar) ratio on microstructure and optoelectronic properties of microcrystalline silicon films deposited by plasma-enhanced CVD

Hydrogenated microcrystalline silicon films were deposited by glow discharge decomposition of SiH₄ diluted in mixed gas of Ar and H₂. By investigating the dependence of the film crystallinity on the flow rates of Ar and H₂, we showed that the addition of Ar in diluted gas markedly improves the crystallinity due to an enhanced dissociation of SiH₄. The infrared-absorption spectrum reveals that the fraction of SiH bonding increases with increasing the rate ratio of H₂/(H₂ + Ar). The surface roughness of the films increases with increasing the flow rate ratio of H₂/(H₂ + Ar), which is attributed to the decrease of massive bombardment of Ar ions in the plasma. Refractive index and absorption coefficient of the films were obtained by simulating the optical transmission spectra using a modified envelope method. Electrical measurements of the films show that the dark conductivity increases and the activation energy decreases with the ratio of H₂/(H₂ + Ar). A reasonable explanation is presented for the dependence of the microstructure and optoelectronic properties on the flow rate ratio of H₂/(H₂ + Ar).     

Ion beam sputter deposition of TiO<Subscript>2</Subscript> films using oxygen ions

TiO₂ thin films were grown by ion beam sputter deposition (IBSD) using oxygen ions, with the ion energy and geometrical parameters (ion incidence angle, polar emission angle, and scattering angle) being varied systematically. Metallic Ti and ceramic TiO₂ served as target materials. The thin films were characterized concerning thickness, growth rate, surface topography, structural properties, mass density, and optical properties. It was found that the scattering geometry has the main impact on the film properties. Target material, ion energy, and ion incidence angle have only a marginal influence. Former studies on reactive IBSD of TiO₂ using Ar and Xe ions reported equivalent patterns. Nevertheless, the respective ion species distinctively affects the film properties. For instance, mass density and the refractive index of the TiO₂ thin films are remarkably lower for sputtering with oxygen ions than for sputtering with Ar or Xe ions. The variations in the thin film properties are tentatively attributed to the angular and the energy distribution of the film-forming particles, especially, to those of the backscattered primary particles.     

The role of oxygen vacancy in fluorine-doped SnO2 films

The fluorine-doped tin oxide films (FTO) were prepared with SnCl₂ and SnCl₄ precursors using the spray pyrolysis method. The vibrational feature of oxygen vacancy in FTIR has been identified. The oxygen vacancy plays a role of donor in FTO films, although it becomes inconspicuous with an increase in fluorine concentration in the solution. The substitution of fluorine for oxygen has also been confirmed by FTIR spectrum, and it further indicates the production of fluorine doping is α-SnF₂. The reflectivity shows a close relation with the carrier concentration, suggested by the Drude theory. The discussion of scattering mechanism in FTO films suggests that impurity ions are the main scattering centers for free carriers.     

A threshold of Vo/Vo to room temperature ferromagnetism of hydrogenated Mn doped ZnO nanoparticles

Hydrogenated Mn doped Zn_1−xMn_xO (x = 0.03, 0.04, 0.08) nanoparticles were prepared by co-precipitation method. With the increase of Mn ions concentration, the magnetization of the hydrogenated Zn_1−xMn_xO increased. Photoluminescence spectra of samples annealed in Ar and H₂ respectively were performed and the visible bands were fitted with Gaussian analysis. It is concluded that the sharp magnetization enhancement could be attributed to the long-rang interaction between bound-magnetic-polarons led by the singly charged oxygen vacancy (Vo⁺).     

Local structure analysis of YSZ by Y-89 MAS-NMR

The local coordination structure around Yttrium ions in yttria stabilized zirconia (YSZ) has been investigated by ⁸⁹Y MAS-NMR. The NMR spectrum showed multiple peaks corresponding to yttrium ions in different coordination numbers. The compositional dependence of spectra was observed. Yttrium ions of different oxygen coordination number were quantified. The oxygen vacancy concentration around the cations was determined. It was found that the vacancies were distributed around Zirconium ions in lower Y₂O₃ concentrations, and the vacancy concentration located to Yttrium began increasing at concentrations above 10 mol% Y₂O₃. The local structure change was able to be directly observed by ⁸⁹Y NMR measurements.     

Effects of O2/Ar ratio and annealing temperature on electrical properties of Ta2O5 film prepared by magnetron sputtering

The effects of the oxygen-argon ratio on electric properties of Ta2O5 film prepared by radio-frequency magnetron sputtering were investigated.The Ta2O5 partially transforms from the amorphous phase into the crystal phase when annealing temperatures are 800℃ or higher.The lattice constant of Ta2O5 decreases with the increase of the O2/Ar ratio,which indicates that oxygen gas in the working gas mixture contributes to reducing the density of oxygen vacancies during the deposition process.For the films deposited in working gas mixtures with different O2/Ar ratios and subsequently annealed at 700℃,the effective dielectric constant is increased from 14.7 to 18.4 with the increase of the O2/Ar ratio from 0 to 1.Considering the presence of an SiO2 layer between the film and the silicon substrate,the optimal dielectric constant of Ta2O5 film was estimated to be 31.Oxygen gas in the working gas mixture contributes to reducing the density of oxygen vacancies,and the oxygen vacancy density and leakage current of Ta2O5 film both decrease with the increase of the O2/Ar ratio.The leakage current decreases after annealing treatment and it is minimized at 700℃.However,when the annealing temperature is 800℃ or higher,it increases slightly,which results from the partially crystallized Ta2O5 layer containing defects such as grain boundaries and vacancies.     

Electron-transfer-mediated decay and interatomic Coulombic decay from the triply ionized states in argon dimers

We report the first observation of electron-transfer-mediated decay (ETMD) and interatomic Coulombic decay (ICD) from the triply charged states with an inner-valence vacancy, using the Ar dimer as an example. These ETMD and ICD processes, which lead to fragmentation of Ar(3+)-Ar into Ar(2+)-Ar(2+) and Ar(3+)-Ar+, respectively, are unambiguously identified by electron-ion-ion coincidence spectroscopy in which the kinetic energy of the ETMD or ICD electron and the kinetic energy release between the two fragment ions are measured in coincidence.     

High-density plasma etching of indium-zinc oxide films in Ar/Cl2 and Ar/CH4/H2 chemistries

The dry etching characteristics of transparent and conductive indium-zinc oxide (IZO) films have been investigated using an inductively coupled high-density plasma. While the Cl₂-based plasma mixture showed little enhancement over physical sputtering in a pure argon atmosphere, the CH₄/H₂/Ar chemistry produced an increase of the IZO etch rate. On the other hand, the surface morphology of IZO films after etching in Ar and Ar/Cl₂ discharges is smooth, whereas that after etching in CH₄/H₂/Ar presents particle-like features resulting from the preferential desorption of In- and O-containing products. Etching in CH₄/H₂/Ar also produces formation of a Zn-rich surface layer, whose thickness (∼40 nm) is well-above the expected range of incident ions in the material (∼1 nm). Such alteration of the IZO layer after etching in CH₄/H₂/Ar plasmas is expected to have a significant impact on the transparent electrode properties in optoelectronic device fabrication.     

Defect cluster formation in M2O3-doped CeO2

Atomistic simulation calculations based on energy minimisation techniques have been used to study the energetics associated with M₂O₃ solution in CeO₂. Results show that the binding energy of an oxygen vacancy to one or two substitutional cations is a strong function of dopant cation radius; small dopant ions prefer to occupy first neighbour sites, large dopant ions prefer second neighbour sites. The crossover occurs at approximately Gd³⁺, which also exhibits the smallest binding energy. These results are used to predict lattice parameter as a function of defect concentration and comparison is made to experimental values.