钽掺杂二氧化钛薄膜的光电性能研究

采用脉冲激光沉积法 (PLD), 以石英玻璃为衬底制备了钽掺杂TiO₂薄膜并研究了薄膜样品的光电性质. 沉积氧气分气压从0.3 Pa变化到0.7 Pa时薄膜样品的帯隙变化范围是3.26 eV到3.49 eV. 通过测量电阻率随温度的变化关系确定了薄膜内部的主要导电机理. 在150 K到210 K温度范围内, 热激发导电机理是主要的导电机理; 而在10 K到150 K范围内; 电导率随温度的变化复合Mott的多级变程跳跃模型 (VRH); 在210 K到300 K范围内, 电阻率和exp(b/T)^1/2呈正比关系. 关键词： 2')" href="#">Ta掺杂TiO₂ 脉冲激光沉积法 薄膜 导电机理     

A3C60超导体的研究

 1991年5月,Bell实验室的A.F.Hebard等人首次在掺钾的C₆₀中观察到高达18K的超导电性.于是,这项研究结果在全世界掀起广泛的研究热潮,成为近年高温超导研究领域中又一热点.本文扼要介绍C₆₀掺杂实验的物性测量结果,引起C₆₀超导的几种可能机制及对C₆₀掺杂研究的意义.一、A_xC₆₀的掺杂实验及物性测量结果Hebard等人发现掺钾的C₆₀高达18K的超导电性是在9GHz频率下,用微波损耗测量样品的电阻率随温度的变化时观察到的.当样品冷却到约20K时,电阻率略有增加,后又降低,直到5K时电阻率降为零.超导转变宽度为4.6K,4K时临界电流密度为40A/cm².用SQUID磁强计测量证明了它的超导转变为18K.     

织构C60薄膜的生长与光致发光特性

用Hot Wal方法，在氟金云母单晶上生长出了（111）织构的C₆₀薄膜．用X射线衍射、Raman散射、扫描电子显微镜和原子力显微镜研究了织构C₆₀薄膜的结晶质量和结构特性．测量了织构C₆₀薄膜在室温300K和低温77K的光致发光光谱．对所得结果进行了分析与讨论 关键词：     

C60薄膜的离子注入损伤研究

在200 keV重离子加速器上，用120—360 keV的H,N,Ar和Mo离子注入C₆₀薄膜．对注入后薄膜的拉曼谱进行了分析．结果表明，不同离子注入C₆₀薄膜后，C₆₀的1469 cm^-1特征峰随注入剂量的增加均呈指数式下降，同时在1300—1700 cm^-1范围出现非晶碳峰，并逐渐增强，最终完全非晶化．而且1469 cm^-1拉曼峰的强度及C₆₀薄膜完全非晶化所对应的剂量与注入离子的种类和能量有关．进一步的分析表明，C₆₀分子的损伤主要是由注入离子的核能量转移所造成，与电子能量转移无关．H离子注入C₆₀薄膜后，1469 cm^-1处特征拉曼峰向短波方向非对称展宽，这可能是注入的H离子通过电子能量转移使C₆₀分子发生聚合的结果. 关键词：     

掺杂C60的SiO2气凝胶的制备及荧光特性研究

利用“化学掺杂”方法，制备掺杂C₆₀-SiO₂气凝胶，对掺杂C₆₀-SiO₂气凝胶的红外吸收光谱、飞行时间质谱的测试表明C₆₀分子被成功地掺入SiO₂气凝胶中．室温条件下，在Ar⁺激光（488nm）激发下，观察到掺杂C₆₀-SiO₂气凝胶有很强的可见发光现象，发光峰位较纯C₆₀发光明显蓝移 关键词：     

K3Ba3C60在不同温度下的Raman光谱研究

研究了K₃Ba₃C₆₀在不同温度下的Raman光谱.发现Raman光谱随温度的变化发生有规律的变化.随着温度的降低,所有模的线宽和强度的变化情况与纯的C₆₀的情况明显不同.径向Ag(2)模的频率在20K到室温之间有一个反常大的向高频漂移(9cm^-1),这表明在C₆₀分子和掺杂离子之间存在着轨道杂化.另外Raman光谱中Ag(1)模两个分量的相对强度随着温度的降低发生有规律的变化. 关键词： 高频漂移 轨道杂化     

C60分子在GaAs(001)表面的外延生长的扫描隧道显微镜研究

利用扫描隧道显微镜（STM）系统地研究了C₆₀薄膜在GaAs（001）表面的异质外延生长．在GaAs（001）2×4-β相表面，观察到C₆₀薄膜以非密排面进行生长，并在生长中有结构相变产生．实验数据表明，薄膜下层面心立方（fcc）的晶格常数比C₆₀晶体的晶格常数要大13%；而薄膜的表层结构则展示了非理想的六角密堆（hcp）结构，其表面为hcp（1100）面，生长过程是非理想的层状生长模式．在GaAs（001）-c（4×4）衬底上，C₆₀薄膜的表面仍然是fcc（111）面，其结构参数与C₆₀晶体一致，但C₆₀薄膜采用了三维模式进行生长 关键词：     

La0.82Te0.18MnO3薄膜的输运特性和光诱导效应

用脉冲激光沉积法制备了非金属Te掺杂的钙钛矿锰氧化物La_0.82Te_0.18MnO₃单晶薄膜.该薄膜从83 K升温至373 K过程中发生金属-绝缘体相变，转变点温度为283 K.其电阻率在T<T_MI时符合电子-电子、电子-磁振子散射公式；在T>T_MI时为小极化子输运.薄膜在低温段连续激光(波长为532 nm，40 mW)作用下电阻率显著增大，电阻变化率在253 K达到最大值51.1%,该变化率远大于相同条件下的空穴掺杂材料；在高温段产生了较小的光电导，电阻变化率小于10%.这些现象主要与激光激励下自旋系统和小极化子的变化有关.La_0.82Te_0.18MnO₃薄膜在激光诱导下具有明显的与自旋相关的弛豫现象.激光开始作用时薄膜电阻率随时间的变化符合指数关系. 关键词： 0.82Te_0.18MnO₃薄膜')" href="#">La_0.82Te_0.18MnO₃薄膜 光诱导 输运特性 电子掺杂     

聚双(对甲苯磺酸)-2,4-己二炔-1,6-二醇酯(PTS)的热学性质

应用光声效应研究了聚双(对甲苯磺酸)-2,4-己二炔-1,6-二醇酯(PTS)在175—225K范围内的热学性质随温度的变化关系。发现比热C₃和热导K的积C₃·K在200K附近有一尖锐的峰,第一次由热学性质确定该处存在一个二阶相变。同时通过实验结果分析得到热导K在该温区内存在与温度成正比的反常行为,并对此作了分析。 关键词：     

La0.9Sr0.1MnO3薄膜中电流效应研究

用直流磁控溅射法在(100)LaAlO₃衬底上制备了La_0.9Sr_0.1MnO₃薄膜.经退火处理后薄膜的原子力显微镜形貌观测和X射线衍射分析显示具有比较好的质量.电阻率-温度关系表明La_0.9Sr_0.1MnO₃薄膜在281 K处发生金属绝缘体转变.电流在0.01—4 mA范围内，薄膜的峰值电阻率随电流增大而减小，在4 mA下获得了30.5%的峰值电阻率变 关键词： 掺杂锰氧化合物 0.9Sr_0.1MnO₃薄膜')" href="#">La_0.9Sr_0.1MnO₃薄膜 电流诱导效应 相分离理论     

Optical and electrical properties of C60Tex films

The structure, composition, and electrical and optical properties of thin tellurium-intercalated fullerene films C₆₀Te_x are investigated. The samples of compositions from C₆₀Te_0.1 to C₆₀Te₆ are prepared by thermal evaporation. The sample composition and the impurity distribution are controlled by the Rutherford backscattering technique. The Raman vibrational spectra indicate changes in the symmetry of a C₆₀ molecule: the strain of the molecule increases with a decrease in the tellurium concentration and decreases as the tellurium impurity concentration increases. The evolution of the optical absorption spectra and the electrical conductivity suggests that intercalation of a tellurium impurity leads to modification of the electronic structure of the material. This process is accompanied by a shift and change in shape of the optical absorption edge and a change in the electrical conductivity of films by several orders of magnitude depending on the composition. The electrical conductivity is minimum at a low tellurium impurity content.     

Physical properties and elemental composition of starlike fullerene-containing polystyrene films

The elemental composition of starlike fullerene-containing polystyrene films has been determined by the Rutherford backscattering, ion x-ray spectrum analysis, and nuclear reaction method. The physical properties of the films are investigated by ellipsometric, photoluminescence, and dc electrical conductivity techniques. The complex refractive index of the films is equal to 1.7?i(0.05?0.10). It is found that a maximum in the photoluminescence spectrum of the fullerene-containing polystyrene film is shifted toward the high-energy range as compared to that of the C₆₀ film. The energy shift is directly proportional to the number N of polymer chains chemically bonded to the fullerene molecule and can be described by the empirical formula ΔE [eV]=0.04N. The electrical conductivity of the films increases proportionally with the molar concentration of C₆₀.     

Doping and photoelectric properties of C60 films prepared by ionized cluster beam deposition

60 films by means of ionized cluster beam (ICB) deposition. X-ray diffraction (XRD) measurement showed the C₆₀ films to be polycrystalline. The films show negative resistance–temperature coefficients, and their room-temperature resistivity is greater than 10² Ω cm. The films were implanted with 80-keV phosphorus, BBr₃, Ar, and He ions, under doses ranging up to 10¹⁶ cm^-2. The resistivity of the implanted films decreases with increasing doses. n-type electrical conduction was observed for phosphorus-implanted C₆₀ films. The interaction of impinging ions with C₆₀ clusters was found to force the C₆₀ molecules to disintegrate and the films to amorphize. p-type conduction was observed for the C₆₀ films doped with aluminum by simultaneously sputtering aluminum during deposition. C₆₀/Si structures show heterojunction characteristics that can be influenced by light illumination. The photoelectric properties of the films were found to be improved by doping with aluminum. Received: 12 January 1998/Accepted: 24 March 1998     

Structure and electrical conductivity of ultrathin Ni-Cu films

The structure, phase composition, morphology, and electrical conductivity of Ni-Cu alloy ultrathin films having a thickness of d = 1?10 nm and a Cu concentration of 10–95 at % have been studied. All films are shown to be fcc Ni-Cu alloys; they have an island structure with an island size of 1.5–2 nm in the as-deposited films and of about 20 nm in the films annealed to 700 K. The electrical conductivity of the films depends on their thickness and morphology. For films with d ≈ 1 nm, the electrical conductivity is thermally activated with an activation energy E _a ≈ 0.086?0.095 eV. Films with d > 3 nm exhibit the metallic temperature dependence of electrical conductivity with a positive temperature coefficient of resistivity.     

Specific features of the temperature characteristics of electrical conductivity and photoconductivity of polymer composites containing Cu(II)/Cr(III) heterometallic complexes

The temperature characteristics of the electric current and the photocurrent in films of composites based on electrically neutral poly(vinyl butyral) with additions of Cu(II)/Cr(III) heterometallic cation-anion complexes are investigated. The electrical conductivity and photoconductivity of the polymer composite films in the visible optical range increase with a decrease in the distance between the metal centers in the complexes and upon introduction of acceptor additions of the C₆₀ fullerene into the composition of the polymer binder and increase exponentially with increasing temperature. The activation energy of electrical conduction and photoconduction exceeds 1 eV and depends weakly on the strength of the external electric field. The temperature characteristics of the electrical conductivity and photoconductivity of the materials under investigation are explained by the specific features of trapping of charge carriers at the interface between particles of the heterometallic complex and the polymer binder.     

Effect of oxygen on the electrophysical properties of some carbon allotropes (graphite and C60 fullerene)

The electrophysical properties of powder samples of graphite and C₆₀ fullerene have been studied in vacuum, oxygen ambient, and air. Room-temperature conduction of the samples has a percolative character. An increase of temperature brings about an increase of sample conductivity caused by oxygen desorption from the bulk. A peak-shaped feature not observed before has been found in the temperature behavior of the resistance of finely dispersed C₆₀ and graphite powder samples in the T=310–340 K interval. Oxygen atoms were found to be involved in charge transport in powder samples of graphite and C₆₀ fullerene through their electrical activity on the surface of grains differing in size. Fiz. Tverd. Tela (St. Petersburg) 39, 1703–1705 (September 1997)     

Effect of annealing temperature on the optical and electrical properties of amorphous As45.2Te46.6In8.2 thin films

The optical absorption of the As-prepared and annealed As_45.2Te_46.6In_8.2 thin films are studied. Films annealed at temperatures higher than 453 K show a decrease in the optical energy gap (E_o). The value of E_o increases from 1.9 to 2.43 eV with increasing thickness of the As-prepared films from 60 to 140 nm. The effect of thickness on high frequency dielectric constant (?_∞) and carrier concentration (N) is also studied. The crystalline structures of the As_45.2Te_46.6In_8.2 thin films resulting from heat treatment of the As-prepared film at different elevated temperatures is studied by X-ray diffraction. An amorphous-crystalline transformation is observed after annealing at temperatures higher than 453 K. The electrical conductivity at low temperatures is found due to the electrons transport by hopping among the localized states near the Fermi level. With annealing the films at temperatures higher than 473 K (the crystallization onset temperature) for 1 h, the electrical conductivity increases and the activation energy decreases, which can be attributed to the amorphous-crystalline transformations.     

Effect of annealing temperature on photoelectrochemical properties of nanocrystalline MoBi2(Se0.5Te0.5)5 thin films

Nanocrystalline MoBi₂(Se_0.5Te_0.5)₅ thermoelectric thin films have been deposited on ultrasonically cleaned glass and FTO-coated glass substrates by Arrested Precipitation Technique. The change in properties of MoBi₂(Se_0.5Te_0.5)₅ thin films were examined after annealing at the temperature 473 K for 3 h. The structural, morphological, compositional and electrical properties of thin films were characterized by X-ray Diffraction, Scanning Electron Microscopy, Energy Dispersive Spectroscopy, etc. Thermoelectric properties of the thin films have been evaluated by measurements of electrical conductivity and Seebeck coefficient in the temperature range 300–500 K. Our aim is to investigate the effect of annealing on behaviour of MoBi₂(Se_0.5Te_0.5)₅ thin films along with photoelectrochemical properties.     

Hall mobility of amorphous Ge2Sb2Te5

The electrical conductivity, Seebeck coefficient, and Hall coefficient of three-micron-thick films of amorphous Ge₂Sb₂Te₅ have been measured as functions of temperature from room temperature down to as low as 200 K. The electrical conductivity manifests an Arrhenius behavior. The Seebeck coefficient is p-type with behavior indicative of multi-band transport. The Hall mobility is n-type and low (near 0.07 cm²/V s at room temperature).     

Cu-MgF2复合纳米金属陶瓷薄膜的电导特性研究

用射频磁控共溅射法制备了Cu体积分数分别为10%，15%，20%和30%的Cu-MgF₂复 合金属陶 瓷薄膜.用x射线衍射、x射线光电子能谱和变温四引线技术对薄膜的微结构、组分及电导特 性进行了测试分析.微结构分析表明：制备的Cu-MgF₂复合薄膜由fcc-Cu晶态纳 米微粒镶嵌 于主要为非晶态的MgF₂陶瓷基体中构成，Cu晶粒的平均晶粒尺寸随组分增加从1 1.9nm增 至17.8nm.50—300K温度范围内的电导测试结果表明：当Cu体积 关键词： 2复合纳米金属陶瓷膜')" href="#">Cu-MgF₂复合纳米金属陶瓷膜 微结构 组分 电导特性 激活能 渗透阈