Phase shift analysis of modulated photocurrent: A new approach to determining the energy scale

One of the major problems of the method of phase shift analysis of modulated photocurrent for studying the density of states in the energy gap of amorphous semiconductors has been the determination of the energy scale corresponding to this DOS profile. This study presents a new way of dealing with this problem. This new method is especially useful in the case where the DOS profile lacks a characteristic peak. A computer analysis is used to confirm the validity of this method and to demonstrate how it can be used.     

微晶硅薄膜带隙态及微结构的研究

研究了氢化微晶硅薄膜费米能级以上的带隙态密度分布与薄膜微结构关系.采用拉曼谱和红外谱表征不同H稀释比制备的微晶硅薄膜的微结构.薄膜带隙态密度分布由调制光电流的相移分析技术测得.采用三相模型（非晶相、晶相和界面相）分析了薄膜带隙态密度与薄膜微结构的关系.结果表明,材料的带隙态密度随着界面相的增加而增加,当界面体积分数达到最大时,薄膜的带隙态密度也最大,即材料的带隙态密度与界面体积分数正相关. 关键词： 带隙态 界面相 微晶硅 调制光电流     

光寻址电位传感器的正交相位检波检测方法

光寻址电位传感器的幅度检测方法易受噪声干扰,灵敏度差,信噪比和精度低,且受调制光源的影响较大,影响检测结果的准确性.为此提出了一种基于正交相位检波的光寻址电位传感器检测方法.该方法是将光寻址电位传感器的输出光电流信号分别与两路正交信号相乘,通过低通滤波提取直流分量并相除,即可得到光寻址电位传感器的输出信号相位信息.与已有的光寻址电位传感器相位检测方法相比,该方法具有算法复杂度低、实时性高的优点.实验研究了调制光源光强对光寻址电位传感器幅度检测和相位检测的影响,对比分析了光寻址电位传感器的传统幅度检测方法与正交相位检波检测方法对pH检测的灵敏度、线性度及信噪比.结果表明,相比于幅度检测方法,调制光源光强对光寻址电位传感器的相位检测影响更小,在频率为10 kHz,pH的范围为1.68~10.01的情况下,相位检测方法比幅度检测方法测得的灵敏度增加了7 mV/pH,精度提高了14.9 mpH,非线性误差减小了0.003%,均方差减少了0.1051×10^-5,信噪比增加了8.2827 dB.该方法特别适用于弱光下的光寻址电位传感器检测.     

The role of the recombination centers on the modulated photocurrent: Determination of the gap state parameters of semiconductors

Exact expressions for the out of phase modulated photocurrent (MPC), the so-called Y signal, with a clear physical insight for density of states (DOS) spectroscopy are derived without any approximation. It is found that, apart from the capture rate of the majority carriers into the probed gap states, additional mixed contributions from the recombination processes of the free majority carriers with trapped minority carriers may be important for the Y signal of lower frequencies. These additional contributions prevent the extraction of a reliable DOS. They become important as long as the capture coefficient for the majority carriers of the recombination centers, where the minority carriers are trapped, is comparable to or higher than that of the recombination centers were the majority carriers are trapped. In this case, the recombination rate is relatively high and the mixed contributions from the recombination processes can be detectable in the experimental Y signal and may also induce a phase lead. Taking advantage of this behavior it can be experimentally verified when these recombination processes are negligible in order to safely extract the accurate DOS parameters.     

染料敏化太阳电池内部光路折转对电子传输特性的影响

基于染料敏化太阳电池(DSC)光阳极的反射层结构,建立了含有 光路折转的电子连续性方程.计算和分析了不同吸收条件和反射条件下的调制光 电流频率响应特性,研究了DSC内部光路折转对电子传输特性的影响.通过不同膜 厚的强度调制光电流谱 测试表明, 建立的模型反映了DSC内部光路折转时调制光电流频率 响应.动力学研究结果表明, 在含有反射层的DSC中,电子传输动力学过程依赖 于光吸收系数、薄膜厚度以及大颗粒反射能力等因素. DSC内部光路折转导 致较深陷阱被电子填充,缩短了电子在陷阱中的停留时间, 减小了俘获/脱俘影响, 使电子传输过程加快.     

Frequency-resolved photocurrent studies of a-Se

 Optically modulated photocurrent response of amorphous selenium (a-Se) thin films was measured between 20 K and 295 K, by using the in-quadrature frequency-resolved spectroscopy method. The results show that the modulated photocurrent depends on external parameters such as excitation light intensity and temperature, giving information about recombination kinetics. Received, 28 July 1996 /Accepted: 20 September 1996     

Structure determination of medium-sized sodium clusters

Sodium cluster anions Na(n)(-) with n = 39-350 have been studied by low temperature photoelectron spectroscopy and density functional theory (DFT). The highly structured experimental spectra are in excellent agreement with the electronic density of states (DOS) of the DFT lowest energy structures. Even for the largest sizes, a pronounced sensitivity of the DOS on fine geometric details could be observed, allowing for a reliable identification of a specific icosahedral growth motif. The intermediate sizes between the closed-shell Mackay clusters with 55, 147, and 309 atoms form by growth of overlayers, which often exhibit a twist deformation with respect to regular (Mackay-type) ones.     

Modeling and simulation of light-addressable potentiometric sensors

Results of modeling and theoretical simulation of the influence of intensity-modulated irradiation on the light-addressable potentiometric sensors based on the electrolyte-insulator-semiconductor and electrolyte-membrane-insulator-semiconductor structures are presented. A theoretical model for measuring a.c. photocurrent is developed based on the assumption that under modulated irradiation the conductivity of the semiconductor depletion layer is modulated. The electric equivalent a.c. schemes are presented and the measured a.c. components of photocurrents are calculated. Analytical expressions for photocurrent dependences on the parameters of the semiconductor and insulator, irradiation adsorption coefficient and intensity, gate voltage and pH concentration are presented. Numerical calculations were made for the p-Si/insulator/electrolyte and p-Si/insulator/membrane/electrolyte sensors. It is shown that only periodical excitation of any membrane brings to essential changes of the a.c. component of photocurrent.     

不同Cs、O电流比激活对GaAs光阴极灵敏度和稳定性的影响

鉴于不同的铯氧电流激活GaAs光阴极时会对激活过程和结果产生不同的影响,从而影响GaAs光阴极的灵敏度和稳定性.以固定铯源电流,改变氧源电流的方式获取不同铯、氧电流比,激活同类GaAs光阴极,得到了3组实验数据.对数据进行分析,结果表明:同类光阴极在相同条件下激活时,光电流出现的时间几乎一致,并且首个光电流峰值也非常接近;激活时ICs/IO=1.07是目前获得高灵敏度、高稳定性GaAs光阴极的最佳电流比,而ICs/IO=1.10时光阴极灵敏度低但稳定性好,ICs/IO=1.03时光阴极灵敏度高但稳定性差.双偶极层模型认为Cs、O激活后GaAs表面形成了稳定均匀的GaAs-O-Cs:Cs-O-Cs双偶极层,并达到了负电子亲和势,这一点与实验数据的分析结果相一致.该方法可用于提高GaAs光阴极灵敏度和稳定性.     

用不同密度分布的发光分子探测光子晶体的全态密度

单一原子（分子）的自发辐射衰变的动力学性质强烈地依赖于其在光子晶体中的位置及其辐射偶极矩与所处位置场的相对方向.测量单一原子（分子）的自发辐射衰变特性只能反映光子晶体的局域态密度特征，而不能反映光子晶体的全态密度特征.理论上研究发现，通过引入含不同密度分布的发光分子可以探测到光子晶体的全态密度的部分细节甚至全部信息.按来源首次将全态密度分为两个部分，证明了特定的发光分子分布可以完善地反映其中的一部分或者全部，这为解释、设计加速或抑制原子（分子）自发辐射的实验提供了有益的指导. 关键词： 光子晶体 自发辐射 态密度 密度分布     

Electric-field-tunable electronic properties of graphene quantum dots

The tight-binding method is employed to investigate the electronic properties of a square graphene quantum dot subject to an in-plane electric field (F). The electronic properties are strongly modified by tuning the field strength or altering the field direction. F will change state energies, alter energy gaps, and induce energy gap modulations. State energies show oscillatory behavior with the change of the field strength. The oscillating amplitude and period are further modulated by the change of the field direction. The field-orientation-dependent electronic properties originate in the geometrical anisotropy of the square graphene quantum dot. Moreover, the density of states (DOS), exhibiting many discrete peaks, directly reveals the characteristic of the electric-field-tunable electronic properties. The number and frequencies of DOS peaks are significantly dependent on the field strength and direction.     

Evolution of Photocurrent during Coadsorption of Cs and O on GaAs （100）

The photocurrent and spectral response characteristics of gallium arsenide （GaAs） are obtained by a multiinformation measurement system, and the evolution of the photocurrent versus the Cs：O flux ratio is investigated. The experimental results show that the photocurrent increases approximately exponentially after the first exposure to Cs until a maximum sensitivity is reached, the detailed evolution process and the ultimate photocurrent are different for different samples. These differences are analysed, and according to the process of coadsorption of Cs and oxygen on GaAs, an equation is presented to explain the increase of photocurrent.     

Oxygen K-edge in vanadium oxides: simulations and experiments

Band-structure (BS) calculations of the density of states (DOS) using the full potential augmented plane waves code WIEN97 were performed on the four single-valence vanadium oxides VO, V₂O₃, VO₂ and V₂O₅. The DOS are discussed with respect to the distortions of the VO₆ octahedra, the oxidation states of vanadium and the orbital hybridisations of oxygen atoms. The simulated oxygen K-edge fine structures (ELNES) calculated with the TELNES program were compared with experimental results obtained by electron energy-loss spectrometry (EELS), showing good agreement. We show that changes in the fine structures of the investigated vanadium oxides mainly result from changes in the O-p DOS and not from the shift of the DOS according to a rigid band model. Received 17 December 2001 / Received in final form 19 June 2002 Published online 13 August 2002     

The ab initio calculations of the doping Zr's influence on the electronic structure of AlCo2Ti

The electronic structures of the ternary (Hume-Rothery) L2₁-phase compound AlCo₂Ti are calculated by first-principles using full potential linearized augmented plane wave (FLAPW) method with the generalized gradient approximation (GGA). The ab initio results are analyzed with a simplified model for Al-based compounds containing transition metal (TM) atoms. The results show that the total DOS depends strongly on the positions of TM atoms, and the TM d DOS plays a crucial role in hybridization with other element valence electrons. However, the Al 3s states are repelled far away from the Fermi energy in studied sample, and the Al 3d states are far more extended-like in the character than the d states. Furthermore, the total DOS_s are modulated by Al 3p states and the Al 3p states are more sensitive than d states to change in the electronic interactions. Then, the Al 3p is also important for the ternary stability of the intermetallic compound. The Co-Ti interaction becomes stronger by the doping element Zr in the Al₄Co₈Ti₃Zr structure. Especially, the doping Al₄Co₈Ti₃Zr alloy has a larger value DOS at the Fermi level and makes the total DOS gap smaller than the AlCo₂Ti.     

Density of states of superlattices with multiple layers per period

Density-of-states (DOS) investigations of polytype superlattices (SLs), whose period consists of more than two different layers, are presented. Local DOS (LDOS) is computed as a function of both the electron energy and the space coordinate, which illustrates — in a direct way — the spatial localization, over the SL period, of states forming the energy minibands. A few examples of AlGaAs-based polytype SLs with a coupled-well, step-well and δ-doped basis are analysed, indicating that various LDOS distributions within SL minibands can be arranged. By changing the basis geometry, the electronic DOS can either be selectively confined to a particular SL layer or extend over the whole SL period, which provides a means of modifying the spatial overlap of states from different SL minibands and thus, tuning the respective interband transitions. In particular, polytype SLs with similar miniband structures may exhibit essentially different LDOS features and, consequently, the different transport and optical characteristics. Therefore, it is emphasized that — for a particular device application of a complex-basis SL — not only the electronic level structure should be appropriately designed, but also the corresponding space-charge distributions should be carefully considered.     

Phase shift analysis of modulated photocurrent: Determination of the energy scale

For the determination of the density of states in the mobility gap of amorphous semiconductors using the phase shift analysis of modulated photocurrent, this paper suggests that making use of the magnitude of the induced photocurrent helps to remove arbitrariness in the energy scale. The working equations for the density of states and the corresponding energy position are expressed in terms of the intensity of the photocurrent. A simulation is made for a specific distribution, to investigate the validity of the procedure. The results show that the profile of the energetic distribution of localized states and the exact energy position of each state are consistent with the original distribution considered.     

Density of quantum states in quasi-1D layers

Recently, new quantum effects have been studied in thin nanograting layers. Nanograting on the surface imposes additional boundary conditions on the electron wave function and reduces the density of states (DOS). When the nanograting dimensions are close to the de Broglie wavelength, the DOS reduction is considerable and leads to changes in the layer properties. DOS calculations are challenging to perform and are related to the quantum billiard problem. Performing such calculations requires finding the solutions for the time-independent Schrödinger equation with Dirichlet boundary conditions. Here, we use a numerical method, namely the Method of Auxiliary Sources, which offers significant computational cost reduction relative to other numerical methods. We found the first five eigenfunctions for the nanograting layer and compared them with the corresponding eigenfunctions for a plain layer by calculating the correlation coefficients. Furthermore, the numerical data were used to analyze the DOS reduction. The nanograting is shown to reduce the probability of occupation of a particular quantum state, reducing the integrated DOS by as much as 4.1-fold. This reduction in the DOS leads to considerable changes in the electronic properties.     

A new technique to measure the differential XAFS spectrum

A new technique has been developed for direct measurement of the differential X-ray absorption fine structure(XAFS) spectrum by the energy-modulation method. To acquire the energy-oscillating incident X-ray beam, a piezoelectric actuator is used to control the double-crystal monochromator. A logarithmic converter circuit and a lock-in amplifier are used to extract the modulated signals. The normal and differential XAFS spectra of the Mn K-edge of Li2 Mn O3 have been collected. The X-ray-absorption near-edge-structure(XANES) spectra verify that the signal-to-noise ratio has been greatly improved by the new technique, and the extended X-ray absorption fine structure(EXAFS) spectra demonstrate that this new technique can efficiently enhance the signals of the backscattering atoms.     

High-speed scanning photocurrent imaging techniques on nanoscale devices

We report the characterization of individual carbon nanotube and Si nanowire field-effect transistors through high-speed scanning photocurrent microscopy with a scanning speed of 1 frame/s and a photocurrent sensitivity of less than 1 pA. This enables us to record photocurrent images that are free from hysteresis effects that modify the field configurations applied by the gate bias voltage. We can clearly resolve the photocurrent signals with polarity inversion near the metallic contacts under gate bias conditions which cause severe hysteresis effects in the nanowire devices. We also studied the dynamics of the hysteresis effects for different gate bias configurations. This high-speed photocurrent imaging technique is particularly useful for obtaining two-dimensional, localized optoelectronic characteristics and their correlation with overall device performance without encountering undesired dynamic responses.     

Fine structure spectrography and its application in speech

A filterbank-based algorithm for time-varying spectral analysis is proposed. The algorithm, which is an enhanced realization of the conventional spectrogram, consists of hundreds or thousands of highly overlapping wideband filter/detector stages, followed by a peak detector that probes the filter/detector outputs at very short time intervals. Analysis with synthetic modulated signals illustrates how the proposed method demodulates these signals. The resulting spectrogram-like display, referred to as a "fine structure spectrogram," shows the fine structure of the modulations in substantially higher detail than is possible with conventional spectrograms. Error evaluation is performed as a function of various parameters of a single- and two-component synthetic modulated signal, and of parameters of the analysis system. In speech, the fine structure spectrogram can detect small frequency and amplitude modulations in the formants. It also appears to identify additional significant time-frequency components in speech that are not detected by other methods, making it potentially useful in speech processing applications.