Contributions to photodoping in oxygen-deficient YBa2Cu3Ox films

We report our studies on the superconducting and normal-state properties of metallic thin films ( 52 K) exposed to long-term white-light illumination (photodoping). It was observed that the effects of photoexcitation strongly depended on the temperature at which the photodoping was performed. At low temperatures, both the Hall mobility and the Hall number were photoenhanced, whereas, at temperatures slightly below room temperature, the Hall mobility initially showed an abrupt increase followed by a long-term decrease, and the Hall number increased even stronger than at low temperatures. The enhancement of the film's superconducting transition temperature T_c, caused by photodoping, exhibited the same temperature dependence as the enhancement of the Hall number, being largest ( 2.6 K) at high temperatures. From the asynchronous behavior of the Hall quantities, we conclude that both the photoassisted oxygen ordering and charge transfer mechanisms contribute to photodoping. The relative contributions of both mechanisms and, thus, the electronic properties of the photoexcited state are strongly temperature dependent. Studies of the relaxation of the photoexcited state at 290 K showed an unexpectedly short relaxation time of the Hall mobility after termination of the illumination. The relaxation saturated somewhat below the initial, undoped value, similarly to the decrease of the Hall mobility, observed upon long illumination. These latter findings give evidence for a competition between the oxygen ordering and thermal disordering processes during and after the photoexcitation in the high-temperature range. Received: 13 October 1997 / Accepted: 19 November 1997     

Charge-carrier density collapse in La0.67Ca0.33MnO3and La0.67Sr0.33MnO3 epitaxial thin films

We measured the temperature dependence of the linear high field Hall resistivity of ( K) and ( K) thin films in the temperature range from 4 K up to 360 K in magnetic fields up to 20 T. At low temperatures we find a charge-carrier density of 1.3 and 1.4 holes per unit cell for the Ca- and Sr-doped compound, respectively. In this temperature range electron-magnon scattering contributes to the longitudinal resistivity. At the ferromagnetic transition temperature a dramatic drop in the number of charge-carriers n down to 0.6 holes per unit cell, accompanied by an increase in unit cell volume, is observed. Corrections of the Hall data due to a non saturated magnetic state will lead a more pronounced charge-carrier density collapse. Received 22 July 1999 and Received in final form 7 October 1999     

Spin hall accumulation in ballistic nanojunctions

We propose a new scheme of spin filtering employing ballistic nanojunctions patterned in a two dimensional electron gas (2DEG). Our proposal is essentially based on the spin-orbit (SO) interaction generated by a lateral confining potential (β-SO coupling ). We demonstrate that the flow of a longitudinal unpolarized current through a ballistic T and X junction with this spin-orbit coupling will induce a spin accumulation which has opposite signs for the two lateral probes and is, therefore, the principal observable signature of the spin Hall effect in these devices.     

Evidence of critical fluctuations from the magnetoconductivity data in Bi2Sr2Ca2Cu3O10+x phase

The fluctuation-induced magnetoconductivity of the Bi₂Sr₂Ca₂Cu₃O_10+x phase is studied above zero-field critical temperature Tc(0) and for moderate magnetic fields. It is found that the Gaussian approximation for superconducting fluctuations underestimates the negative fluctuation magnetoconductance drastically in the Tc(0) < T < Tc(0) + 20 K temperature range. Taking into account the critical fluctuation contribution on the base of self-consistent Hartree approximation makes it possible to explain the data quantitatively in terms of the only Aslamazov-Larkin contribution for different magnetic fields and temperatures, consistently with the zero field data. Received 14 April 2000 and Received in final form 13 July 2000     

Isotope effect for transport and magnetic properties of La 0.35 Pr 0.35 Ca 0.3 MnO 3 thin films

The effect of ¹⁶ O → ¹⁸ O isotope substitution on electrical resistivity, magnetoresistance, and ac magnetic susceptibility was studied for La_0.35Pr_0.35Ca_0.3MnO₃ epitaxial thin films deposited onto LaAlO₃ and SrTiO₃ substrates. For the films on LaAlO₃, the isotope substitution resulted in the reversible transition from a metal-like to insulating state. The applied magnetic field ( H ≥ 2 T) transformed the sample with ¹⁸O back to the metallic state. The films on SrTiO₃ remained metallic at low temperatures for both ¹⁶O and ¹⁸O, but the shift of the resistivity peak corresponding to onset of metallic state exceeded 63 K after ¹⁶ O → ¹⁸ O substitution. The temperature dependence of both resistivity and magnetic susceptibility was characterized by hysteresis, especially pronounced in the case of the films on LaAlO₃. Such a behavior gives certain indications of the phase separation characteristic of interplay between ferromagnetism and charge ordering. Received 11 February 2000 and Received in final form 13 September 2000     

Generation of 3rd and 5th harmonics in a thin superconducting film by temperature oscillations and isothermal nonlinear current response

The generation of harmonics of the voltage response is considered when an AC current is applied through a superconducting film above T_c. It is shown that almost at all temperatures the mechanism of the temperature oscillations created by the AC current and the temperature dependence of the resistance dominates over the isothermal nonlinear electric conductivity. Only in a narrow critical region close to T_c the latter is essential for the generation of the harmonics. A detailed investigation of harmonics generation provides an accurate method for measuring the thermal boundary conductance between the film and the insulating substrate. The critical behaviour of the third harmonic will give a new method for the determination of the lifetime of metastable Cooper pairs above T_c. The comparison of the calculated fifth harmonics of the voltage with the experiment is proposed as an important test for the applicability of the employed theoretical models. Received 8 September 2001     

Mechanism of grain-boundary magnetoresistance in Fe O films

The magnetotransport properties of magnetite films with different microstructures were investigated in order to identify prerequisites for the attainment of a large tunnelling magnetoresistance in polycrystalline samples. Epitaxial films on MgAl₂O₄, polycrystalline films on Al₂O₃ and rough MgAl₂O₄ substrates and a polycrystalline La_0.7Ca_0.3MnO₃ film on MgO were compared. Although grain boundaries induce a large high-field magnetoresistance in magnetite films, the low-field magnetoresistance characteristic for spin-polarized tunnelling was virtually absent in these samples. Two factors might be responsible for this behaviour: (1) grain boundaries in magnetite are conducting and do not form tunnelling barriers and (2) the spin-polarization near grain boundaries is suppressed due to non-stoichiometry. Received 15 April 2002 Published online 13 August 2002     

Particle size effect of a.c. superconducting properties in compound

Using a new starting material of Ba₂Cu₃O₅ and a three step heat treatment, single phase Tl₂Ca₁Ba₂Cu₂O₈ high- superconducting samples have been prepared, possessing the onset- and critical temperatures K and K. The morphology dependent value of is 17 Oe, 8 Oe and 5 Oe at 77 K in the case of bulk, crushed and powdered materials, respectively. The a.c. susceptibility, r.f. susceptibility and microwave absorption properties show a significant dependence on the particle size with a sharp change in the interval between 750 μm and 1200 μm. These experiments provide characteristic parameters for intergrain material (treated as 3D Josephson network) as mm, Oe and A/cm² at 77 K. The data are controlled by modulated microwave absorption measurements. The results obtained can be explained well both by the finite size junction model and cavity mode absorption model. The Josephson network is determined unambiguously by metallic S-N-S weak links. Received 10 October 1998     

Oxygen dependence of the fermi-level and electron-phonon coupling constant in YBa2Cu3Ox films

We present a detailed investigation of the dynamics of laser-excited carriers in YBa₂Cu₃O_x thin films with various oxygen contents x. We observe a Fermi level shift due to oxygen reduction and determine the energy gap between the Fermi level and the upper Hubbard band. The electron-phonon coupling constant is determined as a function of transition temperature.     

The temperature dependence of the perpendicular giant magnetoresistance in Co/Cu multilayered nanowires

A theory, based on earlier work by Valet and Fert, is first presented to describe the influence of temperature on the perpendicular giant magnetoresistance (GMR) in multilayers. Then we present GMR measurements performed at T=77 K and at room temperature on Co/Cu multilayered nanowires with layer thicknesses ranging from a few nm to 1 μm. We use our model to obtain a good quantitative fit to the experimental results in both the short spin diffusion length limit and out of this limit. We discuss the temperature dependence of the bulk parameters, the scattering spin asymmetry coefficient and spin diffusion length in the Co layers. Received: 25 January 1998 / Accepted: 6 May 1998     

Localization effects in the charge density wave state [4]of the quasi-two-dimensional monophosphate tungsten bronzes {(P{O_2})_4}{(W{O_3})_{2m}}(m = 7,8,9)

The monophosphate tungsten bronzes (PO ₂ ) ₄ (WO ₃ ) _2m are quasi-two-dimensional conductors which show charge density wave type electronic instabilities. We report electrical resistivity and magnetoresistance measurements down to 0.30 K and in magnetic fields up to 16 T for the m = 7, 8 and 9 members of this family. We show that these compounds exhibit at low temperature an upturn of resistivity and field dependences of the magnetoresistance characteristic of localization effects. We discuss the dimensionality of the regime of localization as m is varied. We show that for m =7, the regime is quasi-two-dimensional and three-dimensional for m = 8, 9. Received 16 September 1999     

Positive and negative Hanbury-Brown and Twiss correlations in normal metal-superconducting devices

In the light of the recent analogs of the Hanbury-Brown and Twiss experiments [1] in mesoscopic beam splitters, negative current noise correlations are recalled to be the consequence of an exclusion principle. Here, positive (bosonic) correlations are shown to exist in a fermionic system, composed of a superconductor connected to two normal reservoirs. In the Andreev regime, the correlations can either be positive or negative depending on the reflection coefficient of the beam splitter. For biases beyond the gap, the transmission of quasiparticles favors fermionic correlations. The presence of disorder enhances positive noise correlations. Potential experimental applications are discussed. Received 1 June 1999     

Conduction in magnesium phthalocyanine thin films with aluminium electrodes

The various electrical properties and the nature of conduction mechanisms of magnesium phthalocyanine thin film devices with top and bottom aluminium electrodes have been investigated. The conduction mechanism was identified as injection limited essentially due to the electrode material. Even with the same electrode materials, the device showed asymmetric conduction behavior in the forward and reverse bias. In general the conduction was interpreted as a Schottky emission with barrier height Φ_s=1.07 eV for the forward bias and Φ_s=1.09 eV in the reverse bias. The effect of oxygen on the conductivity of the device has also been investigated. In the oxygen doped samples the conductivity is decreased which may be attributed to an interfacial layer between the electrode and the organic layer. Further in the oxygen doped sample while a Schottky emission is observed at lower voltages Poole-Frenkel conductivity was identified in the higher voltage region.     

Interpretation of the magnetoresistance in doped magnetic tunnel junctions

We present a quantum mechanical model of the magnetoresistance in ferromagnetic tunnel junctions artificially doped by the introduction of layers of impurities in the middle of the barrier. The electron transport across the barrier is described by a combination of direct tunneling, tunneling assisted by spin-conserving scattering and tunneling assisted by spin-flip scattering. With this model, we interpret recent experimental results concerning the dependence of the TMR amplitude on the amount of impurities in the barrier and on temperature. Received 1st February 2001 and Received in final form 14 June 2001     

Spin-dependent transport in cluster-assembled nanostructures: influence of cluster size and matrix material

Spin-dependent transport in granular metallic nanostructures has been investigated by means of a thermoelectric measurement. Cobalt clusters of well-defined size (〈n〉 = 15-600) embedded in copper and silver matrices show magnetic field responses of up to several hundred percent at low temperature. The experimental observations are attributed to spin mixing. The influence of cluster size and matrix are discussed.     

Dynamical mean-field study of the Mott transition in thin films

The correlation-driven transition from a paramagnetic metal to a paramagnetic Mott-Hubbard insulator is studied within the half-filled Hubbard model for a thin-film geometry. We consider simple-cubic films with different low-index surfaces and film thickness d ranging from d=1 (two-dimensional) up to d=8. Using the dynamical mean-field theory, the lattice (film) problem is self-consistently mapped onto a set of d single-impurity Anderson models which are indirectly coupled via the respective baths of conduction electrons. The impurity models are solved at zero temperature using the exact-diagonalization algorithm. We investigate the layer and thickness dependence of the electronic structure in the low-energy regime. Effects due to the finite film thickness are found to be the more pronounced the lower is the film-surface coordination number. For the comparatively open sc(111) geometry we find a strong layer dependence of the quasi-particle weight while it is much less pronounced for the sc(110) and the sc(100) film geometries. For a given geometry and thickness d there is a unique critical interaction strength U _c2 (d) at which all effective masses diverge and there is a unique strength U _c1 (d) where the insulating solution disappears. U _c2 (d) and U _c1 (d) gradually increase with increasing thickness eventually approaching their bulk values. A simple analytical argument explains the complete geometry and thickness dependence of U_c2. U_c1 is found to scale linearly with U_c2. Received 19 August 1998     

Anomalies of attenuation and phase velocity of surface acoustic waves in YBa2Cu3O7‒δ thin films in the vicinity of Tc

We present measurements of the attenuation and phase velocity of surface acoustic waves in thin YBa₂Cu₃O films as a function of temperature, in magnetic fields up to 3.6 T applied parallel to the c-axis of the films. We have observed anomalies in both, the attenuation and the phase velocity in the vicinity of the superconducting critical temperature which do not depend on the magnetic field. Possible origins of these anomalies, observed, to our knowledge, for the first time in YBa₂Cu₃O thin films, are discussed and compared to bulk acoustic wave experiments. We present a kind of feedback technique for surface acoustic waves which improves the sensitivity of this type of measurement. The actual sensitivity limits are mentioned. Received: 7 August 1997 / Revised: 7 November 1997 / Accepted: 17 November 1997     

Spin filtering through ballistic nanojunctions, the role of geometry and of spin orbit interaction

We suggest a spin filter scheme using T-stub nanometric crossjunctions patterned in two dimensional electron gases (2DEGs) in the presence of spin orbit interaction (SOI). We compare the effects of SOI arising from vertical confinement of charge carriers in the well, Rashba or α-SOI, with SOI generated by lateral confinement of the wire, β-SOI. We show that β coupling can be more effective in generating a spin polarized current as compared to α-SOI. We also compare the efficiency of the T-stub filter with the one of the X shaped cross junction.