Photoluminescence of Anisotropically etched silicon

Visible room-temperature luminescence of Anisotropically Chemically Etched (ACE) silicon under spontaneous chemical surface modification in HNO₃:HF solution is reported. The material is investigated by SEM, AES, IR transmission and Raman scattering methods.     

Photoluminescence in amorphous TiO2-PbO systems

Photoluminescence (PL) at room temperature has been achieved in amorphous thin films and powders of the TiO₂–PbO system. They were prepared by the polymeric precursor method with [PbO]/[TiO₂] molar ratios ranging from 0.0 to 1.0. The energy position of maximum PL emission and the PL intensity showed dependence on Pb concentration. The Pb addition suggests an increase in the number of non-bridging oxygens (NBO) in the amorphous TiO₂ network. These results support the relationship between photoluminescence and structure in TiO₂-based amorphous materials. Received: 7 February 2001 / Accepted: 8 February 2001 / Published online: 27 June 2001     

Temperature effect on porous silicon luminescence

A theoretical surface-state model of porousilicon luminescence is proposed. The temperature effect on the PhotoLuminescence (PL) spectrum for pillar and spherical structures is considered, and it is found that the effect is dependent on the doping concentration, the excitation strength, and the shape and dimensions of the Si microstructure. The doping concentration has an effect on the PL intensity at high temperatures and the excitation strength has an effect on the PL intensity at low temperatures. The variations of the PL intensity with temperature are different for the pillar and spherical structures. At low temperatures the PL intensity increases in the pillar structure, while in the spherical structure the PL intensity decreases as the temperature increases, at high temperatures the PL intensities have a maximum for both models. The temperature, at which the PL intensity reaches its maximum, depends on the doping concentration. The PL spectrum has a broader peak structure in the spherical structure than in the pillar structure. The theoretical results are in agreement with experimental results.     

Photoluminescence in amorphous (PbLa)TiO3 thin films deposited on different substrates

Pb_1−XLa_XTiO₃ thin films, (X=0.0; 13 and 0.27 mol%) were prepared by the polymeric precursor method. Thin films were deposited on Pt/Ti/SiO₂/Si (1 1 1), Si (1 0 0) and glass substrates by spin coating, and annealed in the 200-300°C range in an O₂ atmosphere. X-ray diffraction, scanning electron microscopy and atomic force microscopy were used for the microstructural characterization of the thin films. Photoluminescence (PL) at room temperature has been observed in thin films of (PbLa)TiO₃. The films deposited on Pt/Ti/SiO₂/Si substrates present PL intensity greater than those deposited on glass and silicon substrates. The intensity of PL in these thin films was found to be dependent on the thermal treatment and lanthanum molar concentration.     

Polarization effects on the line-strength calculations of Er3+-doped LiNbO3

The polarized optical absorption of Er³⁺-doped LiNbO₃ has been obtained and analyzed within the framework of the Judd-Ofelt theory including polarization dependences. These results are compared with those obtained under unpolarized conditions. Fluorescence lifetimes for different Er³⁺ concentrations have also been measured in the temperature range 10–300 K.     

Photoluminescence characteristics of neodymium oxide nanocrystal/titania/ormosil composite sol-gel thin films

Neodymium (III) oxide nanocrystal/titania/organically-modified silane (ormosil) composite thin films have been prepared using a chemical approach consisting of a combination of inverse microemulsion and sol-gel techniques at low temperature. Transmission electron microscopy shows that the neodymium (III) oxide nanoparticles have a needle-like nanocrystal structure. A strong room temperature emission at 1064 nm, corresponding to the ⁴ F _3/2?⁴ I _11/2 transition, has been observed as a function of the heat treatment temperature used for the production of the composite thin films. In addition to this emission, two other main emissions at 890 nm and at 1336 nm have also been observed. In particular, there was a clear shoulder peak at 1145 nm, probably be due to the host matrix, which was observed in all the measured samples and this shoulder peak gave a maximum intensity after heat treatment at 300 °C. Received: 6 September 2000 / Accepted: 15 November 2000 / Published online: 20 June 2001     

Photoluminescence of a silver-doped glass

The absorption, emission and excitation spectra of Ag⁺ ions in a soda lime glass doped with two different concentration of silver are investigated. Absorption spectra exhibit a main broad band peaked at about 260 nm (4.77 eV) with a shoulder at about 227 nm (5.46 eV). The relative height of the shoulder depends on silver concentration in the glass. Emission spectra of Ag⁺ are dominated by an ultraviolet broad band at about 330 nm (3.76 eV). The excitation spectra for this emission show a preponderant broad band peaked at about 227 nm (5.46 eV) which coincides with peak position of the shoulder displayed in the optical absorption spectra. A weak broad featureless emission band centred at about 550 nm (2.25 eV) with an excitation peak at about 242 nm (5.12 eV) is tentatively related to an impurity from the host silica glass rather than originated in silver-type centres. Comparison of the luminescence decay curves for both emissions show substantial differences between them. Consequently, the emissions in the time-resolved spectra can easily be discriminated.     

Photoluminescence properties of anodic alumina membranes with ordered nanopore arrays

Photoluminescence (PL) of anodic alumina membranes (AAMs) with ordered nanopore arrays fabricated in oxalic acid has been investigated under different annealing temperatures. The PL intensity firstly increases, and at 500 °C reaches a maximum value, then decreases. The structural transition from amorphous to γ-Al₂O₃ in AAMs has been confirmed by X-ray diffraction. Thermogravimetric analysis results and electron paramagnetic resonance measurements revealed that the PL band of alumina membranes could be attributed to the oxygen-related defect centers (F⁺ centers) rather than the luminescent centers transformed from oxalic impurities.     

Soft X-ray excited optical luminescence studies of gold(I) complex with diphosphine and 4,4′-bipyridyl ligands

The luminescence of gold(I) complex [{-Ph₂P(CH₂)₂Ph₂-AuNC₅H₄C₅H₄NAu-}_x]^2x+ [CF₃CO₂⁻]_2x, in the solid state has been studied by soft X-ray excited optical luminescence and near-edge X-ray absorption fine structures at the C K-edge and we find that the origin of the luminescence is primarily from the 4,4′-bipyridine ligand facilitated by gold(I)-ligand interaction.     

Photoluminescence enhancement and stabilisation of porous silicon passivated by iron

Iron is incorporated in porous silicon (PS) by impregnation method using Fe(NO₃)₃ aqueous solution. The presence of iron in PS matrix is shown from energy-dispersive X-ray (EDX) analysis and Fourier transform infrared (FTIR) measurements. The optical properties of PS and PS-doped iron are studied by photoluminescence (PL). The iron deposited in PS quenched the silicon dangling bonds then increased the PL intensity. The PL peak intensity of impregnated PS is seven times stronger than that in normal PS. Upon exposing iron-PS sample to ambient air, there is no significant change in peak position but the PL intensity increases during the first 3 weeks and then stabilises. The stability is attributed to passivation of the Si nanocrystallites by iron.     

Photoluminescence Characterization of Silicon Nanoparticles Hybridized Europium Complex

A europium complex Eu (DBM)3 TPPO (Eu tris(benzoylmethide)-(triphenylphosphine oxide)) and silicon nanoparticles have been hybridized.The hybridization can evidently change the photoluminescence (PL) characteristics of the Eu complex in the following aspects:under an excitation of 390nm,the intensity of the PL peak at 611nm due to the ^5Du-^7F2 transition of the Eu^3 ions has been increased by 30%,and thc integrated PL intensity in the visible range has been increased by nearly 3 times;the PL excitation efficiency beyond 440nm has been improved cvidently;the peak in the PL excitation spectrum shifts from 408nm to 388nm,and the PL decay time decreases from 2.07 to 0.96μs,The experimental results indicatde that in the PL process,the photoexcited energy may transfer from the silicon nanoparticlcs to the Eu^3 ions.     

Two-dimensional photonic crystals with pure germanium-on-insulator

We have investigated pure germanium two-dimensional photonic crystals. The photonic crystals which exhibit resonances in the near infrared spectral range were fabricated on germanium-on-insulator substrates using standard silicon-based processing. The germanium-on-insulator substrate consists of a thin layer of pure germanium-on-oxide deposited on a silicon substrate. The optical properties are probed by the direct band gap optical recombination of pure germanium at room temperature. Resonant optical modes are evidenced between 1.68 and 1.53 μm in different type of hexagonal cavities (H1-H5). The spectral position of the modes is controlled by the lattice periodicity and air filling factor of the photonic crystals. Close to the Ge band edge, the quality factors are limited by the bulk material absorption.     

Charge compensation on the luminescence properties of ZnWO4:Tb phosphors via hydrothermal synthesis

A phosphor Tb³⁺-doped ZnWO₄ (ZWO:Tb) phosphors were prepared by a hydrothermal method. X-ray powder diffraction (XRD) analysis revealed that the as-obtained sample is pure ZnWO₄ phase. The excitation and emission spectra indicated that the phosphor could be well excited by ultraviolet light (272 nm) and emit blue light at about 491 nm and green light at about 545 nm. Significant energy transfer from WO₄²⁻ groups to Tb³⁺ ions has been observed. Two approaches to charge compensation are investigated: (a) 2Zn²⁺ = Tb³⁺ + M⁺, where M⁺ is a monovalent cation like Li⁺, Na⁺ and K⁺ acting as a charge compensator; (b) 3Zn²⁺ = 2Tb³⁺ + vacancy. Compared with two charge compensation patterns in the ZnWO₄:Tb³⁺, it has been found that ZnWO₄:Tb³⁺ phosphors used Li⁺ as charge compensation show greatly enhanced bluish-green emission under 272 nm excitation.     

Luminescence of Ce doped LaPO4 nanophosphors upon Ce 4f-5d and band-to-band excitation

Luminescence spectral-kinetic studies have been performed for pure and Ce-doped LaPO₄ micro- and nanosized phosphates using synchrotron radiation for the excitation within 5-20 eV energy range at T=8-300 K. Mechanisms for the excitation of Ce³⁺ 5d-4f emission as well as the quenching processes are discussed. The influence of surface defects has been considered to modify considerably the luminescent properties of nanosized phosphors upon the excitation in the energy range of Ce³⁺ 4f-5d transitions and LaPO₄ host absorption.     

Spectral-kinetic characteristics of Pr luminescence in LiLuF4 host upon excitation in the UV-VUV range

Spectral-kinetic study of Pr³⁺ luminescence has been performed for LiLuF₄:Pr(0.1 mol%) single crystal upon the excitation within 5-12 eV range at T=8 K. The fine-structure of Pr³⁺ 4f ²→4f 5d excitation spectra is shown for LiLuF₄:Pr(0.1 mol%) to be affected by the efficient absorption transitions of Pr³⁺ ions into 4f 5d involving 4f ¹ core in the ground state. Favourable conditions have been revealed in LiLuF₄:Pr(0.1 mol%) for the transformation of UV-VUV excitation quanta into the visible range. Lightly doped LiLuF₄:Pr crystals are considered as the promising luminescent materials possessing the efficient Pr³⁺³P₀ visible emission upon UV-VUV excitation. The mechanism of energy transfer between Lu³⁺ host ion and Pr³⁺ impurity is discussed.     

Energy of the first 4f→4f5d transition of Eu in inorganic compounds

fd-excitation, absorption, reflection, and df-emission spectra presented in the literature on Eu²⁺ in inorganic compounds have been gathered and re-analyzed. Emission wavelength, width of the emission band, absorption wavelength, Stokes shift, and redshift pertaining to Eu²⁺ in more than 300 different compounds (fluorides, chlorides, bromide, iodides, oxides, sulfides, selenides, and nitrides) are presented. From the data, it is possible to predict for each of the 13 lanthanide ions (La²⁺, Ce²⁺, Pr²⁺, until Yb²⁺), doped in any of the compounds compiled, the energy of the transition from the 4fⁿ ground state to the first 4fⁿ⁻¹5d level and also the energy of df-emission. A brief overview on the relationships between redshift, Stokes shift, and the width of the emission with the type of compound is given.     

A novel approach for the development of photoluminescent material

We report on several amorphous compounds based on different metal oxianions with intense photoluminescence at room temperature. These compounds were synthesised by a soft chemical process and deposited on Si (100) by a spin-coating technique. To select these different metal oxianions, a classic concept based on a metal oxide network former is used. We describe a minimum set of requirements to obtain an amorphous metal oxide with photoluminescence emission at room temperature. Received: 27 August 2001 / Accepted: 29 August 2001 / Published online: 20 December 2001     

Determination of the dielectric function of porous silicon by high-order laser-harmonic radiation

Porous-silicon reflectance has been determined over a large energy range, from 1 eV to 16 eV, by combining a NIR/visible/UV spectrometer with a new VUV light source as laser-harmonic radiation. The porous-silicon dielectric function was deduced from reflectance measurements by Kramers–Kronig analysis. We point out that, for the first time, laser harmonics have been applied in the optical characterization of materials as a new and suitable alternative to synchrotron radiation. Received: 9 January 2001 / Accepted: 28 April 2001 / Published online: 20 June 2001     

An alternative interpretation of the optical spectra for Fe-doped KTaO3 crystals

In this paper, the excitation spectrum and luminescence at 14 569, 17 225, 18 829 and 14 659 cm^-1 for Fe³⁺ ion at the K⁺ site of KTaO₃ crystals are assigned, respectively, to the ⁶A₁(S)→⁴T₁(G), ⁴T₂(G), ⁴E₁(G)[⁴A₁(G)] and ⁴T₁(G)→⁶A₁(S) transitions rather than to the ⁶A₁(S)→⁴T₁(G), ²T₂(I), ⁴T₂(G) and ⁴T₁(G)→⁶A₁(S) transitions given in a previous paper [Bryknar et al., Radiat. Eff. Def. Solids 149(1999)51]. On the basis of this assignment, the reasonable optical spectrum parameters (in particular, the cubic field parameter Dq≈−640 cm⁻¹) are obtained. The validity of this assignment is discussed.     

Effect of ambient hydrogen sulfide on the physical properties of vacuum evaporated thin films of zinc sulfide

Evaporated thin films of zinc sulfide (ZnS) have been deposited in a low ambient atmosphere of hydrogen sulfide (H₂S ∼10⁻⁴ Torr). The H₂S atmosphere was obtained by a controlled thermal decomposition of thiourea [CS(NH₂)₂] inside the vacuum chamber. It has been observed that at elevated substrates temperature of about 200 °C helps eject any sulfur atoms deposited due to thermal decomposition of ZnS during evaporation. The zinc ions promptly recombine with H₂S to give better stoichiometry of the deposited films. Optical spectroscopy, X-ray diffraction patterns and scanning electron micrographs depict the better crystallites and uniformity of films deposited by this technique. These deposited films were found to be more adherent to the substrates and are pinhole free, which is a very vital factor in device fabrication.