Spectroscopic properties of Ce doped silica annealed at different temperatures

Ce³⁺-doped silica was synthesized by sol-gel technique. The absorption band at 252 nm of Ce³⁺-doped silica is close to the main absorption band of Ce(NO₃)₃ solution. Three different luminescence bands were observed in the samples annealed at temperatures from 100 to 1200 °C, and the intensity of these luminescence bands changed with the alteration of the heat-treating temperatures. In addition to two well-known main luminescence bands of 4f-5d transition of Ce³⁺ with the wavelength at 357 and 450 nm, a rarely reported luminescent band with the wavelength at 344 nm was also observed, which was attributed to some kind of oxygen-related defects of silica.     

Elaboration and characterization of organic–inorganic quantum wells impregnated on porous anodic alumina nanostructures

An organic–inorganic quantum well embedded on porous anodic alumina was synthesized and studied by MEB, AFM, optical absorption and photoluminescence. The morphology determined by the MEB and the AFM, shows that the size of the pores is about 10 nm for alumina evaporated on glass substrate and about 35 nm for alumina template prepared in sulfuric acid (H₂SO₄). The optical properties are characterized from absorption and photoluminescence spectra measured at room and low temperature. The measured spectral characteristics demonstrate the influence of the pore size on the emission of the organic–inorganic quantum well ((C₁₂H₂₅NH₃)₂PbI₄). An obvious blueshifted photoluminescence (PL) of (C₁₂H₂₅NH₃)₂PbI₄ in nanometer-sized pores was observed. It results in a better quantum confinement.     

Optical properties of TiO2 anatase - Carbon nanotubes composites studied by cathodoluminescence spectroscopy

Luminescence spectra obtained by electron bombardment (cathodoluminescence, CL) on TiO₂ (anatase)/carbon nanotubes (CNT) composite, show only one visible band at 498 nm, while the spectra taken from pure anatase samples show two bands at 498 and 545 nm. We demonstrate that the visible luminescence bands are originated by TiO₂ surface defects due to oxygen vacancies, and that this luminescence signal is independent of TiO₂ mineral form (anatase or rutile). Moreover we obtain that the 545 nm band quenching in TiO₂/CNT composites is caused by empty oxygen vacancies (OV) related to oxygen given from oxygen-rich pristine powder of carbon nanotubes. Our conclusions are also supported by X-ray photoelectron spectroscopy (XPS), SEM analysis and energy dispersed X-ray measurements (EDX). Furthermore we can confirm that the NIR TiO₂ luminescence emission is linked only to the presence of Ti rutile form as described in several works in literature.     

Multi-peak behavior of photoluminescence of silica particles heat-treated in hydrogen at elevated temperature

Pure nano-partical silica was prepared by sol-gel method, and then was treated in a H₂ ambient at different temperatures. The surface structure and valence bonding of samples were analyzed with IR spectrum and X-ray induced photoelectron spectroscopy, respectively. Its photoluminescence property was studied with fluorescence spectroscopy. The results showed that only one luminescence band at 344 nm exists for silica heat-treated at 450 °C. Silica samples heat-treated at higher temperatures showed completely different luminescence comparing with the samples heat-treated at lower temperatures. Multi-peaks were found in the SiO₂ samples heat-treated at temperatures higher than 700 °C, in which the luminescence peaks at about 379 and 392 nm are similar with the β bands in silica glass originated from the same defect center of two-fold coordinated silicon atoms, and the luminescence bands at about 493 and 528 nm are few reported. The intensity of the luminescence bands increase with the increase of heat treatment temperature from 700 to 900 °C.     

Optical spectroscopy of heavily Ho-doped BaY2F8 crystals

The ultraviolet, visible, and near IR (0.8-2.4 μm) luminescence spectra of BaY₂F₈ single crystals heavily doped with Ho³⁺ ions (10 and 30 mol%) have been investigated at room temperature and 12 K, together with the luminescence decay curves (up to 300 μs) of the visible emission. Excitation in the visible region gives rise to very strong emission bands originating from the first ⁵I₇ level and located around 2070 nm. However the ⁵I₇ emission is not observed upon excitation at wavelengths shorter than 300 nm. The inter-ionic processes are found to shorten the decay times of the levels emitting in the visible region with respect to the corresponding radiative lifetimes.     

Infrared electroluminescence from a Si MOS structure with Ge in the oxide

We report on room-temperature infrared electroluminescence (EL) from metal-oxide-semiconductor devices made from Si. We compare the luminescence from RF sputtered oxide films containing SiO₂ with and without Ge by using a composite target and luminescence from a SiO₂ layer made by rapid thermal oxidation. The sputtered films were annealed in the temperature range 600-900 °C. This densifies the films and is likely to reduce the concentration of defects. A luminescence peak located around 1150-1170 nm is observed at current densities as low as 0.1 A/cm². The corresponding photon energy is close to that of the Si band gap. In addition, we observe several broad luminescence bands in the range 1000-1750 nm. These bands get stronger with Ge in the SiO₂ film. Some of these bands have previously been suggested and are directly associated with Ge. Since we observe that the intensity is correlated with the presence of Ge while the mere presence of the bands is not, we discuss the EL bands being due to defects which concentration is influenced by Ge in the oxide.     

Luminescence properties of spark-processed Si in air, O2, and N2 with low pressure

This paper reports the luminescence properties of spark-processed Si (sp-Si) prepared with different atmospheres such as air, O₂, and N₂ in low vacuum range (50-760 Torr). Three main luminescence bands are observed from spark-processed Si (sp-Si). In addition to the well-known two luminescence bands in the blue/violet peaking at 410 nm and green peaking at 500 nm, a novel UV luminescence band is detected for the sp-Si prepared in N₂. The temperature dependence of photoluminescence (PL) characteristics of the newly detected UV luminescence band is examined. Further studies of photoluminescence excitation (PLE) have been performed and origins of luminescence are discussed based on the experimental results.     

Influence of proton irradiation on the photoluminescence spectra of zinc oxide modified by ZrO2 and ZrO2·Y2O3 nanopowders

ZnO powder photoluminescence spectra at 360-660 nm modified and unmodified by ZrO₂, ZrO₂Y₂O₃ nanopowders before and after 100 keV proton irradiation were investigated. It was found that introduction of nanoparticles led to ultraviolet band intensity decrease and to visual spectrum band intensity increase. Extinction of intensity occurs under the effect of protons in both bands of luminescence. Decomposition of spectra into elementary defects and analysis of their area change during modification and irradiation were carried out.     

Localization of nonequilibrium current carriers close to Cr ions in ZnSe:Cr single crystals

The photoluminescence (PL) of Cr-doped ZnSe single crystals is investigated in a temperature interval from 83 up to 297 K and in a wavelengths region from 440 up to 2700 nm. The doping was carried out during a high-temperature annealing of ZnSe crystals in CrSe vapors and in chrome chlorides medium. It is revealed that the doping results in an appearance of both luminescence bands located at 0.54, 0.97, and 2.15 μm and edge luminescence bands located at 454, 457, and 460 nm at 83 K. It is shown that the PL bands located at 457 and 460 nm are caused by the radiative recombination with the participation of holes located on hydrogen-like orbits close to Cr⁺ centers, having a binding energy of 99 meV. The excitons bound with centers responsible for the radiation located at 0.54 μm and having a binding energy of 65-68 meV are considered. The energy of a lattice relaxation at recharge of centers responsible for green radiation is estimated and equals 40-170 meV.     

KBaPO4:Ln (Ln=Eu, Tb, Sm) phosphors for UV excitable white light-emitting diodes

This letter reports the novel three emission bands based on phosphate host matrix, KBaPO₄ doped with Eu²⁺, Tb³⁺, and Sm³⁺ for white light-emitting diodes (LEDs). The phosphors were synthesized by solid-state reaction and thermal stability was elucidated by measuring photoluminescence at higher temperatures. Eu²⁺-doped KBaPO₄ phosphor emits blue luminescence with a peak wavelength at 420 nm under maximum near-ultraviolet excitation of 360 nm. Tb³⁺-doped KBaPO₄ phosphor emits green luminescence with a peak wavelength at 540 nm under maximum near-ultraviolet excitation of 370 nm. Sm³⁺-doped KBaPO₄ phosphor emits orange-red luminescence with a peak wavelength at 594 nm under maximum near-ultraviolet excitation of 400 nm. The thermal stabilities of KBaPO₄:Ln (Ln=Eu²⁺, Tb³⁺, Sm³⁺), in comparison to commercially available YAG:Ce³⁺ phosphor were found to be higher in a wide temperature range of 25-300 °C.     

Synthesis and photoluminescence of single-crystal GaN nanorods prepared by sol-gel method

A new method was applied to prepare GaN nanorods. In this method, gallium oxide (Ga₂O₃) gel was firstly formed by a sol-gel processing using gallium ethanol, Ga(OC₂H₅)₃, as a new precursor. GaN nanorods were successfully synthesized after annealing of the Ga₂O₃ gel at 1000 °C for 20 min in flowing ammonia. The as-prepared nanorods were confirmed as single crystalline GaN with wurtzite structure by X-ray diffraction (XRD), selected-area electron diffraction (SAED) and high-resolution transmission electron microscopy (HRTEM). Transmission electron microscopy (TEM) displayed that the GaN nanorods were straight and smooth, with diameters ranging from 200 nm to 1.8 μm and lengths typically up to several tens of microns. When excited by 280 nm light at room temperature, the GaN nanorods had a strong ultraviolet luminescence peak located at 369 nm and a blue luminescence peak located at 462 nm, attributed to GaN band-edge emission and the existence of the defects or surface states, respectively.     

Upconversion luminescence and kinetics in Er:YAlO3 under 652.2 nm excitation

Ultraviolet and visible upconversion properties of Er³⁺ in YAlO₃ were investigated following 652.2 nm excitation of the multiples ⁴F_9/2. The luminescence and excitation spectra were recorded. Ultraviolet (326-342 and 354-359 nm), violet (405-420 nm), blue (436-442 nm) and green (525-575 nm) upconversion and infrared downconversion luminescence were simultaneously observed. The intense green luminescence corresponds to the emissions from the thermal coupled ⁴S_3/2 and ²H_11/2 bands and ²G_9/2 level. Energy transfer upconversion processes were proposed to explain the upconversion phenomena. The luminescence kinetics was discussed in detail by the analyses of fluorescence decay curves.     

Photoluminescence properties of heat-treated porous alumina films formed in oxalic acid

Photoluminescence and optical properties of as-anodized and heat-treated at 500 °C porous alumina films formed in a 0.3 M oxalic acid at 40 V have been studied. The FTIR indicates that the oxalate ions are embedded in the anodic alumina as chelating bidentate structures and further heating up to 500 °C does not cause any change in ion coordination. The results of time-resolved spectroscopy show the presence of two luminescence centers both in the as-anodized and heat-treated anodic alumina films with lifetimes of about 0.25 and 4.0 ns. The F⁺-centers in anodic alumina are responsible for the luminescence peak at about 420 nm, with a lifetime of about 4.0 ns. The luminescence peak at about 480 nm, with lifetime of about 0.25 ns, can be attributed to the luminescence of carboxylate ions existing in bulk of anodic alumina.     

The effect of P2O5 on the ultra broadband near-infrared luminescence from bismuth-doped SiO2-Al2O3-CaO glass

The effect of P₂O₅ on infrared luminescence properties of bismuth-doped SiO₂-Al₂O₃-CaO (SAC) glass was investigated. Under excitation of 690 and 808 nm LD, two infrared emissions from bismuth ions central at 1100 and 1300 nm were observed, respectively. The addition of P₂O₅ was not only found to lead to the increase of full width at half maximum (FWHM) of two infrared emissions, but also result in intensity variety of the infrared emissions. The intensity of the infrared emission located at 1300 nm is reduced by a factor of 2, while the luminescence at 1110 nm is increased by a factor of 5. We propose that the infrared emissions at 1100 and 1300 nm may originate from different valence Bi ion in glasses. Compared with emission at 1300 nm, the infrared emissions at 1100 nm is more possibly from the transition of lower valent Bi ion.     

Luminescence of Ce and Pr doped Sr2Mg(BO3)2 under VUV-UV and X-ray excitation

This report presents the luminescence properties of Ce³⁺ and Pr³⁺ activated Sr₂Mg(BO₃)₂ under VUV-UV and X-ray excitation. The five excitation bands of crystal field split 5d states are observed at about 46 729, 44 643, 41 667, 38 314 and 29 762 cm⁻¹ (i.e. 214, 224, 240, 261 and 336 nm) for Ce³⁺ in the host lattice. The doublet Ce³⁺ 5d→4f emission bands were found at about 25 840 and 24 096 cm⁻¹ (387 and 415 nm). The influence of doping concentration and temperature on the emission characteristics and the decay time of Ce³⁺ in Sr₂Mg(BO₃)₂ were investigated. For Pr³⁺ doped samples, the lowest 5d excitation band was observed at about 42017 cm⁻¹ (238 nm), a dominant band at around 35714 cm⁻¹ (280 nm) and two shoulder bands were seen in the emission spectra. The excitation and emission spectra of Ce³⁺ and Pr³⁺ were compared and discussed. The X-ray excited luminescence studies show that the light yields are ∼3200±230 and ∼1400±100 photons/MeV of absorbed X-ray energy for the samples Sr_1.86Ce_0.07Na_0.07Mg(BO₃)₂ and Sr_1.82Pr_0.09Na_0.09Mg(BO₃)₂ at RT, respectively.     

Synthesis process and the luminescence properties of rare earth doped NaLa(WO4)2 nanoparticles

Rare earth doped NaLa(WO₄)₂ nanoparticles have been prepared by a simply hydrothermal synthesis procedure. The X-ray diffraction (XRD) pattern shows that the Eu³⁺-doped NaLa(WO₄)₂ nanoparticles with an average size of 10-30 nm can be obtained via hydrothermal treatment for different time at 180 °C. The luminescence intensity of Eu³⁺-doped NaLa(WO₄)₂ nanoparticles depended on the size of the nanoparticles. The bright upconversion luminescence of the 2 mol% Er³⁺ and 20 mol% Yb³⁺ codoped NaLa(WO₄)₂ nanoparticles under 980 nm excitation could also be observed. The Yb³⁺-Er³⁺ codoped NaLa(WO₄)₂ nanoparticles prepared by the hydrothermal treatment at 180 °C and then heated at 600 °C shows a 20 times stronger upconversion luminescence than those prepared by hydrothermal treatment at 180 °C or by hydrothermal treatment at 180 °C and then heated at 400 °C.     

Growth, thermal and spectroscopic characterizations of BaNd2(MoO4)4 crystal

A new crystal, BaNd₂(MoO₄)₄, has been grown from the flux melt based on Li₂Mo₃O₁₀ by a spontaneous nucleation method. The phase structure of the obtained crystals was determined by X-ray powder diffraction. The result shows that the as-grown crystals are well crystallized and indexed in a monoclinic crystal system with space group B2/b. The specific heat of BaNd₂(MoO₄)₄ crystal at 20 °C is 0.485 J/g K. Absorption and fluorescence spectra were also measured at room temperature. There are several strong and broad absorption peaks from 200 to 1200 nm and three emission transition bands located at 890, 1060, and 1334 nm are detected.     

Photoluminescence studies of NaCaPO4:RE (RE=Dy, Mn or Gd)

The purpose of the present study is to develop an understanding of photoluminescence properties of Dy³⁺, Mn²⁺ or Gd³⁺doped NaCaPO₄ phosphors, which have served as efficient phosphors in many industrial applications. The phase formation was confirmed by the X-ray powder diffraction (XRD) measurement. Photoluminescence (PL) excitation spectrum measurement of NaCaPO₄:Dy³⁺ shows this phosphor can be efficiently excited by near-ultraviolet (UV) light from 300 to 400 nm and presents dominant luminescence band centered at 480 nm (blue) and 573 nm (yellow). The PL excitation of NaCaPO₄:Mn²⁺ and Gd³⁺ under UV wavelength shows the emissions at 520 and 313 nm, respectively. A scanning electron microscope (SEM) shows an average crystallite size in sub-micrometer range. The obtained results show that the phosphors have the potential for application in the lamp industry and medical applications.     

The luminescent properties of CaYBO4:Ln(Ln=Eu, Tb) under UV-VUV range

The luminescent properties of CaYBO₄:Ln(Ln=Eu³⁺, Tb³⁺) were investigated under ultraviolet (UV) and vacuum ultraviolet (VUV) region. The CT band of Eu³⁺ at about 245 nm blue-shifted to 230 nm in VUV excitation spectrum; the band with the maximum at 183 nm was considered as the host lattice absorption. For the sample of CaYBO₄:0.08Tb³⁺, the bands at about 235 and 263 nm were assigned to the f-d transitions of Tb³⁺ and the CT band of Tb³⁺ was calculated according to Jφrgensen's theory. Under UV and VUV excitation, the main emission of Eu³⁺ corresponding to the ⁵D₀-⁷F₂ transition located at about 610 nm and two intense emission of Tb³⁺ from the ⁵D₄-⁷F₅ transition had been observed at about 542 and 552 nm, respectively. With the incorporation of Gd³⁺ into the host lattice of CaYBO₄, the luminescence of Tb³⁺ was enhanced while that of Eu³⁺ was decreased because of their different excitation mechanism.     

Luminescence of ZnWO4 and CdWO4 thin films prepared by spray pyrolysis

Thin films of ZnWO₄ and CdWO₄ were prepared by spray pyrolysis and the structural, optical, and luminescence properties were investigated. Both ZnWO₄ and CdWO₄ thin films showed a broad blue-green emission band. The broad band of ZnWO₄ films was centered at 495 nm (2.51 eV) consisted of three bands at 444 nm (2.80 eV), 495 nm (2.51 eV) and 540 nm (2.30 eV). The broad band of CdWO₄ films at 495 nm (2.51 eV) could be decomposed to three bands at 444 nm (2.80 eV), 495 nm (2.51 eV) and 545 nm (2.28 eV). These results are consistent with emission from the WO₆⁶⁻ molecular complex. The luminance and efficiency for ZnWO₄ film at 5 kV and 57 μA/cm² were 48 cd/m² and 0.22 lm/w, respectively, and for CdWO₄ film the values were 420 cd/m² and 1.9 lm/w.