Photoluminescence of Eu in SrGa2S4

A photoluminescence (PL) study of the green-emitting SrGa₂S₄:Eu²⁺ phosphor is reported. Diffuse reflectance, excitation, and emission spectra were examined with the aim to enlarge the fundamental knowledge about the emission of the Eu²⁺ ion in this lattice. The thermal dependence of the radiative properties was investigated. In particular, the Stokes shift, the crystal field splitting and the activation energy of the thermal quenching were determined. By combining these results with the information presented in literature, we discussed the location of the Eu²⁺ levels relative to the valence and conduction bands of SrGa₂S₄.     

Synthesis and properties of submicron range CaSO4:Eu particles

CaSO₄:Eu with particle size in submicron range was synthesized. Radiation induced Eu³⁺↔Eu²⁺ conversion as well as thermal conversion was studied. The samples showed thermal conversion above 400 °C. However, no radiation induced conversion in submicron range particles was observed. Particles heated above 400 °C coalesce and when heated at 925 °C bigger particles of 20 μm size were formed. Optical microscopy of these particles reveals red inclusion of about 5 μm inside CaSO₄ particle. It is speculated that the red inclusion is CaS:Eu²⁺.     

Synthesis, characterization and optical spectroscopy of Eu doped titanate nanotubes

The synthesis of Eu³⁺ doped titania nanotubes was carried out via a hydrothermal method. X-ray diffraction and transmission electron microscope analyses showed that the nanotubes were formed by rolling multilayered titania structure with a length of up to 100 nm. The Eu³⁺-doped nanotubes exhibited strong emission lines associated with the ⁵D₀→⁷F_J (with J from 1 to 4) transition of Eu³⁺ and the differences between the luminescence properties of the precursor powders and the nanotubes were studied at low temperature.     

Luminescence spectroscopy of Eu in Ca3Sc2Si3O12

Ca₃Sc₂Si₃O₁₂ doped with 1 mol% Eu³⁺ and having a cubic garnet structure was prepared by a solid state reaction. The low temperature luminescence spectrum shows no measurable ⁵D₀→⁷F₀ band, in agreement with the location of the lanthanide dopant in a site of D₂ symmetry, i.e. with a Ca²⁺ substitution. On the other hand, the spectrum is clearly dominated by the ⁵D₀→⁷F₄ band, which is significantly stronger than that for the other transitions originating from the ⁵D₀ level. This unusual behavior is explained on the basis of a model describing the distortion of the EuO₈ coordination polyhedron from a cubic geometry to the actual D₂ one.     

Ultrashort-laser-pulse-induced persistent spectral hole burning of Eu(3+) in sodium borate glasses

We have observed persistent spectral hole burning (PSHB) in Eu(3+) -doped sodium borate glasses irradiated with near-IR femtosecond laser pulses. As-prepared glasses, i.e., glasses melted in air, do not show PSHB even at low temperatures (~77K) , but room-temperature PSHB occurs in the irradiated glasses. The exposure to IR radiation causes both the reduction of Eu(3+) to Eu(2+) and the formation of intrinsic defects. We propose that the photoinduced redistribution of electric charges between Eu(3+) to Eu(2+) is responsible for the occurrence of PSHB.     

Room-temperature persistent spectral hole burning of Eu(3+) in sodium aluminosilicate glasses

Persistent spectral hole burning has been observed at 77 K, 180 K, and room temperature for Eu(3+) in sodium aluminosilicate glass melted under a reducing atmosphere. In particular, room-temperature persistent spectral hole burning is reported for the first time to our knowledge in Eu(3+) -doped materials. The persistent hole is accompanied by no antiholes and lasts for 1 h at least. The thermal stability of the hole is greater than that of a persistent hole burned for Eu(3+) in sodium aluminosilicate glass melted in air.     

An efficient and stable green phosphor SrBaSiO:Eu for light-emitting diodes

Eu²⁺-activated strontium–barium silicate, SrBaSiO₄:Eu²⁺, which is an intermediate phase between Sr₂SiO₄ and Ba₂SiO₄, was synthesized by a solid-state reaction. The synthesized phosphor was efficiently excited by a broad spectral range of near UV between 300 and 450 nm, and exhibited a strong and wide green emission. As the doped Eu²⁺ concentration increased from 0.005 to 0.18 (molar ratio), the emission wavelength shifted from 509 to 521 nm, and this red-shift phenomenon was discussed through a band-gap model. The concentration quenching mechanism was calculated to be a dipole–quadrupole interaction. It showed good thermal stability with T_1/2 of 170 °C and high internal quantum efficiency (78%). A green LED was fabricated with SrBaSiO₄:Eu²⁺and a 395 nm-emitting InGaN chip and it showed a superior current tolerant property. All the results indicate that this phosphor is a good candidate as green component in fabrication of phosphor-converted white LEDs.     

Emission properties of Eu, Mn in MAl2Si2O8 (M=Sr, Ba)

The emission properties of Eu²⁺ and Mn²⁺ in monoclinic SrAl₂Si₂O₈ (M-SAS) and hexagonal BaAl₂Si₂O₈ (H-BAS), both of which have only one alkaline-earth site, were studied. The emission peaks of both Eu²⁺ (405 nm) and Mn²⁺ (564 nm) in SrAl₂Si₂O₈, are located at longer wavelengths, compared with those in H-BAS (373 nm for Eu²⁺ and 518 nm for Mn²⁺), because of the stronger crystal field strength at the Sr site. EPR spectra showed that the g values of Mn²⁺ are 4.5065 in M-SAS:Mn and 2.0247 in H-BAS:Mn. Magnetic measurements proved that Mn²⁺ was at high-spin state in both hosts. The large g value of Mn²⁺ in M-SAS was ascribed to the mixing of the first excitation state to the ground state, both of which have lower d orbital degeneracy due to the lower symmetry of Mn²⁺ site. The transfer efficiency from Eu²⁺ to Mn²⁺was about 10% in M-SAS, higher than that in H-BAS (5%). This was probably because Eu²⁺ emission overlaps the relatively low excitation level of Mn²⁺ in M-SAS. In order to obtain high transfer efficiency, it was necessary for the Eu²⁺ emission to overlap the lowest excitation level of Mn²⁺. The results obtained in this work may be helpful to design the new white or red phosphors for white-light emitting diode (w-LED) applications.     

Effect of cation mixing on luminescence of Eu in SrCl2

SrCl₂ forms solid solutions of various compositions with BaCl₂ and CaCl₂. Orthorhombic and tetragonal phases are also known to occur in the SrCl₂-CaCl₂ system. Though efficient emission of Eu²⁺ in SrCl₂ and CaCl₂ is known, there are no reports available on Eu²⁺ luminescence in the solid solutions and other phases. Investigations on these lines were carried out and the results are presented in this paper. Very intense emission comparable to that of the commercial lamp phosphors was observed for the solid solutions while the intensities for the orthorhombic and tetragonal phases are an order of magnitude smaller. Emission wavelengths do not vary much while excitation spectra for the solid solutions are much enhanced in the near UV region (350-400 nm). It is suggested that these results will be significant for developing phosphors with near UV excitations needed in applications such as solid state lighting.     

Some studies of BF2 and B+F implanted Silicon

Ion-implanted shallow junctions have been investigated using BE₂ (molecular ions) by the anodic oxidation method coupled with a four-point probe technique. BF₂ ions were implanted through screen oxide at doses of 3–5 × 10¹⁵ ions/cm² and energies of 25 and 45 keV which is equivalent to 5.6 keV and 10 keV of boron ions. The effect of energy, dose and annealing temperature on shallow junctions is presented in this paper. The shallow junctions in the range of 0.19 μm to 0.47 μm were fabricated.

The effect of fluorine on sheet resistivity of boron implanted silicon at various doses, treated with two-step and three-step annealing, is also presented for comparison in the paper.     

Europium-Activated Orthophosphate Phosphors For Energy-Efficient Solid-State Lighting: A Review

As a new class of inorganic phosphor, orthophosphate phosphors materials have received great interest because of their potential applications in solid-state lightings and displays. In this article, we focus on current developments in the synthesis, crystal structure and luminescence properties of orthophosphate phosphors for solid-state lightings. We discuss the synthesis of a family of orthophosphate phosphor doped with europium (Eu²⁺ and Eu³⁺) by traditional and novel methods. In the fluorescent lamp, phosphor materials convert UV radiation into visible radiation. Lamp phosphors are mostly white in color and they should not absorb the visible radiation. New phosphors that can absorb excitation energy from blue or near ultraviolet (n-UV) LEDs and generate visible emissions efficiently are desired. The criteria of choosing the best phosphors, for blue (450–480 nm) and n-UV (380–400 nm) LEDs, strongly depends on the absorption and emission of the phosphors. Here, we will review the status of phosphors for solid-state lightings and prospect the future development. The impacts of doping of europium and photoluminescence properties on orthophosphate phosphors were investigated and we propose a feasible interpretation.     

Novel room temperature ionic liquid for fluorescence enhancement of Eu and Tb

The newly prepared ionic liquid, 1-butyl-3-methylimidazolium benzoate, ([bmim][BA]), was found to enhance the fluorescence of Eu³⁺ and Tb³⁺. The fluorescence enhancement resulted from a sensitization of the lanthanide fluorescence by the benzoate anion of the ionic liquid, [bmim][BA], and a reduction in the non-radiative channels in the non-aqueous environment provided by the ionic liquid. However, the fluorescence enhancement of the lanthanides in the ionic liquid was limited due to the operation of the inner filter effect, which resulted from the strong absorption of the benzoate. The inner filter effect was minimized by observing the Eu³⁺ fluorescence using a front face geometry and also by diluting the lanthanide-[bmim][BA] system, using another ionic liquid, 1-butyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ([bmim][Tf₂N]), as a solvent. In the case of Tb³⁺, the emission from the lanthanide was masked by the strong emission from the ionic liquid in the region 450-580 nm. The long lived Tb³⁺ emission was therefore observed using delayed gated detection, where an appropriate delay was used to discriminate against the short lived emission from the ionic liquid. The large fluorescence enhancement due to ligand sensitized fluorescence observed with [bmim][BA] diluted in [bmim][Tf₂N], leads to nanomolar detection of the lanthanides. This is, to the best of our knowledge, the first report of an ionic liquid being employed for ligand sensitized fluorescence enhancement of lanthanides.     

Luminescence studies on photostimulable phosphor CsBr:Eu2+

Photostimulable phosphor CsBr:Eu²⁺ is prepared through a solid-state reaction. The effect of annealing atmosphere on photoluminescence and photostimulated luminescence was investigated. Optimum luminescence intensity was obtained when samples were prepared at 350°C in air atmosphere. The effect of irradiation of gamma and neutron had resulted in the formation of optically stimulable traps with different trap depths. The role of monovalent and divalent dopants on thermoluminescence dosimetric properties has been discussed.     

Luminescence of BaBr2:Eu under hydrostatic pressure

Luminescence spectra of BaBr₂:Eu²⁺ have been measured under pressures up to 27 GPa at room temperature. In the low-pressure range a red-shift of the 5d-4f transition of −225 cm⁻¹/GPa is observed. From 3 to 10 GPa a phase mixture of the original orthorhombic phase and the high-pressure monoclinic phase gives rise to two luminescence bands. Above 10 GPa the crystal is completely transformed to its high-pressure phase where two different Eu²⁺ sites exist of which, however, only one 5d-4f transition is detected. This transition exhibits a red-shift of −200 cm⁻¹/GPa. The shifts are compared with other literature data.     

A white light emitting phosphor Sr1.5Ca0.5SiO4:Eu, Tb, Eu for LED-based near-UV chip: Preparation, characterization and luminescent mechanism

In this work, we report preparation, characterization and luminescent mechanism of a phosphor Sr_1.5Ca_0.5SiO₄:Eu³⁺,Tb³⁺,Eu²⁺ (SCS:ETE) for white-light emitting diode (W-LED)-based near-UV chip. Co-doped rare earth cations Eu³⁺, Tb³⁺ and Eu²⁺ as aggregated luminescent centers within the orthosilicate host in a controlled manner resulted in the white-light phosphors with tunable emission properties. Under the excitation of near-UV light (394 nm), the emission spectra of these phosphors exhibited three emission bands: one broad band in the blue area, a second band with sharp lines peaked in green (about 548 nm) and the third band in the orange-red region (588-720 nm). These bands originated from Eu²⁺ 5d→4f, Tb³⁺⁵D₄→⁷F_J and Eu³⁺⁵D₀→⁷F_J transitions, respectively, with comparable intensities, which in return resulted in white light emission. With anincrease of Tb³⁺ content, both broad Eu²⁺ emission and sharp Eu³⁺ emission increase. The former may be understood by the reduction mechanism due to the charge transfer process from Eu³⁺ to Tb³⁺, whereas the latter is attributed to the energy transfer process from Eu²⁺ to Tb³⁺. Tunable white-light emission resulted from the system of SCS:ETE as a result of the competition between these two processes when the Tb³⁺ concentration varies. It was found that the nominal composition Sr_1.5Ca_0.5SiO₄:1.0%Eu³⁺, 0.07%Tb³⁺ is the optimal composition for single-phased white-light phosphor. The CIE chromaticity calculation demonstrated its potential as white LED-based near-UV chip.     

Thermoluminescence spectroscopy of Eu and Mn doped BaMgAl10O17

Thermoluminescence (TL) studies of Eu²⁺ and Mn²⁺ doped BaMgAl₁₀O₁₇ (BAM) are reported and discussed. The TL spectra that are measured after irradiation with ultraviolet (120-) show a series of TL peaks between 100 and . The TL spectra are similar for BAM with the two dopants, which suggest that the shallow traps are typical for the BAM host lattice. Using the Hoogstraaten analysis trap depths between 0.1 and are determined. A model is proposed based on thermally activated recombination in local TL centres (not via the conduction band). Further support for this model is obtained from the observation that the TL signal is strongest for excitation around the band edge of BAM . Upon heating the samples in air all low temperature TL peaks decrease in intensity. In addition a new peak appears in the TL spectrum, which is connected with a deeper trap and also a partial oxidation of Eu²⁺ to Eu³⁺ is observed. The luminescence efficiency is lower and the UV induced degradation is faster after annealing in air. These results indicate that the shallow traps are related to oxygen vacancies. The shallow traps do not have a negative influence on performance (efficiency and degradation) of BAM as a lighting phosphor. The luminescence efficiency and stability are strongly influenced by the formation of Eu³⁺ and a deeper trap during annealing in air. Subsequent annealing in a reducing atmosphere restores the original properties.     

Charge states of the activator and size effects in BaF2: Eu nanophosphors

ABSTRACT

According to the spectra of stationary X-ray excited luminescence (XEL) of BaF₂: Eu nanophosphors at 80 and 294 K, it was revealed that the thermal annealing of fine-grained nanoparticles (d?=?35?nm) in the range of 400–1000°C, which is accompanied by an increase of their sizes in the range of 58–120?nm, does not result in effective changes of the charge state of Eu^{3 +} → Eu^{2 +} activator, in contrast to CaF₂: Eu nanoparticles. The maximum light output of X-ray excited luminescence of BaF₂: Eu nanophosphors in the 590?nm emission band of Eu³⁺ ion was observed at an annealing temperature of 600°C with the average size of nanoparticles 67?nm. The subsequent growth of annealing temperatures, especially in the range of 800–1000°C, causes decrease in the light output of X-ray excited luminescence due to the increase of defect concentration in the lattice as a result of sharp increase of nanoparticle sizes and their agglomeration. In BaF₂: Eu nanoparticles of 58?nm size, according to the thermostimulated luminescence (TSL) spectrum, transformation of Eu³⁺ → Eu²⁺ under the influence of long-time X-ray irradiation was revealed for the peak of 151?K. Thus, X-ray excited luminescence spectra of BaF₂: Eu nanophosphors are formed predominantly due to the emission of Eu³⁺ ions, while emission of Eu²⁺ ions is observed in the TSL spectra.     

Eu3+掺杂Gd2W2O9和Gd2（WO4）3纳米荧光粉发光性质研究

采用共沉淀法制备了不同Eu3+掺杂浓度的Gd2W2O9和Gd2(WO4)3纳米发光材料.通过对纳米材料样品的X射线衍射谱(XRD)和场发射扫描电镜(FE-SEM)照片的观察和分析,对样品的结构和形貌进行了表征.测量了各样品的发射光谱、激发光谱,计算了各样品的部分J-O参数和Eu3+5D0能级量子效率,绘制了不同基质中Eu3+发光的浓度猝灭曲线,对Eu3+掺杂的Gd2W2O9和Gd2(WO4)3纳米发光材料的光致发光性质进行了研究.实验结果证明,与较常见的Gd2(WO4)3:Eu一样,Gd2W2O9:Eu中Eu3+5D0→7F2跃迁的红色发光也能被395nm和465nm激发光有效激发,具有近紫外(蓝光)相对激发效率高,猝灭浓度大的优点,有潜力成为高效的近紫外(蓝光)激发白光LED用红色荧光粉材料.     

Combustion synthesis of Sr3MgSi2O8:Eu and Sr2MgSi2O7:Eu phosphors

Sr₃MgSi₂O₈:Eu²⁺ and Sr₂MgSi₂O₇:Eu²⁺ phosphors find uses in applications such as plasma display panel (PDP), solid-state lighting, longafter glow. Preparation of these phosphors by a modified combustion synthesis is described in this paper. As-prepared samples did not show photoluminescence. After reducing the samples at 900 °C, characteristic Eu²⁺ emission was observed. Preparation of these phosphors by using similar methods helped clarifying various results obtained for Sr₃MgSi₂O₈:Eu²⁺ by different investigators.     

Influence of high hydrostatic pressure on Eu-luminescence in KMgF3:Eu crystal

Spectroscopic investigations are presented of KMgF₃:Eu²⁺ crystal under high hydrostatic pressure from ambient to 310 kbar. The sample was excited by 30 ps pulses generated by optical parametric generator (OPG) system with wavelength controlled between 210 and 325 nm. The Grüneisen parameters of individual phonons are obtained from the pressure shift of the Eu²⁺ emission related to the ⁶P_7/2→⁸S_7/2 transition accompanied by phonon sideband. The luminescence decays exponentially for the pressure below 135 kbar with lifetime of 3.30 ms and slightly nonexponential above 135 kbar, while the average decay time is nearly independent of the pressure. The results obtained for KMgF₃:Eu²⁺ are compared with those for LiBaF₃:Eu²⁺ in which the ⁶P_7/2→⁸S_7/2 emission is replaced by the broadband emission of the 4f⁶5d¹→4f⁷ transition at high hydrostatic pressure.