A comparative study of the ionic keV X-ray line emission from plasma produced by the femtosecond,picosecond and nanosecond duration laser pulses

We report here an experimental study of the ionic keV X-ray line emission from magnesium plasma produced by laser pulses of three widely different pulse durations (FWHM) of 45 fs, 25 ps and 3 ns, at a constant laser fluence of ∼1.5 × 10⁴ J cm^− 2. It is observed that the X-ray yield of the resonance lines from the higher ionization states such as H- and He-like ions decreases on decreasing the laser pulse duration, even though the peak laser intensities of 3.5 × 10¹⁷ W cm^− 2 for the 45 fs pulses and 6.2 × 10¹⁴ W cm^− 2 for the 25 ps pulses are much higher than 5 × 10¹² W cm^− 2 for the 3 ns laser pulse. The results were explained in terms of the ionization equilibrium time for different ionization states in the heated plasma. The study can be useful to make optimum choice of the laser pulse duration to produce short pulse intense X-ray line emission from the plasma and to get the knowledge of the degree of ionization in the plasma.     

Excitation of X rays by electrons accelerated in air in the wake wave of a laser pulse

The characteristics of X rays of a laser plasma generated in the interaction of a femtosecond pulse with solid targets in an air atmosphere have been investigated. It has been shown that the mechanism for the generation of X rays in the interaction of short intense laser pulses with solid targets in a gas atmosphere is attributed to the generation of fast electrons in the region of the filamentation of a laser pulse. It has been proven experimentally that under such conditions, the solid target irradiated by laser radiation of even a low density of about 10¹⁵ W/cm² very efficiently emits ∼10-keV photons. It has been shown theoretically that the maximum energy of accelerated electrons can reach ɛ_max ∼ 100–200 keV under these conditions. This means that the proposed method can provide characteristic radiation with the energy of photons much higher than 10 keV.     

Generation of tunable picosecond light pulses covering the frequency range between 2700 and 32,000 cm−1

The travelling-wave parametric process allows the generation of intense picosecond pulses tunable between 2700 and 17,000 cm⁻¹. Angle- and temperature tuning was investigated using LiNbO₃ crystals of different cuts. Various factors determining the bandwidth of the new pulses are evaluated and experimental spectra are presented. Frequency doubling readily leads to light pulses up to 32,000 cm⁻¹. The jitter of two parametric systems operating in parallel is less than 1 ps for pump pulses of 7 ps.     

Pulsed laser treatment of gold and black gold thin films fabricated by thermal evaporation

The effect of pulsed laser treatment of metal, and metal blacks, was studied. Gold and black gold thin films were fabricated by thermal evaporation of gold in a vacuum and nitrogen atmosphere respectively. Black gold films were grown in a nitrogen atmosphere at pressures of 200 Pa and 300 Pa. UV pulsed laser radiation (λ = 266 nm, τ = 4 ns), with fluence ranging from 1 mJ·cm⁻² to 250 mJ·cm⁻² was used for the film treatment in a vacuum and nitrogen atmosphere. The nitrogen pressure was varied up to 100 kPa. Surface structure modifications were analyzed by optical microscopy, atomic force microscopy (AFM) and scanning electron microscopy (SEM). Energy dispersive X-ray spectroscopy (EDX) was used for chemical characterization of the samples. A significant dependence of the film optical and structural properties on laser treatment conditions (laser fluence, ambient pressure and number of applied pulses) was found. The threshold for observable damage and initiation of changes of morphology for gold and black gold surfaces was determined. Distinct modifications were observed for fluences greater than 106 mJ·cm⁻² and 3.5 mJ·cm⁻² for the gold and black gold films respectively. Absorbtivity of the black gold film is found to decrease with an increase in the number of laser pulses. Microstructural and nanostructural modifications after laser treatment of the black gold film were observed. EDX analysis revealed that no impurities were introduced into the samples during both the deposition and laser treatment.      

Influence of laser pulse width on absolute EUV-yield from Xe-clusters

Using 50 fs ( ∼ 2×10¹⁸ W/cm²) and 2 ps ( ∼ 5×10¹⁶ W/cm²) pulses from a Ti:Sa multi-TW laser at 800 nm wavelength large Xe-clusters ( 10⁵...10⁶ atoms per cluster) have been excited. Absolute yield measurements of EUV-emission in a wavelength range between 10 nm and 15 nm in combination with cluster target variation were carried out. The ps-laser pulse has resulted in about 30% enhanced and spatially more uniform EUV-emission compared to fs-laser excitation. Circularly polarized laser light instead of linear polarization results in enhanced emission which is probably caused by electrons gaining higher energies by the polarization dependent optical field ionization process. An absolute emission efficiency at 13.4 nm of up to 0.8% in 2π sr and 2.2% bandwidth has been obtained. Received 11 January 2001 and Received in final form 27 March 2001     

Limited volume thin film deposition on geometrically complicated substrates

In this paper we report a study on the elastic scattering of electrons by lithium and sodium atoms in the presence of circularly polarized resonant laser field within the framework of the two-state rotating wave approximation. The effect of laser on projectile electrons is described by Volkov states. The frequency of the laser field is chosen to match with the 2s–3p (3s–3p) transition frequency in lithium (sodium) atoms. The total and differential elastic cross sections with single photon exchange are calculated for intermediate energies (50–150 eV) and laser intensity (10⁷–10¹¹ W cm^-2). An erratum to this article can be found online at http://dx.doi.org/. An erratum to this article can be found at     

XUV generation from plasma produced by a XeCl excimer laser on a Cu target

Summary We present a detailed study of XUV and soft X-ray emission from Cu plasma produced by an excimer laser at intensitiesI _L≦8·10¹¹ W/cm². The XeCl excimer laser (ψ≈308 nm) delivers pulses with energyE _L≈2.3 J, temporal durationt _L≈100 ns and brightnessB≧10¹⁴ W/cm² sr. We recorded a spectral conversion efficiency η=0.5% eV⁻¹ forI _L=4·10¹¹W/cm² in the aluminium window at 73eV with a harder X-ray tail around ≈400eV. We also measured the dependence of X-ray signal on laser intensity and viewing angle. Experimental results have been compared with some analytical laser-plasma interaction models.     

Table-top kHz hard X-ray source with ultrashort pulse duration for time-resolved X-ray diffraction

The interaction of ultrashort laser pulses with solid state targets is studied concerning the production of short X-ray pulses with photon energies up to about 10 keV. The influence of various parameters such as pulse energy, repetition rate of the laser system, focusing conditions, the application of prepulses, and the chirp of the laser pulses on the efficiency of this highly nonlinear process is examined. In order to increase the X-ray flux, the laser pulse energy is increased by a 2nd multipass amplifier from 750 μJ to 5 mJ. By applying up to 4 mJ of the pulse energy a X-ray flux of 4×10¹⁰ Fe K _α photons/s or 2.75×10¹⁰ Cu K _α photons/s are generated. The energy conversion efficiency is therefore calculated to η _Fe≈1.4×10⁻⁵ and η _Cu≈1.0×10⁻⁵. The X-ray source size is determined to 15×25 μm². By focusing the produced X-rays using a toroidally bent crystal a quasi-monochromatic X-ray point source with a diameter of 56 μm×70μm is produced containing ≈10⁴ Fe K _α1 photons/s which permits the investigation of lattice dynamics on a picosecond or even sub-picosecond time scale. The lattice movement of a GaAs(111) crystal is shown as a typical application.     

Entrapment of inert gas ions near molybdenum surface

The thermal desorption spectra of inert gas ions (neon, argon and krypton) injected with various energies (430–1950 eV) into a polycrystalline molybdenum target with various dosages (6.4×10¹²−3.9×10¹⁴ ions/cm²) are reported. At least four different states of binding of the trapped atoms corresponding to the activation energies for desorption have been observed from the spectra. The activation energies are found to be relatively insensitive to the species of the bombarding ion, incident ion energy and the dosage. The shapes of the spectra are strongly influenced by the depth of penetration of the ions into the solid. The activation energies deduced are in good agreement with those reported for the migration of atoms and defects in molybdenum.     

Nd: YAG laser annealing of gallium-implanted silicon

A Q-switched Nd: YAG laser with a pulse duration of 20 ns was used to investigate effects of laser annealing in gallium implanted silicon. Rutherford backscattering and Hall-effect measurements were performed to evaluate the annealed layer. Differential Hall-effect measurements were carried out to obtain carrier concentration profiles after annealing. It was found that a maximum sheet carrier concentration of 8×10¹⁵ cm⁻² can be obtained for a gallium implantation of 10¹⁶ cm⁻² by laser annealing with an energy density of more than 1.0 J cm⁻². Although the peak carrier concentration was found to be 8.0×10²⁰ cm⁻³, the annealed layer showed polycrystalline structures even after annealing with an energy density up to 4J cm⁻². The annealing took place in the solid phase in this energy density range.     

Formation of amorphous carbon on melting of microcrystalline graphite by picosecond laser pulses

Observations of microcrystalline graphite subjected to picosecond laser pulses reveal the formation of a liquid phase with a subsequent transition to a uniform amorphous state of a surface layer upon solidification. This phenomenon is observed on a definite type of graphite and with the radiation incident on a plane parallel to the sixfold symmetry axis, and only for certain parameters of the laser pulse. A structural analysis of the amorphous phase is performed by electron microscopy and Raman scattering spectroscopy. A periodic structure with a period of the order of the wavelength of the heating pulse is formed in the heating region. The “rulings” of this periodic structure are oriented in the direction of polarization of the heating pulse. A study of the reflection kinetics of the probe laser pulse showed that the characteristic existence time of the liquid phase and of the solidification process is ∼10⁻¹⁰ s. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 10, 661–665 (25 November 1997)     

Nitrogen implantation in GaAs1−xPx (x=0.4; 0.65)

Nitrogen ions were implanted in GaAs_1−xP_x (x=0.4; 0.65) at room temperature at various doses from 5×10¹² cm⁻² to 5×10¹⁵ cm⁻² and annealed at temperatures from 600°C up to 950°C using a sputtered SiO₂ encapsulation to investigate the possibility of creating isoelectronic traps by ion implantation. Photoluminescence and channeling measurements were performed to characterize implanted layers. The effects of damage induced by optically inactive neon ion implantation on photoluminescence spectrum were also investigated. By channeling measurements it was found that damage induced by nitrogen implantation is removed by annealing at 800°C. A nitrogen induced emission intensity comparable to the intensity of band gap emission for unimplanted material was observed for implanted GaAs_0.6P_0.4 after annealing at 850°C, while an enhancement of the emission intensity by a factor of 180 as compared with an unimplanted material was observed for implanted GaAs_0.35P_0.65 after annealing at 950°C. An anomalous diffusion of nitrogen atoms was found for implanted GaAs_0.6P_0.4 after annealing at and above 900°C.     

X-ray emission from short-pulse laser plasmas

Highly intense picosecond and subpicosecond laser pulses interacting with solids can create hot and dense plasmas which emit x-ray pulses in a broad spectral range from 100 eV up to MeV. The duration of these x-ray pulses depends on the transient behaviour of the relaxation and recombination mechanisms, as well as on the lifetime of energetic electrons produced via nonlinear processes in the plasma. This paper reports experiments using a 1.5-ps laser pulse with high constrast ratio (up to 10¹⁰) and intensities up to 10¹⁸ W cm^-2 irradiating solid targets. Both the line spectrum characteristics of a magnesium plasma, recorded using crystal spectrometers with high spectral resolution, and kinetic calculations have allowed the deduction of plasma parameters in the process of plasma evolution. In addition, hard x-ray pulses from a tantalum plasma were measured and their scaling was explained as bremsstrahlung emission from energetic electrons. Absolute dose values of x-ray pulses are given.     

Laser surface-melting of metals studied by PAC

High purity Pt, Ni, Cu, Fe and Al metal foils were electroplated with carrier-free¹¹¹In probe atoms and melted at 293 K using 32 ns ruby laser pulses with energy densities in the range 1–10 J cm⁻². Three distinct lattice locations of the probe atoms were detected in the melted surface layers using perturbed γ-γ angular correlation spectroscopy: (i) defect-free substitutional sites, (ii) non-unique sites with broad distributions of quadrupole interactions, and (iii) a probemonovacancy complex (for Pt only). The defect-free fraction was found to approach 100% when Pt is irradiated at 9 J cm⁻². The fraction of probes on defect-free sites was found to increase with the energy density of the pulse and with the solubility of In in the metals. The data are consistent with the idea that laser surface-melting produces high concentrations of vacancies and lattice sinks, although no thermal trapping of point defects was detected. Supported in part by National Science Foundation grant DMR 86-19688 (Metallurgy Program).     

Dynamics of two-photon picosecond absorption in ZnWO<Subscript>4</Subscript> and PbWO<Subscript>4</Subscript> crystals

A method has been proposed to analyze the dynamics of interband two-photon absorption in a nonlinear medium excited by a sequence of picosecond laser pulses of variable intensity and continuous probe radiation. Induced absorption leading both to hysteresis in the dependence of the absorption on the intensity of laser pump radiation and to the opacity of crystals at the pump wavelength has been revealed in initially transparent ZnWO₄ and PbWO₄ crystals irradiated by a train of 523.5-nm pulses with a duration of 20 ps at pump intensities of 5 to 140 GW/cm². The kinetics of an increase in absorption and its subsequent relaxation at a 523.5-nm picosecond excitation of the crystals have been measured with continuous 633-nm probe radiation. An exponential component of the increase in absorption with the time constant τ = 2−3.5 and 8–9.5 μs depending on the direction of the linear polarization of pump radiation has been revealed at 300 K in ZnWO₄ and PbWO₄ crystals, respectively. The absorption relaxation kinetics in the crystals are complicated and approach an exponential at a late stage with the constant τ = 40−130 and 12–80 ms for the ZnWO₄ and PbWO₄ crystals, respectively.     

Study of 2<Emphasis Type="Italic">ω</Emphasis> and 3/2<Emphasis Type="Italic">ω</Emphasis> harmonics in ultrashort high-intensity laser plasma interaction

An experimental study is presented on measurements of optical spectrum of the laser light scattered from solid surface irradiated by Ti:sapphire laser pulses up to an intensity of 1.2 × 10¹⁸ W cm⁻². The spectrum has well-defined peaks at wavelengths corresponding to 2ω and 3/2ω radiations. The spectral features vary with the laser intensity and show blue-shift with increasing laser intensity. At a constant laser fluence, the spectrum is red-shifted with increasing laser pulse duration. The observed results are explained in terms of the density scale length variation of the plasma and laser chirp.     

High quantum yield of photochemical reactions of protoporphyrin-IX induced by powerful ultrashort laser pulses

The action of powerful pulsed picosecond radiation from a Nd: YAG laser (λ=530 nm, pulse energy: 0.01 J, intensity: 2GW/cm²) and an argon laser (λ=515 nm, power: 50 mW) on protoporphyrin-IX dimethylether in three solvents (trichlormethane, carbon tetrachloride, dioxane) has been studied. Under continuous irradiation the quantum yield and resulting products do not differ materially from the ones produced under mercury lamp irradiation. When irradiation is performed by powerful laser pulses of picosecond duration the quantum yield of photodecomposition of protoporphyrin-IX dimethylether inereases substantially: by 10 in dioxane, by 4 in carbon tetrachloride and by 100 in trichlormethane. It is assumed that a quite different mechanism of multistep excitation is responsible for photodecomposition under powerful picosecond pulses.     

CW CO2-laser annealing of arsenic implanted silicon

CW CO₂-laser annealing of arsenic implanted silicon was investigated in comparison with thermal annealing. Ion channeling, ellipsometry, and Hall effect measurements were performed to characterize the annealed layers and a correlation among the different methods was made. The laser annealing was done with power densities of 100 to 640 W cm⁻² for 1 to 20 s. It was found that the lattice disorder produced during implantation can be completely annealed out by laser annealing with a power density of 500 W cm⁻² and the arsenic atoms are brought on lattice sites up to 96±2%. The maximum sheet carrier concentration of 6×10¹⁵ cm⁻² was obtained for 1×10¹⁶ cm⁻² implantation after laser annealing, which was up to 33% higher than that after thermal annealing at 600 to 900°C for 30 min.     

Optical nutation at a Raman-active transition

Optical nutation at the Raman-active transition 6P _1/2−6P _3/2 of thallium atoms (ω _R /2πc=7793 cm ⁻¹) under resonant Raman excitation by a biharmonic picosecond pulsed field, giving rise to substantial motion of the population, is detected. Optical nutation appears as an oscillatory behavior of the energy of the anti-Stokes scattering of probe pulses, which follow with a fixed delay, as a function of the product of the energies of the excitation pulses. As a result of the dynamic Stark effect, which decreases the frequency of the transition under study, resonance excitation conditions are satisfied for negative initial detunings of the Raman excitation frequency from resonance. The Raman scattering cross section for the transition under study is estimated by comparing the experimental data with the calculations. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 1, 7–12 (10 July 1999)     

Holographic interferometry of laser produced plasmas using picosecond pulses

Interferograms have been obtained using a holographic system illuminated by picosecond pulses. The technique has been applied to a picosecond laser produced plasma, and the total number of electrons present in the plasma has been measured to be at least 5 × 10¹⁴for a laser energy of 0.1 joule.