Mass attenuation coefficients for n-type InSe, InSe:Gd, InSe:Ho and InSe:Er single crystals

Measurements have been made to determine the mass attenuation coefficients of undoped n-type InSe, and Gd, Ho, Er doped n-InSe single crystals using a Si(Li) detector in the energy region 15.746–40.930 keV X-ray energies with energy dispersive X-ray fluorescence systems. InSe, InSe:Gd, InSe:Ho and InSe:Er single crystals were grown by using the stockbarger method. The measured values are graphically compared with the theoretical ones obtained using WinXcom.     

掺杂LaF3:Er,Yb纳米颗粒的有机无机复合型平面光波导放大器的制备及增益测试

采用油酸修饰的铒镱共掺氟化镧纳米颗粒掺杂的有机-无机杂化材料做为光波导放大器的有源层,同时采用光学性质良好的甲基丙烯酸甲酯-甲基丙烯酸环氧丙酯共聚物制作光波导的上下包层,首先说明了芯层材料不能刻蚀制备传统矩形波导的原因,其次设计了一种倒眷结构的平面光波导放大器,并采用蒸镀铝掩膜、紫外光刻和反应离子刻蚀等工艺,制备出放大...     

Er,Yb:YAG微晶玻璃发光特性的研究

高温熔制Er³⁺，Yb³⁺离子掺杂CaO-Y₂O₃-Al₂O₃-SiO₂系统玻璃，并进行微晶化处理，研究了微晶玻璃中Er³⁺离子的发光及上转换发光特性，分析了微晶玻璃上转换发光机理.结果表明：原始玻璃经热处理得到了Er,Yb:YAG微晶玻璃，微晶玻璃中Er³⁺离子在室温下⁴I_13/2→⁴I_15/2跃迁产生横盖1450—1650nm区间的超宽带荧光，荧光半高宽达180nm，这可能由于YAG微晶相中Er³⁺离子与玻璃相中残留Er³⁺离子的共同发光；Er³⁺与Yb³⁺离子局域基质声子能量的降低使微晶玻璃Er³⁺离子上转换发光强度与原始玻璃相比显著提高，绿光、红光上转换荧光强度比玻璃样品分别增强约7和3倍；微晶化后Er³⁺，Yb³⁺离子局域环境发生变化也导致微晶玻璃中Er³⁺离子绿光、红光上转换发光相对强度发生变化. 关键词： 铒 镱:钇铝石榴石 微晶玻璃 荧光光谱     

Er^3＋：YAG晶体Er^3＋离子的浓度对电磁感应光透明的影响

在一个三能级模型中展示了Er^3 :YAG晶体中的Er^3 浓度对电磁感应光透明（EIT）的影响。没有耦合场时,Er^3 离子浓度在15％左右时吸收达到最大;存在共振耦合场时,Er^3 离子浓度在3％左右时透射有一个最优值。     

Effective mass and band gap of strained graphene

The effective mass of strained graphene is investigated by tight-binding and density-functional theory calculations. For graphene strained in the zigzag direction, we find a strong anisotropy in the effective mass near the gap opening, with an abrupt increase of the effective mass at the critical strain in one direction and a smooth variation perpendicular to it. There is no band-gap opening for isotropic strain, but at an expansive strain of about 28%, the lower edge of the s-band reaches the Fermi level and makes the graphene metallic.     

Influence of doping the pump-chamber material in a flashlamp pumped Er:YAG laser

The influence of the conversion of pump light of wavelengths below 400 nm into pump light with a central wavelength of 500 nm in a Europium doped quartzglass pump chamber has been investigated. The results are compared to the ones from an undoped quartzglass. The measurements resulted in a reduction of the slope efficiency by a factor of two for the doped quartzglass compared to the undoped one. Furthermore, the pump-pulse lengths around 80 μs lead to a decrease in the slope efficiency compared to pump-pulse lengths above 100 μs.     

Highly oriented crystalline Er:YAG and Er:YAP layers prepared by PLD and annealing

High quality, thick, highly oriented crystalline thin films of Yttrium Aluminum Garnet (Y₃Al₅O₁₂) and Yttrium Aluminum Perovskite (YAlO₃) doped with Erbium were prepared by pulsed laser deposition. Samples were created in vacuum or oxygen environment. Depositions were arranged at room temperature, or at high substrate temperatures ranging from 800 to 1100 °C. Amorphous layers were annealed by laser, or in oven (argon flow, temperatures in range from 1200 to 1400 °C). Fused silica and sapphire (0 0 0 1) were used as substrates. Properties of films were characterized by X-ray diffraction, atomic force microscopy, and by photoluminescence measurement. Size of crystalline grains was in the range 116-773 nm. Thickness of layers was up to 17 μm.     

Er：YLF晶体中Er^3＋离子的光谱特征

利用居地－奥非脱（Ｊｕｄｄ－Ｏｆｅｌｔ）理论计算了Ｅｒ＾３＋离了在氟化钇锂（ＬｉＹＦ４简写为ＹＬＦ）晶体中的辐射跃迁几率Ａｊｊ无辐射跃迁几率ωＪＪ及激发态荧光寿命τ，并根据荧光动力学方程计算出各激发态布居数ＮＪ与掺杂浓度ｘ的关系，对２．７μｍ激光（＾４Ｉ１１／２→＾４Ｉ１３／２）来说，掺杂浓度要大于～３ａｔ％，才能实现布居数反转，对波长为１．７３μｍ的＾４Ｉ１３／２→＾４Ｉ１５／２跃迁，存在荧光强     

Robust hollow devices and waveguides for Er:YAG laser radiation

Fluorocarbon-polymer (FCP) coated silver hollow stainless steel (St) devices and waveguides have been developed for Er:YAG laser radiation. Full liquid phase techniques have been adopted to coat the silver and FCP layers inside the stainless steel hollow structure. Both straight and bent robust hollow devices have been fabricated as the output optical elements for the delivery system of medical Er:YAG lasers. A robust hollow waveguide with the length of about 1.6 m has also been realized as an actual delivery system.     

Optical spectroscopy of Er:YSGG laser crystal

Er:YSGG single crystals with good optical quality were grown by Czochralski method. X-ray diffraction (XRD) measurements show that the crystal lattice parameters of the 30 at.% Er³⁺-doped YSGG crystal were a=b=c=12.4640±0.0065 Å, α=β=γ=90°. The doping concentration of Er³⁺ in YSGG was calculated. The absorption spectrum and photoluminescence spectra of Er:YSGG crystal were studied at room temperature. Based on Judd-Ofelt (J-O) theory, the J-O intensity parameters Ω_t (t=2, 4, 6), the experimental and theoretical oscillator strengths were calculated using the absorption spectrum. The intensity parameters Ω_t (t=2,4,6) obtained to be Ω₂=0.23×10⁻²⁰ cm², Ω₄=0.86×10⁻²⁰ cm², Ω₆=0.37×10⁻²⁰ cm², respectively. With these intensity parameters, the line strengths, oscillator strengths, transition probabilities, fluorescence branching ratios and radiation lifetimes were calculated. The photoluminescence spectra and excitation spectrum of Er:YSGG were measured and studied.     

Electronic band structure calculation of GaNAsBi alloys and effective mass study

Electronic band structures of GaN_xAs_1−x−yBi_y dilute nitrides–bismides have been determined theoretically within the framework of the band anticrossing (BAC) model and k ⋅ p method. We have developed computer codes based on our extended BAC model, denoted (16 × 16), in which the dimension of the used states basis was equal to 16. We have investigated the band gap and the spin orbit splitting as a function of Bi composition for alloys lattice matched to GaAs. We have found that the substitution of As element by N and Bi impurities leads to a significant reduction of band gap energy by roughly 198 meV/%Bi. Meanwhile, spin orbit splitting increases by 56 meV/%Bi regardless N content. There is an excellent agreement between the model predictions and experiment reported in the literature. In addition, alloys compositions and oscillator strengths of transition energies have been calculated for GaNAsBi alloys which represent active zone of temperature insensitive (1.55 μm and 1.3 μm) wavelength laser diodes intended for optical fiber communications. A crossover at about 0.6 eV has occurred between E_g and Δ_so of GaN_.039As_.893Bi_.068. When the quaternary is lattice mismatched to GaAs, resonance energy increases with Bi content if N content decreases. On the other hand, effective mass behavior of carriers at Γ point has been discussed with respect to alloy composition, k-directions and lattice mismatch.     

Green electroluminescence from an n-ZnO: Er/p-Si heterostructured light-emitting diode

Erbium-doped ZnO (ZnO:Er) thin films with various doping concentrations were deposited on p-Si substrates by ultrasonic spray pyrolysis (USP). The n-ZnO:Er/p-Si heterojunctions were further employed to fabricate light-emitting diodes (LEDs). The devices showed diode-like rectifying current–voltage characteristics with a low reverse breakdown voltage, attributed to the avalanche breakdown. A distinct green electroluminescence peaking at 537 nm and 558 nm were observed at room temperature under reverse bias. The green electroluminescence originated from the electron impact excitation of Er³⁺ ions doped in ZnO films.     

Small-bore fluorocarbon polymer-coated silver hollow glass waveguides for Er:YAG laser light

Several types of fluorocarbon polymer (FCP)-coated silver hollow glass waveguides have been fabricated for Er:YAG laser delivery by using the improved wet chemical technique and dynamic coating procedure. The straight losses of 2 m long 700 μmØ and 540 μmØ waveguides are 0.4 and 1.0 dB, respectively. The transmission losses of these waveguides are below 1.5 dB even when the waveguides are bent to 180° with the bending radius of either 20 or 15 cm. The waveguides with the small diameters of 320 and 200 μm have also been developed for clinical treatment, which exhibit low enough transmission losses for Er:YAG laser light.     

不同波长激发下YLiF4：Er3+,Tm3+,Yb3+的发光

水热法合成了YLiF₄:Er³⁺,Tm³⁺,Yb³⁺,其中Er³⁺、Yb³⁺和Tm³⁺的摩尔分数分别为1%、1.5%和2%。当用355nm光激发时,其发光为蓝色,峰值位于450nm,对应于Tm³⁺的¹D₂→³F₄跃迁。用378nm激发时,发光为绿色,主要发光峰位于552nm。980nm光激发时,发光为白色,发光峰分别位于665(651),552(543),484,450nm处,并在648nm处还观察到了一个发光峰,其中最强的发射为红光。YLiF₄:Er³⁺,Tm³⁺,Yb³⁺的蓝光来源于Tm³⁺的激发态¹G₄到基态³H₆的跃迁,绿光来源于Er³⁺的⁴S_3/2和²H_11/2到基态⁴I_15/2的跃迁,红光既来源于Tm³⁺的¹G₄→³F₄的跃迁,也来源于Er³⁺的⁴F_9/2→⁴I_15/2的跃迁。在上转换发光中,还探测到了紫外光359nm的发射。监测665nm得到的激发光谱不同于监测552nm的激发光谱,在665nm的激发光谱中出现了对应Tm³⁺的¹G₄能级的峰。在双对数曲线中,蓝光484nm、绿光552nm和红光665nm的斜率分别为2.25、2.28和2.21,紫外光359nm的斜率为2.85。因此在980nm激发下,蓝光484nm、绿光552nm和红光665nm都是双光子过程,紫外光359nm的发射是三光子过程。     

有重弹性体形变与质量分布规律的简明推导

依据胡克定律与串联弹性体的劲度系数计算公式,直观简便地导出了弹性体在重力场中的形变规律、质量分布规律及其质心位置.     

Neutrino mass operators of dimension up to nine in two-Higgs-doublet model

We study higher-dimensional neutrino mass operators in a low energy theory that contains a second Higgs doublet, the two Higgs doublet model. The operators are relevant to underlying theories in which the lowest dimension-five mass operators would not be induced. We list the independent operators with dimension up to nine with the help of Young tableau. Also listed are the lowest dimension-seven operators that involve gauge bosons and violate the lepton number by two units. We briefly mention some of possible phenomenological implications.     

Unified study of lead: Energy-dependent pseudopotential calculation

A Unified study of lattice-mechanical properties of lead using energy-dependent pseudopotential is carried out. Energy dependence in pseudopotential is considered through the effective mass approximation; the pseudopotential model chosen is the local Heine-Abarenkov model potential. Properties studied include cohesive energy, equilibrium lattice parameter, second-order elastic constants, pressure derivative of second-order elastic constants, equation of state (atT=0 K), phonon-dispersion and effective two-body interaction. The results show fairly good agreement with experiment especially with a modified Heine-Abarenkov potential.     

Effect of annealing on the optical and electrical properties of ZnO:Er films

The effect of dopant concentration and annealing in the oxidizing atmosphere on the structural, optical, and electrical properties of ZnO:Er films deposited on sapphire substrates by the electron-beam evaporation method is investigated. The optical and electrical properties of these films were studied by UV-VIS-IR absorption and reflection spectroscopy, photoluminescence, and resistivity measurements. Experimental results reveal that as-deposited ZnO:Er films have both high transmittance in the visible range and low electrical resistivity and can be used as efficient transparent conducting oxides (TCOs). These films annealed in the oxidizing atmosphere have a visible emission band which can be used to fabricate light-emitting diodes.     

YLiF4:Er3+,Yb3+中敏化剂浓度对发光的影响

用水热法合成了YLiF4：Er^3＋,Yh^3＋,Er^3＋的浓度固定为2mol％,Yb^3＋浓度变化范围是0～7mol％。在这个浓度范围内,980nm附近的吸收随着Yb^3＋浓度的增大而增强。用980nm激发得到的上转换发光强度随Yb^3＋浓度的增大而增强。在Yb^3＋浓度低于6mol％时,上转换发光强度随Yb^3＋浓度的增大变化的比较缓慢,当Yb^3＋浓度超过6mol％时,上转换发光突然增强。以Yb^3＋浓度是2mol％的样品为代表,研究了Er^3＋对应红光、绿光发射的激发光谱,并测试了不同波长激发下的红光发射和绿光发射,证明红光发射是来源于^4F9/2→^2I15/2,绿光是来自^4S3/2→^2I15/2和^2H11/2→^2I15/2。它们的上转换过程都是双光子过程。     

Er:Yb共掺杂SiO2基氟氧化物玻璃的上转换发光

制备了Er~(3 ):Yb~(3 )共掺杂SiO_2基氟氧化物玻璃,测试了样品在488um激光激发下的激发谱和930nm红外光激发下的上转换可见光谱。在红外光激发下,检测到了Er~(3 )离子较强的~4S_(3/2)(~2H_(11/2))→~4I_(15/2)和~4F_(9/2)→~4I_(5/2)可见光发射。简单分析了上转换红光增强的机制。