The elastic constants for single-crystal bismuth and tin from room temperature to the melting point

The six adiabatic elastic stiffness constants of bismuth and tin have been determined over a range of temperatures extending from room temperature to the melting point. These constants were computed from measurements of the ultrasonic wave velocity in high-purity, single crystal specimens. The constants for bismuth at the melting point are C₁₁ = 56·l C₁₃ = 24·2 C₁₄ = 60 C₃₃ = 34·9 C₄₄ = 90 C₆₆= 16·1 in units of 10¹⁰ dynes/cm². The constants for tin at the melting point (in the same units) are C₁₁ = 61·3 C₁₂ = 38·5 C₁₃ = 38·0 C₃₃ = 75·6 C₄₄ = 16·9 C₆₆ = 19·0.     

The influence of the mean free path on the current induced superconducting/normal conducting transition of tin whiskers with indium impurities

The current induced step-like structure in the V-I characteristics of tin whiskers with indium impurities up to 4 at.% shows a zero voltage intercept I₀ of approximatively 0.5I_c. This current can be explained by the existence of phase slip centers above the critical current which carry a time averaged supercurrent of ≈0.5I_c. From the differential resistance associated with the first step a “healing length” L_n proportional to l^{$\text{1}\text{2}$} (l = mean free path) was obtained which can be related to the quasi-particle diffusion length Λ introduced by Tinkham et al. in the explanation of temperature independent nonequilibrium processes between pairs and quasiparticles at a phase slip center.     

The resistance jump in the pure type-I superconductors tin,indium and lead

It is shown that for tin, indium and lead samples of sufficiently high purity, sufficiently large diameter (2–3mm), and sufficiently close to the critical temperature (ΔT<0.15K), there exists a common value close to $\text{2}\text{3}$(0.64?R(i_c)/R_n ? 0.69) of the resistance jump at the transition from the superconducting to the intermediate state.     

The hydrostatic pressure derivatives of the elastic constants of indium and an indium cadmium alloy

The hydrostatic pressure derivatives of the elastic stiffness constants of indium and indium-3.4 at.% cadmium alloy single crystals have been obtained from pulse echo overlap measurements of the dependence of ultrasonic wave velocities upon pressure. The softest zone centre acoustic phonon mode in indium is a shear mode propagating k along the [101] direction rather than that (k[110], e[11?0]) which drives the ferroelastic phase transition in the indium-cadmium alloys. The derivative δ((C₁₁ – C₁₂)/2)/δP is positive, accounting for the stability of the fct structure of indium under high pressure. Using the quasiharmonic, anisotropic continuum model the acoustic mode Grüneisen parameters have been calculated and are discussed in terms of mode softening. The high temperature limiting value$\text{\$}\text{?}$γ_H (= 2.56) of the mean acoustic mode Grüneisen parameter is found to be close to the thermodynamic Grüneisen parameter γ^th (=2.5).     

Effect of cyclic heat treatment on the density of cadmium with a bismuth admixture

A study has been made of the effect of cyclic heat treatment on the density of cadmium having a bismuth admixture. The effects of the heating rate, cooling rate, and time the cadmium is held at the maximum temperature were studied. It is concluded that thermal-structural stresses and admixture enrichment of grain boundaries play an important role in the density changes.Deceased.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, Vol. 12, No. 6, pp. 21–27, June, 1969.     

Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes

This paper reports that highly transparent and low resistance tantalum-doped indium tin oxide (Ta-doped ITO) films contacted to p-type GaN have been prepared by the electron-beam evaporation technique. The Ta-doped ITO contacts become Ohmic with a specific contact resistance of $\sim 5.65\times 10^{ - 5}$~$\Omega \cdot$cm$^{2}$ and show the transmittance of $\sim $98% at a wavelength of 440~nm when annealed at 500~\du. Blue light emitting diodes (LEDs) fabricated with Ta-doped ITO p-type Ohmic contact layers give a forward-bias voltage of 3.21~V at an injection current of 20~mA. It further shows that the output power of LEDs with Ta-doped ITO contacts is enhanced 62% at 20~mA in comparison with that of LEDs with conventional Ni/Au contacts.     

Q β -Measurements of indium,tin and antimony isotopes with massesA=128 and 130

β-decay energies of neutron rich tin, antimony and tellurium isotopes with mass numberA=128 and 130 were measured. The results obtained are discussed within the framework of earlier measurements. Additionally nuclear masses deduced from the experimentalQ _β -values are compared with mass formulae predictions.     

Work function changes and surface chemistry of oxygen, hydrogen, and carbon on indium tin oxide

The surface chemistry of indium tin oxide (ITO) has been investigated with Auger electron spectroscopy (AES) and high resolution electron energy loss spectroscopy (HREELS). A vibrating Kelvin probe (KP) with a graphite reference was used to monitor the absolute work function (Φ) of ITO as a function of chemical modification. The ITO was exposed in situ to molecular hydrogen (H₂), hot-filament-activated oxygen (O₂^*), and hot-filament-activated deuterium (D₂^*). The initial Φ of ITO was determined to be 5.2 eV, and surface chemical changes had strong effects on this value, as seen by KP. Exposure of clean ITO to O₂^* increased Φ to 5.6 eV, but the increase was short-lived. The changes in Φ over time were correlated with the uptake of carbon impurities in ultra high vacuum (UHV), as monitored by AES.

The HREELS of ITO revealed significant hydrocarbon impurities. Chemical reduction of ITO produced a metallic surface and dehydrogenated the adsorbed hydrocarbons. Both re-oxidation of metallic ITO and oxidation of clean ITO temporarily removed adventitious carbon from the surface, but oxidized ITO adsorbed an even larger quantity of carbon over time.     

Effect of fabrication conditions on the properties of indium tin oxide powders

This paper reports that indium tin oxide （ITO） crystalline powders are prepared by coprecipitation method. Fabrication conditions mainly as sintering temperature and Sn doping content are correlated with the phase, microstructure, infrared emissivity c and powder resistivity of indium tin oxides by means of x-ray diffraction, Fourier transform infrared, and transmission electron microscope. The optimum sintering temperature of 1350℃ and Sn doping content 6～8wt% are determined. The application of ITO in the military camouflage field is proposed.     

Elastic constants of bismuth polycrystal containing tin,lead, antimony and tellurium impurities

Investigations of ultrasonic velocity and internal friction are carried out in bismuth polycrystals containing Sn, Pb, Sb and Te impurities in the concentration range of 0–1 atomic percent using the composite oscillator technique, and elastic constants are estimated from velocity and density data. The variations of elastic constants are interpreted in terms of changes of lattice parameter, valency of the impurity, the electron-atom ratio, atomic size and Fermi energy. It is observed that the elastic constants are less affected in Bi-Te alloys compared with Bi-Sb, Bi-Pb and Bi-Sn alloys in the above concentration range.     

Characterization of silicon nanowires grown on silicon, stainless steel and indium tin oxide substrates

Silicon nanowires (SiNWs) have been grown on crystalline silicon (Si), indium tin oxide (ITO) and stainless steel (SS) substrates using a gold catalyst coating with a thickness of 200 nm via pulsed plasma-enhanced chemical vapor deposition (PPECVD). Their morphological, mineralogical and surface characteristics have been investigated using scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Raman analysis. SiNWs growth is accompanied by oxidation, thus yielding partially (SiO _x ) and fully oxidized (SiO₂) Si sheaths. The mean diameters of these SiNWs range from 140 to 185 nm. Si with (111) and (220) planes exists in SiNWs grown on all three substrates while Si with a (311) plane is detected only for Si and ITO substrates. Computational simulation using density functional theory (DFT) has also been conducted to supplement the experimental Raman analyses for crystalline Si and SiO₂. XPS results reveal that ca. 30 % of the SiNWs have been oxidized for all substrates. The results presented in this paper can be used to aid selection of appropriate substrates for SiNW growth, depending on specific applications.     

Effect of indium addition on the structure and magnetic properties of YIG

In this work we report the structure and magnetic properties of a series of single-phase indium-substituted yttrium iron garnet (In-YIG) nanoparticles with nominal composition of Y₃In_xFe_5−xO₁₂ (x=0.1, 0.2, 0.3 and 0.4) prepared by conventional mixed oxide route. Based on XRD results, the lattice parameters of the samples increased with increase in In³⁺ content due to its larger ionic radius. Mössbauer results confirmed the substitution of In³⁺ for Fe³⁺ in [a] site of YIG structure. Further, the magnitudes of the magnetic hyperfine field (MHF) were seen to reduce due to indium substitution. Moreover, a rising trend was observed for saturation magnetization (M_S) of the samples with x>0.2 owing to the substitution of non-magnetic In³⁺ for Fe³⁺. However, the observed initial drop of M_S for the sample with x=0.2 compared to that with x=0.1 is possibly attributed to the dominance of spin canting over the net magnetization rise caused by In³⁺ in [a] sites.