低压长脉冲载荷下β-HMX单晶滑移系的微观物理化学响应

采用基于ReaxFF反应力场的分子动力学方法,从炸药弹塑性微观机制出发,研究了在低压长脉冲载荷下β-1,3,5,7-四硝基-1,3,5,7-四氮杂环辛烷(β-HMX)炸药单晶中最有可能的七组滑移系的微观物理化学响应.模拟结果表明沿着垂直于(001)、(101)、(100)、(011)、(111)、(110)、(010)晶面的长脉冲作用方向,这七组滑移系呈现不同的物理化学响应.体系的剪切应力、能量、温度以及化学反应与长脉冲作用方向存在明显的依赖性:对(010)晶面,体系的剪切应力位垒高,能量和温度升高得快,化学反应很快发生,反应敏感度最高;对(001)晶面,体系的剪切应力位垒低,能量和温度变化缓慢,化学反应很难发生,因此反应敏感度低.滑移系的反应敏感度与滑移面两侧的分子间接触程度(即空间位阻)以及接触原子或基团间的反应活性紧密相关.对空间位阻大且相互接触的原子或基团容易发生反应的方向,滑移系的反应敏感度就高;对空间位阻小或相互接触的原子或基团不容易发生反应的方向,滑移系的反应敏感度就低.具有较高化学反应敏感度的滑移系被认为与单晶炸药中的"热点"起源有关.本研究为进一步发展更加合理和可靠的感度评价方法提供了理论支撑.     

低压长脉冲载荷下β-HMX单晶滑移系的微观物理化学响应

采用基于ReaxFF反应力场的分子动力学方法, 从炸药弹塑性微观机制出发, 研究了在低压长脉冲载荷下β-1,3,5,7-四硝基-1,3,5,7-四氮杂环辛烷(β-HMX)炸药单晶中最有可能的七组滑移系的微观物理化学响应.模拟结果表明沿着垂直于(001)、(101)、(100)、(011)、(111)、(110)、(010)晶面的长脉冲作用方向, 这七组滑移系呈现不同的物理化学响应. 体系的剪切应力、能量、温度以及化学反应与长脉冲作用方向存在明显的依赖性: 对(010)晶面, 体系的剪切应力位垒高, 能量和温度升高得快, 化学反应很快发生, 反应敏感度最高; 对(001)晶面,体系的剪切应力位垒低, 能量和温度变化缓慢, 化学反应很难发生, 因此反应敏感度低. 滑移系的反应敏感度与滑移面两侧的分子间接触程度(即空间位阻)以及接触原子或基团间的反应活性紧密相关. 对空间位阻大且相互接触的原子或基团容易发生反应的方向, 滑移系的反应敏感度就高; 对空间位阻小或相互接触的原子或基团不容易发生反应的方向, 滑移系的反应敏感度就低. 具有较高化学反应敏感度的滑移系被认为与单晶炸药中的“热点”起源有关. 本研究为进一步发展更加合理和可靠的感度评价方法提供了理论支撑.     

铁表面的振动弛豫

本文用低能电子衍射动力学理论的能带近似法,分别对Fe{001}表面的(00),(01),(11),(10),(10)和(20)束;Fe{110}表面的(10),(11),(11)和(20)束和Fe{111}表面的(00),(10),(10)和(11)束,通过理论计算与观测值的比较。发现Fe{001}和Fe{111}表面都存在振动弛豫。而Fe{110}表面无此现象。     

TATB晶体结构的周期性密度泛函理论研究

对TATB晶体进行DFT-B3LYP/6-31G~(* *)周期性计算研究，求得其能带能带结 构和电子结构。探讨了结构-性能关系，从带隙约为4.1eV扒知TATB晶体的导电性处 于半导体和绝缘体之间，计算所得升华热为136.25kJ·mol~(-1)， 与实验值良好 相符，从原子间距和Mülliken集居分析，发现TATB晶体中同一层分子之间存在氢 键，而不同层之间距离较大，作用较弱，TATB分子中硝基氧带较多负电荷而氨基氢 带较多正电荷，这使TATB很难成为电子受体和给体，故化学上很稳定，考察晶体中 点电荷静电势，发现其在(001)面上的投影呈均匀分布，而在(100)和(010)面上的 揣影则有明显界面，表明同层分子间电子呈高度离域，异层之间相互作用极小，这 可解释TATB晶体沿c轴鼓胀以及受热循环后长大的各向异性和不可复原性等实验事 实。     

Fe2C晶体及低指数晶面的结构与稳定性研究

采用自旋极化的密度泛函理论(DFT)对正交与六方的Fe₂C晶体体相与表面性质进行了研究,计算了晶胞的聚合能、磁矩以及低指数晶面的表面能。研究结果表明,两种晶型Fe₂C 的磁性质相似,但正交堆积的Fe₂C比六方堆积的Fe₂C更稳定。正交晶系Fe₂C低指数晶面的稳定性以 (011) > (110) > (100) > (101) > (001) 顺序降低。对一系列碳化程度不同的碳化铁最稳定表面(Fe₂C(011)、Fe₃C(001)和Fe₄C(100))表面能的比较显示,碳化铁表面的相对稳定性与碳化度非线性相关。另外,与面心立方(BCC)铁最稳定表面(110)相比,Fe₂C、Fe₃C及Fe₄C晶体最稳定表面具有较低的表面能,表明铁表面碳化在热力学上是有利的。     

TATB基PBX结合能的分子动力学模拟

用分子动力学（MD）方法, 模拟计算了四种氟聚合物(聚偏二氟乙烯（PVDF）、聚三氟氯乙烯（PCTFE）、氟橡胶（F₂₃₁₁)、氟树脂(F₂₃₁₄))与TATB(1,3,5- 三氨基- 2,4,6- 三硝基苯)晶体的相互作用. 结果发现, 四种氟聚物与TATB的结合能大小排序为PVDF>F₂₃₁₁>F₂₃₁₄>PCTFE, 各氟聚物在TATB不同晶面上的结合能大小排序为(001)>(010)>(100), 结合能主要由分子间氢键决定.     

Fe_3O_4(111),(110)和(001)表面结构的密度泛函理论研究(英文)

使用密度泛函理论对Fe3O4(111),(110)和(001)的表面结构及稳定性进行了研究。Fe3O4(111)表面有六种不同的终结形式,其中以四面体或八面体铁层终结的结构最稳定。对于(110)和(001)表面而言,分别有两种终结,且能量相近。计算结果与实验结果非常吻合并且合理解释了实验结果的争议性和复杂性。表面自由能的计算表明,(111)表面在热力学上不如(110)和(001)表面稳定,它的形成应该是动力学控制过程。     

N-脒基脲二硝酰胺盐晶体形貌的分子动力学研究

采用分子动力学方法,在正侧(NVT)系综下研究了N-脒基脲二硝酰胺盐(FOX-12)在溶剂中的晶体形貌.通过构建溶剂分子层-晶面的界面吸附模型模拟其动力学平衡构型,计算溶剂与晶体表面间的结合能,进而对真空附着能进行修正并获得溶剂条件下的晶貌.使用自然冷却法在水和水/甲醇中培养FOX-12晶体并利用扫描电子显微镜进行了表征.结果表明,在真空条件下决定FOX-12晶貌的6个重要晶面为(110),(200),(201),(011),(002)和(111);FOX-12在水溶液条件下的主要晶面为(110)和(011),在水/甲醇溶液条件下的主要晶面为(200)和(011),预测的晶体形貌与实验结果相吻合.对水分子和FOX-12的(110)面间的径向分布函数进行了计算,分析了水分子和晶面间的分子间作用力.     

Fe3O4 (111)|(110)和(001)表面结构的密度泛函理论研究

使用密度泛函理论对Fe₃O₄ (111),(110)和(001)的表面结构及稳定性进行了研究。Fe₃O₄ (111)表面有六种不同的终结形式,其中以四面体或八面体铁层终结的结构最稳定。对于(110)和(001)表面而言,分别有两种终结,且能量相近。计算结果与实验结果非常吻合并且合理解释了实验结果的争议性和复杂性。表面自由能的计算表明,(111)表面在热力学上不如(110)和(001)表面稳定,它的形成应该是动力学控制过程。     

TATB/氟聚物PBX沿不同晶面力学性能的分子动力学模拟

用分子动力学(MD)方法, 模拟计算了著名钝感炸药TATB(1, 3, 5-三氨基-2, 4, 6-三硝基苯)与四种氟聚合物[聚偏二氟乙烯(PVDF)、聚三氟氯乙烯(PCTFE)、氟橡胶(F₂₃₁₁)、氟树脂(F₂₃₁₄)]构成的高聚物粘结炸药(PBX)的力学性能. 结果表明, 在TATB中添加少量氟聚物能有效改善其力学性能; 沿TATB不同晶面与氟聚物“粘结”, 构成PBX的力学性能有所不同, 改善力学性能的整体效应为(010)≈(100)>(001).     

Molecular dynamics simulations of shock waves in oriented nitromethane single crystals: plane-specific effects

Molecular dynamics simulations of supported shock waves (shock pressure P(s) ～ 15 GPa) propagating along the [110], [011], [101], and [111] directions in crystalline nitromethane initially at T = 200 K were performed using the nonreactive Sorescu-Rice-Thompson force field [D. C. Sorescu, B. M. Rice, and D. L. Thompson, J. Phys. Chem. B 104, 8406 (2000)]. These simulations, combined with those from a preceding study of shocks propagating along [100], [010], and [001] directions in nitromethane for similar conditions of temperature and shock pressure [L. He, T. D. Sewell, and D. L. Thompson, J. Chem. Phys. 134, 124506 (2011)], have been used to study the post-shock relaxation phenomena. Shocks along [010] and [101] lead to a crystal-crystal structure transformation. Shocks propagating along [011], [110], [111], [100], and [001] exhibit plane-specific disordering, which was characterized by calculating as functions of time the 1D mean square displacement (MSD), 2D radial distribution function (RDF), and 2D orientation order parameter P(2)(θ) in orthogonal planes mutually perpendicular to the shock plane; and by calculating as functions of distance behind the shock front the Cartesian components of intermolecular, intramolecular, and total kinetic energies. The 2D RDF results show that the structural disordering for shocks along [100], [110], and [111] is strongly plane-specific; whereas for shocks along [001] and [011], the loss of crystal structural order is almost equivalent in the orthogonal planes perpendicular to the shock plane. Based on the entire set of simulations, there is a trend for the most extensive disordering to occur in the (010) and (110) planes, less extensive disordering to occur in the (100) plane, and essentially no disordering to occur in the (001) plane. The 2D P(2)(θ) and 1D MSD profiles show, respectively, that the orientational and translational disordering is plane-specific, which results in the plane-specific structural disordering observed in the 2D RDF. By contrast, the kinetic energy partitioning and redistribution do not exhibit plane specificity, as shown by the similarity of spatial profiles of the Cartesian components of the intermolecular, intramolecular, and total kinetic energies in orthogonal planes perpendicular to the shock plane.     

Three-dimensional crystallographic determination of the body-centered-cubic morphologies of shear-aligned block copolymer systems

The texture of ordered phases of block copolymer melts and gels is highly sensitive to shear. In the body-centered-cubic phase of a block copolymer system [polystyrene–poly(ethylene butylene)–polystyrene] mixed with oil, we show how a given textures can be controlled with the application of a specific shear rate and amplitude. The low-amplitude shear texture is dominated by {001} planes perpendicular to the shear gradient and by the [110] axis parallel to the flow direction, that is, the {001}/[110] slip system. Detailed crystallographic studies show that both intermediate-amplitude oscillatory shear and large-amplitude oscillatory shear lead to twin structures with {112} planes sharing neighboring twins and [111] axes parallel to the shear flow. At an intermediate shear amplitude, the ve shear plane, defined by the shear flow direction (v) and shear vorticity direction (e), is parallel to the {112} twin planes. At a high shear amplitude, the orientation is rotated 90°, and this makes the ve shear plane parallel to the {110} crystallographic planes. The crystalline slip system is accordingly ({112 }/[111] + {11 2}/[111]) under intermediate-amplitude shear and ({11 0}/[111] + {1 10}/[111]) under large-amplitude shear. © 2004 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 42: 3095–3101, 2004     

New Orientation Formation During Recrystallization of Cold Deformed, High Symmetry Aluminium Bicrystals

The crystallography of recrystallization nucleation has been investigated in channel-die deformed pure Al bicrystals with {100}〈011〉/{110}〈001〉, {100}〈001〉/{110}〈011〉 and {100}〈001〉/{110}〈001〉 orientations. The new grain orientations and misorientations were followed by systematic local orientation measurements using SEM and semi-automatic measurements in TEM. The bicrystals were cold deformed by channel-die compression up to true strains of 1.5. During recrystallization annealing, the deformation bands of unstable orientations are the privileged sites for the formation of new grains. These nuclei were misoriented with respect to the orientations identified within the neighbouring deformed areas by α(〈111〉, 〈112〉 or 〈100〉) relations. Grain boundary migration and ‘consumption’ of the as-deformed areas was always favoured along directions parallel to the traces of the {111} slip planes that had been most active during deformation as shown in the stable and structurally homogeneous Goss {110}〈001〉 oriented grains. At logarithmic strains below 1–1.5 the grain boundary does not seem to be a specific nucleation site of new grains.     

Deformation mechanisms in biaxially drawn polyethylene

The crystal orientation of solid-state biaxially drawn solution-crystallized ultra-high-molecular weight polyethylene (UHMW-PE) film has been revealed from flat-plate wide-angle x-ray scattering (WAXS) patterns and interpreted in terms of crystal plasticity. A slightly drawn film (λ ≤ 3 × 3) possesses only a (100) planar orientation, whereas in a highly drawn film (λ ≥ 6 × 6), a mixed (100) and {110} planar orientation is present. Crystal deformation is found to proceed both by slip on (100) and {110} planes, resulting in a (100) texture in a similar way to crystal deformation in uniaxially drawn polyethylene and by {110} 〈110 〉 transverse slip and/or {310} twinning which results in a {110} texture. It is postulated that during transverse slip or twinning, the molecules deform without chain extension. As a consequence, neither the molecular draw ratio nor the tensile properties change significantly for macroscopic draw ratios above 10 in contrast to the data obtained for uniaxially drawn polyethylene.     

Morphological evolution of Cu2O nanocrystals in an acid solution: stability of different crystal planes

The morphological evolution of uniform Cu(2)O nanocrystals with different morphologies in a weak acetic acid solution (pH = 3.5) has been studied for cubic, octahedral, rhombic dodecahedral, {100} truncated octahedral, and {110} truncated octahedral nanocrystals. Cu(2)O nanocrystals undergo oxidative dissolution in weak acid solution, but their morphological changes depend on the exposed crystal planes. We found that the stability of Cu(2)O crystal planes in weak acid solution follows the order of {100} ? {111} > {110} and determines how the morphology of Cu(2)O nanocrystals evolves. The stable {100} crystal planes remain, and new {100} facets form at the expense of the less stable {111} and {110} crystal planes on the surface of Cu(2)O nanocrystals. Density functional theory calculations reveal that the Cu-O bond on Cu(2)O(100) surface has the shortest bond length. These results clearly exemplify that the morphology of inorganic crystals will evolve with the change of local chemical environment, shedding light on fundamentally understanding the morphological evolution of natural minerals and providing novel insights into the geomimetic synthesis of inorganic materials in the laboratory.     

Selective synthesis of Co3O4 nanocrystal with different shape and crystal plane effect on catalytic property for methane combustion

We have succeeded in synthesizing Co(3)O(4) nanosheets, nanobelts, and nanocubes with a hydrothermal process of cobalt hydroxide precursor and subsequent direct thermal decomposition. The predominantly exposed planes are {112}, {011}, and {001}, respectively. The methane combustion catalytic activity order of crystal planes follows {112} > {011} > {001}. The selective synthesis of transition metal oxides with uniform and different reactive crystal planes under nanoscale conditions is expected to bring up new opportunities for design, tuning, and control of chemical activity, specificity, and selectivity.     

Density Functional Theory Calculations Revealing Metal‐like Band Structures and Work Function Variation for Ultrathin Gallium Arsenide (111) Surface Layers

Density functional theory (DFT) calculations have been performed on tunable numbers of gallium arsenide (100), (110), and (111) planes for their electron density of states (DOS) plots and the corresponding band diagrams. The GaAs (100) and (110) planes show the same semiconducting band structure with tunable plane layers and a band gap of 1.35 eV around the Fermi level. In contrast, metal‐like band structures are obtained with a continuous band structure around the Fermi level for 1, 2, 4, 5, 7, and 8 layers of GaAs (111) planes. For 3, 6, and 9 GaAs (111) planes, the same semiconducting band structure as seen in the (100) and (110) planes returns. The results suggest the GaAs {111} face should be more electrically conductive than its {100} and {110} faces, due to the merged conduction band and valence band. GaAs (100) and (110) planes give a fixed work function, but the (111) planes have variable work function values that are smaller than that obtained for the (100) and (110) planes. Furthermore, bond length, bond geometry, and frontier orbital electron number and energy distribution show notable differences between the metal‐like and semiconducting plane cases, so the emergence of plane‐dependent electronic properties have quantum mechanical origin at the orbital level. GaAs should possess similar facet‐dependent electronic properties to those of Si and Ge.