氧化槽隔离型RC-IGBT的设计与仿真

提出了一种新型的RC-IGBT器件,相比于常规RC-IGBT,新型的RC-IGBT在集电极侧引入了一个类似于栅极的多晶硅沟槽结构,不同之处是沟槽底部结构没有氧化层将多晶硅与硅体区相隔离,于是可将此重掺杂的多晶硅区作为新型的RC-IGBT的集电极的N+短路区,故称为TO-RC-IGBT(Trench oxide reverse conducting IGBT)。由于集电极P+阳极层与N+短路区之间的氧化层隔离,TO-RC-IGBT并未出现常规RC-IGBT导通时的回跳现象。为了避免产生回跳现象,常规RC-IGBT的元胞宽度通常达数百微米,而TO-RC-IGBT元胞宽度只有20μm,因而TO-RC-IGBT不会出现常规RC-IGBT的反向电流分布不均匀的问题。     

基于导通延迟补偿的并联MOS栅控晶闸管均流方法研究

阴极短路MOS栅控晶闸管(Cathodic Short MOS-Controlled Thyristor,CS-MCT)在电容型脉冲功率系统中应用广泛,但面临电流极限的问题,尤其是在大电容高电压条件下,这就需要解决MCT器件并联均流的问题.进行理论和仿真分析栅驱动电阻对并联均流的影响,并采用导通延迟补偿法对器件均流进行...     

新型电力电子器件IGCT及其应用

IGCT是一种在大功率开关器件GTO基础上改进而成的新型大功率电力电子器件。和GTO相比，IGCT的关断时间降低了30％，功耗降低40％。IGCT不需要吸收电路，可以像晶闸管一样导通，像IGBT一样关断，并且具有最低的功率损耗。IGCT在使用时只需将它连接到一个20V的电源和一根光纤上就可以控制它的开通和关断。由于IGCT设计理想，使得IGCT的开通损耗可以忽略不计，再加上它的低导通损耗，使得它可以在以往大功率半导体器件所无法满足的高频率下运行。     

一种具有独特导通机理的新型超结IGBT

首次指出了超结IGBT这一新型功率半导体器件独特的导通机理并对其作了详细分析.通过TMAMEDICI仿真验证,超结IGBT耐压能力和正向导通能力都明显优于普通IGBT.并且发现,不同N柱、P柱掺杂浓度下器件的导通模式会在单极输运和双极输运之间相互改变,而这一特性是超结IGBT所独有的.也正是这一特殊的导通机理使得超结I...     

逆导IGBT实现Snapback-Free所需最小P-emitter长度的理论计算

A physically based equation for predicting required p-emitter length of a snapback-free reverse- conducting insulated gate bipolar transistor （RC-IGBT） with field-stop structure is proposed. The n-buffer resis- tances above the p-emitter region with anode geometries of linear strip, circular and annular type are calculated, and based on this, the minimum p-emitter lengths of those three geometries are given and verified by simulation. It is found that good agreement was achieved between the numerical calculation and simulation results. Moreover, the calculation results show that the annular case needs the shortest p-emitter length for RC-IGBT to be snapback-free.     

新HB系列：IGBT

意法半导体的新HB系列绝缘栅双极晶体管（IGBT）拥有较低的关机能耗，同时可降低达30％的导通损耗。     

抑制或消除RC-IGBT回跳现象的技术发展概述

逆导型绝缘栅双极型晶体管(RC-IGBT)以其良好的软关断特性、短路特性以及良好的功率循环特性等优点,成为现在半导体功率器件技术领域研究的热点.RC-IGBT在拥有众多优点的同时,最典型的问题就是电压回跳现象,如何抑制或消除器件开启初期固有的回跳现象是RC-IGBT器件领域的技术关键.通过对RC-IGBT领域的国内外专...     

一种低反向恢复电流的无电压回跳RC-IGBT设计

提出了一种无电压回跳的逆导型绝缘栅双极型晶体管(RC-IGBT)结构,在集电极侧场截止层下方加入了一个N型层作为高阻层且把N+集电区部分替换为P型薄层,通过加入的N型高阻层增加集电极电阻,同时用P型薄层保证在初始导通时集电区的空穴能够在第一时间注入,消除了电压回跳现象,并且使器件的反向恢复电流峰值降低了15 A/cm³,同时改善了器件的关断特性,关断时间减小了103 ns。相较于传统FS RC-IGBT,反向恢复峰值电流降低了33.3%,关断时间减小了9.93%。     

IR推出可节省60％马达控制功耗的Trench IGBT器件

International Rectifier日前发布生产600V绝缘栅双极晶体管（IGBT），该器件可降低反相器功耗，最高降幅达60％，在马达控制中的功耗最高为2．5kW。     

3300V沟槽栅IGBT的衬底材料的优化设计

使用TCAD仿真软件对3 300 V沟槽栅IGBT的静态特性进行了仿真设计.重点研究了衬底材料参数、沟槽结构对器件击穿电压、电场峰值等参数的影响.仿真结果表明,随衬底电阻率增加,击穿电压增加,饱和电压和拐角位置电场峰值无明显变化;随衬底厚度增加,击穿电压增加,饱和电压增加,拐角位置电场峰值降低;随沟槽宽度增加,饱和电压降低,击穿电压和拐角位置电场峰值无明显变化;随沟槽深度增加,饱和电压降低,击穿电压无明显变化,拐角位置电场峰值增加;随沟槽拐角位置半径增加,击穿电压和饱和电压无明显变化,但拐角位置电场峰值减小.选择合适的衬底材料对仿真结果进行实验验证,实验结果与仿真结果相符,制备的IGBT芯片击穿电压为4 128 V,饱和电压约为2.18 V.     

一种新N型射极势垒绝缘栅双极晶体管

本文提出了一种新N型射极势垒绝缘栅双极晶体管。该器件用N型轻掺杂区代替传统的P+区形成空穴势垒,以阻止寄生PNP晶体管空穴分流,从而增强电导调制效应。仿真验证结果显示,该器件对比传统沟槽IGBT,其电流密度和关断损耗分别增加和降低了49%和25%,同时具有相似的击穿电压、关断时间和雪崩能量。此外,该器件具有无限大的跨导,有利于开通和关断。因此,该器件可应用于高压大功率电力电子系统。     

A high-conductivity insulated gate bipolar transistor with Schottky hole barrier contact

This letter proposes a high-conductivity insulated gate bipolar transistor (HC-IGBT) with Schottky contact formed on the p-base, which forms a hole barrier at the p-base side to enhance the conductivity modulation effect. TCAD simulation shows that the HC-IGBT provides a current density increase by 53% and turn-off losses decrease by 27% when compared to a conventional field-stop IGBT (FS-IGBT). Hence, the proposed IGBT exhibits superior electrical performance for high-efficiency power electronic systems.     

一种有强健的续流开关的新型槽栅逆导IGBT

The phenomenon that the wide P-emitter region in the conventional reverse conducting insulated gate bipolar transistor （RC-IGBT） results in the non-uniform current distribution in the integrated freewheeling diode （FWD）, and then causes a parasitic thyristor to latch-up during its reverse-recovery process, which induces a hot spot in the local region of the device is revealed for the first time. Furthermore, a novel RC-IGBT based on double trench IGBT is proposed. It not only solves the snapback problem but also has uniform current distribution and high ruggedness during the reverse-recovery process.     

SiGe-collector trench gate insulated gate bipolar transistor fabricated using multiple target sputtering

A new type of trench gate IGBT (insulated gate bipolar transistor) which uses a SiGe layer for the collector is experimentally investigated. SiGe collectors with different Ge content are deposited by multiple cathode sputtering making low temperature processing possible. The change in turn-off characteristics with Ge content is also investigated. Results indicate that the use of a SiGe collector reduces the tail current at turn-off due to the reduced injection of holes to the n⁻ drift region.     

一种积累型沟道的半超结结构绝缘栅双极型晶体管

A high performance trench insulated gate bipolar transistor which combines a semi-superjunction struc- ture and an accumulation channel （sSJTAC-IGBT） is proposed for the first time. Compared with the TAC-IGBT, the new device not only retains the advantages of the accumulation channel, but also obtains a larger breakdown voltage （BV）, a faster turn-off speed and a smaller saturation current level while keeping the on-state voltage drop lower as the TAC-IGBT does as well. Therefore, the new structure enlarges the short circuit safe operating area （SCSOA） and reduces the energy loss during the turn-off process.