掺Er/Er+O的GaN薄膜光学性质的研究

利用Raman散射谱研究了GaN注Er以及Er+O共注样品的振动模，并讨论了共注入O对Er离子发光的影响. 在Raman散射谱中，对于注Er的GaN样品出现了300 cm^-1和670 cm^-1两个新的Raman峰，而对于Er+O共注样品，除了上述两个峰外，在360 cm^-1处出现了另外一个新的峰，其中300 cm^-1峰可以用disorder-activated Raman scattering (DARS)来解释，670 cm^-1峰是由于与N空位相关的缺陷引起的，而360 cm^-1峰是由O注入引起的缺陷络合物产生的. 由于360 cm^-1模的缺陷出现，从而导致Er+O共注入GaN薄膜红外光致发光(PL)强度的下降. 关键词： GaN Er Raman散射 光致发光     

Intrinsic and Zn-, Ce-, Tb-, Er-, Sm-, and Eu-Activated photoluminescence of pseudoamorphous GaN and InGaN thin films

Thin films of pseudoamorphous GaN (a-nc-GaN), as well as of its alloys with indium, In_xGa_1−x N (x=0.04, 0.16), were prepared by magnetron sputtering of a metallic target in the plasma of a reactive nitrogen and argon mixture. The a-nc-GaN films were codoped by the Zn acceptor impurity and a set of rare-earth metal (REM) dopants, namely, Ce, Tb, Er, Sm, and Eu. Photoluminescence (PL) spectra excited by a nitrogen laser with wavelength λ=337 nm at room temperature and 77 K were measured for all compositions and a set of impurities. It was shown that the high-energy PL edge of the pseudoamorphous (a-nc) GaN matrix lies at the same energy as that of the crystalline (epitaxial) c-GaN. As in c-GaN, the Zn acceptor impurity stimulates blue luminescence; however, the PL spectrum is substantially more diffuse, with practically no temperature quenching of the PL present. Indium doping in an amount of 16 at. % results in strong PL with a diffuse peak at 2.1–2.2 eV; the PL of the alloy exhibits temperature quenching as high as a factor of three to four in the interval 77–300 K. The decay time of the PL response increases up to 50 μs. RE impurities enter the amorphous GaN host as trivalent ions and produce narrow-band (except Ce) high-intensity spectra, thus indicating both a high solubility of RE impurities in a-nc-GaN and the generation of an effective crystal field (by the GaN anion sublattice) whose local symmetry makes the intracenter f-f transitions partly allowed. __________ Translated from Fizika Tverdogo Tela, Vol. 45, No. 3, 2003, pp. 395–402. Original Russian Text Copyright ? 2003 by Andreev.     

掺稀土Ce的金刚石薄膜光致发光研究

制备了不同注入剂量的Ce^3 掺杂金刚石薄膜，研究了其光致发光特性，得到了发光主峰位于蓝紫区（421nm和462nm处）的光发射。实验中发现随着Ce^3 注入剂量的增加，器件光致发光的强度也逐渐增加，这些实验现象作了解释。     

Peculiarities of Er3+ photoluminescence in halogen-doped amorphous silica

The spectra and photoluminescence kinetics of Er³⁺ ions embedded in amorphous fluorine- and chlorine-doped silica matrices synthesized by surface-plasma chemical vapor deposition were investigated at 27–300 K. Luminescence was excited with an Ar⁺ laser at a wavelength of 514.5 nm and with a diode laser at a wavelength of 975 nm. Narrow and well-expressed components of Stark sublevels with a small contribution of inhomogeneous broadening intrinsic to Er³⁺ ions in crystalline rather than amorphous matrices were revealed and identified in photoluminescence spectra. The structure of Stark sublevels was well-resolved at low temperatures. The presence of the well-resolved Stark structure in spectra was indicative of stable anion complex formation in Er³⁺ environment presumably associated with halogen incorporation. This environment was formed at a stage of the low-temperature plasma-chemical synthesis and was destroyed at glass fusion.     

Mutual quenching of Er photoluminescence under two laser excitation in GaN:Er

Erbium photoluminescence in GaN:Er was studied with above-band-gap excitation, provided by a He–Cd laser and below-band-gap excitation by a tunable Ti–Sa laser. The spectra obtained with these two lasers exhibit different spectral shapes. When both lasers are used at the same time, we observe that the Er³⁺ photoluminescence induced by each of the lasers is partly quenched by the illumination of the other laser. In this experiment, one of the lasers is modulated and a lock-in amplifier is used to filter the corresponding photoluminescence signal. The spectra recorded this way are found to be linear combinations of spectra obtained with each of the lasers used separately. This effect is explained by the presence of defects mediating the excitation towards the Er³⁺ ions. These defects act as electron traps, which can be populated by one specific laser excitation and are photo-ionized by the other laser leading to a large quenching of Er³⁺ emission.     

Effects of alkali metal ions on upconversion photoluminescence intensity of Er3+-doped Y2O3 nanocrystals

We investigate upconversion emissions in alkali metal ions (Li⁺, Na⁺, and K⁺) and Er³⁺-codoped Y₂O₃ nanocrystals. By introducing Li⁺, upconversion intensity is significantly enhanced, while Na⁺ and K⁺ hardly have this influence. FT-IR data give evidence that the main mechanisms of the enhanced upconversion emission cannot be attributed to the decreased surface defects. EXAFS data and variations of enhanced upconversion intensities in different samples indicate that Li⁺ can occupy the interstitial sites in lattice and thus arouse large site asymmetry. In addition, locations in the samples and effects on the upconversion emission of Na⁺ and K⁺ are discussed.     

掺铒nc-Si/SiO2薄膜中nc-Si和Er3+与非辐射复合缺陷间相互作用对薄膜发光特性的影响

对nc-Si/SiO2薄膜中纳米硅(nc-Si)、Er3+和非辐射复合缺陷三者间的关系作了研究.在514.5 nm光激发下，nc-Si/SiO2薄膜在750nm和1.54μm处存在较强的发光，前者与薄膜中的nc-Si有关，后者对应于Er3+从第一激发态4I13/2到基态4I15/2的辐射跃迁.随薄膜中Er3+含量的提高，1.54μm处的发光强度明显增强，750 nm处的发光强度却降低.H处理可以明显增强薄膜的发光强度，但是对不同退火温度样品，处理效果却有所不同.根据以上实验结果，可得如下结 关键词： Er3+ nc-Si H处理     

Covalent bonding and J–J mixing effects on the EPR parameters of Er~(3+) ions in GaN crystal

The EPR parameters of trivalent Er~(3+) ions doped in hexagonal Ga N crystal have been studied by diagonalizing the 364×364 complete energy matrices. The results indicate that the resonance ground states may be derived from the Kramers doublet Γ_6. The EPR g-factors may be ascribed to the stronger covalent bonding and nephelauxetic effects compared with other rare-earth doped complexes, as a result of the mismatch of ionic radii of the impurity Er~(3+)ion and the replaced Ga~(3+) ion apart from the intrinsic covalency of host Ga N. Furthermore, the J–J mixing effects on the EPR parameters from the high-lying manifolds have been evaluated. It is found that the dominant J–J mixing contribution is from the manifold ~2K_(15/2), which accounts for about 2.5%. The next important J–J contribution arises from the crystal–field mixture between the ground state ~4I_(15/2) and the first excited state~4I_(13/2), and is usually less than 0.2%. The contributions from the rest states may be ignored.     

Optical transitions of Pr3+ and Er3+ ions in LiYF4

The optical absorption, emission, and excitation spectra of Pr³⁺ and Er³⁺ ions in LiYF₄ have been measured and energy level schemes established which agree with previous work. The temperature dependence of the emission lifetimes were investigated and analyzed using the Huang-Rhys and Struck-Fonger treatments of multiphonon decay. The non-radiative processes in LiYF₄: Er³⁺ were shown to follow the same “gap law” behavior as Er³⁺ in LaF₃ and MnF₂. Theoretical fits to the Huang-Rhys model allowed the construction of a configuration coordinate diagram for the Er³⁺ system. The non-exponential temperature dependence of the ¹D₂ lifetime in Pr³⁺ can be understood as a non-radiative transition from higher levels.     

Investigation on upconversion photoluminescence of Bi3TiNbO9:Er:Yb thin films

Bi₃TiNbO₉:Er³⁺:Yb³⁺ (BTNEY) thin films were fabricated on fused silica by pulsed laser deposition. It was demonstrated that different laser fluence and substrate temperature during growth of BTNEY upconversion photoluminescence (UC-PL) samples control the film’s grain size and hence influences the UC-PL properties. The average grain size of BTNEY thin films deposited on fused silica substrates with laser fluence 4, 5, 6, and 7 J/cm² are 30.8, 35.9, 40.6, and 43.4 nm, respectively. The 525 nm emission intensities increase with the deposition laser fluence and the emission intensities of BTNEY thin film deposited under 700 and 600 °C are almost 24 and 4 times, respectively, as strong as those of samples under 500 °C. The grain size of BTNEY thin film increases with the increasing temperature. UC-PL of BTNEY films is enhanced by increasing grain size of the films.     

Characterization of chemical bath deposited CdS thin films doped with methylene blue and Er3+

The optical, electrical, and structural properties of CdS thin films grown by chemical bath deposition and simultaneously doped with methylene blue (MB) and Er³⁺ were studied. Doping was achieved by adding a constant volume of an MB aqueous solution to the chemical bath while the relative volume (V_R) of the Er aqueous solution varied within the range 0–10% of the total growing solution. X-ray diffractograms displayed the zincblende crystalline structure for all the CdS samples, with a remarked preferred orientation along the (111) direction. The interplanar distance among the (111) planes decreased for low doping leves of Er³⁺, while for high doping concentrations such distance increased to saturation. Measurements on the carriers density indicated that the CdS thin films doped with Er³⁺ at 6% V_R presented the maximum value. In addition, the band gap energy (Eg) resulted higher for CdS:MB films with low Er³⁺ doping levels than for undoped films; however, Eg decreased until stabilization for increasing Er³⁺ concentrations.     

Photoluminescence of LiNbO3 crystals doped with Er3+ and Yb3+ ions

Results of cooperative phenomena investigations in the impurity subsystem of lithium niobate crystals doped with Er³⁺ and co-doped with Yb³⁺ impurity ions under continuous wave and pulsed excitation at 975 nm and 1064 nm wavelengths are presented. Dependences of some spectroscopic characteristics on the intensity of laser pumping are studied. Based on the pair centers model the analysis of the cooperative luminescence behavior in LiNbO₃:Yb³⁺+Er³⁺ crystals is performed.     

Experimental investigation of photoluminescence spectra of Yb3+ sensitized Er3+-doped glass samples in series

Fabrication technology of the Yb3+:Er3+ co-doped glass samples is introduced. Photoluminescence (PL)characteristics of a single sample were experimentally investigated. The PL peak intensities of two samples in series were measured and discussed. The results show that the PL peak intensities of two samples in series depend on pump manners and arrangement of the samples. The better amplification ability can be obtained by two samples in series doped with low-concentration ytterbium instead of a single sample doped with high-concentration ytterbium.     

Hybrid density functional study of optically active Er3+ centers in GaN

Understanding the luminescence of GaN doped with erbium (Er) requires a detailed knowledge of the interaction between the rare‐earth dopant and the nitride host, including intrinsic defects and other impurities that may be present in the host material. We address this problem through a first‐principles hybrid density functional study of the structure, energetics, and transition levels of the Er impurity and its complexes with N and Ga vacancies, substitutional C and O impurities, and H interstitials in wurtzite GaN. We find that, in the interior of the material, Er_Ga is the dominant Er³⁺ center with a formation energy of 1.55 eV, Er_Ga–V_N possesses a deep donor level at 0.61 eV which can assist in the transfer of energy to the 4f ‐electron core. Multiple optically active Er³⁺ centers are possible in Er‐doped GaN. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Infrared to visible upconversion of Er3+ ions in Yb3+ doped fluorohafnate glasses

The upconversion of infrared radiation into green and red luminescence has been studied for Er³⁺ and Yb³⁺ ions in fluorohafnate glasses. At room temperature normalized upconversion efficiency of 8.4x10^-4 cm²/W has been obtained for the green emission (545 nm) of Er³⁺ in doped samples containing 4.5 mol% (Yb³⁺) and 0.75 mol% (Er³⁺) pumped by 974 nm light with an absorbed intensity of 2.5 mW/cm². Both green and red upconversion radiations slightly decrease with increasing temperature. Room-temperature measured efficiency is compared with the calculated one obtained from the rate equation model of Wright.     

Room temperature photoluminescence property of Mo-doped In2O3 thin films

Mo-doped In₂O₃ thin films have been prepared on glass substrates using an activated reactive evaporation method and systematically studied the effect of oxygen partial pressure on the structural, optical, electrical and photoluminescence properties of the films. The obtained films are highly transparent and conductive. The films exhibited the lowest electrical resistivity of 5.2 × 10⁻⁴ Ω cm, with an average optical transmittance of 90% in the visible region. An intensive photoluminescence emission peaks were observed at 415 and 440 nm.