Second-harmonic generation in Zn-diffused periodically poled LiNbO3 channel waveguides

In this work second-harmonic generation by quasi-phase matching (QPM) in Zn-diffused periodically poled lithium niobate channel waveguides is presented. A stable TM?TE conversion by QPM has been found. The results are in good accordance with theoretical estimations obtained by the phase-matching condition, either for the polarisation character of the second-harmonic wave as well as for the spectral range, taking into account the periodicity of the domains. Received: 16 May 2001 / Revised version: 7 September 2001 / Published online: 30 October 2001     

Ti:LiNbO3 optical waveguides

Various experiments on Ti diffused optical waveguides in LiNbO₃ have been carried out in order to determine precisely the character of the diffusion process. The required guide parameters and the effective mode indices could be controlled by adjusting only the diffusion time under fixed temperature and film thickness. Therefore the dependence of the guide characteristics on the diffusion time has been investigated in detail. On the basis of the data obtained, a two-stage diffusion model is proposed. In the first stage, the Ti diffusant profile is described by a erfc-function, and the second stage is characterized by a modified Gaussian form.     

Diffusion of Ta in α-Ti

The diffusion of Ta in the hcp (α) phase of high-purity Ti (99.99%) was studied at different temperatures from 911 K up to 1123 K. The Rutherford Backscattering Spectrometry (RBS) and Heavy Ion RBS (HIRBS) techniques were used to obtain the penetration profiles. The evolution of the diffusion coefficient, D, as a function of temperature follows prediction of the Arrhenius law. The activation energy of the diffusion process is (318±7)kJ/mol, similar to that corresponding to self-diffusion in α-Ti. On the other hand, the measured values of D are systematically lower than those corresponding to self-diffusion by a factor of approximately 5. This reduction could be explained by taking into account the mass difference between Ta and Ti. An increase of the diffusion coefficient was measured when the diffusion proceeds on a less pure Ti (99.9%) matrix. This increment is higher at lower temperatures. Received: 12 November 2001 / Accepted: 12 March 2002 / Published online: 5 July 2002 RID="*" ID="*" RID="*" ID="*" RID="**" ID="**"Corresponding author. Fax: +54-11/6772-7362, E-mail: dyment@cnea.gov.ar RID="*" ID="*"Members of the Carrera del Investigador Científico del Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), Argentina     

Second-order optical non-linearity of proton exchanged lithium tantalate waveguides

A detailed correlation between the fabrication conditions, crystallographic phase state of H_xLi_1-xTaO₃ waveguides and second-order optical non-linearity has been investigated by using reflected SHG measurements from the polished waveguide end face. The non-linearity, strongly reduced after the initial proton exchange, is found to be restored and even increased after annealing. However, this apparent increase in the non-linearity is accompanied by a strong degradation of the quality of the SHG reflected beam in the region of the initial as-exchanged waveguide due to beam scattering. The high temperature proton exchange technique has been shown to produce high-quality α-phase waveguides with essentially undegraded non-linear optical properties. There is no phase transition when the α-phase waveguides are fabricated by direct exchange. This phase presents the same crystalline structure as that of LiTaO₃ and maintains the excellent non-linear properties of the bulk material. The results obtained are important for the design, fabrication and optimization of guided-wave non-linear optical devices in LiTaO₃. Received: 21 May 2001 / Published online: 23 October 2001     

Experimental access to doped fullerene polymers

60 compound could be obtained by slow cooling the high temperature fcc phase and by quenching with subsequent annealing. The various phases after quenching and during annealing were studied in detail. No evidence for a direct doping of undoped C₆₀ to the polymeric AC₆₀ phase was found. Due to the local character of the doping process the formation of A₃C₆₀ clusters is observed. The same results were obtained from doping experiments performed with undoped polymeric structures like phototransformed and pressure polymerized C₆₀. Received: 6 October 1996/Accepted: 13 December 1996     

Planar Er- and Yb-doped amplifiers and lasers

New results in erbium-doped planar waveguide amplifiers and lasers are presented. The waveguides are produced in silica-on-silicon technology using plasma-enhanced chemical vapor deposition. Waveguide propagation losses outside the erbium absorption band are improved to values below 0.05 dB/cm for a core–cladding index step of around 1.4%. Amplifier arrays show a net gain of more than 12 dB over the entire C-band. Received: 13 June 2001 / Published online: 23 October 2001     

Fabrication of sol-gel-derived optical waveguide on InP for hybridized photonics applications

In this paper, we report on the first successful fabrication, using spin-coating and low-temperature (200 °C) annealing, of organically modified sol-gel planar optical waveguides on InP substrates. Considering the fact that the sol-gel technique is simple and cheap, and III-V compound semiconductors are the essential substrate materials for manufacturing data communication devices, we believe that our demonstration of optical waveguiding in sol-gel-derived waveguides on III-V compound semoconductors is interesting. It opens the possibility of hybridizating traditional glass or optical-crystal-based integrated optics with III-V compound semiconductor-based optoelectronics. Received: 4 August1999 / Accepted: 6 August 1999 / Published online: 16 September 1999     

Lead diffusion in α-Zr

Pb diffusion in α-Zr matrix between 823 and 1123 K was measured using heavy ion Rutherford backscattering spectrometry (HIRBS) technique. A deviation from the Arrhenius law was observed, with two different regions. At low temperatures the activation energy Q is close to the expected value for a substitutional diffuser but the pre-exponential factor D₀ is higher than expected. Close to the phase transition temperature the opposite occurs, with a low Q value. This behavior is similar to the one observed for Hf and self-diffusion in α-Zr. Received: 29 September 1998 / Accepted: 29 January 1999 / Published online: 28 April 1999     

CdTe epilayers for uses in optical waveguides

CdTe epilayers have been grown by vapor phase epitaxy (VPE) on glass, MgO, sapphire, LiNbO₃ and mica substrates. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) studies show the good structural quality of the epilayers. In these epilayers, a few optical modes were excited with a 1.33-μm laser. The measured propagation losses were in the range between 5 dB/cm and less than 0.5 dB/cm. From dark-mode m-lines, the epilayer thickness was found to be in the 1–3 μm range, in good accord with that obtained by SEM measurements. The refractive index obtained from the fitting is also in good accord with that of bulk CdTe. Received: 7 October 1999 / Accepted: 13 March 2000 / Published online: 5 July 2000     

Electrical fixing of waveguide channels in strontium-barium niobate crystals

We demonstrate a new method of electrical fixing of waveguiding channels in strontium-barium niobate. The method is applicable to both bulk material and planar SBN waveguides. Waveguiding is achieved for extraordinarily polarized light. We suggest that the fixing is based on a partial depoling of the crystal rather than on internal electric fields. Received: 29 January 2001 / Published online: 27 April 2001     

Poling dynamics of lithium niobate crystals

Ferroelectric domain reversal via electric field poling of congruently melting lithium niobate (LiNbO₃) crystals is investigated. An electro-optic interferometric observation technique reveals spatial and temporal dynamics of the poling process. Starting from seeds, the domains grow until the entire crystal has a switched polarization. During the switching process the boundaries are preferentially aligned along the crystallographic axes. The coercive field between two sequenced domain inversions is transiently reduced after a poling event, and recovers exponentially with a time constant of about half a minute. No light-induced change of the recovery time constant, neither with green nor with ultraviolet light, is observed. The results are of relevance for domain engineering of LiNbO₃ crystals. Received: 6 February 2003 / Published online: 9 April 2003 RID="*" ID="*"Corresponding author. Fax: +49-228/734038, E-mail: wengler@physik.uni-bonn.de     

Oxygen diffusion barriers using a new sacrificial design concept for future high-density memory devices

We emphasize the importance of the new design concept for diffusion barriers in high-density memory capacitors. RuTiN and RuTiO films are proposed as sacrificial oxygen diffusion barriers. They showed much lower sheet resistance up to 800 °C than various barriers including binary and ternary nitrides, reported by others. The contact resistance for both the Pt/RuTiN/TiSi_x/n⁺⁺poly-plug/n⁺channel layer/Si and the Pt/RuTiO/RuTiN/TiSi_x/n⁺⁺poly-plug/n⁺channel layer/Si contact structures, the most important electrical parameter for the diffusion barrier in the bottom-electrode structure of capacitors, exhibited values as low as 5 kΩ, even after annealing up to 750 °C. When each RuTiN and TiN film is inserted as a glue layer between the bottom electrode Pt layer in the CVD–BST simple stack-type structure, the thermal stability of the RuTiN glue layer is observed to be 150 °C higher than that of the TiN glue layer. Moreover, the capacitance of the PVD–BST simple stack-type structure with a TiN glue layer initially degrades after annealing at 500 °C, and thereafter failed completely. In the case of RuTiN and the RuTiO/RuTiN glue layers, however, the capacitance continuously increased up to 550 °C. These new experimental results accommodate the introduction of the sacrificial design concept of diffusion barriers against oxygen in high-density memory capacitors. Received: 6 February 2002 / Accepted: 4 March 2002 / Published online: 26 February 2003 RID="*" ID="*"Corresponding author. Fax: +82-31/360-4545, E-mail: dongsoo.yoon@hynix.com     

Low energy RBS and SIMS analysis of the SiGe quantum well

The Ge concentration in a MBE grown SiGe and the depth of the quantum well has been quantitatively analysed by means of low energy Rutherford backscattering (RBS) and secondary ion mass spectrometry (SIMS). The concentrations of Si and Ge were supposed to be constant, except for the quantum well, where the nominal germanium concentration was at 5%. Quantitative information was deduced out of raw data by comparison to SIMNRA simulated spectra. With the knowledge of the response function of the SIMS instrument (germanium delta (δ) layer) and using the model of forward convolution (point to point convolution) it is possible to determine the germanium concentration and the thickness of the analysed quantum well out of raw SIMS data.     

Praseodymium-doped Ti:LiNbO3 waveguides

3 by diffusion doping is investigated by means of secondary neutral mass spectrometry and secondary ion mass spectrometry. The diffusion of praseodymium in LiNbO₃ can be described by Fick’s laws of diffusion with a concentration-independent diffusion coefficient and a limited solubility of praseodymium in LiNbO₃ increasing exponentially with rising temperature. The diffusion depends on the Li₂O content of the LiNbO₃ crystal. For LiNbO₃ crystals with a nominal slight difference in the congruent composition, the diffusion constants and activation energies for Z-cut LiNbO₃ are 3.28×10^-5 cm²/s and 2.27 eV, and 1.39×10^-5 cm²/s and 2.24 eV, respectively. Titanium-doped waveguides are formed in Pr:LiNbO₃ and characterised in relation to waveguide loss and absorption in the visible and near infrared. Received: 17 September 1998 / Accepted: 11 November 1998     

Low-loss, damage-resistant optical waveguides in Zn-diffused LiNbO3 by a two-step procedure

In the present work the fabrication of high-quality LiNbO₃ waveguides, based on Zn diffusion from vapor phase using a two-step diffusion process, has been demonstrated. The optical waveguides fabricated using this method have low propagation losses (less than 0.5 dB/cm measured at 633 nm), as a consequence of the high surface quality obtained. High photorefractive damage resistance is reported, and it has been related to the Zn incorporation into the LiNbO₃ crystals. Additional advantages of this waveguide fabrication method due to the low temperature of the process (<900 °C) are to prevent Li out-diffusion and to preserve ferroelectric domain structures. Received: 2 March 2000 / Accepted: 21 June 2000 / Published online: 13 September 2000     

2D and 3D SIMS investigations on sintered steels

Powder metallurgy (PM) is a well-established method for manufacturing ferrous precision parts. Sintering is one of the important production steps and can be strongly enhanced (activated) by formation of a liquid phase during the sintering process. The liquid phase can be reached by the addition of alloying elements (e.g., copper) or sintering activators (e.g., phosphorus) and is formed by melting of eutectic phase mixtures or by incipient melting. The main investigations presented in this work are done by secondary ion mass spectrometry (SIMS): 2D and 3D elemental distribution. Additionally, impact energy and hardness measurements were performed in order to study the influence of phosphorus on mechanical properties. The concentration of P in different samples was varied between 0 and 1 weight percent (wt.%), the carbon content was consistently 0.5 wt.%. Nominal specimens were sintered at 1120 and 1250 °C in protective atmosphere of flowing nitrogen to determine the influence of sintering temperature.     

Femtosecond waveguide writing: a new avenue to three-dimensional integrated optics

Using tightly focussed femtosecond laser pulses, waveguides can be fabricated inside various glasses and crystals. This technique has the potential to generate not only planar but three-dimensional photonic devices. In this paper we present, to the best of our knowledge, the first true three-dimensional integrated optical device, a 1×3 splitter fabricated in pure fused silica. The optical properties of this device and possibilities for the fabrication of complex high-density integrated optical elements are discussed. Received: 23 December 2002 / Accepted: 6 January 2003 / Published online: 28 March 2003 RID="*" ID="*"Corresponding author. Fax: +49-3641/65-7680, E-mail: nolte@iap.uni-jena.de     

XPS surface analysis of monocrystalline silicon solar cells for manufacturing control

X-ray photoelectron spectroscopy (XPS) has been applied to surfaces of silicon wafers in the different stages of the assembly line for large-scale monocrystalline silicon solar cell manufacturing (ISOFOTON, Malaga, Spain). XPS results have shown that a considerable amount of carbon is present on the pyramidal-textured monocrystalline silicon surface. This amount decreases slightly but is still present after the process of phosphor diffusion (p-n junction), as well as after subsequent calcination in humid air for SiO₂ film formation (passivation). This amount of carbon may be buried during the process of CVD coating an anti-reflection TiO₂ film. After calcination of the film in order to obtain the TiO₂ rutile phase, an even higher amount of carbon is detected on the TiO₂ anti-reflection coating surface. This indicates that not all organics from the tetra-isopropile ortho-titanate (TPT) precursor were released from the film. Furthermore, in this case phosphor is found in excess on the SiO₂ wafer surface (dead layer) and also on the rutile TiO₂ surface, indicating that an extra phosphor diffusion from the bulk silicon through the TiO₂ film has taken place during calcination. These results demonstrate how thermal treatments applied in the solar cell manufacturing assembly line can influence and may change the intended compositional distribution. These treatments may also introduce defects that act as recombination centres for charge carriers in the solar cell device. Received: 13 September 2000 / Accepted: 10 January 2001 / Published online: 3 May 2001     

Reconstruction of extraordinary refractive index profiles of optical planar waveguides with single or double modes fabricated by O ion implantation into lithium niobate

A method named intensity calculation method (ICM), which is based on beam propagation method (BPM) and image processing, was carried out to reconstruct the extraordinary refractive index profile (RIP) of single-mode planar waveguide in lithium niobate (LiNbO₃), which was fabricated by multi-energy megaelectron-volt (MeV) O²⁺ ion implantation. In addition, it has been proved reasonable that the alternation of extraordinary refractive index induced by ion implantation into LiNbO₃ is mainly due to the degradation of polarization and reduction of material physical density. As a result, the possible extraordinary RIP of the double-mode planar waveguide could be reconstructed using BPM according to such a hypothesis and the calculated guiding mode values. The end-fire coupling and m-line arrangements were carried out to obtain the near-field modal patterns and dark-mode spectra of waveguides, respectively.     

Study of optical waveguide of barium sodium niobate films on potassium titanyl phosphate

Barium sodium niobate (BSN) optical waveguide films were grown on potassium titanyl phosphate (KTP) substrate by pulsed laser deposition (PLD). X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray pole spectroscopy, and X-ray photoelectron spectroscopy (XPS) showed that the as-grown BSN films are epitaxially smooth, fine-particled and show small constituent deviation. Both m lines of the waveguided TE and TM modes were recorded. Lattice match between the BSN(110) and both the KTP(001) and KTP(100) planes is examined with mismatch less than 3%. Effective refractive indices as a function of incident wavelength and order of the waveguided modes are studied. A phase matching relationship of k ⁽¹⁾−2k ⁽⁰⁾=0 is established between the first-order and fundamental modes in the BSN/KTP waveguided system. Effective thicknesses for TE and TM modes were obtained to be equal to 0.76 and 0.72 μm, respectively, larger than the thickness of the as-grown BSN film of 0.60 μm. A constituent ratio of Ba:Na:Nb in the BSN film measured was equal to 2:0.82:5.14, slightly deviating from the stoichiometric ratio of 2:1:5, which is attributed to higher relative asymptotic velocity for Nb species and higher evaporation pressure for Na species. Finally, the main factors affecting quality of the as-grown BSN films are also discussed. Received: 26 March 1999 / Accepted: 30 March 1999 / Published online: 19 August 1999