纳米压印技术制备表面光子晶体LED的研究

利用表面光子晶体能大幅提高发光二极管(LED)的外量子效率, 但如何制备大面积的纳米光子晶体是该研究方向的主要难点之一. 本文基于纳米压印技术在氮化镓基发光二极管(GaN-LED)表面制作孔状二维光子晶体. 通过以金属和聚合物双层掩膜干法刻蚀法, 得到了很好的光子晶体图形转移效果. 最终在LED的p-GaN层表面获得了大面积光子晶体, 周期为450 nm, 纳米孔直径为240 nm. 器件测试结果显示, 有表面光子晶体的LED比没有光子晶体的LED, 光致发光强度峰值提高到了7.2倍.     

表面为二维光子晶体结构的AlGaInP系发光二极管的研究

近年来,GaN基光子晶体发光二极管(light emitting diode,LED)的研究已经取得了一定的进展,利用光子晶体的光子带隙效应和光栅衍射原理,在LED上制作光子晶体结构将会提高出光效率.本文为了提高AlGaInP系LED的光提取效率,分析了常规LED光提取效率受到限制的原因,将光子晶体结构引入了AlGaInP系LED的器件结构设计,通过理论分析与实验验证,结果显示:光子晶体结构对于提高AlGaInP系LED的光提取效率同样起到了明显的效果,引入光子晶体后,LED的输出光强比常规结构LED平均 关键词： AlGaInP系LED 光子晶体 光提取效率 光强     

The influence of the coating metals with various work function on the photoluminescence of a GaN-based blue LED wafer

A GaN light emitting diodes (LED) wafer was coated with Pt, Au, Al and In. The photoluminescence (PL) excited from wafer back shows that Pt and Au coating can quench the PL while In and Al can increase the PL intensity by eight times and make the wavelength red shift. When connected to the Pt with a wire, indium can also quench the PL. The potential difference between any two kinds of the metals was measured and the PL intensity from each coated area showed a remarkable pertinence to the coating metal potentials. A built-in potential barrier model is proposed to explain results.     

利用介质光子晶体提高红光发光二极管的光通量的研究

本文利用光子晶体的光栅衍射原理, 在发光二极管(light emitting diode, LED)上制作了光子晶体结构以提高出光效率. 在红光LED器件中引入了SiO₂层的介质光子晶体结构, 并进行了相应的理论分析和实验验证. 结果表明: 介质光子晶体结构对于提高红光LED器件的光提取效率有显著效果, 引入介质光子晶体后, 红光LED的光通量比普通LED增加了26%.     

GaN-based light-emitting diodes directly grown on sapphire substrate with holographically generated two-dimensional photonic crystal patterns

As an approach to enhance light extraction from GaN-based light-emitting diodes (LEDs), we inserted a submicron period photonic crystal (PC) pattern at the interface between GaN epilayer and sapphire substrate. A two-dimensional square-lattice pillar array of 600-nm period was produced directly onto the sapphire substrate by a combination of laser holography and inductively-coupled-plasma etching. A standard GaN LED heterostructure was grown on top of the nano-patterned substrate, which was then processed to conventional bottom-emitting LED chips. At the drive current of 20 mA, the PC-LED produced surface-normal output power about 40% higher than that of the reference LED (with no PC integrated). Temperature-dependent photoluminescence measurement indicated that the emission enhancement was solely a structural effect by the integrated PC pattern.     

Directional emission from rare earth ions in inverse photonic crystals

Angular distribution of the photoluminescence from trivalent rare earth ions (Eu³⁺) embedded inside a magnesium silicate photonic crystal with an inverse opal structure is experimentally and theoretically studied. The emission at frequencies near the first stop-band of the photonic crystal is shown to exhibit strong angular modulation. The angle-dependent Eu³⁺ photoluminescence is numerically simulated by evaluating the fractional density of optical states in the photonic crystal, with diffuse scattering on structural imperfections taken into account. Experimental data for the emission properties of thin inverse opal films are shown to be in agreement with the simulation results. PACS 42.70.Qs; 78.55.-m     

Electromagnetic modes in semi-infinite photonic crystals

In a real photonic crystal, there exist three modes: propagation mode, evanescence mode and surface mode. Using ideal modal, semi-infinite photonic crystals, we study their effects on the transmission spectrum of photonic crystals, respectively. Because there exists only one air–crystal interface in a semi-infinite photonic crystal, no multiple reflection occurs and no evanescent modes and backward-propagating modes exist in this structure. The effects of the evanescence modes are studied by comparing the transmission spectrum of a finite-thickness photonic crystal slab and that of a semi-infinite photonic crystal. In addition, the effects of the backward-propagating modes are investigated using a coated semi-infinite photonic crystal structure. Finally, we study the effects of the surface modes, and find that the transmission spectrum of a semi-infinite photonic crystal is strongly dependent on its termination.     

光子晶体发光二极管

利用光子晶体的光子禁带和光栅衍射效应可以提高LED的出光效率,扩大LED的应用范围。总结了光子晶体发光二极管的原理和典型器件。通过比较表明,与光子禁带效应相比,利用光栅衍射效应提高LED出光效率的方法更适用于电注入发光。因此可望用更廉价的方法在LED表面制造光子晶体,可通过光栅衍射效应来有效地提高其出光效率。     

双层光子晶体氮化镓蓝光发光二极管结构优化的研究

为了提升氮化镓(GaN)蓝光发光二极管(LED)光提取效率, 设计了双层光子晶体LED模型. 提出等效折射率近似方法, 简化求解了结构中的介质波导模式分布. 从而对模型中顶层光子晶体刻蚀深度d, 嵌入式光子晶体厚度T及其距有源层距离D等结构参数进行了优化. 同时利用时域有限差分方法对优化结果进行了验证. 相比其他仿真方法, 模式分析极大地减少了对LED建模优化的计算复杂度, 同时从理论上阐明了不同结构参数变化引起LED光提取效率改变的原因. 研究发现, 当顶层光子晶体满足d ≈ λ / n_PhCs 时, 结构内大部分高阶导模尚未被截断但源区能量向低阶导模的转化被有效抑制, 光提取效率给出极大值. 嵌入式光子晶体的引入将激发覆盖层模式, 当满足100 nm≤ T ≤ 300 nm且100 nm≤ D ≤ 200 nm 时, 覆盖层模式可以从有源层获得较大能量并有效地与顶层光子晶体耦合, 极大地提升了光提取效率. 本文优化结果使得LED光提取效率提升了4倍, 对高性能GaN蓝光LED的设计制造具有重要意义.     

非故意掺杂GaN层厚度对蓝光LED波长均匀性的影响

通过调整非故意掺杂氮化镓层的厚度,分析氮化镓基LED外延生长过程中应力的演变行为,以控制外延片表面的翘曲程度,从而获得高均匀性与一致性的外延片。由于衬底与外延层之间的热膨胀系数差别较大,在生长温度不断变化的过程中,外延片的翘曲状态也随之改变。在n型氮化镓生长结束时,外延片处于凹面变形状态。在随后的过程中,外延薄膜"凹面"变形程度不断减小,甚至转变为"凸面"变形,所以n型氮化镓生长结束时外延片的变形程度会直接影响多量子阱沉积时外延片的翘曲状态。当非掺杂氮化镓沉积厚度为3.63μm时,外延片在n型氮化镓层生长结束时变形程度最大,在沉积多量子阱时表面最为平整,这与PLmapping测试所得波长分布以及标准差值最小相一致。通过合理控制非故意掺杂氮化镓层的厚度以调节外延层中的应力状态,可获得均匀性与一致性良好的LED外延片。     

无序光子晶体提高GaN基蓝光发光二极管光提取效率的研究

亚波长尺度光子晶体结构可有效提升发光二极管(LED)的光提取效率(LEE),然而在制造过程中会存在缺陷或无序.利用时域有限差分法对理想方形光子晶体结构进行了优化,在此基础上对三种无序光子晶体结构进行了仿真,研究了光子晶体结构参数的无序变化对GaN基蓝光LED LEE的影响.结果表明,光子晶体空气孔位置和半径的无序变化使优化的80 nm光子晶体LED的LEE下降,而可使非优化的60nm光子晶体LED的LEE增加;当光子晶体空气孔位置和半径的无序变化量从0到士20 nm之间变化时,LEE最大会产生53.8％的浮动;光子晶体刻蚀深度的无序变化对LEE影响较小,一般可以忽略,研究结果为高性能蓝光光子晶体LED的设计制作提供了重要的理论参考.     

二维光子晶体提高C波段LED出光效率的研究

片上集成光源是未来光电子系统中光源发展的主要趋势,LED光源作为片上集成光源的主要缺点是其出光效率低,二维光子晶体是提高LED出光效率的有效手段。本工作设计了C波段LED的基本结构及参数,并采用时域有限差分法计算了不同阵列不同占空比的二维光子晶体能带结构,利用禁带理论选取提高C波段LED出光效率的最优二维光子晶体结构参数,结果表明三角排列空气孔二维光子晶体晶格常数a=500 nm且占空比R_p=0.44的光子晶体结构最优。     

Modified Spontaneous Emission from Dye Molecules inside a Photonic Crystal Microcavity

We fabricate a photonic crystal microcavity containing Alq3 in a sandwiched structure by the self-assemble method. The angle-dependent photoluminescence （PL） spectra and the variation of the PL lifetime demonstrate the effect of the photonic band gap on the spontaneous emission of Alq3 in the photonic crystals.     

GaN基蓝光LED中光子晶体对提取效率及发光偏振态的影响

为了提高氮化镓基蓝光发光二极管的发光提取效率,在其电流扩展层上生长光子晶体.讨论了光子晶体结构周期、刻蚀深度和占空比参数与提取效率的关系,并采用时域有限差分法进行模拟计算.结果表明在晶格周期为300nm、占空比为60%和刻蚀深度为200nm的条件下,生长光子晶体结构后,氮化镓基蓝光发光二极管的提取效率提升了27.93%.研究了激励源在光子晶体晶格周期内位置变化对提取效率的影响,拟合得到更符合实际物理意义的氮化镓基蓝光发光二极管发光提取效率函数.利用等效折射率理论和法布里-珀罗薄膜干涉模型解释了氮化镓基蓝光发光二极管中TE模和TM模偏振之间提取效率的差异,数值仿真得到最大差异值为1.442倍,从而获得高偏振对比度光源.用该结构参数制备的发光二极管器件应用于液晶显示背光源,可提高液晶显示的能耗效率.     

平板型光子晶体谐振腔性能分析

介绍了一种平板型光子晶体微谐振腔的结构.利用三维时域有限差分法(FDTD)分析了平板型光子晶体的结构参量及其对谐振腔性能的影响.平板型光子晶体微腔具有较小的模式体积和较大的品质因子(Q),可以有效的使光子局域化.该谐振腔可以用来制造单频发光二极管和零阈值微腔激光发射器.     

Photonic crystal waveguides and their applicationsInvited Paper

Two-dimensional (2D) slab photonic crystal waveguides (PCWGs) on silicon-on-insulator (SOI) wafer were designed and fabricated. Full photonic band gap, band gap guided mode, and index guided mode were observed by measuring the transmission spectra. Mini-stop-bands in the PCWG were simulated with different structure parameters. Coupling characteristics of PCWG were investigated theoretically considering the imperfections during the fabrication process. It was found that suppressing power reservation effect can realize both short coupling length and high coupling efficiency.     

Effect of photonic bandgap on luminescence from silicon nanocrystals

The modification of the luminescence of silicon nanocrystals experiencing the effect of a photonic bandgap in a 2D photonic crystal was investigated. The time-integrated photoluminescence spectra detected in the plane of the photonic crystal revealed a dip in the light emission corresponding to the wavelength of the bandgap, whose position changes according to the geometry of the prepatterned pillar array. The calculated emission pattern for a pointlike dipole placed in such a structure suggests an inhibition of the spontaneous emission rate at certain directions as a physical reason for the observed modification of luminescence.     

Ultrafast opto-terahertz photonic crystal modulator

We present an agile optically controlled switch or modulator of terahertz (THz) radiation. The element is based on a one-dimensional photonic crystal with a GaAs wafer inserted in the middle as a defect layer. The THz electric field is enhanced in the photonic structure at the surfaces of the GaAs wafer. Excitation of the front GaAs surface by ultrashort 810 nm laser pulses then leads to an efficient modulation of the THz beam even at low photocarrier concentrations (approximately 10(16) cm(-3)). The response time of the element to pulsed photoexcitation is about 130 ps.     

Controlling the orientation of ZnO nanorod arrays using TiO<Subscript>2</Subscript> thin film templates dip-coated by sol–gel

The oriented ZnO nanorod arrays have been synthesized on a silicon wafer that coated with TiO₂ films by aqueous chemical method. The morphologies, phase structure and the photoluminescence (PL) properties of the as-obtained product were investigated by field-emission scanning electron microscopy (FE-SEM), X-ray diffractometer (XRD), transmission electron microscope (TEM) and PL spectrum. The nanorods were about 100 nm in diameter and more than 1 μm in length, which possessed wurtzite structure with a c axis growth direction. The room-temperature PL measurement of the nanorod arrays showed strong ultraviolet emission. The effect of the crystal structure and the thickness of TiO₂ films on the morphologies of ZnO nanostructures were investigated. It was found that the rutile TiO₂ films were appropriate to the oriented growth of ZnO nanorod arrays in comparison with anatase TiO₂ films. Moreover, flakelike ZnO nanostructures were obtained with increasing the thickness of anatase TiO₂ films.     

Single layer silicon photonic crystal slab

We present here the fabrication and characterization of single layer silicon photonic crystal mirror on a silicon-on-insulator wafer. By a combination of electron beam lithography, fast atom beam etching with deep reactive ion etching, silicon photonic crystal slabs are achieved on 260 nm freestanding silicon membrane and sandwiched with air on the top and bottom. Their high refractive index contrasts enable photonic crystal slabs function as dielectric mirrors for externally incident light. The optical performances of fabricated photonic crystal slabs can be tuned by varying the width of separation grooves or the air-hole size, which represents a significant advantage of offering various approaches for optical response control.