Interaction between oppositely directed compression plasma flows

The dynamics of the interaction of two oppositely directed plasma flows generated by miniature gas-discharge magnetoplasma compressors is studied. The maximum plasma electron temperature and density in the region where the plasmas interact are found to be 4.5 eV and 1.4⋅10¹⁷ cm^–3. Exposure of samples to this kind of plasma near the interaction region leads to an energy flux at the surface of 2–8 J/cm², which is sufficient for modification of the surface properties of various materials.     

Nonlinear transformation of a spectrum of femtosecond laser pulses in a gas-filled microcapillary

Features of light pulse propagation and nonlinear optical transformation of the spectrum generated by titanium-sapphire laser pulses (τ_0.5 = 27 fs, λ₀ = 790 nm) have been studied experimentally in a 50-cm cylindrical hollow waveguide (microcapillary with 280-μm diameter core) filled with gaseous molecular nitrogen and helium. Stable guided propagation of light pulses with an intensity of ~1.5⋅10¹⁴ W/cm² in the fundamental EH₁₁ mode of the gas-filled capillary has been demonstrated. Exact focusing of the laser light made it possible to obtain rather high relative (≥95%) and absolute (~60%) energy transmission efficiencies for the pulses at gas pressures equal to or lower than 760 Torr. A method to determine the nonlinear phase shift of the pulses has been proposed. Values of the nonlinear refractive index n₂ ≈ 4.5⋅10^–23 cm²/(W⋅Torr) (N₂) and n₂ ≈ 2.8⋅10^–23 cm²/(W⋅Torr) (He) have been found. A short-wavelength shift in addition to the Kerr nonlinearity has been shown to be contributed by the generated electron plasma at high pulse intensities (≥10¹⁴ W/cm²).     

Three-dimensional simulation of laser–plasma-based electron acceleration

A sequential three-dimensional (3D) particle-in-cell simulation code PICPSI-3D with a user friendly graphical user interface (GUI) has been developed and used to study the interaction of plasma with ultrahigh intensity laser radiation. A case study of laser–plasma-based electron acceleration has been carried out to assess the performance of this code. Simulations have been performed for a Gaussian laser beam of peak intensity 5 × 10¹⁹ W/cm² propagating through an underdense plasma of uniform density 1 × 10¹⁹ cm^− 3, and for a Gaussian laser beam of peak intensity 1.5 × 10¹⁹ W/cm² propagating through an underdense plasma of uniform density 3.5 × 10¹⁹ cm^− 3. The electron energy spectrum has been evaluated at different time-steps during the propagation of the laser beam. When the plasma density is 1 × 10¹⁹ cm^− 3, simulations show that the electron energy spectrum forms a monoenergetic peak at ~14 MeV, with an energy spread of ±7 MeV. On the other hand, when the plasma density is 3.5 × 10¹⁹ cm^− 3, simulations show that the electron energy spectrum forms a monoenergetic peak at ~23 MeV, with an energy spread of ±7.5 MeV.     

Forward plasma emission through laser–foil interaction with nanosecond lasers

Fundamental investigations of plasma diagnostics of a forward laser plasma acceleration employing laser–foil interactions were conducted for an Al-foil target irradiated with an Nd:YAG laser of 1 J/pulse with pulse width of 10 ns. Temporal evolutions of electron temperatures and densities were evaluated with electrostatic probes and spectroscopic diagnostics. From the results, it was shown that an average speed of ions in a forward direction was about 40 km/s. Also, it was shown that the plasma temperature and density were about 2.5–8 eV and 10¹⁰ cm⁻³, respectively.     

A comparative study of the ionic keV X-ray line emission from plasma produced by the femtosecond,picosecond and nanosecond duration laser pulses

We report here an experimental study of the ionic keV X-ray line emission from magnesium plasma produced by laser pulses of three widely different pulse durations (FWHM) of 45 fs, 25 ps and 3 ns, at a constant laser fluence of ∼1.5 × 10⁴ J cm^− 2. It is observed that the X-ray yield of the resonance lines from the higher ionization states such as H- and He-like ions decreases on decreasing the laser pulse duration, even though the peak laser intensities of 3.5 × 10¹⁷ W cm^− 2 for the 45 fs pulses and 6.2 × 10¹⁴ W cm^− 2 for the 25 ps pulses are much higher than 5 × 10¹² W cm^− 2 for the 3 ns laser pulse. The results were explained in terms of the ionization equilibrium time for different ionization states in the heated plasma. The study can be useful to make optimum choice of the laser pulse duration to produce short pulse intense X-ray line emission from the plasma and to get the knowledge of the degree of ionization in the plasma.     

Hardnes and resistivity of amorphous carbon thin films deposited by laser ablation

Amorphous carbon thin films were deposited by laser ablation of a graphite target, using the fundamental line of a 5 ns Nd:YAG laser. Deposition was carried out as a function of the plasma parameters (mean kinetic ion energy and plasma density), determined by means of a planar probe. In the selected working regimes the optical emission from the plasma is mainly due to atomic species, namely C⁺ (426.5 nm); however, there is also emission from other atomic species and molecular carbon. The hardness and resistivity could be varied in the range between 10 and 25 GPa, and 10⁸ and 10¹¹ Ω cm, respectively. The maximum values were obtained at a 200 eV ion energy and 6×10¹³ cm⁻³ plasma density, where the maximum quantity of C–C sp³ bonds was formed, as confirmed by Raman spectroscopy.     

Diffusion and solubility of electrically active iron atoms in gallium arsenide

Iron diffusion in GaAs at arsenic pressure 1 atm is studied. The temperature dependences of the diffusion coefficient and solubility of electrically active iron atoms in GaAs are determined. The dependences can be described by the Arrhenius equations with the following parameters: D ₀ = 1.61 cm²/s and E = (2.16 ± 0.47) eV (for diffusion) and N _S ⁰ = 4.62 ⋅ 10²³ cm⁻³ and E _S = (1.61 ± 0.16) eV (for solubility). The results obtained are compared with the earlier published data. The concentration of electrically active iron atoms is shown to be about 2 times lower than the total iron concentration in GaAs. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 39–41, November, 2008.     

Trap-centers of self-interstitials in silicon

Deep-level profiles were measured radially acrossn-type FZ silicon wafers containing A-swirl defects by applying DLTS to an array of Schottky contacts. The trapparameters were obtained very accurately using a computer-fit procedure for the full DLTS peaks. Two acceptor levels atE _c −0.49 eV (σ _n =6.6×10⁻¹⁶cm²) andE _c −0.07 eV (σ _n =4.6×10⁻¹⁶cm²) were observed, which varied oppositely to the A-swirl defect density. At short ranges (1–2mm) the trap concentration-profile was smeared out and did not follow the strong fluctuations in the etch pattern. Both levels were measured together with the same concentration. The profiles indicate outdiffusion. A level atE _c −0.14 eV (σ _n =1.1×10⁻¹⁶cm²) was not related to A-swirl defects. A level atE _c −0.11 eV (σ _n =1.1×10⁻¹⁵cm²) was only detected in one ingot. The properties of the deep level atE _c −0.49 eV are discussed in the light of published DLTS results reported for γ-irradiation, laser annealing after self-implantation, annealing under pressure and oxidation of silicon samples. It is concluded, that this level is related to interstitial silicon rather than to an impurity.     

Characteristics of thermally stimulated depolarization phenomena in zinc-oxide ceramics for varistors

The results of experimental investigations and an analysis of the temperature dependences of the thermally stimulated depolarization current are presented for zinc-oxide ceramics suitable for use in high-voltage varistors. A model for the depolarization phenomena is proposed that takes into account charge exchange on localized electronic states on both sides of the intercrystallite potential barrier. The model is used to obtain estimates of the ionization energy and density of shallow (∼0.07 eV, 1×10¹⁷ cm⁻³) and deeper (∼0.2 eV, 1×10¹⁸ cm⁻³) bulk levels and surface-localized levels (∼0.1 eV, 1×10¹³ cm⁻²). Zh. Tekh. Fiz. 67, 60–63 (October 1997)     

Target plasma formation by UHF power

The properties of plasma injected into an open magnetic trap of uniform field from an independent UHF source have been investigated. Plasma is created in the UHF source at the frequency of 2400 MHz (power input 150 W) in the electron cyclotron resonance (ECR) regime at the pressure of neutral argon (10⁻⁵−10⁻²) torr. It is established that a rather quiescent target plasma with controlled density within the range of (2 × 10⁸−2 × 10¹²) cm⁻³ and temperature 2–3eV is accumulated in the trap. It turned out that plasma lifetime in the trap is determined by a classical mechanism of particle escape at the expense of collisions, at fixed value of magnetic field in the trap it practically is not changed with the variation of neutral gas pressure and reaches the value ≈ 4×10⁻³ s at the magnetic field strength in the trap equal 1600 Oe.     

Nd: YAG laser annealing of gallium-implanted silicon

A Q-switched Nd: YAG laser with a pulse duration of 20 ns was used to investigate effects of laser annealing in gallium implanted silicon. Rutherford backscattering and Hall-effect measurements were performed to evaluate the annealed layer. Differential Hall-effect measurements were carried out to obtain carrier concentration profiles after annealing. It was found that a maximum sheet carrier concentration of 8×10¹⁵ cm⁻² can be obtained for a gallium implantation of 10¹⁶ cm⁻² by laser annealing with an energy density of more than 1.0 J cm⁻². Although the peak carrier concentration was found to be 8.0×10²⁰ cm⁻³, the annealed layer showed polycrystalline structures even after annealing with an energy density up to 4J cm⁻². The annealing took place in the solid phase in this energy density range.     

Concentration profiles during films deposition from a low-energy ion beam

An ion beam is described in the diffusion approximation, and a mathematical model of thin-film deposition process is developed. The volume profiles of concentration of components during nickel film deposition on a copper substrate are calculated for ion energies of 100, 200, and 400 eV and ion flux densities I = 10¹⁵, 10¹⁶, and 10¹⁷cm⁻²·s⁻¹. The deposition model parameters are estimated using programs SUSPRE and SRIM. The concentration profiles of the components are compared for the corresponding numerical values of the model parameters. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 27–34, March, 2007.     

Pulsed laser deposition of BiCuOSe thin films

Undoped and 10% Ca-doped BiCuOSe thin films are prepared by pulsed laser deposition without ex-situ processing. The influence of the preparation conditions on structure and properties of Bi_0.9Ca_0.1CuOSe thin films on amorphous silica substrates is studied. The highest achieved concentration and mobility of free holes (3.9×10²⁰ cm⁻³ and 3.5 cm²/Vs) was close to that measured in strongly c-axis oriented samples on SrTiO₃ substrates (4.0×10²⁰ cm⁻³ and 7.5 cm²/Vs). The Bi_0.9Ca_0.1CuOSe films on SrTiO₃ show almost temperature-independent Seebeck coefficient and their resistivity increases with increasing temperature. The Seebeck coefficient of undoped BiCuOSe films on SrTiO₃ increases below 150°K, and the resistivity shows a flat plateau centered at this temperature. Optical measurements suggest that BiCuOSe has an indirect bandgap of 0.8 eV and a strong absorption edge at 1.45 eV. Ab-initio calculations of the electronic band structure, effective masses and optical properties of BiCuOSe are also presented.     

Optical properties of indium nitride powder and films

Using photoluminescence and transmission measurements, we have studied the optical properties of indium nitride powder and thin films grown by molecular beam epitaxy. The bandgap for InN powder with electron concentration ∼ 4·10¹⁹ cm⁻³ was 0.94 eV, and for InN films with electron concentrations ∼10¹⁸ cm⁻³ it was 0.7 eV. We have established that when the electron concentration is increased to 8·10¹⁹ cm⁻³, the bandgap of InN increases to 1.0 eV. The change in the bandgap as a function of the concentration is due to the appearance of the Burstein-Moss effect. Report given at the Fifth Belorussian-Russian Seminar on Semiconductor Lasers and Systems Based on Semiconductor Lasers, June 1–5, 2005, Minsk, Belarus. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 1, pp. 86–89, January–February, 2006.     

Estimation of applicability of perturbation theory to solution of the kinetic Boltzmann equation in calculations of charge-carrier relaxation time in isotropic polycrystalline <Emphasis Type="Italic">p-</Emphasis>silicon

A condition is formulated for application of perturbation theory to solution of the kinetic Boltzmann equation in calculations of charge-carrier relaxation time in an isotropic silicon polycrystal, where holes are scattered both by a disordered system of potential barriers formed on crystallite surfaces and by a disordered lattice of silicon atoms characterized by local ordering. The total specific resistance of p-type isotropic polycrystalline silicon is estimated for the grain size d = 230 ?, temperature T = 300 K, and hole concentration p = (5.0 – 10.0) ⋅ 10¹⁹ cm⁻³. The calculated specific resistances of p-type polycrystalline silicon are compared with the experimental data.     

Experimental and computational study of the passage of an electron beam through the curvilinear element of the Drakon stellarator system in a tenuous plasma

Results are presented from the first stage of studies on the passage of an electron beam with energy 100–500 eV in a magnetic field of 300–700 Oe through the curvilinear solenoid of the KRéL unit, the latter being a prototype of the closing segment of the Drakon stellarator system, in the plasma-beam discharge regime. The ion density at the end of the curvilinear part of the chamber, n _i ≈8×10⁸–10¹⁰ cm⁻³, the electron temperature T _e ≈4–15 eV, and the positions at which the beam hits the target for different distances from it to the electron source are determined experimentally. The motion of the electron beam is computationally modeled with allowance for the space charge created by the beam and the secondary plasma. From a comparison of the experimentally measured trajectories and trajectories calculated for different values of the space charge, we have obtained an estimate for the unneutralized ion density of the order of 5×10⁷ cm⁻³. Zh. Tekh. Fiz. 69, 22–26 (February 1999)     

Phosphorus distribution profiles in 100-silicon using a spin-on source at low temperatures

 Incorporation of phosphorus into silicon from a spin-on dopant layer (SOD) at 400 ^°C is described. Annealing experiments were carried out with SOD films deposited on (100) silicon substrates by using the spin-on technique. Conventional heating on a hotplate in normal atmosphere and a temperature range up to 400 ^°C was used to study the dopant incorporation. After removing the SOD-films one part of the silicon substrates was annealed at higher temperatures. Investigations were carried out by SIMS, SAM, XPS, HTEM, stripping Hall and Van der Pauw measurements before and after the high temperature annealing. Chemical phosphorus concentration profiles obtained from low temperature annealed samples showed diffusion depths of 60–80 nm (extrapolated to a substrate doping level of 10¹⁶ cm^-3) and surface concentrations of 10¹⁹–10²⁰ cm^-3. Electron concentration profiles exhibiting maximum values around 2⋅10¹⁹ cm^-3 could be measured on high temperature annealed samples only. Received: 28 March 1996/Accepted: 19 August 1996     

Photoluminescence as a tool for the study of the electronic surface properties of gallium arsenide

Electronic surface parameters of GaAs have been determined from a qualitative and quantitative analysis of the relative photoluminescence intensity at 300 K. Characteristics of etched (100) surfaces ofn- andp-type liquid phase epitaxial GaAs have been found to be governed by negative surface charges. A density of charged surface states of about 10¹² cm⁻² and a band bending of 0.59 eV have been found forn-type material with an electron concentration of 1.1×10¹⁷ cm⁻³. Forp-type samples with hole densities ranging from 6×10¹⁵ to 4.3×10¹⁸ cm⁻³ the estimated density of negatively charged surface states was below 2×10¹¹ cm⁻², and the band bending was not more than a few kT.     

Electrical transport properties of CuWO4

The temperature dependence of the electrical conductivity, thermoelectric power and dielectric constant of the antiferromagnetic CuWO₄ have been studied in the temperature range 300–1000 K. The conductivity results can be summarised by the equations σ_I=6.31 × 10⁻³ exp (−0.29 eV/kT) ohm⁻¹ cm⁻¹ in the temperature range 300–600 K and σ_II=3.16 × 10⁵ exp (−1.48 eV/kT) ohm⁻¹ cm⁻¹ between 600 K and 1000 K. The thermoelectric power can be expressed byθ=[− 1.25 (10³/T) + 3.9] mV/K. Initially dielectric constant increases slowly but for high temperatures its increase is fast.     

SnO2 thin films grown by pulsed Nd:YAG laser deposition

SnO₂ thin films have been deposited on glass substrates by pulsed Nd:YAG laser at different oxygen pressures, and the effects of oxygen pressure on the physical properties of SnO₂ films have been investigated. The films were deposited at substrate temperature of 500°C in oxygen partial pressure between 5.0 and 125 mTorr. The thin films deposited between 5.0 to 50 mTorr showed evidence of diffraction peaks, but increasing the oxygen pressure up to 100 mTorr, three diffraction peaks (110), (101) and (211) were observed containing the SnO₂ tetragonal structure. The electrical resistivity was very sensitive to the oxygen pressure. At 100 mTorr the films showed electrical resistivity of 4×10⁻² Ω cm, free carrier density of 1.03×10¹⁹ cm⁻³, mobility of 10.26 cm² V⁻¹ s⁻¹ with average visible transmittance of ∼87%, and optical band gap of 3.6 eV.