Correlated charged impurity scattering in graphene

We study electron transport properties of graphene in the presence of correlated charged impurities via adsorption and thermal annealing of potassium atoms. For the same density of charged scattering centers, the sample mobility sensitively depends on temperature which sets the correlation length between the scatterers. The data are well-understood by a recent theory that allows us to quantitatively extract the temperature dependence of the correlation length. Impurity correlations also offer a self-consistent explanation to the puzzling sublinear carrier-density dependence of conductivity commonly observed in monolayer graphene samples on substrates.     

Spontaneous internal field around the non-magnetic impurity in spin-triplet p-wave superconductivity

The electronic structure around an impurity in spin triplet p-wave superconductors is investigated by the Bogoliubov–de Gennes theory on a tight-binding model. We calculate the spontaneous current and the local density of states around the impurity and discuss the difference between -wave and -wave superconducting states.     

Substitutional impurity in the graphene quantum dots

The process of formation of the localized defect states due to substitutional impurity in sp²-bonded graphene quantum dot is considered using a simple tight-binding-type calculation. We took into account the interaction of the quantum dot atoms surrounding the substitutional impurity from the second row of elements. To saturate the external dangling sp² orbitals of the carbon additionally 18 hydrogen atoms were introduced. The chemical formula of the quantum dot is H₁₈C₅₁X, where X is the symbol of substitutional atom. The position of the localized levels is determined relative to the host-atoms (C) ε_p energies. We focused on the effect of substitutional doping by the B, N and O on the eigenstate energies and on the total energy change of the graphene dots including for O the effect of lattice distorsion. We conclude that B, N, and O can form stable substitutional defects in graphene quantum dot.     

Theory of charged impurity scattering in two-dimensional graphene

We review the physics of charged impurities in the vicinity of graphene. The long-range nature of Coulomb impurities affects both the nature of the ground state density profile and graphene’s transport properties. We discuss the screening of a single Coulomb impurity and the ensemble averaged density profile of graphene in the presence of many randomly distributed impurities. Finally, we discuss graphene’s transport properties due to scattering off charged impurities both at low and high carrier density.     

Coulomb impurity problem of graphene in magnetic fields

Analytical solutions to the Coulomb impurity problem of graphene in the absence of a magnetic field show that when the dimensionless strength of the Coulomb potential g$g$ reaches a critical value the solutions become supercritical with imaginary eigenenergies. Application of a magnetic field is a singular perturbation, and no analytical solutions are known except at a denumerably infinite set of magnetic fields. We find solutions to this problem by numerical diagonalization of the large Hamiltonian matrices. Solutions are qualitatively different from those of zero magnetic field. All energies are discrete and no complex energies are allowed. We have computed the finite-size scaling function of the probability density containing an s$s$-wave component of the Dirac wavefunctions. This function depends on the coupling constant, regularization parameter, and the gap. In the limit of vanishing regularization parameter our findings are consistent with the expected values of the exponent ν$\nu$ which determines the asymptotic behavior of the wavefunction near r=0$r=0$.     

Analytical model of transverse oscillations of graphene

A simple analytical model of transverse oscillations of graphene is constructed. The model is applicable to both free and stretched graphene monolayers. The dispersion relation for transverse oscillations of graphene and the corresponding phonon state density are determined.     

Domain structure of graphene with Hubbard interaction under conditions of emergence of a spontaneous transverse field

It is demonstrated that, when an external static electric field is applied to graphene with Hubbard interaction between electrons, an electric field perpendicular to the applied field can spontaneously arise. The characteristics of the spontaneous field, depending on the parameters of the problem, are determined. Based on the proposed synergetic potential, the domain structure is examined.     

Low-temperature charged impurity scattering-limited conductivity in relatively high doped bilayer graphene

Based on semiclassical Boltzamnn transport theory in random phase approximation, we develop a theoretical model to investigate low-temperature carrier transport properties in relatively high doped bilayer graphene. In the presence of both electron–hole puddles and band gap induced by charged impurities, we calculate low-temperature charged impurity scattering-limited conductivity in relatively high doped bilayer graphene. Our calculated conductivity results are in excellent agreement with published experimental data in all compensated gate voltage regime of study by using potential fluctuation parameter as only one free fitting parameter, indicating that both electron–hole puddles and band gap induced by charged impurities play an important role in carrier transport. More importantly, we also find that the conductivity not only depends strongly on the total charged impurity density, but also on the top layer charged impurity density, which is different from that obtained by neglecting the opening of band gap, especially for bilayer graphene with high top layer charged impurity density.     

Breakdown in the transverse magnetic field

The breakdown between coaxial cylindrical electrodes in the homogeneous axial magnetic field in the pressure range around the Paschen minimum is studied. On the right of this minimum the breakdown voltage is not practically influenced by a weak magnetic field. On the left of this minimum the breakdown U-B curves can be divided into two branches: the upper ones can be approximated by the magnetron cut-off parabola, the lower ones correspond qualitatively in some cases to the second solution of the equation for breakdown in the inhomogeneous electric field corrected with respect to the losses of electrons caused by recapturing on the cathode.     

Spontaneous transverse EMF in inelastic scattering of quasi-two-dimensional electrons

We calculate the spontaneous transverse electric fieldE _y which arises in a quasi-two-dimensional superlattice in a strong driving electric fieldE _x when the electron energy spectrum is nonadditive. The interaction of electrons with nonpolar optic phonons is taken into account. The stability of nonzero values ofE _y is determined from examination of the minimum in the synergy potential. The temperature dependence of the critical fieldE _xc (the bifurcation point) is determined, and the voltage—current curves are determined. State Pedagogical University, Volgograd. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 99–102, July, 1997.     

Strain field due to self-interstitial impurity in Ni

The embedded-atom method have been applied to study the strain field produced by the self-interstitial impurity at the octahedral site in Ni. The calculation have been carried out consistently on the basis of discrete lattice theory, using Kanzaki method. The atomic force constants are evaluated using Wills and Harrison interatomic potential. The dynamical matrix and external force are evaluated considering the interaction up to first nearest neighbors. The atomic displacements are tabulated up to 20NN’s. These displacements are of oscillatory nature and of decreasing magnitude with NN’s distance. The physical properties such as self-interstitial formation energy and volume change calculated using atomic displacements are in accordance with the earlier studies.     

Transverse field effect in graphene ribbons

It is shown that a graphene ribbon, a ballistic strip of carbon monolayer, may serve as a quantum wire whose electronic properties can be continuously and reversibly controlled by an externally applied transverse voltage. The electron bands of armchair-edge ribbons undergo dramatic transformations: The Fermi surface fractures, Fermi velocity and effective mass change sign, and excitation gaps are reduced by the transverse field. These effects are manifest in the conductance plateaus, van Hove singularities, thermopower, and activated transport. The control over one-dimensional bands may help enhance effects of electron correlations, and be utilized in device applications.     

Effect of charged impurity correlations on transport in monolayer and bilayer graphene

We study both monolayer and bilayer graphene transport properties taking into account the presence of correlations in the spatial distribution of charged impurities. In particular we find that the experimentally observed sublinear scaling of the graphene conductivity can be naturally explained as arising from impurity correlation effects in the Coulomb disorder, with no need to assume the presence of short-range scattering centers in addition to charged impurities. We find that also in bilayer graphene, correlations among impurities induce a crossover of the scaling of the conductivity at higher carrier densities. We show that in the presence of correlation among charged impurities the conductivity depends nonlinearly on the impurity density n_i and can increase with n_i.     

Gaussian random field p-spin-interaction ising model in a transverse field

The Gaussian random field Ising model with p-spin interactions in the presence of a transverse field is studied by combining the Suzuki-Trotter approach and the thermodynamic perturbation theory. The first-order phase transitions are found in the limit p → ∞, in contrast to the cases with p=2.     

Combined effect of the perpendicular magnetic field and dilute charged impurity on the electronic phase of bilayer AA-stacked hydrogenated graphene

We address the electronic phase engineering in the impurity-infected functionalized bilayer graphene with hydrogen atoms (H-BLG) subjected to a uniform Zeeman magnetic field, employing the tight-binding model, the Green's function technique, and the Born approximation. In particular, the key point of the present work is focused on the electronic density of states (DOS) in the vicinity of the Fermi energy. By exploiting the perturbative picture, we figure out that how the interaction and/or competition between host electrons, guest electrons, and the magnetic field potential can lead to the phase transition in H-BLG. Furthermore, different configurations of hydrogenation, namely reduced table-like and reduced chair-like, are also considered when impurities are the same and/or different. A comprehensive information on the various configurations provides the semimetallic and gapless semiconducting behaviors for unfunctionalized bilayer graphene and H-BLGs, respectively. Further numerical calculations propose a semimetal-to-metal and gapless semiconductor-to-semimetal phase transition, respectively, when only turning on the magnetic field. Interestingly, the results indicate that the impurity doping alone affects the systems as well, leading to semimetal-to-metal and no phase transition in the pristine system and hydrogenated ones, respectively. However, the combined effect of charged impurity and magnetic field shows that the pristine bilayer graphene is not influenced much as the functionalized ones and phase back transitions appear. Tuning of the electronic phase of H-BLG by using both types of electronic and magnetic perturbations play a decisive role in optical responses.     

Ising model in a transverse random field

The transverse random-field Ising model with a trimodal distribution is studied within mean-field and mean-field renormalization-group approaches. The phase diagram is obtained and all the transition lines are second order. An ordered phase persists for large random fields provided that the probability of the zero transverse field is greater than the site-percolation threshold.     

Thin ferromagnetic nanodisk in transverse magnetic field

The magnetization of a ferromagnetic nanodisk is studied using micromagnetic modeling. It is demonstrated that, under an external magnetic field applied perpendicular to the disk surface, magnetic phase transitions can occur between uniform states, between uniform and vortex states, and between vortex states with different directions of polarization. A simple variation model is proposed describing the observed magnetic states quantitatively.