Indirect exciton absorption and Raman scattering in GaAs-AlGaAs superlattices

Longitudinal optic (LO) phonon assisted indirect exciton creation (X_LO), hot carrier relaxation ((e-h)_LO) and Raman scattering phenomena are reported in the optical spectra of GaAs-AlGaAs superlattices. Structures of the same dimensions both with and without double heterostructure confining barriers are studied. For the structures without confining barriers, continuum transitions are suppressed in photoluminescence excitation (PLE) spectra, and as a result the X_LO, (e-h)_LO and Raman peaks are observed. The X_LO absorption peaks are identified from the observation of a clear threshold in PLE at ℏω_LO (36.4 meV) above the heavy hole exciton peak. The intensity of X_LO is a maximum at 6 meV above the threshold, probably due to dissociation into free carriers at the exciton binding energy (6meV) above ℏω_LO. The influence of non-radiative processes on incoherent (PLE) and coherent (Raman) processes is compared.     

Resonant polaron coupling of the n = 1 Landau level and the 2p+ donor state in GaAs

The n = 0 → > n = 1 Landau level and 1s ?2p⁺ impurity transitions in GaAs were investigated up to energies above the optical phonon energy ?Ω_LO and d.c. magnetic fields up to 25 T. Pinning of both transitions to an energy slightly above and below ?Ω_LO was observed. At an energy very close to ?Ω_LO two additional impurity transitions are found. These features are attributed to the resonant polaron effect which leads to hybridization and dipole selection rule breakdown. Also the spin doublet splitting of both transitions were resolved showing a strong magnetic field dependence which can not be explained by nonparabolicity of the conduction band alone.     

Influence of the surface on the quantum P.E.M. effect in InP

The photoelectromagnetic effect of InP is studied in quantizing magnetic fields at 4·2 K in an energy range 1·4–1·5 eV for linearly polarized light. Depending on the sample surface condition two types of spectral oscillations may appear, those associated with interband transitions between Landau levels or the LO phonon type usually seen in photoconductivity. An analysis of the spectral oscillations gives: E₀ = 1·423±0·001 eV; Δ₀ = 0·102±0·006 eV; hω_L = 0·036 eV.     

Intersubband resonance polarons in Al/δ-GaAs tunneling junctions

Tunneling spectra of the A1/δ-GaAs junctions fabricated by molecular-beam epitaxy in the regime of “intimate” contact of A1 with GaAs (100) were studied at 1.6 K in a magnetic field B parallel to the two-dimensional electron-gas layer. The concentration of 2D electrons in the δ-layer grown at a distance of 20 nm from the A1/GaAs interface was 1.1 × 10¹² cm^?2 and corresponded to a partial filling of only the lowest subband E ₀. The tunneling spectra exhibited many-particle features, viz., a zero-bias anomaly, lines of longitudinal optical (LO) phonons, and characteristic “dips” corresponding to the energies E _i of the 2D subbands. In the B fields below the critical value B _c ?11 T, the levels of 2D subbands underwent the usual diamagnetic shifts. At B≥B _c , the E ₁ (B) term pinning and the anticrossing of the E ₁(B) and E ₀(B)+2?ω_LO terms were observed, where ?ω_LO is the LO-phonon energy in GaAs. The observed effects are interpreted as manifestations of resonance intersubband polarons arising in the δ-layer upon reaching the E ₁(B _c )?E ₀(B _c )=2?ω_LO resonance.     

The longitudinal magnetophonon effect in semiconductors containing magnetic impurities

The dependence of longitudinal magnetoresistance on magnetic field in semiconductors containing magnetic impurities is investigated theoretically. The calculation takes into account the scattering of electrons on magnetic impurities and on optical phonons. The inelastic optical phonon scattering itself is responsible for magnetophonon oscillations of the magnetoresistance, the extremes of these oscillations occuring when energy distance between Landau levels is equal to the energy of optical phonon, $\text{h}\text{?}$ω₀. The scattering on magnetic impurities may lead to spin flip electronic transitions. The spin flip electronic transitions manifest themselves as additional minima on the oscillatory picture of magnetoresistance. These new minima occur when the energy separation between spin-split Landau levels is equal to $\text{h}\text{?}$ω₀.     

Lattice dynamics properties of XAs (X=Al,Ga and In) with zinc-blende structure from first-principle calculations

Band structures, density of states, dielectric and vibrational properties of XAs (X=Al, Ga and In) alloys with zinc-blende structure have been studied using the density functional theory (DFT). The calculated lattice constants, band gap, static dielectric constants and phonon frequencies are all in good agreement with the available experimental data and other theoretical results. The calculated results show that Born effective charges Z_B increase with cation mass. A similar tendency has been observed for phonon frequencies ω_TO and ω_LO. Calculation results prove that static dielectric constants ε(0) increase with atomic weight, i.e. in the sequences AlAs–GaAs–InAs, and show an inverse sequence for band gap.     

Point-contact spectroscopy of electron relaxation mechanisms in semiconductors

The I–V characteristic of a tiny semiconducting channel connecting bulk electrodes is shown to have singularities arising due to phonon emission by hot electrons at energies eV = n?ω₀, where ω₀ is the optical phonon frequency and n = 1, 2, 3,…. The nonlinear part of the I–V curve provides direct information concerning the energy dependence of the elastic-scattering time of charge carriers.     

Effect of the Bloch-Siegert shift on the frequency responses of Rabi oscillations in the case of nutation resonance

The dynamics of a two-level spin system dressed by bichromatic radiation is studied under the conditions of double resonance when the frequency of one (microwave) field is equal to the Larmor frequency of the spin system and the frequency of the other (radio-frequency) field ω_rf is close to the Rabi frequency ω₁ in a microwave field. It is shown theoretically that Rabi oscillations between dressed-spin states with the frequency ? are accompanied by higher-frequency oscillations at frequencies nω_rf and nω_rf ± ?, where n = 1, 2,.... The most intense among these are the signals corresponding to n = 1. The counter-rotating (antiresonance) components of the RF field give rise to a shift of the dressed-state energy, i.e., to a frequency shift similar to the Bloch-Siegert shift. In particular, this shift is manifested as the dependence of the Rabi-oscillation frequency ? on the sign of the detuning ω₁ ? ω_rf from resonance. In the case of double resonance, the oscillation amplitude is asymmetric; i.e., the amplitude at the sum frequency ω_rf + ? increases, while the amplitude at the difference frequency ω_rf ? ? decreases. The predicted effects are confirmed by observations of the nutation signals of the electron paramagnetic resonance (EPR) of E′₁ centers in quartz and should be taken into account to realize qubits with a low Rabi frequency in solids.     

Raman scattering of Zn1−xCdxS mixed crystals

The Raman spectra of Zn_1?xCd_xS crystals are studied. The narrow peak between TO (Γ) and LO (Γ) lines at x ? 0 is due to deffect-induced first order scattering. The anomalously intense peak in the same spectral region at x ? 1 is supposed to be result of resonance interaction between LO (Γ) phonon and quasilocalized vibrations.     

Raman detection of phonon-phonon coupling in GaxIn1−xP

The coupling between the zone center phonons and continua has been observed and interpreted from the changes in the line shape of the TO Raman spectra and the existence of a side band on the low energy side of the LO phonon in mixed Ga_xIn_1?xP.     

两耦合半无限超晶格中的局域界面声子-极化激元

采用转移矩阵方法，研究了含结构缺陷层的两耦合半无限超晶格(GaAs/AlAs)中的局域界面声子-极化激元模性质. 研究发现，含不同介电特性的缺陷超晶格结构中的局域界面声子-极化激元模在剩余射线区［ω_TO, ω_LO］的分布情况与数量存在不同，而且反对称模表现出不同的特征. 文中着重研究了缺陷层介电常数与角频率无关的缺陷超晶格，发现该结构中的局域界面声子-极化激元模对组分层的排列顺序与厚度、缺陷层的厚度以及横向波数有着不同程度的依赖.     

Resonant excitation of nitrogen bound excitons in Ga As1−xPx alloys

The luminescence spectra at 18 K of nitrogen-bound exciton in Ga As_1−xP_x; x = 0.59 excited with the energy 2.540 eV show bands that lay in an energy range of about 136 meV. Luminescence spectra obtained with resonant excitation energies show sharp lines that appear on the band's energy range. They are attributed to TA^X, LA^X, 2TA^X, LO^loc, TO^Γ_p and LO^Γ_p modes. These lines have different relative-intensities. In this paper, we identify phonon peaks and we give a possible interpretation of different recombination processes.     

Phonon replica of excited level of free exciton in CdS

We report here the first experimental observation of the flourescence of a LO phonon replica from the A_n=2 excitonic level in cadmium sulfide. A very simple theoretical interpretation is given. We present also experimental data about phonon replicas in the case of forbidden transitions.     

Magnetopolaron states involving confined phonons in a semiconductor quantum well

Energy splitting ΔE _res in double magnetopolaron energy spectrum in rectangular quantum wells as functions of the well width d have been calculated. We have considered in the capacity of interaction leading to resonant coupling between electrons and phonons the interaction with confined phonons and (for comparison) with bulk LO phonons. We have obtained the conditions when the interaction with bulk phonons yields correct results. Calculations for AlAs/GaAs/AlAs and AlSb/InSb/AlSb structures have been performed. Alongside the parameter ΔE _res for a polaron, whose resonant magnetic field is determined by the condition Ω=ω _L1, where Ω is the cyclotron frequency and ω _L1 is the LO phonon frequency in the quantum well (A-polaron), we have calculated ΔE _res for D-(Ω=2ω _L1) and F-polarons (Ω=3ω _L1), which is a factor of $\sqrt 2 $ and $\sqrt 3 $ , respectively, smaller than ΔE _res for the A-polaron. Since the splitting ΔE _res for the A-polaron is very large (up to 0.2?ω _L1), it is more convenient to study in experiments D-and F-polarons since their resonant magnetic fields are lower. We have predicted existence of “weak” magnetopolarons, in which the splitting is proportional to a higher power of Frölich’s coupling constant α than α ^1/2.     

Photoconductivity and photovoltaic excitation spectra and their wavelength derivative in Cu2O

Photoconductivity and photovoltaic excitation spectra, both direct and wavelength modulated, have been performed on monocrystalline Cu₂O from 6 to 300K. At low temperatures both types of direct spectra exhibit the excitonic structures already observed by other techniques such as absorption and reflectivity. The wavelength-modulated PC spectra reveal additional structures and in particular well-defined oscillations in the green fundamental continuum, related to photocarrier LO phonon interactions. The analysis of these results shows that the 149cm^?1 (18.5 meV) LO phonon is responsible for the observed periodic structures. The values found for the energy of the collector level (2.305 ±0.001 eV) and for the effective mass ratio $\text{(}\text{m}{}_{\mathrm{h}}\text{m}{}_{\mathrm{e}}\text{bsime; 12)}$, indicate that the oscillations are produced by the electrons excited from the heavy hole valence band Γ₈⁺ to the Γ₁⁺ conduction band. A study of the position and of the contrast of the phonon oscillations as functions of temperature illustrates the behaviour of the gap displacement with changes in temperature and throws some light onto the mechanisms responsible for the existence of such oscillations.     

Exponential absorption edges in GeS

The absorption coefficient of GeS at the absorption edge behaves according to Urbach's rule. The electron-phonon interaction involves all LO phonon modes expected in the directions studied. The phonon involved in the b-axis direction has a frequency value equal to 0.034 eV while for the three LO phonons in the a-axis direction the values 0.015, 0.040 and 0.444eV were found respectively. A comparison with results for isomorphic GeSe indicates that the ionic trend obtained using the electron-phonon coupling constant σ₀ agrees with the trend which is established using ionicity values from Philip's scale.     

Strong resonant intersubband magnetopolaron effect in heavily modulation-doped GaAs/AlGaAs single quantum wells at high magnetic fields

Electron cyclotron resonance (CR) has been studied in magnetic fields up to 32 T in two heavily modulation-δ-doped GaAs/Al_0.3Ga_0.7As single quantum well samples. Little effect on electron CR is observed in either sample in the region of resonance with the GaAs LO phonons. However, above the LO-phonon frequency energy E_LO at B>27 T, electron CR exhibits a strong avoided-level-crossing splitting for both samples at energies close to E_LO+(E₂−E₁), where E₂, and E₁ are the energies of the bottoms of the second and the first subbands, respectively. The energy separation between the two branches is large, reaching a minimum of about 40 cm⁻¹ around 30.5 T for both samples. This splitting is due to a three-level resonance between the second LL of the first electron subband and the lowest LL of the second subband plus an LO phonon. The large splitting in the presence of high electron densities is due to the absence of occupation (Pauli-principle) effects in the final states and weak screening for this three-level process.     

Pressure dependence of the near-band-edge photoluminescence from ZnO microrods at low temperature

The temperature and pressure dependences of band-edge photoluminescence from ZnO microrods have been investigated. The energy separation between the free exciton (FX) and its first order phonon replica (FX-1LO) decreases at a rate of k_BT with increasing temperature. The intensity ratio of the FX-1LO to the bound exciton (BX) emission is found to decrease slightly with increasing pressure. All of the exciton emission peaks show a blue shift with increasing pressure. The pressure coefficient of the FX transition, longitudinal optical (LO) phonon energy, and binding energy of BX are estimated to be 21.4, 0.5, and 0.9 meV/GPa, respectively.     

Inter- and intra-subband relaxation of hot electrons in GaAs/AlGaAs quantum wells

In this work, we have studied the inter- and intra-subband scattering of hot electrons in quantum wells using the hot electron-neutral acceptor luminescence technique. We have observed direct evidence of the emission of confined optical phonons by hot electrons excited slightly above the n=2 subband in GaAs/Al_0.37Ga_0.63As quantum wells. Scattering rates of photoexcited electrons via inter- and intra-subband LO phonon emission were calculated based on the dielectric continuum model. We found that, for wide wells with the Al composition of our experiments, both the calculated and experimental results suggest that the scattering of the electrons is dominated by the confined LO phonon mode. In the calculations, scatterings among higher subbands are also dominated by the same type of phonon at well width of 10 nm.