Structural mechanisms of superionic conductivity in M 1−x R x F2+x single crystals

The relationship between the superionic transport in fluorite phases M _{1 ? x} R _x F_{2 + x} (M = Ca, Sr, or Ba; R are rare earth elements) and their defect structure has been analyzed. The superionic conductivity of M _{1 ? x} R _x F_{2 + x} crystals is provided by the high concentration of charge carriers. However, the carrier concentration is several tens of times lower than the concentration of anionic defects, which is explained by the presence of defect regions (DRs), which partially block carriers. The dependence of the superionic conductivity of M _{1 ? x} R _x F_{2 + x} phases on the RF₃(x) content has a percolation nature. Crystals of these phases are divided into two groups with respect to the percolation threshold: x _{p, 1} = 2–3 mol % RF₃ and x _{p, 2} = 7–8 mol % RF₃. The corresponding DR volumes are 3000–4000 ų (x _{p, 1}) and 500–700 ų (x _{p, 2}). The x _{p, 1}, and x _{p, 2} values correlate, respectively, with the octahedral cubic {M _{14 ? p} R _p F_{68 ? 69}} and tetrahedral {M _{4 ? p} R _p F₂₆} clusters, which are DR cores. The DR model and cluster structure are indicative of the heterogeneity of nonstoichiometric M _{1 ? x} R _x F_{2 + x} crystals at the nanoscale level with respect to the chemical composition and the electrical and crystallochemical (coordinations of M and R) characteristics.     

Nanostructured crystals of fluorite phases Sr1 − x R x F2 + x (R are rare earth elements) and their ordering: 5. A study of the ionic conductivity of as-grown Sr1 − x R x F2 + x crystals

Crystallography Reports - The ionic conductivity σ of Sr1 ? x R x F2 + x crystals (R = Y, La-Lu) has been measured in the temperature range of 324–933 K. The isomorphic...     

Photo-acoustic spectroscopy of SixSe1−x glasses

The optical properties near the fundamental absorption edge has been studied for a series of Si_xSe_1−x glasses using photoacoustic spectroscopy. The compositional dependence of the bandgap E_O, derived from these measurements, is presented and contrasted with the GeSe and the SiS systems. This data is qualitatively explained with a model which accounts for differing numbers of homopolar and heteropolar and heteropolar bonds as the composition is varied. Additional support for this interpretation is found in the compositional behavior of the glass transitions of these alloys.     

Nanostructured crystals of fluorite phases Sr1 − x R x F2 + x and their ordering: 9. The defect crystal and real structure of quenched fluorite phases Sr1 − x Ce x F2 + x (x = 0–0.5)

A Sr_0.7Ce_0.3F_2.3 crystal (CaF₂ type, sp. gr. $Fm\bar 3m$ ), obtained by quenching from melt, has been studied for the first time by X-ray diffraction. Fluorine vacancies and interstitial anions are found in the 8c and 32f sites, respectively. The defect ratio in the Sr_0.7Ce_0.3F_2.3 structure corresponds to the tetrahedral cluster configuration of defects {Sr_{4 ? n} Ce _n F₂₆}. The defect structure of quenched (at a rate of ～25 K/min) crystal differs from that of a crystal grown from melt (cooling at a rate of ～3 K/min) by the displacement of some cations (presumably Ce³⁺) along the threefold axis to the 32f site and the anisotropy of thermal vibrations of ions in the cluster core (F _int(32f)3). The concentration dependence of the lattice parameters of quenched Sr_{1 ? x} Ce _x F_{2 + x} phases (x = 0–0.5) is described by a third-order polynomial: a = 5.80009 + 1.166518 × 10^?3 x ? 1.124969 × 10^?5 x ² + 8.258155 × 10^?8 x ³. The compositional dependence of microdistortions is also nonlinear; maximum microdistortions are observed in the SrF₂ crystal. They decrease with an increase in the cerium concentration x to ～ 0.35. The minimum in the range x = 0.30–0.35 correlates with a composition corresponding to the peak (at x ～ 0.29) in the melting curves of the fluorite phase estimated from the phase diagram of the SrF₂-CeF₃ system (the method of thermal analysis).     

The crystallization kinetics of nanothin amorphous TlGa1 − x Ge x Se2 films

Crystallography Reports - The kinetics of phase transformations of amorphous Ge-doped TlGaSe2 films has been investigated by kinematic electron diffraction. It is shown that the crystallization of...     

Ab initio calculation of vibrational frequencies of GexSe1−x glass

We have used the density functional theory to make the models of Ge_xSe_1?x glass for which the energy is a minimum. The clusters, Ge₂Se₂, Ge₂Se₃, Ge₃Se, Ge₃Se₂, Ge₄Se, GeSe₃, GeSe₄, chain mode zig-zag Ge₄Se₃, corner sharing GeSe₄, and edge sharing Ge₂Se₆, have been made successfully and their vibrational spectra have been calculated from the first principles. We are able to optimize the bond distances as well as the bond angles. The calculated values of the frequencies of vibrations of the various clusters have been compared with those obtained from the experimental Raman spectra of actual glasses, Ge_xSe_1?x(0 < x < 0.3). The local concentration, x within 0.25 nm is nonuniform in the amorphous material. When the same cluster occurs in two stable configurations, low frequency vibrations of frequency, ν < 100 cm^?1, are found. The corner sharing GeSe₄ has low frequency modes at 54 cm^?1 and 93 cm^?1 whereas these modes disappear in the pyramidal configuration. The low frequency modes are therefore associated with the breaking of C₄ symmetry of the pyramidal configuration. The computed vibrational frequencies of clusters Ge₃, Ge₄Se₃, Ge₂Se₃, GeSe₃ and Ge₃Se₂ are actually present in the Raman spectra of the glass, Ge_xSe_1?x(0 < x < 0.3).     

Crystal structure of α‴-(Zn1−x Cd x )3As2 (x = 0.26)

Single crystals of the α?-phase of (Zn_{1 ? x} Cd _x )₃As₂ solid solution (x = 0.26) have been prepared and investigated by X-ray diffraction analysis. The tetragonal unit-cell parameters are found to be a = b = 8.5377(2) Å, c = 24.0666(9) Å, sp. gr. I4₁/amd, Z = 16. Zn and Cd atoms in the crystal statistically occupy three symmetrically independent positions in the mirror planes and are tetrahedrally coordinated by arsenic atoms. (Zn,Cd) tetrahedra share edges to form a three-dimensional structure framework. The α?-phase is geometrically related to the fluorite structure. The character of arrangement of tetrahedral vacancies in fluorite-like unit cells is revealed. Chains of tetrahedral vacancies form microchannels oriented parallel the a and b axes, which pierce the three-dimensional structure framework at different levels along the c axis. The structure of α″-Cd₃As₂ crystals is found to be similar to that of α?-(Zn_0.74Cd_0.26)₃As₂.     

Concentration dependences of the unit-cell parameters of nonstoichiometric fluorite-type Na0.5 − x R 0.5 + x F2 + 2x phases (R = rare-earth elements)

Unit-cell parameter a of the cubic phases with a varying composition Na_{0.5 ? x} R _{0.5 + x} F_{2 + 2x} (R = Gd-Lu and Y) and with a fluorite-type structure, is described within an accuracy of ±0.003 Å, by the formula a = 4.454 + 0.874r ₃ + x(6.7238r ₃ ? 7.259) where r ₃ is the Shannon “crystal ionic radius” R ³⁺ at c.n. = 8.     

Growth and structure of photosensitive Pb1−x Mn x Te(Ga) epitaxial films

The growth and structure of (1-1.5)-μm-thick Pb_1?x Mn _x Te(Ga)(x = 0.06) films with 0.4?0.9 at % of gallium, grown on BaF₂(111) and Pb_1?x Sn _x Te (x = 0.2) (100) substrates by molecular beam epitaxy, have been investigated. It is established that the films are crystallized into an fcc structure, and their growth planes are (111) and (100), according to the substrate orientation. The optimal conditions for obtaining high-resistivity photosensitive p-and n-type films with a perfect crystal structure (W _1/2 = 80″?100″) have been determined.     

Growth of Ga x In1 − x Sb solid solution single crystals by the Czochralski method

Crystallography Reports - Ga x In1 ? x Sb solid solution single crystals (x = 0.03–0.09) have been grown. The dislocation density and electrophysical parameters are measured. A...     

Synthesis and Structure Refinement of Polycrystalline Solid Solution: Na1 + x Zr2 − x Sb x P3O12 (x = 0.1)

Abstract  The solid solution of Na_1 + x Zr_2 − x Sb _x P₃O₁₂ (x = 0.1) was prepared at 1,000 °C by ceramic route. The ceramic material belonging to sodium zirconium phosphate (hereafter NZP) family crystallizes in space group R-3c with unit cell parameters: a = b = 8.77283(16) ?, c = 22.8375(7) ?, α = β = 90.0° γ = 120.0° and Z = 6. The structure of the title phase has been determined by Rietveld refinement of the powder diffraction data on GSAS software. The refinement converges to a satisfactory structure fit with R _p = 0.0764, R _wp = 0.1099 and RF ² = 0.0450. The interatomic distances and bond angles are in good agreement with their standard values. The particle size along prominent reflecting planes ranges between 13 and 50 nm. The polyhedral (ZrO₆ and PO₄ and NaO₈) distortions and valence calculations from bond strength data are also reported. The investigations show that the Sb⁺³ cation occupies the zirconium (A^VI) site of NZP structural framework and resultant charge compensation takes place through partial occupation of M₂ site by Na⁺ ions. Index Abstract  Synthesis and Structure Refinement of Polycrystalline Solid Solution: Na_1 + x Zr _2 −  x Sb _x P ₃ O ₁₂ ( x  = 0.1) O. P. Shrivastava and Rashmi Chourasia Antimony enters crystallochemically in the framework of nano ceramic sodium zirconium phosphate at the Zr site of the ZrO₆ octahedra which are inter linked by PO₄ tetrahedra through corner sharing of the vertical columns. Electronic supplementary material  The online version of this article (doi:) contains supplementary material, which is available to authorized users.     

Thermal conductivity of single crystals of Ba1–x R x F2 + x (R = La,Ce, Nd,or Gd) solid solutions

The thermal conductivity of single crystals of Ba_1–х R _х F_{2 + х} (R = La, Ce, Nd, or Gd) solid solutions has been experimentally investigated in the temperature range of 50–300 K. With an increase in the content of rare-earth elements, the thermal-conductivity behavior in these series changes from that characteristic of defect single crystals to the behavior typical of glasslike materials. The thermal-conductivity concentration dependences are almost identical, which can be explained by the same type of defect clusters arising upon heterovalent ion substitution.

     

Nanostructured crystals of fluorite phases Sr1−x R x F2+x and their ordering: VIII. Imperfect crystal structure of Sr0.71Ce0.29F2.29

A congruently melting single crystal of nonstoichiometric phase Sr_0.71Ce_0.29F_2.29 crystallizing into the CaF₂ structural type (sp. gr Fm $\bar 3$ m) has been studied by X-ray diffraction analysis. Vacancies in the main fluorine position 8c and interstitial anions in two 32f positions have been found. The ratio of the structural defects in the Sr_0.71Ce_0.29F_2.29 solid solution corresponds to the tetrahedral configuration of the defect cluster {Sr_{4 ? n} Ce _n F₂₆}.     

Growth of faces of K2Co x Ni1 – x(SO4)2 · 6H2O mixed crystals

Data on the morphology and normal growth rate of the (110) and (001) faces, velocities of step motion, and slopes of dislocation hillocks on the (001) face of K₂Co _x Ni₁– _x (SO₄)₂ · 6H₂O crystals at different supersaturations of solutions with a Co/Ni ratio equal to 1: 1 or 1: 2 have been obtained using a Michelson interferometer. The morphology of the (110) faces is found to be the same for solutions of both compositions. Powerful dislocation sources with large Burgers vectors dominate on the (001) face. The morphology of the (001) surface is rougher than that of (110), especially in a 1: 2 solution at high supersaturation. The (110) faces grow more slowly as compared with (001). The kinetic coefficients of steps on the (001) face are identical in the 1: 1 and 1: 2 solutions. The influence of the kinetic and morphological characteristics of (001) faces on the single-crystal quality is analyzed.

     

Local lattice strains in the system of cubic Zn0.999Fe0.001S x Se1 − x (0 ≤ x ≤ 1) crystals

The structure of cubic Zn_0.999Fe_0.001S _x Se_{1 ? x} (0 ≤ x ≤ 1) crystals obtained by vapor-phase chemical transport has been investigated by thermal-neutron diffraction. The diffraction patterns of these crystals are found to exhibit previously unknown diffuse-scattering effects related to local static atomic displacements in the metastable fcc lattice. It is substantiated that the tendency to form polytypes, which is characteristic to a greater extent of zinc sulfide, can be a key factor of instability in the lattice of compounds belonging to the series of anion-substituted solid solutions under study.     

Magnetic, magnetocaloric, and lattice properties of the La(Fe x Si1 − x )13 ferromagnets

The magnetic and lattice properties of a sample of La(Fe_0.86Si_0.14)₁₃ ferromagnet have been measured. The influence that neutron irradiation has on the physical properties of this ferromagnet is studied. It is shown that the irradiation of this sample by a fluence of 3 × 10¹⁹ n/cm² increases the lattice constant a and the Curie temperature (T _C ) as the volume magnetostriction decreases. A model of ferromagnet is proposed which satisfactorily describes the dependence a(T) of the initial and irradiated samples and their magnetic properties. The temperature dependence of the change in entropy when switching the magnetic field on and off is calculated. It is established that the change in both the magnetic and lattice parts of the total entropy at the magnetic phase transition must be taken into account for La(Fe _x Si_{1 ? x} )₁₃ compounds.     

Investigation of the structure and properties of (K x (NH4)1 − x )3H(SO4)2 single crystals

The influence of isomorphous replacement in the cation sublattice on the kinetics of the phase transition in single crystals of the solid solutions (K _x (NH₄)_{1 ? x} ) _m H _n (SO₄)_{(m + n)/2} · yH₂O belonging to the K₃H(SO₄)₂-(NH₄)₃H(SO₄)₂-H₂O salt system was studied. Superproton phase transitions for the end compositions of this system have been found earlier. The optical and thermal properties of crystals with the composition (K,NH₄)₃H(SO₄)₂ in the temperature range from 295 to 500 K were investigated, and the crystal structure was determined at 295 K. The results of the study and the comparison with the literature data show that the replacement of potassium atoms with ammonia leads to a fundamental change in the kinetics of the phase transition, the phase-transition temperature remaining virtually unchanged.     

Dependence of the surface topology and raman scattering spectra of Ge x Si1−x /Si films on the composition variation over the layer thickness

The surface topology and Raman scattering spectra of Ge _x Si_{1 ? x} /Si(100) films are investigated in dependence of the composition variation over the film thickness. It is shown that the character of the Ge content variation in the Ge _x Si_{1 ? x} alloy at the constant cumulative Ge fraction in the film (x _int = 0.5) affects the surface morphology of the grown Ge _x Si_{1 ? x} /Si layer. The heterostructures were grown by molecular-beam epitaxy.     

Structure of the interfaces of the InxGa1 − x As quantum well from X-ray diffraction data

The structure of the interfaces of a 10-nm-thick In_xGa_{1 ? x} As quantum well buried in the semiconductor GaAs matrix has been studied by the method of double-crystal X-ray diffractometry. It has been shown that, in comparison with the well-known photoluminescence method, the X-ray diffraction method has considerable advantages in characterization of multilayer systems. The detailed analysis of the rocking curves provided the reconstruction of the profiles of indium distributions in quantum wells for specimens with different indium concentrations.