铁电薄膜底电极对薄膜结构与电性能的影响

研究了电极材料（Ｐｔ／Ｔｉ）对铁电ＰＬＺＴ（７．５／６５／３５）陶瓷薄膜结构和性能的影响．认为在Ｐｔ层厚度一定时，Ｔｉ层的厚度对铁电薄膜的结构和性能有显著影响．当Ｔｉ层过厚或过薄时，铁电薄膜的结构较差；而当Ｔｉ层的厚度适中时，则铁电薄膜的显向下微结构均匀，电性能较好，典型的剩余极化强度和矫顽场分别为２７．８μＣ·ｃｍ^-2和６５．１ｋＶ·ｃｍ^-1． 关键词：     

电感耦合等离子体CVD低温生长硅薄膜过程中的铝诱导晶化

利用电感耦合等离子体CVD方法在350℃的低温下在镀Al玻璃衬底上制备出具有良好结晶性的Si薄膜.利用x射线衍射、紫外-可见分光椭圆偏振谱、原子力显微镜及x射线光电子谱等研究了薄膜的结构、表面形貌和成分分布等.结果表明，用这种方法制备的Si薄膜不但晶化程度高，而且具有良好的（111）结晶取向性，晶粒尺寸大于300nm，样品中无Al的残留.结合电感耦合等离子体的高电子密度特征讨论了低温生长过程中Al诱导Si薄膜晶化的机理. 关键词： 电感耦合等离子体CVD Al诱导晶化 Si薄膜 低温生长     

Capacitor structures based on strontium titanate films

The structural properties of strontium titanate films and the electrical parameters of the related capacitor structures have been investigated. It has been found that the deposition temperature exerts a direct effect on the phase composition of the films, the degree of perfection of the crystal structure, and the internal stresses in the lattice. The strontium titanate films deposited at a temperature of 800°C are single-phase, have a rather perfect crystal structure, and possess minimum internal stresses. It has been shown that the capacitor structures based on oriented strontium titanate films provide a twofold decrease in the level of dielectric loss as compared to similar structures based on barium strontium titanate solid solution films at a frequency of 1.5 GHz.     

RF溅射的SiO_2和SiO_2/Al/SiO_2薄膜的喇曼散射光谱研究

用射频溅射(RF Sputtering)法制成了SiO_2和SiO_2/Al/SiO_2薄膜。应用喇曼光谱研究了薄膜结构。结果表明:RF溅射制成的SiO_2薄膜是含有大量环结构缺陷的玻璃态;SiO_2/Al/SiO_2层状薄膜的喇曼光谱中观察到Al_2O_3的特征峰,证实了Al/SiO_2薄膜界面确有氧化还原反应发生;从喇曼光谱中Al_2O_3的特性峰的位置和相对强度可推断出,SiO_2/Al/SiO_2薄膜界面处的Al_2O_3是非晶γ-Al_2O_3。     

Ab initio study of the structure of oriented films of linearly chain carbon

Ab initio study of oriented carbon films consisting of bent carbon chains closely packed into a hexagonal cell has been reported. A new structural model of films has been presented. It has been shown that hydrogen impurity is necessary for the stabilization of their structure. Interatomic distances in the film both between chains and along them, as well as the bending angle of carbon chains, have been determined. It has been shown that carbon atoms in the chains have a polyene bond. The distances between chains (5.0 Å) theoretically determined in this work are in excellent agreement with the previously reported experimental data. The analysis of the electronic density of states shows that these films have the dielectric properties with a band gap of about 0.43 eV. The distribution of the charge density along the chains in the film has been studied, which makes it possible to propose a model of the structural instability of such films.     

Porous structure, permeability, and mechanical properties of polyolefin microporous films

Microporous films of polyolefins, namely, polyethylene and polypropylene, have been prepared using the process based on the extrusion of the melt with the subsequent annealing, uniaxial extension, and thermal fixation. The influence of the conditions used for preparation of the films on their morphology, porosity, number and sizes of through-flow channels, and mechanical properties has been investigated. It has been found that a significant influence on the characteristics of the porous structure of the films is exerted by the degree of orientation of the melt at extrusion, the annealing temperature, and the degree of uniaxial extension of the films. The threshold values of these parameters, at which through-flow channels are formed in the films, have been determined. It has been shown using filtration porosimetry that polyethylene films have a higher permeability to liquids as compared to the polypropylene samples (240 and 180 L/(m² h atm), respectively). The porous structure of the polyethylene films is characterized by larger sizes of through pores than those of the polypropylene samples (the average pore sizes are 210 and 160 nm, respectively), whereas the polypropylene films contain a larger number of through-flow channels.     

Nucleation effects during MBE growth of Sn-Doped GaAs

The morphology, structure and composition of Sn films on GaAs substrates have been investigated in relation to the predeposition technique used with Sn doping of MBE-grown GaAs films. It has been shown that 3-D aggregates of Sn are formed and a similar morphology has been identified in the Sn which accumulates at the surface of all Sn-doped GaAs films. The way in which this relates to donor incorporation is considered and a simple model of incorporation kinetics proposed which is shown to be consistent with observation.     

Structure of Ultrathin Polycrystalline Iron Films Grown on SiO<Subscript>2</Subscript>/Si(001)

The structure of polycrystalline Fe films grown on an oxidized Si(001) surface at room temperature has been studied by the technique of high-energy electron diffraction. It has been found that the grain orientation in the films depends of the amount of deposited iron. In Fe films less than 5 nm thick, grains have been found to be randomly oriented. Fe films more than 5 nm in thickness exhibit the (111) texture with an axis coinciding with the surface normal. The angular dispersion of the [111] direction in the Fe lattice from the surface normal is ±25°. It has been found that as the Fe films become thicker, the (111) texture changes to the (110) texture.     

Supramolecular structure of electroactive polymer thin films

This paper presents the results of an experimental investigation of the supramolecular structure of polydiphenylenephthalide thin films that exhibit effects of resistive switching. The supramolecular structure of the polymer has been investigated using small-angle neutron scattering in conjunction with atomic force microscopy. It has been found that the internal structure of polymer films consists of structural elements in the form of spheroids. The sizes of the structural elements, which were obtained from the neutron scattering data and analysis of the atomic force microscopy images, correlate well with each other. A model of the formation of polymer layers has been proposed. The observed structural elements in polymer films are formed due to the association of macromolecules in the initial polymer solution.     

Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crystal lattice: A review

A review of recent advances in the field of epitaxial growth of SiC films on Si by means of a new method of epitaxial substitution of film atoms for substrate atoms has been presented. The basic statements of the theory of the new method used for synthesizing SiC on Si have been considered and extensive experimental data have been reported. The elastic energy relaxation mechanism implemented during the growth of epitaxial SiC films on Si by means of the new method of substitution of atoms has been described. This method consists in substituting a part of carbon atoms for silicon matrix atoms with the formation of silicon carbide molecules. It has been found experimentally that the substitution for matrix atoms occurs gradually without destroying the crystalline structure of the matrix. The orientation of the film is determined by the “old” crystalline structure of the initial silicon matrix rather than by the silicon substrate surface only, as is the case where conventional methods are used for growing the films. The new growth method has been compared with the classical mechanisms of thin film growth. The structure and composition of the grown SiC layers have been described in detail. A new mechanism of first-order phase transformations in solids with a chemical reaction through an intermediate state promoting the formation of a new-phase nuclei has been discussed. The mechanism providing the occurrence of a wide class of heterogeneous chemical reactions between the gas phase and a solid has been elucidated using the example of the chemical interaction of the CO gas with the single-crystal Si matrix. It has been shown that this mechanism makes it possible to grow a new type of templates, i.e., substrates with buffer transition layers for growing wide-band-gap semiconductor films on silicon. A number of heteroepitaxial films of wide-band-gap semiconductors, such as SiC, AlN, GaN, and AlGaN on silicon, whose quality is sufficient for the fabrication of a wide class of micro- and optoelectronic devices, have been grown on the SiC/Si substrate grown by solid-phase epitaxy.     

Synthesis and magnetic states of cobalt in three-layer Co/Ge/Co films

The magnetic properties of three-layer Co-Ge magnetic films have been studied experimentally as a function of technological conditions of their deposition. It has been found that the films deposited at a high deposition rate have a granular structure, and the films obtained at a low deposition rate have an X-ray amorphous structure. Electron microscopy and nuclear magnetic resonance studies have demonstrated that, at the same cobalt layer thickness, the semiconductor granule sizes depend on the average semiconductor layer thickness and correlate with the formation of different cobalt phases (amorphous, cubic, and hexagonal). The thermomagnetic properties of the films have been investigated.     

Influence of the Sign of Solvatochromism of Merocyanines on their Photoelectric Properties in Polymer Films

It has been established that the intensities of the longwave, electron-absorption bands of merocyanine dyes differing in the sign of solvatochromism redistribute under the action of an external electric field. This is explained by the fact that the probability of vibronic transitions changes under the action of an electric field. It has been revealed that the photoconductivity of poly-N-epoxypropylcarbazole films doped with merocyanines increases with decrease in negative solvatochromism and increase in positive solvatochromism. It is suggested that the more bipolar structure of the excited state of the above-mentioned films in the first case as compared to the structure of these films in the second case is favorable for electron transfer from the poly-N-epoxypropylcarbazole molecules to the dye molecule and the formation of a carbazole cation-radical providing hole conduction in the polymer.     

Influence of annealing at temperatures above the solidus temperature on the structure and galvanomagnetic properties of Bi<Subscript>92</Subscript>Sb<Subscript>8</Subscript> solid-solution thin films

The influence of the annealing temperature from the interval between the solidus and liquidus temperatures of Bi₉₂Sb₈ solid solution on its structure and galvanomagnetic and thermoelectric properties has been studied. It has been shown that films of bismuth–antimony solid solution grown by thermal evaporation in a vacuum will have a large-grained structure after annealing at temperatures higher than the solidus temperature of the solid solution. It has been found that these films offer the lowest resistivity, the highest relative magnetoresistance, and the highest mobility of charge carriers. As the annealing temperature approaches the liquidus temperature, the probability that a dendritic structure will form and antimony-enriched regions will appear grows. This causes an increase in the charge carrier concentration and a decrease in the resistivity with a decrease in the relative magnetoresistance and charge carrier mobility.     

Atomic force microscopy of the supramolecular organization and strength properties of ultrathin polysiloxane block copolymer films

Ultrathin films of polysiloxane block copolymers and their composites with modifying additives of the C₆₀ fullerene have been studied using atomic force microscopy. It has been revealed that, independently of the concentration of the additives, the surface relief of the films has an ordered structure with a period of approximately 35 nm, which is associated with the presence of a spatial network of rigid block domains of ladder phenylsilasesquioxane in the block copolymer. The mechanical properties of the films have been determined from indentation tests of their surface layers. Reliable quantitative measurements have been performed with specially fabricated spherical indenters of the calibrated submicron radius of curvature. The obtained values of the strength parameters correlate with the data derived from standard physical and mechanical tests of thick films. It has been found that the addition of the C₆₀ fullerene at a level of 0.01% significantly improves the elasticity of the surface layers of the block copolymer.     

Study of the fields scattered by a periodic strip structure of thin magnetic films

Components of the fields scattered by a periodic planar strip structure of thin magnetic films possessing a uniaxial magnetic anisotropy in the plane have been calculated using the phenomenological model. Regularities in the dependence of these fields on the design parameters of the structure have been studied. The results obtained agree with the numerical analysis of the micromagnetic model of this structure. It has been shown that, near the edges of strips magnetized orthogonally to the major axis, the components of the scattered field can exceed the external magnetizing field by a few orders of magnitude. This fact makes it possible to design highly efficient magnetoresistive elements on the basis of a strip structure of magnetic films and thin semiconductor films.     

Domain walls, magnetization, and magnetoelectric effect in bismuth ferrite films

The specific features of the antiferromagnetic domain structure, magnetization, and polarization induced by an inhomogeneous micromagnetic distribution in films of bismuth ferrite multiferroics have been investigated. It has been shown that the magnetic domain structure correlates with the ferroelectric domain structure, and the character of the rotation of the antiferromagnetic vector depends on the type of ferroelectric domain walls. An asymmetry in the distribution of the antiferromagnetic vector has been observed for the cases of 109° and 71° ferroelectric domain walls. It has been demonstrated that there are differences in the distributions of the polarization and magnetization in bismuth ferrite films with ferroelectric domains separated by 109° and 71° walls. The basic mechanisms responsible for the magnetization in domain walls in multiferroics have been considered.     

Change in surface states of Ag(111) thin films upon adsorption of a monolayer of PTCDA organic molecules

The change in the electronic structure of silver thin films of different thicknesses with the Ag( 111) orientation due to the interaction with an adsorbed monolayer of ordered organic molecules of 3,4,9,10-perylene-tetracarboxylic acid dianhydride (PTCDA) has been investigated in terms of density functional theory. It has been shown that one of the two surface states of the pure films transforms into an unocc upied interface state due to the interaction so that all the main features of the initial state are retained. The relation of the resulting state to the unoccupied state experimentally observed in the PTCDA/Ag( 111 ) system by scanning tunneling and two-photon photoemi ssion spectroscopy has been discussed.     

Doping of ZrO2 by ion mixing

The morphology and structure of ZrO₂ films grown in steam-water medium on an ion-doped surface of zirconium and its E110 and E635 alloys have been studied. It has been found that the properties of oxide films are determined mostly by the conditions of ion-implantation doping at large oxidation times. It has been shown by the example of samples doped simultaneously with Al, Fe, Mo, and Y that the formation of a multiphase oxide film occurs due to the diffusion redistribution of implanted atoms during oxidation.     

Effect of Co layer thickness on structural and magnetic properties of C/Co/C films

Granular C/Co/C films have been prepared by magnetron sputtering from C and Co onto glass substrates at room temperature and subsequent in situ annealing. It has been found that the structure and magnetic properties of the C/Co/C films depend strongly on the Co layer thickness. Vibrating sample magnetometer measurements indicate that the in-plane coercivities reach maximum in 20 nm Co thickness of both as-deposited and annealed films. The squareness ratio of annealed films was more than 0.8. X-ray diffraction shows that majority Co nanograins are formed as the hexagonal-close-packed (HCP) structure in 20 nm Co thickness with annealing at 400 °C. Scanning probe microscope was used to scan surface morphology and magnetic domain structures. The values of the surface roughness were lower than 0.6 nm in all annealed samples. The average magnetic cluster size was estimated to be about 10 nm in annealed 20 nm Co thickness films.     

Study of the effect of the oxygen partial pressure on the properties of rf reactive magnetron sputtered tin-doped indium oxide films

The influence of the oxygen partial pressure on the properties of indium tin oxide films deposited by rf reactive magnetron sputtering has been studied. The oxygen partial pressure was varied from 3.2 × 10⁻⁴ to 1.0 × 10⁻³ mbar. It has been found that the 4 × 10⁻⁴ mbar of oxygen partial pressure is a critical point. When the oxygen partial pressure is lower than 4 × 10⁻⁴ mbar, the deposition rate of the films is high; the films have low transmittance and electrical resistivity; the X-ray diffraction shows that the films have a random orientation and the images of the scanning electron microscopy show that the films surface are smooth without structure. When the pressure is higher than 4 × 10⁻⁴ mbar, the deposition rate is low and does not change as the oxygen partial pressure is further increased; the transmittance and the electrical resistivity are both high; the films show the preferred orientation along the (440) direction; the films surface show a clear structure and as the pressure is increased further, the films become porous. Considering both the factor of transmittance and resistivity, the optimum oxygen partial pressure will be 3.6 × 10⁻⁴ mbar. The films prepared at this pressure have 80% transmittance and 9 × 10⁻⁴ Ω cm resistivity.