On the fermi velocity and static conductivity of epitaxial graphene

The models of the energy density of states of a metallic or semiconductor substrate, which does not further lead to divergences, have been proposed to calculate the characteristics of epitaxial graphene. The Fermi velocity of epitaxial graphene formed on a metal has been shown to be greater than that in free-standing graphene irrespective of the position of the Fermi level. On the contrary, the Fermi velocity of graphene formed on a semiconductor is lower so that the lower is the Fermi velocity, the closer is the Fermi level to the center of the band gap of the semiconductor. The zero-temperature static conductivity σ of epitaxial graphene has been calculated according to the Kubo-Greenwood formula. The quantity σ_m of undoped graphene on metal has been shown to decrease with an increase in the deviation of the Dirac point ?_D (which coincides with the Fermi level of the system) from the center of the conduction band of the substrate. In the case of the semiconductor substrate, the static conductivity σ_sc turns out to be nonzero and amounts to σ_sc = 2e ²/π?-only under the condition ?_F =?′_D, where ?′_D is the Dirac-point energy renormalized by the interaction with the substrate.     

Transport characteristics of a single-layer graphene field-effect transistor grown on 4H-silicon carbide

We have investigated transport characteristics of epitaxial graphene grown on semi-insulating silicon-face 4H-silicon carbide (SiC) substrate by thermal decomposition method in relatively high N₂ pressure atmosphere. We have succeeded in forming 1–2 layers of graphene on SiC in controlled manner. The surface morphology of formed graphene was analyzed by atomic force microscopy (AFM), low-energy electron diffraction (LEED) and low-energy electron microscope (LEEM). We have confirmed single-layer graphene growth in average by this method. Top-gated, single-layer graphene field-effect transistors (FETs) were fabricated on epitaxial graphene grown on 4H-SiC. Increased on/off ratio of nearly 100 at low temperature and extremely small minimum conductance (0.018–0.3 in 4 e²/h) in gated Hall-bar samples suggest possible band-gap opening of single-layer epitaxial graphene grown on Si-face SiC.     

Transport properties of high-quality epitaxial graphene on 6H-SiC(0001)

We have extensively studied the electronic properties of epitaxial graphene grown on the Si face of a 6H silicon carbide substrate by thermal decomposition in an argon atmosphere. Using e-beam lithography, large van der Pauw structures as well as Hall bars were patterned. Their size ranged from millimeters down to submicrometer-sized Hall bars, the latter entirely placed on atomically flat substrate terraces. We found reproducible electronic properties, independent of the sample size and orientation, over a broad temperature range. A comparison of the mobility values indicated no enhanced scattering at the macroscopic step edges of the SiC substrate and due to adsorbed molecules. However, the strong coupling to the substrate results in an elevated charge carrier density n and a reduced mobility μ compared to exfoliated graphene. If n is decreased the mobility rises substantially (up to 29 000 cm²/V s at 25 K), and Shubnikov-de Haas oscillations and the graphene-like quantum Hall effect become visible. This leads to the conclusion that the electrons in epitaxial graphene have the same quasi-relativistic properties previously shown in exfoliated graphene and expected from theory.     

To the theory of adsorption on epitaxial graphene: Model approach

A model of adsorption on epitaxial graphene has been constructed in two stages: first, the density of states of a graphene monolayer adsorbed on a solid substrate has been found and then an adsorbed atom has been placed on the epitaxial graphene thus formed. Metallic and semiconductor substrates have been considered. Charge transfer between the adatom and epitaxial graphene has been calculated. The roles of the substrate and graphene layer in the formation of the electronic state of adatoms have been estimated.     

Si面4H-SiC衬底上外延石墨烯近平衡态制备

SiC热解法是制备大面积、高质量石墨烯的理想选择之一.外延石墨烯的晶体质量仍是制约其应用的关键因素之一.本文通过SiC热解法在4H-SiC(0001)衬底上制备单层外延石墨烯.通过引入氩气惰性气氛和硅蒸气,使SiC衬底表面的Si原子升华与返回概率接近平衡,外延石墨烯生长速率大大减慢,单层石墨烯的生长时间从15 min延长至75 min.测试分析表明,生长速率减慢,外延石墨烯中缺陷减少,晶体质量提高,使得外延石墨烯的电性能都得到改善,单层外延石墨烯的最高载流子迁移率达到1200 cm2/V·s,方阻604?/.以上结果表明,控制生长气氛,减慢生长速率是实现高质量外延石墨烯的可行途径之一.     

Highly-doped p-type few-layer graphene on UID off-axis homoepitaxial 4H–SiC

In this report we investigate structural and electrical properties of epitaxial Chemical Vapor Deposition quasi-free-standing graphene on an unintentionally-doped homoepitaxial layer grown on a conducting 4H–SiC substrate 4° off-axis from the basal [0001] direction towards [11-20]. Due to high density of SiC vicinal surfaces the deposited graphene is densely stepped and gains unique characteristics. Its morphology is studied with atomic force and scanning electron microscopy. Its few-layer character and p-type conductance are deduced from a Raman map and its layers structure determined from a high-resolution X-ray diffraction pattern. Transport properties of the graphene are estimated through Hall effect measurements between 100 and 350 K. The results reveal an unusually low sheet resistance below 100 Ω/sq and high hole concentration of the order of 10¹⁵ cm⁻². We find that the material's electrical properties resemble those of an epitaxially-grown SiC PIN diode, making it an attractive platform for the semiconductor devices technology.     

The transport properties of Dirac fermions in chemical vapour-deposited single-layer graphene

Abstract

The electronic transport properties of Dirac fermions in chemical vapour-deposited single-layer epitaxial graphene on anSiO₂/Si substrate have been investigated using the Shubnikov–de Haas (SdH) oscillations technique. The magnetoresistance measurements were performed in the temperature range between 1.8 and 43 K and at magnetic fields up to 11 T. The 2D carrier density and the Fermi energy have been determined from the period of the SdH oscillations. In addition, the in-plane effective mass as well as the quantum lifetime of 2D carriers have been calculated from the temperature and magnetic field dependences of the SdH oscillation amplitude. The sheet carrier density (1.42 × 10¹³ cm^?2 at 1.8 K), obtained from the low-field Hall Effect measurements, is larger than that of 2D carrier density (8.13 × 10¹² cm^?2). On the other hand, the magnetoresistance includes strong magnetic field dependent positive, non-oscillatory background magnetoresistance. The strong magnetic field dependence of the magnetoresistance and the differences between sheet carrier and 2D carrier density can be attributed to the 3D carriers between the graphene sheet and the SiO₂/Si substrate.     

To the theory of electronic states of epitaxial graphene formed on the surface of a metal substrate

The problem of electronic states of epitaxial graphene formed on the surface of a metal substrate has been considered. The electronic states of epitaxial graphene have been studied taking into account the indirect interaction of its atoms through the electron gas of the substrate.     

Raman analysis of epitaxial graphene grown on 4Hben SiC (0001) substrate under low pressure condition

In this paper, we report a feasible route of growing epitaxial graphene on 4H-SiC (0001) substrate in a low pressure of 4 mbar (1 bar=10⁵ Pa) with an argon flux of 2 standard liters per minute at 1200, 1300, 1400, and 1500 ℃ in a commercial chemical vapour deposition SiC reactor. Using Raman spectroscopy and scanning electron microscopy, we confirm that epitaxial graphene evidently forms on SiC surface above 1300 ℃ with a size of several microns. By fitting the 2D band of Raman data with two-Lorentzian function, and comparing with the published reports, we conclude that epitaxial graphene grown at 1300 ℃ is four-layer graphene.     

Adsorption on graphene with vacancy-type defects: A model approach

The influence of graphene lattice defects on the adsorption properties of graphene has been considered. The adsorption properties have been investigated in the framework of the Anderson model. The disorder of the graphene crystal lattice has been analyzed using the T-matrix approximation. It has been found that the characteristic energy levels of defects are located near the Dirac point (±1 eV), because the most significant distortions of the spectrum due to the presence of defects in the graphene crystal lattice are observed in the vicinity of this point. Analytical expressions for the density of states of disordered graphene and atoms adsorbed on it have been obtained. A numerical calculation of the charge transfer in the considered system has been carried out. The obtained values of the charge transfer are in good agreement with the results of other studies, where the charge transfer was calculated using the experimental data and the density functional theory method. In the absence of defects, the presented results are well consistent with the results obtained within the M-model of adsorption (Davydov model). An approximation for the density of states of disordered graphene and the shift function of an adsorbed atom has been proposed. This approximation allows one to obtain analytical expressions for the charge transfer, energy of adsorption, and dipole moment.     

Formation,structure, and properties of “welded” <Emphasis Type="Italic">h</Emphasis>-BN/graphene compounds

Structures of h-BN/graphene with holes where atoms at the edges are bonded to each other by sp² hybridized C–B and C–N bonds and form continuous junctions from layer to layer with topological defects inside holes have been considered. Their formation, as well as the moiré-type stable atomic structure of such compounds (with different rotation angles of graphene with respect to the hexagonal boron nitride monolayer) with closed hexagonal holes in the AA centers of packing of the moiré superlattice, has been studied. The stability, as well as the electronic and mechanical properties, of such bilayer BN/graphene nanomeshes has been analyzed within electron density functional theory. It has been shown that they have semiconducting properties. Their electronic band structures and mechanical characteristics differ from the respective properties of separate monolayer nanomeshes with the same geometry and arrangement of holes.     

Influence of the laser wavelength on the epitaxial growth and electrical properties of La0.8Sr0.2MnO3 films grown by excimer laser-assisted MOD

Epitaxial La_1−xSr_xMnO₃ (LSMO) films were prepared by excimer laser-assisted metal organic deposition (ELAMOD) at a low temperature using ArF, KrF, and XeCl excimer lasers. Cross-section transmission electron microscopy (XTEM) observations confirmed the epitaxial growth and homogeneity of the LSMO film on a SrTiO₃ (STO) substrate, which was prepared using ArF, KrF, and XeCl excimer lasers. It was found that uniform epitaxial films could be grown at 500 °C by laser irradiation. When an XeCl laser was used, an epitaxial film was formed on the STO substrate at a fluence range from 80 to 140 mJ/cm² of the laser fluence for the epitaxial growth of LSMO film on STO substrate was changed. When the LaAlO₃ (LAO) substrate was used, an epitaxial film was only obtained by ArF laser irradiation, and no epitaxial film was obtained using the KrF and XeCl lasers. When the back of the amorphous LSMO film on an LAO substrate was irradiated using a KrF laser, no epitaxial film formed. Based on the effect of the wavelength and substrate material on the epitaxial growth, formation of the epitaxial film would be found to be photo thermal reaction and photochemical reaction. The maximum temperature coefficient of resistance (TCR) of the epitaxial La_0.8Sr_0.2MnO₃ film on an STO substrate grown using an XeCl laser is 4.0%/K at 275 K. XeCl lasers that deliver stabilized pulse energies can be used to prepare LSMO films with good a TCR.     

Formation and lithium doping of graphene on the surface of cobalt silicide

The intercalation of silicon under graphene on the Co(0001) surface, which is accompanied by the formation of a silicon solid solution in cobalt and by the formation of a surface crystalline Co₂Si phase, has been investigated using photoelectron spectroscopy. It has been shown that the formation of cobalt silicide leads to a substantial weakening of the hybridization of electronic states of graphene and cobalt and to the recovery of the Dirac spectrum of electronic states of graphene near the Fermi level. This has made it possible to investigate the electron doping of graphene on the cobalt silicide substrate upon deposition of lithium on its surface. It has been found that doping with lithium leads to a significant charge transfer onto graphene, and the electron concentration reaches 3.1 × 10¹⁴ cm^?2. Moreover, the specific form of the Fermi surface creates favorable conditions for the enhancement of the electron-phonon coupling. As a result, the formed system can be considered as a candidate for the creation of superconductivity in single-layer graphene.     

Preparation of the La0.8Sr0.2MnO3 films on STO and LAO substrates by excimer laser-assisted metal organic deposition using the KrF laser

La_0.8Sr_0.2MnO₃ films were prepared on SrTiO₃ (STO) and LaAlO₃ (LAO) substrates using excimer laser-assisted metal organic deposition (ELAMOD). For the LAO substrate, no epitaxial La_0.8Sr_0.2MnO₃ film was obtained by laser irradiation in the fluence range from 60 to 110 mJ/cm² with heating at 500 °C. On the other hand, an epitaxial La_0.8Sr_0.2MnO₃ film on the STO substrate was formed by laser irradiation in the fluence range from 60 to 100 mJ/cm² with heating at 500 °C. To optimize the electrical properties for an IR sensor, the effects of the laser fluence, the irradiation time and the film thickness on the temperature dependence of the resistance and temperature coefficient of resistance (TCR: defined as 1/R·(dR/dT)) of the LSMO films were investigated. An LSMO film on the STO substrate that showed the maximum TCR of 3.9% at 265 K was obtained by the ELAMOD process using the KrF laser.     

FMR study of the anisotropic properties of an epitaxial Fe<Subscript>3</Subscript>Si film on a Si(111) vicinal surface

The anisotropic characteristics of an iron silicide (Fe₃Si) epitaxial thin magnetic film grown on a Si(111) silicon vicinal surface with a misorientation angle of 0.14° have been measured by the ferromagnetic resonance method. It has been shown that the polar and azimuth misorientation angles of the crystallographic plane of the substrate can be determined simultaneously from the angular dependences of the ferromagnetic resonance field of the epitaxial film. The effective saturation magnetization of the film M _eff = 1105 G and the constant of the cubic magnetocrystalline anisotropy K ₄ = 1.15 × 10⁵ erg/cm³ have been determined. The misorientation of the substrate plane leads to the formation of steps on the film surface and, as a result, to the appearance of uniaxial magnetic anisotropy of the magnetic dipole nature with the constant K ₂ = 796 erg/cm³. Small unidirectional magnetic anisotropy (K ₁ = 163 erg/cm³), which may be associated with symmetry breaking on the steps of the film and is due to the Dzyaloshinskii–Moriya interaction, has been detected.     

不同极性6H-SiC表面石墨烯的制备及其电子结构的研究

在超高真空设备中,采用高温退火的方法在6H-SiC两个极性面(0001)和(000 1 - )面(即Si面和C面)外延石墨烯(EG). 利用低能电子衍射(LEED)和同步辐射光电子能谱(SRPES)对样品的生长过程进行了原位研究,而后利用激光拉曼光谱(Raman)和近边X射线吸收精细结构(XANES)等实验技术对制备的样品进行了表征. 结果表明我们在两种极性面均制备出了质量较好的石墨烯样品. 而有关两种石墨烯的对比性研究发现:Si面EG呈同一取向而C面EG呈各向异性;Si面EG与衬底存在类似 关键词： 石墨烯 6H-SiC 同步辐射 电子结构     

Si/Si<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>: Er/Si(100) heterostructures grown by sublimation of silicon in germane gas atmosphere

High-quality Si_{1 ? x} Ge _x :Er epitaxial layers have been grown on Si(100) substrates at a relatively low temperature (500°C) by sublimation of silicon in GeH₄ gas atmosphere. It has been established using capacitance-voltage measurements, X-ray diffraction, and secondary-ion mass spectrometry that the spread in the deposited layer thickness in the central part of the substrate (40 × 10 mm² in size) is 5%. High homogeneity of layer doping is obtained within the same area.     

Electrical characteristics of insulating aluminum nitride MIS nanostructures

Capacitance-voltage measurements of high quality PECVD and MBE grown aluminum nitride (AlN) thin films have been performed. The prepared films have shown polycrystalline (0 0 2)-preferential orientation, and were deposited on p-type Si (1 0 0) substrates with Pt forming the metal gate in a metal-insulator-semiconductor (MIS) configuration. The structure, crystallinity, texture and insulating properties have been found to depend on film thickness and were substantially influenced by the increase of the thickness. C-V measurements of the epitaxial and PECVD films were carried out and their insulating characteristics with increasing thickness (200-1000 nm) were investigated. The epitaxial films exhibited no hysteresis in capacitance behaviour, owing to better crystalline quality over the PECVD grown ones. Capacitance curves versus bias voltage have also been acquired at different temperatures; 10 K, 30 K and 50 K for deposited polycrystalline AlN films of (0 0 2) orientation. We have found that the defects trapped in the Pt/AlN/Si structure played a key role in dominating the overall behaviour of the C-V measurement curves. The trapped charges at the interface between the AlN insulating film and Si substrate caused the capacitance characteristics to shift to negative voltages, and the estimated charge density was of the order of 10¹⁰ and 10⁸ cm⁻² eV⁻¹ for the PECVD and epitaxial samples respectively. The I-V measurements referred to space-charge conduction mechanism, and the deduced leakage current was found to be of the order of 10⁻⁹ A at 200 nm film thickness.     

SUPERCONDUCTING PROPERTIES AND STRUCTURAL PERFECTION OF EPITAXIAL YBa2Cu3O7-x THIN FILMS

High quality epitaxial YBa₂Cu₃O_7-x thin films have been succcessfully prepared by dc magnetron sputtering deposition, on (100) and (110) aligned SrTiO₃, LaAlO₃ and yttria-stabilized zirconia (YSZ) substrates. The films showed zero resistance around 90 K and had a J_c (at 77 K, H=0) over 10⁶A/cm². It was found that superconducting properties and structures of the films were strongly dependent on oxygen pressure and substrate temperature. The epitaxial structure of the films have been studied by X-ray diffraction. Rutherford backscattering and channeling spectroscopy, X-ray double-crystal diffraction and transmission election microscopy. The experimental results demonstrated that the epitaxial YBa₂Cu₃O_7-x films had excellent superconducting properties and quite perfect structure.     

Role of 3D-paired pentagon–heptagon defects in electronic and transport properties of zigzag graphene nanoribbons

Electronic and transport properties of 11 zigzag graphene nanoribbons (11-z-GNRs) with two types of 3D-paired pentagon–heptagon defects (3D-PPHDs) are studied using density functional theory combined with non-equilibrium Green’s function method. The C ad-dimers that have been introduced to z-GNRs to form these 3D-PPHDs have induced local strains forcing the C-bonds in the ad-dimers to hybridize in sp³-like rather than sp²-like orbitals. Such transformations that cause extra electrons to accumulate around the 3D-PPHDs are responsible for the variations in the electronic and transport properties of the defected z-GNRs. Density of states (DOS) for 11-z-GNRs containing either type of 3D-PPHDs, compared with that of the pristine 11-z-GNR, exhibits a peak at a particular energy level below the Fermi level, within its first plateau. Each peak, corresponding to a dip in the related zero-bias conductance profile, is attributed to electrons trapped in the localized states around the same energy level. The current–voltage (I–V) characteristics are almost linear for 11-z-GNR defected by either type of 3D-PPHD. Presence of a 3D-PPHD, made by addition of a single C ad-dimer, above an 11-z-GNR super-cell decreases its average conductance by 10.7 %, while a 3D-PPHD made by addition of two C ad-dimers to the opposite sides of the same 11-z-GNR super-cell decreases its conductance by 23 %.