Study of the structure of a superconducting state of Co-doped BaFe2As2 multiband compounds

The terahertz and infrared spectra of the complex dynamic conductivity, as well as the temperature dependences of the density of a superconducting condensate and the electronic specific heat of superconducting Ba(Fe_{1 ? x} Co _x )₂As₂ compounds, have been analyzed within a Bardeen-Cooper-Schrieffer-like model of a multiband superconductor with strong coupling. It has been shown that the superconducting state of these compounds is determined by three (one electronic and two hole) weakly interacting condensates. The order parameters of the condensates are: Δ₁ ≈ 15 cm^?1, Δ₂ ≈ 21 cm^?1, and Δ₃ ≈ 30–35 cm^?1. The results significantly refine the existing notions on the structure of the superconducting state of Co-doped BaFe₂As₂ multiband compounds.     

Low temperature subband 2D electron mobilities in heavy delta- and modulation doped GaAs/GaAlAs heterostructures

We synthesised high-2D electron-density GaGs/GaAlAs heterostructures with different distance L_σ of Si delta-layer in GaAs from the heterojunction and uniform doped GaAlAs. The quantum Hall effect and Shubnikov-de Haas effect were measured for temperatures down to 0.4 K in magnetic fields up to 40 T. The enhanced 2D electron concentration achieved was 1.1^*10¹³ cm^?2 in six filled subbands. The Hall mobility depends on L_σ and has maximum for L_σ=600÷750Å. From the amplitudes of the SdH oscillations and Fourier transforms the subband mobilities and electron concentration in each subband have been extracted. According to calculations intersubband electron scattering appears to be important and reduces mobilities in subbands.     

Hall effect and magnetoresistance of (SN)x films

Hall effect and electrical conductivity have been investigated between 77 K and 300 K and the magnetoresistance at 4.2 K for a number of (SN)_x films deposited at substrate temperatures between — 10 and 50°C. The small magnitude of the Hall mobility (? 1 cm² Vsec^?1 at 300 K) and its activated temperature dependence are interpreted in terms of a heterogenous model for (SN)_x films with thin depletion layers separating highly conductive islands. The hole concentration in these islands (p ≈ 10²¹ cm^?3, the microscopic mobility (μ ≈ 500 cm² Vsec^?1 at 4.2 K) and the temperatures dependence of μ are found to be close to values for (SN)_x crystals.     

Evaporated a-Si films with low ESR defect density by hydrogenation under NH3 ambient

a-Si films were obtained by a reactive evaporation of Si atoms with an electron gun, under a NH₃ ambient of 5 × 10^?5 torr. The H introduced amount efficiently reduces the ESR dangling bond density from 4 × 10¹⁹ cm^?3 in pure samples to 2 × 10¹⁷ cm^?3. The hydrogen presence is evidence by both the Si-H infrared bands and the strong spin-density increase with annealing. This increase, beginning at a temperature of 350°C, is attributed to the H effusion. XPS measurements show also an incorporation of bonded nitrogen.     

The effect of annealing on the room temperature ferromagnetism in co-sputtered In2O3: C thin films

In this paper, we report investigation of room temperature (RT) ferromagnetism in In₂O₃ (InO) thin films doped with carbon prepared by the co-sputtering method. InO thin films both undoped and C doped with varied thicknesses in the range of 45 to 80 nm were synthesized on Si substrates with varied C concentrations. The carbon concentration was varied from 1.6 to 9.3 at%. The undoped InO films showed no trace of ferromagnetism. Carbon doped films (InO:C) exhibited ferromagnetism at RT, which was of the orders of 10⁻⁵ emu and varied strongly with C concentrations. It is observed that the magnetization reached a maximum value of 5.7 emu/cm³ at 4 at% C. Annealing of the InO:C films in an oxygen environment resulted in a decrease in the magnetization, indicating the crucial role of oxygen vacancies in the films. It is concluded that the oxygen vacancies were important and compete with C substitution for the RT ferromagnetism.     

Positron annihilation in γ-irradiated pure and Mg-doped LiF

Positron annihilation lifetime spectra in unirradiated and γ-irradiated pure LiF and heavily doped LiF∶Mg have been resolved into three components. The intensity of the intermediate lifetime component increases in proportion to theF-center concentration for both materials until saturation occurs (≈1.4×10¹⁷ cm^?3 in LiF and ≈5.7×10^?17 cm^?3 in LiF∶Mg). The presence of a large positive ion vacancy concentration appears to have a much smaller effect than has been observed in KCl∶Ca.     

Effects of hydrogen flow on properties of hydrogen doped ZnO thin films prepared by RF magnetron sputtering

The hydrogen doped ZnO (ZnO:H) thin films were deposited on quartz glass substrates by radio frequency magnetron sputtering. The doping characteristics of ZnO:H thin films with varied hydrogen flow ratio were investigated. At low hydrogen flow ratio (H₂/(H₂+Ar)≤0.02), the ZnO:H thin films exhibited dominant (002) peaks from X-ray diffraction and the lattice constants became smaller. The particles were mainly a columnar structure. The particles’ size became smaller, and the island-like structure appeared on the thin films surface. In addition, the low resistivity properties of ZnO:H thin films was ascribed to the increase of the carriers concentration and carriers mobility; When the hydrogen flow ratio was more than 0.02 (M≥0.02), two absorption bands at 1400–1800 cm^?1 and 3200–3900 cm^?1 were observed from the FT-IR spectra, which indicated that the ZnO:H thin films had typical Zn–H bonding, O–H bonding (hydroxyl), and Zn–H–O bonding (like-hydroxyl). The scanning electron microscope (SEM) results show that a large number of hydroxyl agglomeration formed an island-like structure on the thin films surface. The absorption peak at about 575 cm^?1 in the Raman spectra indicated that oxygen vacancies (V_O) defects were produced in the process of high hydrogen doping. In this condition, the low resistivity properties of ZnO:H thin films were mainly due to the increasing electron concentration resulted from V_O. Meanwhile, the Raman absorption peaks at approximately 98 cm^?1 and 436 cm^?1 became weaker, and the (002) XRD diffraction peak quenched and the lattice constants increased, which shows that the ZnO:H thin films no longer presented a typical ZnO hexagonal wurtzite structure. With the increasing of hydrogen flow ratio, the optical transmittance of ZnO:H thin films in the ultraviolet band show a clear Burstein–Moss shift effect, which further explained that electron concentration was increased due to the increasing V_O with high hydrogen doping concentration. Moreover, the optical reflectance of the thin films decreased, indicating the higher roughness of the films surface. It was noteworthy that etching effect of H plasma was obvious in the process of heavy hydrogen doping.     

Growth of high-quality ZnO thin films on (11\bar{2}0) a-plane sapphire substrates by plasma-assisted molecular beam epitaxy

High-quality ZnO thin films were grown on a-plane sapphire substrates by plasma-assisted molecular beam epitaxy. X-ray diffraction and transmission electron microscopy reveal that the ZnO films have high structural quality and an atomically sharp ZnO/Al₂O₃ interface. The full width at half maximum values of the 0002 and $30\bar{3}2$ ZnO ω-rocking curves are 467.8 and 813.5 arc sec for a 600 nm thick ZnO film. A screw dislocation density of 4.35×10⁸ cm^?2 and an edge dislocation density of 3.38×10⁹ cm^?2 are estimated by X-ray diffraction. The surface of the ZnO epilayers contains hexagonal pits, which can be observed in the Zn-polar ZnO. The films have a resistivity of 0.119 Ω?cm, an electron concentration of 6.85×10¹⁷ cm^?3, and a mobility of 76.5 cm²?V^?1?s^?1 at room temperature. Low temperature photoluminescence measurements show good optical properties comparable to ZnO single crystals.     

High resolution studies of NiSi2 ultrathin film formation by ion scattering and cross-section tem

Ultrathin epitaxial NiSi₂ films (0–40 Å) have been grown on Si(111) surfaces. Medium energy ion shadowing and blocking has been used to determine the orientation, morphology and interfacial order of these films. For the whole coverage range studied ((0–1) × 10¹⁶ Ni $\text{atoms}\text{cm}{}^2$) the films are found to be rotated 180° about the surface normal with respect to the Si(111) substrate. Using the high depth resolution of the technique the annealed films are shown to consist initially of islands, which coalesce into continuous films for coverages above ≈ 5 × 10¹⁵ Ni $\text{atoms}\text{cm}{}^2$. High resolution cross-section transmission electron microscopy shows the NiSi₂Si interface to be atomically abrupt. This interface has been probed directly using the ion channeling technique, and the number of disordered Ni atoms at the interface is found to be less than 7.5 × 10¹³$\text{atoms}\text{cm}{}^2$.     

Structural, optical and electrical properties of molybdenum-doped cadmium oxide thin films prepared by spray pyrolysis method

Molybdenum-doped cadmium oxide films were prepared by a spray pyrolysis technique at a substrate temperature of 300?°C. The effect of doping on structural, electrical and optical properties were studied. X-ray analysis shows that the undoped CdO films are preferentially oriented along the (111) crystallographic direction. Molybdenum doping concentration increases the films?? packing density and reorients the crystallites along the (200) plane. A?minimum resistivity of 4.68×10^?4????cm with a maximum mobility of 75?cm²?V^?1?s^?1 is achieved when the CdO film is doped with 0.5?wt.% Mo. The band-gap value is found to increase with doping and reaches a maximum of 2.56?eV for 0.75?wt.% as compared to undoped films of 2.2?eV.     

Silicon negative ion implantation induced vacancy defects in thermally grown SiO2 thin films

ABSTRACT

Thermally grown SiO₂ thin films on a silicon substrate implanted with 100?keV silicon negative ions with fluences varying from 1?×?10¹⁵ to 2?×?10¹⁷ ions cm^?2 have been investigated using Electron spin resonance, Fourier transforms infrared and Photoluminescence techniques. ESR studies revealed the presence of non-bridging oxygen hole centers, E′-centers and P_b-centers at g-values 2.0087, 2.0052 and 2.0010, respectively. These vacancy defects were found to increase with respect to ion fluence. FTIR spectra showed rocking vibration mode, stretching mode, bending vibration mode, and asymmetrical stretching absorption bands at 460, 614, 800 and 1080?cm^?1, respectively. The concentrations of Si–O and Si–Si bonds estimated from the absorption spectra were found to vary between 11.95?×?10²¹ cm^?3 and 5.20?×?10²¹ cm^?3 and between 5.90?×?10²¹ cm^?3 and 3.90?×?10²¹ cm^?3, respectively with an increase in the ion fluence. PL studies revealed the presence of vacancies related to non-bridging oxygen hole centers, which caused the light emission at a wavelength of 720?nm.     

Influence of precursor gas ratio and firing on silicon surface passivation by APCVD aluminium oxide

Using a high throughput, in‐line atmosphere chemical vapor deposition (APCVD) tool, we have synthesized amorphous aluminum oxide (AlO_x) films from precursors of trimethyl‐aluminum (TMA) and O₂, yielding a maximum deposition 150 nm min^–1 per wafer. For p‐type crystalline silicon (c‐Si) wafers, excellent surface passivation was achieved with the APCVD AlO_x films, with a best maximum effective surface recombination velocity (S_eff,max) of 8 cm/s following a standard industrial firing step. The findings could be attributed to the existence of large negative charge (Q_f ≈ –3 × 10¹² cm^–2) and low interface defect density (D_it ≈ 4 × 10¹¹ eV^–1 cm^–2) achieved by the films. This data demonstrates a high potential for APCVD AlO_x to be used in high efficiency, low cost industrial solar cells. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Theoretical study of electron mobility for silicon-carbon alloys

Electron mobilities in strained Si_1−xC_x layers grown on a Si substrate and relaxed alloys are calculated as functions of carbon content, alloy scattering potential, and doping concentration at room temperature. The electron mobility model is backed by experimental data. In the case of doped strained Si_1−xC_x, the results of our electron mobility model indicates that for systems with a doping concentration greater than 10¹⁸ cm⁻³, there is no substantial decrease in the in-plane mobility with an increase in the carbon mole fraction. However, for low doping concentrations, the mobility decreases with a decrease in the carbon mole fraction.     

Electron–muon dynamics in n‐type silicon

We report RF‐μSR results in lightly n‐doped Si samples. Measurement of the diamagnetic amplitude in both the \langle 100\rangle and \langle 111\rangle directions for a sample with N_D\leq5\times 10¹²\ cm^-3 clarifies the charge/spin electron‐exchange dynamics for bond‐centered muonium and yields a 3300 Å ² electron‐capture cross section at Mu⁺ _BC. An increase in the Mu⁰ _BC RF amplitude observed at 30K in a sample of N_D\simeq 2\times 10¹³\ cm^-3 provides direct evidence for enhanced low‐temperature creation of Mu_BC ⁰ at the expense of Mu_T ⁰0 with increased electron concentration.     

氢离子注入对硅单晶电子辐照缺陷和氢泡形成的影响

以50keV和100keV能量的氢离子注入p型(100)直拉硅单晶薄膜。注入剂量为10¹⁵—2×10¹⁷H⁺/cm²。试样在HU-1300型超高压透射电子显微镜中进行电子辐照和原位加热动态观察。结果表明在20—300℃温度范围内与未注氢硅相比,注氢硅在相同的电子辐照条件下产生的电子辐照缺陷较少,电子辐照缺陷形成所需的潜伏时间较长。在电子显微镜中加热试样时于190℃开始观察到氢泡,190—220℃范围内氢泡逐渐产生并长大 关键词：     

Photoluminescence and EPR of porous silicon formed on <Emphasis Type="Italic">n</Emphasis><Superscript>+</Superscript> and <Emphasis Type="Italic">p</Emphasis><Superscript>+</Superscript> single crystals implanted with boron and phosphorus ions

The effect of combined doping by shallow donor and acceptor impurities on boosting the quantum yield of porous-silicon photoluminescence (PL) in the visible and near IR range was studied using phosphorus and boron ion implantation. Nonuniform doping of samples and subsequent oxidizing annealing were performed before and after porous silicon was formed on silicon single crystals strongly doped by arsenic or boron up to ≈10¹⁹ cm^?3. The concentration of known P_b centers of nonradiative recombination was controlled by electron paramagnetic resonance. It is shown that there is an optimal joined content of shallow donors and acceptors that provides a maximum PL intensity in the vicinity of the red part of the visible spectrum. According to estimates, the PL quantum yield in the transitional n ⁺⁺-p ⁺ or p ⁺⁺-n ⁺ layer of porous silicon increases by two orders of magnitude as compared to that in porous silicon formed on silicon not subjected to ion irradiation.     

EPR identification of the iron charge transfer in CuAlS2:Fe

The EPR spectrum of Fe²⁺ has been observed in CuAlS₂. It consists of a single line with g^eff₆ ≈ 9.5 at 34.8 GHz. An analysis yields the following crystal field parameters: 10Dq ≈ 3600 cm^?1, μ ≈ 800 cm^?1 and δ ≈ 900 cm^?1. It is found that Fe³⁺ can be converted into Fe²⁺ by irradiation with light of energies considerably less than the band gap. These results directly confirm the charge transfer model previously suggested for CuAlS₂:Fe.     

Hall effect in electrically switched memory state of Te81Ge15As4

Conductivity and Hall effect measurements were performed in the electrically switched memory state of Te₈₁Ge₁₅As₄ at various temperatures. According to the experimental data the conductivity is mainly due to free holes. Both carrier concentration and Hall mobility are temperature independent and of the order of 10²⁰ cm^?3 and 50 cm²V^?1 sec^?1 respectively.     

Carrier transport and luminescence properties of n-type GaN

The surface morphology, electrical properties and optical properties of Si doped n-type GaN were investigated. The intentional SiH₄ doped GaN films were grown by metal organic chemical vapor deposition with the electron concentration varying from 3×10¹⁶ cm⁻³ to 5.4×10¹⁸ cm⁻³. The surface morphology shows that the roughness and dislocation pits increase as the mass flow rate of SiH₄ increases, which indicates that the quality of GaN degrades gradually. The activation energy of Si in GaN with different n concentrations varies from 12 to 22 meV, which may originate from the interactions of donor wave functions. The carrier transport mechanism with increasing temperature from 100 to 420 K was concluded as the complex effect of both impurity scattering and phonon scattering. The position of the near band edge emission peak was determined by both renormalization of the band gap and B-M effect. The intensity variations of the yellow luminescence could be explained by the change of Ga vacancy concentration caused by Si doping. Supported by the National Basic Research Program of China (Grant No. 2006CB6049), the National Hi-Tech Research and Development Program of China (Grant No. 2006AA03A142), the National Natural Science Foundation of China (Grant Nos. 60721063, 60731160628 and 60676057), the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20050284004) and the Natural Science Foundation of Jiangsu Province of China (Grant No. BK2005210)     

Photoinduced phenomena in amorphous As<Subscript>4</Subscript>S<Subscript>3</Subscript>Se<Subscript>3</Subscript>–Sn films

We investigate the kinetics of photodarkening and recording of holographic diffraction gratings in amorphous As₄S₃Se₃ thin-film structures doped with tin (Sn) in concentrations of 0–10 at %. It is established that an increase in the Sn concentration leads to a decrease in the photodarkening rate and degree. The photodarkening kinetics is approximated by a stretched exponential function. It is found that an increase in the Sn concentration leads to a decrease in the transmission (photodarkening) variation in the investigated As₄S₃Se₃–Sn films. It is determined that, in the recording of holographic diffraction gratings at a Sn concentration of 3–8 at %, the As₄S₃Se₃–Sn films exhibit the maximum sensitivity and diffraction efficiency of the recorded gratings. It is shown that the dependence of diffraction efficiency on the As₄S₃Se₃ film thickness has the maximum at a film thickness of 4 µm.