探索粒子物理世界的高速相机——像素探测器

在日常生活中,为了捕捉一瞬间的事件,人们通常利用相机抓拍,然后根据照片来回味那一刻的精彩,使瞬间成为永恒.为了拍摄百米赛跑冲线的那一刹那,更需要利用每秒可拍摄上千张照片的高速相机来进行记录,即使是百分之一秒的时间差,都有可能导致一个新的世界纪录的诞生.     

ALICE实验内径迹系统探测器升级

大型重离子对撞实验(A Large heavy-Ion Collision Experiment,ALICE)按计划在大型强子对撞机(Large Hadron Collider,LHC)的第二次停机(2019—2021)期间进行探测器升级工作。为了对强相互作用物质——夸克胶子等离子体(Quark-Gluon Plasma,QGP)的性质进行更细致的研究,作为升级计划中重要的一个内容是把ALICE实验现有的内径迹系统探测器(Inner Tracking System,ITS)全面升级为基于单片有源像素传感器(Monolithic Active Pixel Sensor,MAPS)技术的硅像素探测器(习惯称之为ITS2),并在Run 3和Run 4期间采集更多的铅核-铅核碰撞数据。新的ITS2共由7层(内3层,中间2层和外2层)探测桶面组成,共由24 000余片尺寸为3 cm × 1.5 cm的MAPS硅像素芯片(该芯片称之为ALPIDE)构成,有效探测面积达10 m2,共约120亿像素。ALPIDE芯片厚度为50 μm,单个像素的尺寸是27 μm × 29 μm,该芯片具有低功耗、高空间分辨率和高速读出等特点。ITS2将使ALICE探测器在测量极低横动量粒子时具备优异的探测效率和碰撞参数分辨率,同时也使ALICE探测器适应于LHC高束流亮度环境。目前ITS2的探测器模块量产和测试已于2019年完成,并在欧洲核子中心(CERN)洁净室完成了7层桶面的组装与安装,于2020年完成试运行测试。2021年1月启动ITS2在ALICE探测器中的安装与试运行工作,计划于2021年5月底完成ITS2的安装与测试。本工作将对ALICE/ITS2的探测器结构、ALPIDE芯片和升级进展等方面进行介绍。     

三维H形栅SOINMOS器件总剂量条件下的单粒子效应

本文通过数值模拟研究了H形栅SOI NMOS器件在总剂量条件下的单粒子效应. 首先通过分析仿真程序中影响迁移率的物理模型, 发现通过修改了的由于表面散射造成迁移率退化的Lombardi模型, 仿真的SOI晶体管转移特性和实测数据非常符合. 然后使用该模型, 仿真研究了处于截止态 (V_D=5V) 的 H形栅SOI NMOS器件在总剂量条件下的单粒子效应. 结果表明: 随着总剂量水平的增加, 器件在同等条件的重离子注入下, 产生的最大漏极电流脉冲只是稍有增大, 但是漏极收集电荷随总剂量水平大幅增加. 关键词： 单粒子脉冲电流 漏极收集电荷 总剂量效应     

用于像素探测器的高事例率高精度TDC ASIC原型电路的设计与仿真

像素探测器因其优异的位置分辨能力在高能粒子物理实验的内径探测器中有着广泛应用,随着应用场景的发展,许多物理实验要求探测器及其读出电子学也具备高精度时间测量的能力。针对像素探测器时间测量的需求,设计完成了一款具备高事例率处理能力、高精度特点的TDC(Time-to-Digital Conversion)ASIC(Application Specific Integrated Circuit)原型电路,将来可以作为核心组成部分集成到像素探测器前端读出ASIC中。采用粗细结合的方案完成TDC的设计,其中粗时间测量基于计数器实现,细时间测量采用TAC(Time-to-Amplitude Converter)结合ADC(Time-to-Amplitude Converter)的结构实现,基于130 nm工艺完成了原型电路的设计。对TDC进行仿真,仿真结果表明,该电路可以最多处理连续11个事例,相邻事例的最短时间间隔为500 ps,bin size达到了2 ps,DNL(Differential Non-Linearity)小于2.8 ps,时间测量精度好于5 ps RMS。     

基于选区外延技术的单片集成阵列波导光栅与单载流子探测器的端对接设计

选区外延技术是实现有源与无源光器件单片集成的一种有效的工艺手段,但同时对两种器件在异质生长界面处的对接结构提出了更高的设计要求.本文通过选区外延技术实现了InP基O波段4通道阵列波导光栅与单载流子探测器的单片集成.通过光学仿真重点研究了选区外延后界面处形貌对无源波导结构与有源光探测器间光耦合效率的影响,包括伸长的光学匹配层、二次外延生长边界位置、波导刻蚀边界位置等因素.研究结果表明,在保证二次外延生长边界对准异质对接界面时,将光学匹配层伸出探测器前端10μm并与外延边界无缝对接既可以保证高效的光传输效率(或探测器量子效率),又可以避免外延界面处的异常生长对器件制备工艺的影响,保证生长工艺与器件制备工艺的兼容性.成功制备的单片集成芯片具有高达76%的探测器量子效率,证明了对接方案的有效性.同时,集成芯片的低串扰(-22 dB)与解复用特性展示出其作为解复用光接收芯片具有巨大潜力.     

化学气相沉积金刚石薄膜探测器对α粒子的电荷收集效率

实验测量了自行研制的三明治电极结构化学气相沉积(CVD)金刚石薄膜探测器在室温下对241Am, 243Am 与244Cm α粒子的能谱响应,得到了其α粒子响应电荷收集效率随偏压的变化关系;获得了不同偏压下其相对平均电荷收集效率及响应谱下降沿10%处的相对电荷收集效率。结果表明：所研制的CVD金刚石薄膜探测器性能稳定,对α粒子响应的电荷收集效率随偏压的增加而趋于饱和,对α粒子平均电荷收集效率达33.5%,谱下降沿10%处的电荷收集效率达57%。     

化学气相沉积金刚石薄膜探测器对α粒子的电荷收集效率

 实验测量了自行研制的三明治电极结构化学气相沉积(CVD)金刚石薄膜探测器在室温下对241Am, 243Am 与244Cm α粒子的能谱响应,得到了其α粒子响应电荷收集效率随偏压的变化关系;获得了不同偏压下其相对平均电荷收集效率及响应谱下降沿10%处的相对电荷收集效率。结果表明：所研制的CVD金刚石薄膜探测器性能稳定,对α粒子响应的电荷收集效率随偏压的增加而趋于饱和,对α粒子平均电荷收集效率达33.5%,谱下降沿10%处的电荷收集效率达57%。     

A novel simulation method to evaluate the collection performance of a monolithic active pixel sensor

A novel simulation method is presented in this paper to evaluate the collection performance of monolithic active pixel sensor (MAPS) devices for minimum ionizing particle tracking. A simplified 3D matrix pixel structure is built using the computer aided design software Sentaurus. The virtual device is then divided into hundreds of parts and an independent customized X photon model is involved in each part to simulate the conditions under ⁵⁵Fe radiation. After data processing and analysis, charge collection efficiency, collection time and diffusion conditions can be estimated in detail. In order to verify the reliability of the method, comparisons are made between the simulations and experiments. Although there are some defects, it can be concluded that the proposed idea is a feasible method for the evaluation of the MAPS collection performance.     

用激光微细加工制作平面型InGaAs/InP PIN 光探测器

 采用激光微细加工技术来制作单片集成光接收机的探测器,在制作过程中,用固态杂质源10.6 μm激光诱导Zn扩散工艺来进行探测器的p-区掺杂。制作出平面型顶部入射的InGaAs/InP PIN 光探测器,响应度为0.21 A/W。分析了激光诱导扩散中影响探测器性能的因素,因此提出了扩散温度自动控制、扩散区温度分布均匀化及激光焦斑与扩散区精确对准等相应的改进方法。     

用激光微细加工制作平面型InGaAs/InP PIN 光探测器

采用激光微细加工技术来制作单片集成光接收机的探测器,在制作过程中,用固态杂质源10.6 μm激光诱导Zn扩散工艺来进行探测器的p-区掺杂。制作出平面型顶部入射的InGaAs/InP PIN 光探测器,响应度为0.21 A/W。分析了激光诱导扩散中影响探测器性能的因素,因此提出了扩散温度自动控制、扩散区温度分布均匀化及激光焦斑与扩散区精确对准等相应的改进方法。     

Monolithic CMOS pixel detector for international linear collider vertex detection

A monolithic CMS pixel detector is under development for an ILC experiment. This chronopixel array provides a time stamp resolution of one bunch crossing, a critical feature for background suppression. The status of this effort is summarized.      

CdZnTe像素探测器的电输运性能

碲锌镉(CdZnTe)是一种性能优异的室温核辐射半导体探测器材料,广泛应用于核安全、核医学以及空间科学等领域.然而,传统的CdZnTe平面探测器受制于"空穴拖尾"效应的影响,探测性能有待改善.采用改进的垂直布里奇曼法生长的In掺杂Cd_(0.9)Zn_(0.1)Te单晶制备出单载流子收集的4×4像素阵列探测器,通过电流-电压(I-V)测试和γ射线能谱响应测试,研究了像素探测器的电学性能和载流子电输运性能,随之与相应的CdZnTe平面探测器进行了性能对比.结果表明,CdZnTe像素探测器的电阻率约为1.73×10~(10)?·cm,且施加100 V偏压后单像素点的最大漏电流小于2.2 nA;当施加偏压升高至300 V时,单像素点对~(241)Am@59.5 keV的γ射线的最佳能量分辨率可达5.78%,探测性能优于相同条件下制备的CdZnTe平面探测器.     

Test of a fine pitch SOI pixel detector with laser beam

A silicon pixel detector with fine pitch size of 19 μm× 19 μm, developed based on SOI(silicon-oninsulator) technology, was tested under the illumination of infrared laser pulses. As an alternative method for particle beam tests, the laser pulses were tuned to very short duration and small transverse profile to simulate the tracks of MIPs(minimum ionization particles) in silicon. Hit cluster sizes were measured with focused laser pulses propagating through the SOI detector perpendicular to its surface and most of the induced charge was found to be collected inside the seed pixel. For the first time, the signal amplitude as a function of the applied bias voltage was measured for this SOI detector, deepening understanding of its depletion characteristics.     

X‐ray analog pixel array detector for single synchrotron bunch time‐resolved imaging

Dynamic X‐ray studies can reach temporal resolutions limited by only the X‐ray pulse duration if the detector is fast enough to segregate synchrotron pulses. An analog integrating pixel array detector with in‐pixel storage and temporal resolution of around 150 ns, sufficient to isolate pulses, is presented. Analog integration minimizes count‐rate limitations and in‐pixel storage captures successive pulses. Fundamental tests of noise and linearity as well as high‐speed laser measurements are shown. The detector resolved individual bunch trains at the Cornell High Energy Synchrotron Source at levels of up to 3.7 × 10³ X‐rays per pixel per train. When applied to turn‐by‐turn X‐ray beam characterization, single‐shot intensity measurements were made with a repeatability of 0.4% and horizontal oscillations of the positron cloud were detected.     

电流型探测器单粒子灵敏度标定的原理及应用

采用电荷模数转换记录单个脉冲电荷的方法,标定了单能射线在电流型闪烁探测器中产生的平均电流,从而得到其灵敏度。标定结果与传统的电流法在±8%的范围内一致。该标定方法准确度高,扣除本底容易,对标定源的强度要求也大大降低。加上飞行时间法,还可对粒子进行甄别,能在中子-γ射线混合场中将中子和γ射线的电荷贡献分开,得到探测器对每种射线单独的灵敏度。该方法适用于在单个脉冲电荷信噪比较高的场合下标定脉冲电流型探测器。     

Energy resolution of the CdTe‐XPAD detector: calibration and potential for Laue diffraction measurements on protein crystals

The XPAD3S‐CdTe, a CdTe photon‐counting pixel array detector, has been used to measure the energy and the intensity of the white‐beam diffraction from a lysozyme crystal. A method was developed to calibrate the detector in terms of energy, allowing incident photon energy measurement to high resolution (approximately 140 eV), opening up new possibilities in energy‐resolved X‐ray diffraction. In order to demonstrate this, Laue diffraction experiments were performed on the bending‐magnet beamline METROLOGIE at Synchrotron SOLEIL. The X‐ray energy spectra of diffracted spots were deduced from the indexed Laue patterns collected with an imaging‐plate detector and then measured with both the XPAD3S‐CdTe and the XPAD3S‐Si, a silicon photon‐counting pixel array detector. The predicted and measured energy of selected diffraction spots are in good agreement, demonstrating the reliability of the calibration method. These results open up the way to direct unit‐cell parameter determination and the measurement of high‐quality Laue data even at low resolution. Based on the success of these measurements, potential applications in X‐ray diffraction opened up by this type of technology are discussed.     

Performance of a double sided silicon strip detector as a transmission detector for heavy ions

The performance of a double sided silicon strip detector (DSSSD), which is used for the position and energy detection of heavy ions, is reported. The analysis shows that although the incomplete charge collection (ICC) and charge sharing (CS) effects of the DSSSD give rise to a loss of energy resolution, the position information is recorded without ambiguity. Representations of ICC/CS events in the energy spectra are shown and their origins are confirmed by correlation analysis of the spectra from both the junction side and ohmic side of the DSSSD.     

Performance of a double sided silicon strip detector as a transmission detector for heavy ions

The performance of a double sided silicon strip detector （DSSSD）, which is used for the position and energy detection of heavy ions, is reported. The analysis shows that although the incomplete charge collection （ICC） and charge sharing （CS） effects of the DSSSD give rise to a loss of energy resolution, the position information is recorded without ambiguity. Representations of ICC/CS events in the energy spectra are shown and their origins are confirmed by correlation analysis of the spectra from both the junction side and ohmic side of the DSSSD.     

Development of large-area quadrant silicon detector for charged particles

The quadrant silicon detector, a kind of passivated implanted planar silicon detector with quadrant structure on the junction side, gained its wide application in charged particle detection. In this paper, the manufacturing procedure, performance test and results of the quadrant silicon detector developed recently at the China Institute of Atomic Energy are presented. The detector is about 300 μm thick with a 48 mm×48 mm active area. The leakage current under the full depletion bias voltage of -16 V is about 2.5 nA, and the rise time is better than 160 ns. The energy resolution for a 5.157 MeV α-particle is around the level of 1%. Charge sharing effects between the neighboring quads, leading to complicated correlations between two quads, were observed when α particles illuminated on the junction side. It is explained as a result of distortion of the electric field of the inter-quad region. Such an event is only about 0.6% of all events and can be neglected in an actual application.