Defect study of proton-irradiated liquid-encapsulated Czochralski GaAs using the positron-annihilation technique

The positron lifetime of undoped Liquid-Encapsulated Czochralski (LEC)-GaAs and Si-doped (1.3×10¹⁸ cm^–3) LEC-GaAs was measured before and after irradiation with protons (dose 1×10¹⁵/cm², 15 MeV). In Si-doped GaAs, the decrease of positron lifetime at temperatures between 10 and 300 K are due to the decrease of the positron-diffusion length and the increase of the effective shallow traps such as antisite Ga_As. The annealing stage of the proton-irradiation-induced defects which show the different behavior from that of electron-irradiation-induced defects suggests that proton irradiation creates more complicated defect complexes, containing vacancies rather than isolated vacancy-type defects or simple complexes which have been observed during electron-irradiation processes. Above 700 K, proton-irradiation-induced defects such as vacancy-type defects and simple vacancy complexes are almost annealed out, while Si-induced defects such as Si_Ga-V_Ga complexes cannot be annealed out above 973 K.     

Temperature characteristics of positron trapping at defects in electron-irradiated silicon

Positron-annihilation lifetime and Doppler-broadening measurements are used to investigate defects in silicon irradiated at 373 K with 6 MeV electrons to a dose of 1×l0¹⁹e/cm². In the unirradiated silicon sample (p type) a temperature-independent behaviour of the bulk-lifetime is observed in the temperature interval 110–500 K with a constant value of 220±1 ps. The slight effect observed on the S-parameter evolution is explained taking into account the thermal expansion of the lattice. The lifetime results obtained at 80 K and at 300 K after isochronal annealing as well as the behaviour of the intensity of the second lifetime componentI ₂ during lifetime measurements below the irradiation temperature in the irradiated silicon sample (n type), clearly indicate the temperature dependent characteristics of the positron trapping cross section _t(T) T ⁿ withn= –1.905±0.016. From isochronal annealing results, an annealing stage is observed in which di-vacancies agglomerate into quadri-vacancies. The mean positron lifetime in those quadri-vacancies is 350 ps.A.B.O.S., on leave from University of Kinshasa, Zaïre     

Positron annihilation study of voids in a neutron irradiated aluminum single crystal

We have measured the lifetimes of positrons in an aluminum single crystal which was irradiated to a fast neutron fluence of 1.5·10²¹ n/cm² (>0.18 MeV) at 50°C. These irradiation conditions produced 4.2·10¹⁴ voids/cm³ with a mean diameter of 330 Å, as determined by both small-angle x-ray scattering and transmission electron microscopy. The positron lifetime spectra were resolved into three lifetime components of 100, 300, and 500 ps. The short lifetime component is a result of fast trapping of positrons by the voids; the long lifetime components result from annihilations within the voids. The intensity of the long lifetime components increases with temperature in the range 80 to 300 K and supports the model of a positron state at the void surface. The positron diffusion coefficient appears to have aT ^1/2-dependence. A magnetic quenching experiment shows no indication of positronium formation. Finally, an isochronal heat treating sequence shows that the voids anneal out between 200 and 300°C, and that the lifetime spectrum after annealing is described by a single component of 170 ps, the observed lifetime in unirradiated aluminum.     

Characterization of 3 MeV H+ irradiation induced defects in nuclear grade graphite

Atomistic structure change in a nuclear grade graphite irradiated at 353 K to 3.4×10¹⁷ ion/cm² with 3 MeV H⁺ was characterized by measuring positron lifetime and Raman spectrum at room temperature. It is evident from the positron lifetime results that the pre-existing structural defect is disoriented crystalline boundaries, and vacancy clusters ranging from di- to quadruple-vacancies were newly formed after ion irradiation. The relative intensity ratio of the Raman D and G peaks increased from 0.25 to 0.67 after ion irradiation. The concentration of radiation-induced vacancies was reasonably estimated by the Raman intensity ratio.     

Defect study on electron irradiated GaAs by means of positron annihilation

Measurements of the positron lifetime and Doppler-broadened annihilation-radiation have been performed in electron-irradiated GaAs. The positron lifetime at the irradiation induced defects was 0.250 ns at 300 K. The defect clustering stage was found to occur at around 520–620 K, and the coarsening and annealing stage is believed to be above 620 K. Similar annealing stages were also observed in GaAs lightly doped with Si (0.2×10¹⁸ cm^–3). Both the lifetime and the S-parameter in the irradiated GaAs were found to decrease with temperature from 300 K to 100 K, suggesting the coexistence of shallow traps in electron irradiated GaAs.     

Positron annihilation study of voids in a neutron irradiated aluminum single crystal

We have measured the lifetimes of positrons in an aluminum single crystal which was irradiated to a fast neutron fluence of 1.5·10²¹ n/cm² (>0.18 MeV) at 50°C. These irradiation conditions produced 4.2·10¹⁴ voids/cm³ with a mean diameter of 330 ?, as determined by both small-angle x-ray scattering and transmission electron microscopy. The positron lifetime spectra were resolved into three lifetime components of 100, 300, and 500 ps. The short lifetime component is a result of fast trapping of positrons by the voids; the long lifetime components result from annihilations within the voids. The intensity of the long lifetime components increases with temperature in the range 80 to 300 K and supports the model of a positron state at the void surface. The positron diffusion coefficient appears to have aT ^1/2-dependence. A magnetic quenching experiment shows no indication of positronium formation. Finally, an isochronal heat treating sequence shows that the voids anneal out between 200 and 300°C, and that the lifetime spectrum after annealing is described by a single component of 170 ps, the observed lifetime in unirradiated aluminum. Research sponsored in part by the U.S.Atomic Energy Commission under contract with the Union Carbide Corporation.     

Positron annihilation in Ge-S glasses

Positron lifetime and Doppler broadening measurements have been carried out on GeS_1.375 and GeS_1.5 glasses. A pronounced decrease of the mean lifetime was observed at crystallization of GeS_1.375 glass into the GeS structure. Also the Doppler-broadened curves are strongly sensitive to this solid-solid phase transition. Unlike the situation for many metals, the positron annihilation parameters were found non-sensitive to fast neutron irradiation doses as high as 10¹⁹ n/cm². No difference between positron annihilation parameters measured on GeS_1.375 and GeS_1.5 glasses was found. The state of the positron in the GeS glasses is discussed on the basis of these results. The idea is put forward, that the GeS-GeS₂ system provides possibilities of sample parameter variations that might prove useful in the understanding of the positron state in non-metallic solids.     

Positron annihilation measurements across the superconducting transition in Y1Ba2Cu3O7−x

Positron lifetime and Doppler broadened annihilation radiation lineshape measurements have been carried out in Y₁Ba₂Cu₃O_7−x as a function of temperature in the range of 300 K to 58 K. The positron lifetime and the peak parameter of the annihilation radiation lineshape are observed to decrease on lowering the temperature without showing any discontinuous change across the superconducting transition temperature of 90 K as determined by susceptibility measurements. The variation of positron annihilation parameters with temperature in the superconducting state is significantly larger than that in the normal state. This is qualitatively explained in terms of the dimerization of oxygen ions in the superconducting state of Y₁Ba₂Cu₃O_7−x .     

Effect ofV K centers on positron annihilation in KCl and Ag-doped KCl

Positron lifetime spectra have been measured at 77 K for KCl and Ag-doped KCl before and after x-irradiation at 77 K and after annealing at room temperature. Radiation at 77 K reduces the intensity of the intermediate lifetime (τ₂) component. Radiation-induced defects were monitored optically and by ESR. The experiment shows that the changes observed in the positron decay are associated with the presence ofV _K centers.     

Cu50Ti50非晶态合金的中子辐照效应

本文叙述了用X射线衍射和differential scanning calorimetry(缩写为DSC)测量两种方法对Cu₅₀Ti₅₀非晶态合金进行的快中子辐照效应研究。辐照不仅改变了该合金晶化峰的温度,而且还改变了晶化峰的形貌。在X射线衍射研究中还观察到辐照对结构所产生的影响恰与低温退火的影响相反。在这两种实验结果的基础上,讨论了Cu₅₀Ti₅₀非晶态合金的快中子辐照与原子短程结构变化的关系。 关键词：     

Positrons and electron-irradiation induced defects in the layered semiconductor InSe

The positron annihilation characteristics of the layered semiconductor InSe have been investigated. No evidence for low temperature positron trapping is found in as-grown and heavily deformed InSe. The temperature dependence of the S-parameter in these sample exhibits an increase rate in good agreement with the linear expansion coefficient along the c-axis. The positron lifetime spectra of electron-irradiated 0.01% Sn-doped InSe show a long-lifetime component of 336 ps which is tentatively attributed to positrons trapped at isolated In vacancies. Isochronal annealing experiments performed on these samples show that the recovery of the positron lifetime measured at 77K is accomplished in two stages. The first, starting after annealing at 150K, could be induced by the formation of complexes (V_In-Sn_In). The second stage, observed at temperatures T375K, is attributed to the dissociation of these complexes and subsequent annealing of the In vacancies.     

Temperature effect on positron trapping in Fe59Ni25Cr16 alloy containing voids

Positron annihilation measurements were performed in austenitic Fe₅₉Ni₂₅Cr₁₆ alloy containing vacancy-type defects. Lifetime data were recorded between 4K and 400K. The positron trapping process was studied as a function of temperature and cluster size. The smaller defects characterized by a lifetime of 260 ps yield an unchanged trapping rate during temperature scanning. However, the trapping phenomenon is strongly temperature dependent for the larger size defects, with a typical lifetime of 500 ps.     

High field magnetoresistivity of the amorphous alloy Cu50Lu50

We present the first high field magnetoresistance measurements (up to 32 T) performed on the amorphous metallic alloy Cu₅₀Lu₅₀ in the 6 to 20 K temperature range. This system is characterized by a strong spin-orbit coupling and the absence of superconductivity. Thus the straight forward interpretation of the results enable us to discuss the accuracy of the localization theoretical models in presence of high magnetic field.     

Positron lifetime and 2D-ACAR studies of divacancies in Si

We have measured positron lifetime and Two Dimensional Angular Correlation of Annihilation Radiation (2D-ACAR) distributions of Floating-Zone grown (FZ) Si specimens containing divacancies (V₂) with the definite charge states, V ₂ ⁰ , V ₂ ^–1 or V ₂ ^–2 from room temperature to about 10 K. These charge states are accomplished by an appropriate combination of dopant species, their concentration and irradiation doses of 15 MeV electrons. with reference to the currently accepted ionization level of divacancies. The positron lifetime of the negatively charged divacancy increases with temperature, while that of the neutral divacancy shows little change with temperature. The positron trapping rate, obtained from lifetime and 2D-ACAR measurements, increases markedly with decreasing temperature. This is found not only for the negative divacancies but also for the neutral divacancy. We need a model which explains this temperature dependence. The 2D-ACAR distribution from positrons trapped at divacancies shows nearly the same distribution for the different charge states, which differs considerably from the case of As vacancies in GaAs studied by Ambigapathy et al. We have observed a small but definite anisotropy in the distribution of trapped positrons in V ₂ ^– using a specimen containing oriented divacancies.Paper presented at the 132nd WE-Heraeus-Seminar on Positron Studies of Semiconductor Defects, Halle, Germany, 29 August to 2 September 1994     

Studies of divacancy in Si using positron lifetime measurement

The charge state dependence of positron lifetime and trapping at divacancy (V₂) in Si doped with phosphorus or boron has been studied after 15 McV electron irradiation up to a fluence of 8.0×10¹⁷ e/cm². The positron trapping cross sections for V ₂ ^2– , V ₂ ^– and V ₂ ⁰ at 300 K were about 6×10^–14, 3×10^–14 and 0.1–3×10^–14 cm², respectively. For V ₂ ⁺ , however, no positron trapping was observed. The marked difference in the cross sections comes from Coulomb interaction between the positron and the charged divacancy. The trapping rates for V ₂ ⁰ and V ₂ ^2– have been found to increase with decreasing temperature in the temperature range of 10–300 K. These results are well interpreted by a two-stage trapping model having shallow levels with energy of 9 meV (V ₂ ⁰ ) and 21 meV (V ₂ ^2– ). The appearance of a shallow level for V ₂ ⁰ can not be explained by a conventional Rydberg state model. The lifetime (290–300 ps) in V ₂ ⁰ is nearly constant in the temperature range from 10 to 300 K, while that in V ₂ ^2– increases from 260 ps at 10 K to 320 ps at 300 K. The lifetime (260 ps) in V ₂ ^2– is shorter than that in V ₂ ⁰ at low temperature, which is due to the excess electron density in V ₂ ^2– . At high temperature, however, the longer lifetime of V ₂ ^2– than that of V ₂ ⁰ is attributed to lattice relaxation around V ₂ ^2– .     

Detection of hydrogen in neutron-irradiated nickel using positron lifetime spectroscopy

Hydrogen in nano-voids in neutron-irradiated nickel has been detected using positron annihilation lifetime spectroscopy (PALS). As positron lifetime is greatly affected by nano-voids bound with hydrogen, special attention was paid to the analysis. The positron lifetime of neutron-irradiated nickel at higher irradiation doses increased with the dose, which is an indicator for vacancy cluster (nano-void) formation in the lattice. The introduction of hydrogen in well-annealed nickel by electrical charging also resulted in an increase in positron lifetime due to vacancy formation. In neutron-irradiated nickel specimens, hydrogen charging shortened the positron lifetime from 456 to 334 ps (irradiation dose: 3 × 10^?3 dpa). Isochronal annealing behaviour of hydrogen-charged nickel and neutron-irradiated nickel was also studied. Positron trapping rate was calculated using a simple trapping model. Thermal desorption spectroscopy was used for the investigation of hydrogen behaviour in non-irradiated hydrogen-charged nickel.     

非晶离子导体B2O3-0.7Li2O-0.7LiCl-xAl2O3晶化过程的正电子湮没寿命谱和扫描电子显微镜研究

传统的粉末压片样品严重影响了正电子湮没寿命谱及电子显微镜测量的准确性和重复性。本文克服了以上困难,制出大片非晶离子导体样品,得到了晶化过程正电子湮没寿命谱及扫描电子显微镜研究的新结果。非晶离子导体B₂O₃-0.7Li₂O-0.7LiCl-xAl₂O₃的实验结果发现:Al₂O₃组分不同对非晶态样品在室温下的正电子平均寿命无较大影响。完全晶化后,正电子平均寿 关键词：     

Helium bubbles in neutron-irradiated copper-boron studied by positron annihilation

The influence of helium, introduced by the ¹⁰B(n, α)⁷Li reaction, on the evolution of defect structure in copper containing a few hundred ppm boron has been studied by detailed positron lifetime and two-photon angular correlation measurements, supplemented by TEM studies. In the as-irradiated state of Cu-B, two lifetime components have been resolved. The shorter lifetime, τ₁, = 167 ps of 97% intensity, has been understood as due to positron trapping at small helium-vacancy complexes, while the longer lifetime τ₂ = 450 ps of 3% intensity is explained as due to helium-free voids. Marked changes in the annihilation characteristics observed at 670 K are interpreted in terms of the nucleation of microbubbles, controlled by thermally activated helium migration to vacancy traps. Corroborative evidence for the onset of helium clustering is obtained from the change in the average size of positron traps as deduced from the smearing of the measured angular correlation spectra. Helium bubbles and helium-free voids coexisting in the system have been distinguished by a three-component analysis of the lifetime spectra. Bubbles are found to be stable beyond the temperature of dissociation of voids. The size and concentration of bubbles, determined independently by TEM measurements, are in accordance with the positron annihilation results in the growth stage. The observed positron lifetime at higher annealing temperatures has been analysed by relating the annihilation rate to helium atom density and helium pressures in bubbles evaluated. These pressures are in satisfactory agreement with the estimates of equilibrium pressures, leading to the conclusion that bubble relaxation occurs by the mechanism of thermal vacancy condensation.     

Experimental and theoretical positron annihilation studies on bulk nickel silicides

Bulk nickel silicides (NiSi and NiSi₂) have been studied using the experimental positron lifetime and depth-resolved positron beam measurements. Ab-initio calculations of positron lifetime for the silicides have also been carried out using the atomic superposition method. For NiSi phase, it is found that the theoretically computed positron lifetime compares favourably with the experimentally deduced value indicating that NiSi is defect free. However, for NiSi₂, the experimental positron lifetime does not compare well with the theoretical value suggesting that NiSi₂ contains vacancy defects. This is further supported by the positron diffusion lengths deduced from the VEPFIT analysis of the positron beam results.     

HighT c superconductivity in YBa2Cu3O7−x studied by PAC and PAS

HighT _c superconductivity has been investigated in YBaCuO by both perturbed angular correlation and positron annihilation spectroscopy techniques as a function of temperature from 77 to 300 K. An abrupt change has been observed in the positron lifetime and Doppler broadening and the electric field gradient and its asymmetry parameter acrossT _c, indicating a transition of two- to one-dimensional Cu-O-Cu chain structure and a charge transfer from CuO layers to CuO chains. An anomaly of the normal state has been demonstrated around 125 K, which is attributed to the structural instability.