The study of a new n/p tunnel recombination junction and its application in a-Si：H/μc-Si：H tandem solar cells

This paper reports that a double N layer (a-Si:H/μc-Si:H) is used to substitute the single microcrystalline silicon n layer (n-μc-Si:H) in n/p tunnel recombination junction between subcells in a-Si:H/μc-Si:H tandem solar cells. The electrical transport and optical properties of these tunnel recombination junctions are investigated by current-voltage measurement and transmission measurement. The new n/p tunnel recombination junction shows a better ohmic contact. In addition, the n/p interface is exposed to the air to examine the effect of oxidation on the tunnel recombination junction performance. The open circuit voltage and FF of a-Si:H/μc-Si:H tandem solar cell are all improved and the current leakage of the subcells can be effectively prevented efficiently when the new n/p junction is implemented as tunnel recombination junction.     

Theoretical analysis on the limitations of the open-circuit voltage of a hydrogenated amorphous silicon p-i-n solar cell

We have made theoretical studies on the limitation of the open-circuit voltageV _oc of a hydrogenated amorphous silicon (a-Si:H) p-i-n type solar cell. The effects of the tail states in the a-Si:H i layer and of the interface recombination are discussed in detail. The opencircuit voltage increases when the distribution of the tail states is sharp and/or the capture cross sections of these states are small. This is because the recombination rate of photogenerated carriers and/or the density of space charge due to trapped carriers in these states become low in these conditions. These effects of the tail states on the value ofV _oc become pronounced when the built-in potential of the p-i-n junction is high. The decrease in the effective recombination velocity of carriers at the p/i and n/i interfaces results in an increase ofV _oc. This increase becomes remarkable when the effects of the tail states on the value ofV _oc are small. Both the sharp distribution of tail states and the small value of the interface recombination velocity are necessary to increase considerably the value ofV _oc. We show the conditions of the material parameters necessary to obtain an open-circuit voltage of 1.0 V.     

Understanding of a-Si:H(p)/c-Si(n) heterojunction solar cell through analysis of cells with point-contacted p/n junction

We fabricated point-contacted a-Si:H(p)/c-Si(n) heterojunction solar cells using patterned SiO₂ and investigated their electrical properties using the light current–voltage (I–V) curve and Suns-V_oc measurements. The light I–V curves showed bias-dependent changes according to the applied voltage in the point-contacted cells, especially in the samples with a long distance between the point-contacted junctions. The Suns-V_oc measurements showed that the bias-dependence of the light I–V curves did not originate from the recombination in the SiO₂/Si or a-Si:H(p)/c-Si(n) interface, but from the series resistances. It is possible to explain the bias-dependent light I–V curve in terms of the conductivity of a-Si:H(p) and difference in the electrical contact properties between a-Si:H(p), ZnO and c-Si(n). These results mean that the electrical properties of the a-Si:H(p) layer and the contact properties with this layer are also critical to obtain a high J_sc and fill factor in n-type based Si heterojunction solar cells.     

Superstrate p-i-n a-Si:H solar cells on textured ZnO:Al front transparent conduction oxide

Superstrate p-i-n amorphous silicon thin-film (a-Si:H) solar cells are prepared on SnO₂:F and ZnO:Al transparent conducting oxides (TCOs) in order to see the effect of TCO/p-layers on a-Si:H solar cell operation. The solar cells prepared on textured ZnO:Al have higher open circuit voltage V_oc than cells prepared on SnO₂:F. The presence of a thin microcrystalline p-type silicon layer (μc-Si:H) between ZnO:Al and p a-SiC:H plays a major role by causing an improvement in the fill factor as well as in V_oc of a-Si:H solar cells prepared on ZnO:Al TCO. Without any treatment of the p-i interface, we could obtain a high V_oc of 994 mV while keeping the fill factor (72.7%) and short circuit current density J_sc at the same level as for the cells on SnO₂:F TCO. This high V_oc value can be attributed to modification in the current transport in this region due to creation of a potential barrier.     

非晶/微晶相变域硅薄膜及其太阳能电池

采用甚高频等离子体增强化学气相沉积（VHF-PECVD）法，成功制备出从非晶到微晶过渡区 域的硅薄膜. 样品的微结构、光电特性及光致变化的测量结果表明这些处于相变域的硅薄膜 兼具非晶硅优良的光电性质和微晶硅的稳定性. 用这种两相结构的材料作为本征层制备了p- i-n太阳能电池，并测量了其稳定性. 结果在AM15(100mW/cm²) 的光强下曝光 800—5000min后，开路电压略有升高，转换效率仅衰退了29%. 关键词： 相变域硅薄膜 光电特性 太阳能电池     

Excellent passivation of thin silicon wafers by HF‐free hydrogen plasma etching using an industrial ICPECVD tool

In this work, hydrogen plasma etching of surface oxides was successfully accomplished on thin (～100 µm) planar n‐type Czochralski silicon wafers prior to intrinsic hydrogenated amorphous silicon [a‐Si:H(i)] deposition for heterojunction solar cells, using an industrial inductively coupled plasma‐enhanced chemical vapour deposition (ICPECVD) platform. The plasma etching process is intended as a dry alternative to the conventional wet‐chemical hydrofluoric acid (HF) dip for solar cell processing. After symmetrical deposition of an a‐Si:H(i) passivation layer, high effective carrier lifetimes of up to 3.7 ms are obtained, which are equivalent to effective surface recombination velocities of 1.3 cm s^–1 and an implied open‐circuit voltage (V_oc) of 741 mV. The passivation quality is excellent and comparable to other high quality a‐Si:H(i) passivation. High‐resolution transmission electron microscopy shows evidence of plasma‐silicon interactions and a sub‐nanometre interfacial layer. Using electron energy‐loss spectroscopy, this layer is further investigated and confirmed to be hydrogenated suboxide layers. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

渐变带隙氢化非晶硅锗薄膜太阳能电池的优化设计

利用一维微电子-光电子结构分析软件(AMPS-1D)在AM1.5G(100 mW/cm2)、室温条件下模拟和比较了有、无渐变带隙氢化非晶硅锗(a-SiGe:H)薄膜太阳能电池的各项性能.计算结果表明:渐变带隙结构电池具有较高的开路电压(V oc)和较好的填充因子(FF),转换效率(E ff)比非渐变带隙电池提高了0.477%.研究了氢化非晶硅(a-Si:H)、氢化非晶碳化硅(a-SiC:H)和氢化纳米晶硅(nc-Si:H)三种不同材料的窗口层对a-SiGe:H薄膜太阳能电池性能的影响.结果显示:在以nc-Si:H为窗口层的电池能带中,费米能级E F已经进入价带,使得窗口层电导率及电池开路电压有所提高,又由于ITO与p-nc-Si:H的接触势垒较低,使得接触处的电场降低,更有利于载流子的收集.另一方面,窗口层与a-SiGe:H薄膜之间存在较大的带隙差,在p/i界面由于能带补偿作用形成了价带势垒(带阶)?E v,阻碍了空穴的迁移,因此我们在p/i界面引入缓冲层,使得能带补偿作用得到释放,更有利于空穴的迁移和收集,得到优化后单结渐变带隙a-SiGe:H薄膜结构太阳能电池的转换效率达到了9.104%.     

非晶硅界面缓冲层对非晶硅锗电池性能的影响

针对非晶硅锗电池本征层高锗含量时界面带隙失配以及高界面缺陷密度造成电池开路电压和填充因子下降的问题,通过在PI界面插入具有合适带隙的非晶硅缓冲层,不仅有效缓和了带隙失配,降低界面复合,同时也通过降低界面缺陷密度改善内建电场分布,从而提高了电池的收集效率. 进一步引入IN界面缓冲层以及对非晶硅锗本征层进行能带梯度设计,在仅采用Al背电极时,单结非晶硅锗电池转换效率达8.72%. 关键词： 非晶硅缓冲层 非晶硅锗薄膜太阳电池 带隙 界面     

Effect of p-μc-Si1−xOx:H layer on performance of hetero-junction microcrystalline silicon solar cells under light concentration

Preparation of p-type hydrogenated microcrystalline silicon oxide thin films (p-μc-Si_1−xO_x:H) by 13.56 MHz RF-PECVD method for use as a p-layer of hetero-junction μc-Si:H solar cells is presented. We investigated effects of wide-gap p-μc-Si_1−xO_x:H layer on the performance of hetero-junction μc-Si:H solar cells under various light intensity. We observed that a wide-gap p-μc-Si_1−xO_x:H was effective in improving the open-circuit voltage (V_oc) of the solar cells. We also confirmed that the V_oc logarithmically increased with increasing light intensity, and the enhancement of V_oc became larger with increasing band gap of p-layer. These results indicate that wide-gap p-μc-Si_1−xO_x:H is a promising material for use as window layer in hetero-junction μc-Si:H solar cells.     

Tuning of the open‐circuit voltage by wide band‐gap absorber and doped layers in thin film silicon solar cells

We present an experimental study combined with computer simulations on the effects of wide band‐gap absorber and window layers on the open‐circuit voltage (V_oc) in single junction thin film silicon solar cells. The quantity ΔE_p, taking as the difference between the band gap and the activation energy in ?p? layer, is treated as a measure of the p‐layer properties and shows a linear relation with V_oc over a range of 100 mV with a positive slope of around 430 mV/eV. Two limiting mechanisms of V_oc are identified: the built‐in potential at lower ΔE_p and the band gap of the absorber layer at higher ΔE_p. The results of the experimental findings are confirmed by computer simulations. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Contact passivation in silicon solar cells using atomic‐layer‐deposited aluminum oxide layers

Atomic‐layer‐deposited aluminum oxide (AlO_x) layers are implemented between the phosphorous‐diffused n⁺‐emitter and the Al contact of passivated emitter and rear silicon solar cells. The increase in open‐circuit voltage V_oc of 12 mV for solar cells with the Al/AlO_x/n⁺‐Si tunnel contact compared to contacts without AlO_x layer indicates contact passivation by the implemented AlO_x. For the optimal AlO_x layer thickness of 0.24 nm we achieve an independently confirmed energy conversion efficiency of 21.7% and a V_oc of 673 mV. For AlO_x thicknesses larger than 0.24 nm the tunnel probability decreases, resulting in a larger series resistance. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Surface passivation schemes for high‐efficiency n‐type Si solar cells

An effective passivation on the front side boron emitter is essential to utilize the full potential of solar cells fabricated on n‐type silicon. However, recent investigations have shown that it is more difficult to achieve a low surface recombination velocity on highly doped p‐type silicon than on n‐type silicon. Thus, the approach presented in this paper is to overcompensate the surface of the deep boron emitter locally by a shallow phosphorus diffusion. This inversion from p‐type to n‐type surface allows the use of standard technologies which are used for passivation of highly doped n‐type surfaces. Emitter saturation current densities (J_0e) of 49 fA/cm² have been reached with this approach on SiO₂ passivated lifetime samples. On solar cells a certified conversion efficiency of 21.7% with an open‐circuit voltage (V_oc) of 676 mV was achieved. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Efficient interdigitated back‐contacted silicon heterojunction solar cells

We present back‐contacted amorphous/crystalline silicon heterojunction solar cells (IBC‐SHJ) on n‐type substrates with fill factors exceeding 78% and high current densities, the latter enabled by a SiN_x /SiO₂ passivated phosphorus‐diffused front surface field. V_oc calculations based on carrier lifetime data of reference samples indicate that for the IBC architecture and the given amorphous silicon layer qualities an emitter buffer layer is crucial to reach a high V_oc, as known for both‐side contacted silicon heterojunction solar cells. A back surface field buffer layer has a minor influence. We observe a boost in solar cell V_oc of 40 mV and a simultaneous fill factor reduction introducing the buffer layer. The aperture‐area efficiency increases from 19.8 ± 0.4% to 20.2 ± 0.4%. Both, efficiencies and fill factors constitute a significant improvement over previously reported values. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Silicon heterojunction solar cell with amorphous silicon oxide buffer and microcrystalline silicon oxide contact layers

This Letter reports on the fabrication and characterization of silicon heterojunction solar cells with silicon oxide based buffer (intrinsic amorphous silicon oxide) and contact layers (doped microcrystalline silicon oxide) on flat p‐type wafers. The critical dependency of the cell performance on the front and rear buffer layer thickness reveals a trade‐off between the open circuit voltage V_oc and the fill factor FF. At the optimum, the highest efficiency of 18.5% (active area = 0.67 cm²) was achieved with V_oc = 664 mV, short circuit current J_sc = 35.7 mA/cm² and FF = 78.0%. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Amorphous thin-film solar cells

This report gives an overview of the present status of thin-film solar cells made from hydrogenated amorphous semiconductors (a-Si:H, a-Ge:H) together with new results emphasizing the physics of amorphous materials and devices. Preparation techniques, quality and performances of a-Si:H and a-Ge:H films as well as solar cells with pin structures are reviewed. Dark and light current-voltage I(V) characteristics and spectral response measurements give information about photovoltaic diodes and allow further insights into the physics of these kinds of materials and solar cells. Simulation calculations and device modelling of such solar cells have increased our understanding of amorphous semiconductors and their devices. The introduction of pin/pin stacked and/or tandem structures has improved the long-term stability and conversion efficiency of amorphous solar cells.Dedicated to H.-J. Queisser on the occasion of his 60th birthday     

硅异质结太阳电池的物理机制和优化设计

硅异质结太阳电池是一种由非晶硅薄膜层沉积于晶硅吸收层构成的高效低成本的光伏器件,是一种具有大面积规模化生产潜力的光伏产品.异质结界面钝化品质、发射极的掺杂浓度和厚度以及透明导电层的功函数是影响硅异质结太阳电池性能的主要因素.针对这些影响因素已经有大量的研究工作在全世界范围内展开,并且有诸多研究小组提出了器件效率限制因素背后的物理机制.洞悉物理机制可为今后优化设计高性能的器件提供准则.因此及时总结硅异质结太阳电池的物理机制和优化设计非常必要.本文主要讨论了晶硅表面钝化、发射极掺杂层和透明导电层之间的功函数失配以及由此形成的肖特基势垒;讨论了屏蔽由功函数失配引起的能带弯曲所需的特征长度,即屏蔽长度;介绍了硅异质结太阳电池优化设计的数值模拟和实践;总结了硅异质结太阳电池的研究现状和发展前景.     

19.4%‐efficient large‐area fully screen‐printed silicon solar cells

We demonstrate industrially feasible large‐area solar cells with passivated homogeneous emitter and rear achieving energy conversion efficiencies of up to 19.4% on 125 × 125 mm² p‐type 2–3 Ω cm boron‐doped Czochralski silicon wafers. Front and rear metal contacts are fabricated by screen‐printing of silver and aluminum paste and firing in a conventional belt furnace. We implement two different dielectric rear surface passivation stacks: (i) a thermally grown silicon dioxide/silicon nitride stack and (ii) an atomic‐layer‐deposited aluminum oxide/silicon nitride stack. The dielectrics at the rear result in a decreased surface recombination velocity of S_rear = 70 cm/s and 80 cm/s, and an increased internal IR reflectance of up to 91% corresponding to an improved J_sc of up to 38.9 mA/cm² and V_oc of up to 664 mV. We observe an increase in cell efficiency of 0.8% absolute for the cells compared to 18.6% efficient reference solar cells featuring a full‐area aluminum back surface field. To our knowledge, the energy conversion efficiency of 19.4% is the best value reported so far for large area screen‐printed solar cells. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

钙钛矿/硅叠层太阳电池中平面a-Si:H/c-Si异质结底电池的钝化优化及性能提高

最近,旋涂法制备的钙钛矿/平面硅异质结高效叠层太阳电池引起人们广泛关注,主要原因是相比于绒面硅衬底制备的钙钛矿/硅叠层太阳电池,其制备工艺简单、制备成本低且效率高.对于平面a-Si:H/c-Si异质结电池, a-Si:H/c-Si界面的良好钝化是获得高转换效率的关键,进而决定了钙钛矿/硅异质结叠层太阳电池的性能.本文主要从硅片表面处理、a-Si:H钝化层和P型发射极等方面展开研究,通过对硅片表面的氢氟酸(HF)浸泡时间和氢等离子体预处理气体流量、a-Si:H钝化层沉积参数、钝化层与P型发射极(I/P)界面富氢等离子体处理的综合调控,获得了相应的优化工艺参数.对比研究了p-a-Si:H和p-nc-Si:H两种缓冲层材料对I/P界面的影响,其中高电导、宽带隙的p-nc-Si:H缓冲层既能够降低I/P界面的缺陷态,又可以增强P型发射层的暗电导率,提高了前表面场效应钝化效果.通过上述优化,制备出最佳的P-type emitter layer/aSi:H(i)/c-Si/a-Si:H(i)/N-type layer (inip)结构样品的少子寿命与implied-Voc分别达到2855μs和709 mV,表现出良好的钝化效果.应用于平面a-Si:H/c-Si异质结太阳电池,转换效率达到18.76%,其中开路电压达到681.5 mV,相对于未优化的电池提升了34.3 mV.将上述平面a-Si:H/c-Si异质结太阳电池作为底电池,对应的钙钛矿/硅异质结叠层太阳电池的开路电压达到1780 mV,转换效率达到21.24%,证明了上述工艺优化能够有效地改善叠层太阳电池中的硅异质结底电池的钝化及电池性能.     

超薄高速率单结微晶硅薄膜电池及其叠层电池

采用甚高频等离子体增强化学气相沉积技术, 基于优化表面形貌及光电特性的溅射后腐蚀ZnO:Al衬底, 将通过调控工艺参数获得的器件质量级高速微晶硅(μupc-Si:H )材料(沉积速率达10.57 Å/s)应用到微晶硅单结电池中, 获得了初始效率达7.49%的高速率超薄微晶硅单结太阳电池(本征层厚度为1.1 μm). 并提出插入n型微晶硅和p型微晶硅的隧穿复合结, 实现了非晶硅顶电池和微晶硅底电池之间的低损电连接, 由此获得了初始效率高达12.03% (V_oc=1.48 eV, J_sc=11.67 mA/cm², FF=69.59%)的非晶硅/微晶硅超薄双结叠层电池(总厚度为1.48 μm), 为实现低成本生产太阳电池奠定了基础.     

Ion implantation into amorphous Si layers to form carrier‐selective contacts for Si solar cells

This paper reports our findings on the boron and phosphorus doping of very thin amorphous silicon layers by low energy ion implantation. These doped layers are implemented into a so‐called tunnel oxide passivated contact structure for Si solar cells. They act as carrier‐selective contacts and, thereby, lead to a significant reduction of the cell's recombination current. In this paper we address the influence of ion energy and ion dose in conjunction with the obligatory high‐temperature anneal needed for the realization of the passivation quality of the carrier‐selective contacts. The good results on the phosphorus‐doped (implied V_oc = 725 mV) and boron‐doped passivated contacts (iV_oc = 694 mV) open a promising route to a simplified interdigitated back contact (IBC) solar cell featuring passivated contacts. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)