Ab Initio Study of Electric Transport and Interlayer Exchange Coupling in Fe-Si-Fe Systems

We present a first principles study of the magnetoresistance (MR) perpendicular to the planes of atoms and the interlayer exchange coupling (IEC) in Fe-Si-Fe trilayers. In both cases the dependence on the number of spacer layers is investigated, whereby the spacer thickness ranges between 3 and 21 Å for the IEC and extends to 33 Å for the MR in order to obtain the asymptotic behavior. Additionally, the influence of alloy formation at the interfaces on the MR and the IEC is examined. The calculations of the electronic structure are performed within the fully relativistic spin-polarized screened Korringa-Kohn-Rostoker method and the transport properties are derived from the Kubo-Greenwood equation. Our results give evidence that inter-diffusion is one of the origins of the small MR, which is observed experimentally in Fe/Si/Fe trilayers. AFM coupling occurs for spacers thicker than 4 Å which is in accordance with the experimental findings. It seems that interdiffusion stabilizes AFM coupling in Fe-Si-Fe trilayers.     

MAGNETIC POLARIZATION OF Pd SPACERS AND OSCILLATORY EXCHANGE COUPLING BETWEEN Fe AND Pd LAYERS IN Fe/Pd MULTILAYERS

Ay oscillatory behavior in specific saturation magnetization of Fe/Pd multilayers is observed. The conversion electron M?ssbauer spectroscopy and other experiments indicate that this behavior is caused by the magnetic polarization of Pd spacers, which alternates between positive and negative polarization with respect to the magnetic moments of Fe layers. The interlayer coupling between two Fe layers always keeps ferromagnetic. Then, the interlayer couplings in ferromagnetic metal/nearly ferromagnetic metal multilayers were calculated By using the model of Barnas. The results of calculation prove that the above phenomenon might appear under some condition. The influence of magnetic polarization potential of spacers and interface chemical potential on the interlayer couplings is also discussed.     

[Fe/Cr]多层膜及掺入Si中介层后的层间耦合和磁电阻效应

用真空蒸镀方法制备了［Ｆｅ／Ｃｒ］，［Ｆｅ／Ｃｒ／Ｓｉ］和［Ｆｅ／Ｓｉ］多层膜．研究了Ｃｒ层、Ｓｉ层和Ｃｒ＋Ｓｉ层厚度变化对层间耦合和磁电阻的影响．Ｆｅ层厚为２ｎｍ，Ｃｒ层厚度变化存在耦合振荡和巨磁电阻及其振荡．磁电阻值为１４.６％（４.２Ｋ）．在Ｃｒ层中加入一半Ｓｉ层或全部由Ｓｉ层替代，振荡消失，磁电阻减小到千分之几．根据掺Ｓｉ层后多层膜的电阻率变化，认为Ｓｉ加入使非磁层中自由电子数减少，随之极化效应也变弱，导致振荡消失，磁电阻大为降低 关键词：     

Fe/Si多层膜的层间耦合与界面扩散

对以本征Si及重掺杂ｐ型和ｎ型Si作为中间层的Fe/Si多层膜的层间耦合进行研究，并通过退火，增大Fe，Si之间的扩散，分析界面扩散对层间耦合的影响. 实验结果表明，层状结构良好的制备态的多层膜，Fe，Si之间也存在一定程度的扩散，它是影响层间耦合的 主要因素，远远超过了半导体意义上的重掺杂，使不同种类的Si作为中间层的层间耦合基本 一致.进一步还发现，在一定范围内增大Fe，Si之间的扩散，即使多层膜的层状结构已经有了相当的退化，Fe/Si多层膜的反铁磁耦合强度基本保持不变. 关键词： Fe/Si多层膜 层间耦合 界面扩散     

Correlation between impurities in Fe-Si amorphous layers synthesized by Fe implantation and photoluminescence property of β-FeSi2 precipitates in Si

Completely amorphous Fe-Si layers are formed by Fe implantation into Si substrate at a dosage of 5×10¹⁵ cm⁻² using a metal vapor vacuum arc (MEVVA) ion source under 80 kV extraction voltage and cryogenic temperature. After thermal annealing, β-FeSi₂ precipitates are formed in Si matrix. The influence of impurities in these amorphous Fe-Si layers on the photoluminescence (PL) from β-FeSi₂ precipitates is investigated. PL is found to be significantly enhanced by optimizing the impurity concentration and annealing scheme. After 60 s of rapid thermal annealing (RTA) at 900 °C, β-FeSi₂ precipitates in medium boron-doped Si substrate give the strongest PL intensity without boron out-diffusion from them.     

Structure and interlayer coupling in Co/V multilayers

Two series of sputtered Co/V multilayers were investigated by X-ray diffraction, ferromagnetic resonance (FMR) and magnetic measurements. The multilayers are found severely alloyed, resulting in two FMR peaks of uniform mode. Spin-wave resonance (SWR) spectra were observed when the thickness of vanadium is thin, indicating interlayer coupling. The data of SWR were treated approximately respectively by volume inhomogeneity (VI) and volume homogeneity and entire surface pinning (SP) models. The relatively small calculated effective exchange constants showed weak exchange coupling between Co layers across V spacers.     

Surface modification of exchange-coupled Co/NiOx magnetic bilayer by bias sputtering

We have investigated the effect of bias voltage on sheet resistance, surface roughness and surface coverage of Co/NiO_x magnetic bilayer. In addition, interface topography and corrosion resistance of the Ta/Co/Cu/Co/NiO_x/Si(1 0 0) system have been studied for Co layers deposited at an optimum bias voltage. Atomic force microscopy (AFM) and four point probe sheet resistance (R_s) measurement have been used to determine surface and electrical properties of the sputtered Co layer at different bias voltages ranging from 0 to −80 V. The Co/NiO_x bilayer exhibits a minimum surface roughness and low sheet resistance value with a maximum surface coverage at V_b=−60 V resulted in a slight increase of magnetic resistance and its sensitivity for the Co/Cu/Co/NiO_x/Si(1 0 0) magnetic multilayers, as compared with the same magnetic multilayers containing unbiased Co layers. The presence of Ta protection layer improves the corrosion resistance of the multilayers by three orders of magnitude in a humid environment.     

Interaction of iron atoms with the Si(100)-2 × 1 surface

Interaction of iron atoms with the Si(100)-2 × 1 surface at room temperature is studied by core-level photoelectron spectroscopy using synchrotron radiation for Fe coverages ranging from a fraction of a monolayer to six monolayers. It is shown that the Fe/Si(100)-2 × 1 interface is chemically active: the Fe-Si solid solution forms early in deposition of iron on silicon. When the Fe coverage reaches four to five monolayers, the state of the system is changed and Fe₃Si silicide arises.     

Structural and Magnetic Properties of [Fe/Ni]N Multilayers

[Fe/Ni]N multilayered structure grows epitaxially on the single crystalline MgO substrate. Due to the different directions of magnetic easy axes of Fe and Ni and the strong strain, large anisotropy dispersion is assumed. According to the layer model, the magnetization of Fe and Ni layers cannot follow each easy axis because of exchange coupling, and then the anisotropies are averaged out. The reduction of the effective anisotropy enhances with the decrease of periodic thickness. Thus, the coercivity of [Fe/Ni]N multilayers reduces with decreasing periodic thickness.     

Magnetic and electric properties of (Fe,Co)/(Si,Ge) multilayers

We review selected results concerning the interlayer exchange coupling in Fe/Si _x Fe_1−x , Fe/Ge and Co/Si layered structures. Among the ferromagnet/semiconductor systems, Fe/Si structures are the most popular owing to their strong antiferromagnetic interlayer coupling. We show that such interaction depends not only on semiconducting sublayer thickness, but also on deposition techniques and on the chemical composition of the sublayer as well. In similar heterostructures e.g. Fe/Ge, antiferromagnetic coupling was observed only in ion-beam deposited trilayers at low temperatures. In contrast, in Fe/Ge multilayers deposited by sputtering, no such coupling was found. However, when the Ge is partially substituted by Si, antiferromagnetic interlayer coupling appears. For Co/Si multilayers, we observed a very weak exchange coupling and its oscillatory behavior. The growth of Co on Si occurs in an island growth mode. The evolution of magnetic loop shapes can be successfully explained by the interplay between interlayer coupling and anisotropy terms.     

Short period magnetic coupling oscillations in Co/Si multilayers: Theory versus experiment

Today the magnetic properties of multilayers and nanostructures including a metal or an insulator as a nonmagnetic spacer layer are rather well understood. But they are much more controversial for semiconductor spacers. For instance, for Co/Si multilayers short period coupling oscillations are predicted by ab initio computations but have yet to be observed. Here we show in Co/Si multilayers prepared at low temperature (90 K) strong saturation field oscillations that are consistent with the predicted coupling oscillations. However, the decay length of the oscillations is much longer than the expected one and cannot be explained within the framework of available theories.     

Mössbauer study of magnetic Fe/FeSi multilayers

Many useful properties of magnetic multilayers depend on the coupling between the ferromagnetic layers. The coupling often oscillates with the thickness of non-magnetic spacer layers: it is ferro- or antiferromagnetic or even non-collinear near a critical thickness. We investigated the magnetron-sputtered Fe/FeSi multilayers with spacer thickness around 1.7 nm by means of Conversion Electron Mössbauer Spectroscopy with oblique incidence of the γ beam in order to gain information on the orientation of the local magnetic moments in the multilayer plane. The results show that the local moments make an angle of 45°–50° with the direction of the remanent magnetization. This is consistent with strong biquadratic coupling which in turn is expected at this spacer thickness from our magnetic measurements. An analysis of the distribution ofB _hf corresponding to different numbers of n.n. Si atoms in the bcc Fe structure points to weak diffusion of Si through the Fe/FeSi interface characterized by a diffusion length of about twice the substrate roughness.     

Influence of the thermal power of a Fe atomic flux on the formation of Cu/Fe nanofilms on a Si(001) substrate

The growth of a Fe sublayer 1.5–14.0 monolayers (MLs) thick and a Cu film (about 5 MLs) on this sublayer is studied at a reduced temperature (1240°C) and an elevated temperature (1400°C) of a Fe source and at a reduced temperature (900°C) of a Cu source. The films are examined by Auger electron spectroscopy, low-energy electron diffraction, and atomic force microscopy. As metal sources, thin Fe and Cu strips on a Ta foil are used. It is shown that a nonequilibrium 2D phase forms in the Fe-on-Si(001) film up to a thickness of 4–5 MLs. This phase appears as closely packed atomically smooth nanoislands. When the thickness of the film exceeds 4–5 MLs, the nonequilibrium Fe phase changes to the bulk (3D) phase of Fe and its silicide Fe _x Si. At Fe source temperatures of 1240 and 1400°C, the nonequilibrium phase consists of Fe with Si segregated on the Fe surface, and a Fe-Si mixture. Copper on the nonequilibrium Fe and Fe-Si phases grows, respectively, as a smooth layer Cu with Si segregated on the top and in the form of Cu-Fe and Cu-Si mixtures. Cu islands growing on the bulk Fe and Fe _x Si phases have smaller and larger sizes, respectively.     

Processes of silicide formation in the Fe/Si(111)7 × 7 system

The initial stages of the formation of iron silicides in the Fe/Si(111)7 × 7 system in the course of solid-phase epitaxy are investigated using high-resolution photoelectron spectroscopy (～100 meV) with synchrotron radiation. The spectra of the Si 2p core and valence-band electrons obtained after deposition of iron coverages of up to 28 monolayers on the surface of the sample and subsequent isochronous annealings at 650°C are measured and analyzed. It is shown that the first to form under Fe deposition is an ultrathin film of the metastable silicide FeSi with a CsCl-type structure, on which a layer of the Fe-Si solid solution with segregated silicon grows. At coverages in excess of 10 monolayers, an iron film grows on the surface of the sample. Annealing of a silicon crystal coated with a Fe layer leads to the sequential formation of two stable silicide phases, namely, the ?-FeSi and β-FeSi₂ phases, in the near-surface region of the sample. It is found that the process of solid-phase synthesis of the ?-FeSi phase passes through the stage of transformation of the iron film into the Fe-Si solid solution.     

Mössbauer-Effect Study of Metastable c-FeSi Synthesized by Molecular Beam Epitaxy (MBE) and by Ion Implantation

Conversion electron Mössbauer spectroscopy (CEMS) has been applied to the study of the metastable c-FeSi phase (i.e. an iron silicide with CsCl lattice structure) that was synthesized by implantation of Si + ions of 50 keV in energy into f -Fe (95% 57 Fe) near room temperature with a nominal dose of 5 2 10 17 cm m 2 , and by molecular beam epitaxy (MBE). Iron silicide layers with different stoichiometry (FeSi 0.85 , FeSi, Fe 0.85 Si) were grown by codeposition of 57 Fe and Si onto an Fe buffer layer on MgO(100). For all FeSi layers the defective CsCl structure was observed after annealing at different temperatures. X-ray diffraction measurements were performed to determine the structure and epitaxial relationship of the c-FeSi films. The lattice parameter perpendicular to the film plane was found to be 2.77(5) Å. CEMS measurements revealed a lower than cubic site symmetry of the iron atoms for both the c-FeSi layers synthesized by ion implantation and by MBE. The formation of nearly undistorted c-FeSi after annealing is favored by excess Fe atoms in the deposited film.     

溅射制备的Co/V多层膜微观结构特征与铁磁共振研究

研究了用射频磁控溅射方法制备的［Co(1.5nm)/V(d_V)］₂₀(0.5nm≤d_V≤4nm)多层膜的结构和磁性.用X射线衍射、透射电子显微镜、高分辨率透射电子显微镜等手段对其结构的分析,表明它们层状周期结构良好,沿膜的生长方向具有fcc Co(111)和bcc V(110)织构,且是由小的柱状晶粒构成的多晶薄膜.界面一定程度的合金化,使其成为成分调制周期结构,也是它们的一个结构特征.由其铁磁共振谱计算得到较小的g因子和4πM_{e 关键词：}     

Oscillatory ferromagnetic interlayer coupling in [Pt(5 Å)/Co(4 Å)]3/Cr(x Å)/[Co(4 Å)/Pt(12 Å)]3 multilayers with perpendicular anisotropy

Investigation has been performed on the interlayer coupling between two Co/Pt multilayers with perpendicular anisotropy separated by Cr spacers. As a function of the Cr spacer thickness, only ferromagnetic interlayer coupling has been observed between the two Co/Pt multilayers in contrast to the oscillatory interlayer coupling between ferromagnetic and antiferromagnetic observed in ferromagnetic layers with in-plane anisotropy separated by Cr spacers. It is the strength of the ferromagnetic interlayer coupling that has been observed to be oscillatory as a function of the Cr spacer thickness with a period of about 7 Å.     

Normal-incidence silicon-gadolinium multilayers for imaging at 63 nm wavelength

Si/Gd multilayers designed as narrowband reflective coatings near 63 nm were developed. The highest peak reflectance of 26.2% at a 5 degrees incident angle was obtained at 62 nm, and the spectral bandwidth was 7.3 nm FWHM. The fits for x-ray and extreme ultraviolet reflectance data of Si/Gd multilayers indicate the possibility of silicide formation at the Si-Gd interfaces. B(4)C, W, and SiN were deposited as interface barrier layers to improve the reflectance of Si/Gd multilayers. More than an 8% increase in reflectance was observed from the interface-engineered Si/W/Gd and Si/B(4)C/Gd multilayers.     

Structure analysis of thin iron-silicide film from φ-scan RHEED Patterson function

The atomic structure of thin iron silicide film, grown epitaxially on the Si(111) surface, has been analyzed by means of the three-dimensional RHEED Patterson function analysis. The iron-silicide-terminated surface with (2 × 2) periodicity has been prepared by a solid-phase epitaxy method. 2 ML of Fe were deposited on the Si(111)-(7 × 7) surface and annealed at 500°C. Three-dimensional Patterson function was calculated from series of φ-scanned RHEED intensity distributions converted to the k-space. The resulting model of γ-FeSi₂ structure consists of two silicide layers faulted to each other with three relaxed Si adatoms above the H₃ site.     

Processing of W/Si and Si/W bilayers and multilayers with single and multiple excimer-laser pulses

Interdiffusion phenomena, thermal damage and ablation of W/Si and Si/W bilayers and multilayers under XeCl-excimer laser (=308 nm) irradiation at fluences of 0.15, 0.3 and 0.6 J/cm² were studied. Samples were prepared by UHV e-beam evaporation onto oxidized Si. The thickness of W and Si layers and the total thickness of the structures were 1–20 nm and 40–100 nm, respectively. 1 to 300 laser pulses were directed to the same irradiation site. At 0.6 J/cm² the samples were damaged even by a single laser pulse. At 0.3 J/cm² WSi₂ silicide formation, surface roughening and ablation were observed. The threshold for significant changes depends on the number of pulses: it was between 3–10 pulses and 10–30 pulses for bilayers with W and Si surfaces, respectively, and more than 100 pulses for multilayers with the same total thickness of tungsten. At 0.15 J/cm² the periodicity of the multilayers was preserved. Temperature profiles in layered structures were obtained by numerical simulations. The observed differences of the resistance of various bilayers and multilayers against UV irradiation are discussed.