Spectral dependence of photoinduced optical absorption in doped yttrium iron garnet single crystals

The photoinduced optical absorption α of doped yttrium iron garnets (YIG) is investigated. It is found that the optical absorption α at a wavelength of 1.1 μm depends on the wavelength of irradiating light in the range 0.6–1.9 μm. It is demonstrated that, in the Y₃Fe₅O₁₂ crystal with an acceptor Ba impurity, the photoinduced increase in α is due to the formation of Fe⁴⁺ ions in octahedral sites. The charge transfer occurs through photoexcitation of the ⁶ A _1g (⁶ S) → ⁴ T _1g (⁴ G) and ⁶ A _1g (⁶ S) → ⁴ T _2g (⁴ G) transitions of octahedral Fe³⁺ ions. In the crystal with a donor Si impurity, the increase in α is caused by the formation of Fe²⁺ ions upon photoionization of silicon. __________ Translated from Fizika Tverdogo Tela, Vol. 43, No. 7, 2001, pp. 1233–1235. Original Russian Text Copyright ? 2001 by Doroshenko, Nadezhdin.     

Site occupancy of ferrous ions in iron garnets

Fe²⁺ site occupancy in iron garnets is investigated by means of optical absorption and magnetic circular dichroism. In particular measurements are carried out on bulk single crystals of yttrium iron garnet (YIG) doped with Si⁴⁺, Nb⁵⁺, Sn⁴⁺, Zr⁴⁺, Ti⁴⁺ and Th⁴⁺. The results are discussed in the light of the recent discovery of tetrahedral Fe²⁺ in Nb-doped YIG. We find that, in general, Fe²⁺ occupies both octahedral and tetrahedral sites, the actual distribution being related to site occupancy of the donor centers. This correlation may be relaxed by photoinduced charge transfer between iron sites, at low temperatures. Contrary to recent attributions, no dodecahedral component is found in the infrared spectra above 1 μm wavelength.     

Growth and characterization of cerium-substituted yttrium iron garnet single crystals for magneto-optical applications

This paper is concerned with the preparation and characterization of cerium-substituted yttrium iron garnets, which are known to be oxides having a large Faraday rotation effect. Using the improved flux method we successfully grew bulk single crystals of iron garnet doped with Ce³⁺ ions with maximum substitutions up to 0.349. Here we investigate different solution compositions for maximum Ce³⁺ substitution. The Faraday rotation and optical absorption spectra were measured in the near infrared region for different Ce³⁺ ion substituted iron garnets. The specific Faraday rotation of Ce_0.349Eu_0.195Y_2.456Fe₅O₁₂ was found to be 1430 deg/cm at a wavelength of 780 nm and –1280 deg/cm at 1150 nm. The Ce substitution prominently enhances the Faraday rotation effect, and Yb³⁺ and Eu³⁺ ions substituted for Y³⁺ in the dodecahedral sites of YIG can increase the concentration of Ce³⁺ ions, depressing the formation of nonmagnetic Ce⁴⁺ ions by charge compensation. Received: 24 January 2001 / Accepted: 2 March 2001 / Published online: 27 June 2001     

Free carrier absorption in n-type CdTe

Experimental results for free carrier absorption at room temperature in lightly doped samples of n-type CdTe, including the λ³ dependence of the absorption coefficient on the photon wavelength, can be satisfactorily accounted for in terms of polar optical mode scattering with a very small contribution by impurity scattering. Use is made of the quantum theory of free carrier absorption initially developed for direct gap III–V semiconducting compounds, which utilizes the Kane band structure and includes nonparabolicity, arbitrary spin-orbit splitting values, overlap wave function factors, and intermediate states in other bands.     

A study of the Faraday effect in yttrium aluminium garnets doped with cerium

Calculations of the Faraday rotation (FR) and magnetic circular dichroism spectra in the wavelength region between 300 nm and 650 nm caused by the Ce₃₊ ions in the Ce substituted aluminium garnets (YAG) based on the quantum theory are presented. The Faraday effect contributed by the Ce₃₊ ions is caused mainly by the intraionic electrical dipole transitions between the 4f and 5d configurations. The effect of the crystal field (CF) and spin orbit coupling on the Faraday effect has been discussed. The CF upon the Ce₃₊ ions doped in garnets depends strongly on the nature of the next-nearest neighbors. The CF upon the Ce₃₊ ions in YAG is weaker than that in yttrium iron garnets (YIG). Therefore, compared with Ce: YIG, the anomalous rotatory dispersions occur at higher frequencies. The shape of the FR spectrum caused by the Ce₃₊ ions in YAG is different from that caused by the Ce₃₊ ions in YIG. An explanation of this difference is given. The influence of the mixing of different multiplets of the ground configuration on the Faraday effect is discussed. Such mixing is one of the causes which make the magneto-optical coefficient vary with temperature.     

硅的间接跃迁双光子吸收系数谱

利用皮秒Nd:YAG脉冲激光器作为激发光源,测量出光子能量介于1.36 μm (0.912 eV)—1.80 μm (0.689 eV)之间的硅间接跃迁双光子吸收系数谱.尽管此波段范围内的激光光子能量小于硅间接带隙,但当激光辐照在硅基光电二极管受光面时,在二极管两电极端仍然探测到了显著的脉冲光伏信号.光伏信号峰值强度与入射光强呈二次幂函数关系,表明其是双光子吸收过程.采用pn结等效结电容充放电模型,将光伏响应信号峰值与入射光强相关联,从中提取出硅的间接跃迁双光子吸收系数,改变入射波长得到系数谱.研究表明:     

Pac study of the hyperfine interactions in154Gd3+ in rare-earth-garnets

The attenuation of the anisotropy of the γ-γ angular correlation for a rare-earth ion in magnetic iron and non-magnetic aluminum rare-earth garnets is governed by the static hyperfine electric field gradient (EFG) produced by the surrounding ions and by the static and fluctuating hyperfine magnetic fields produced by the 4f electrons of the ion. The latter effect depends upon the correlation time (τ_c) of the 4f electrons which, in turn, is determined by the interaction of the ionic spin with lattice vibrations and other magnetic ions. In an attempt to determine the significance of spin-spin relaxation on τ_c, perturbed angular correlation (PAC) measurements were performed on the S-state ion¹⁵⁴Gd³⁺ because spin-lattice interactions were expected to be small. The time-integral attenuation coefficients of the 1274/123 keV γ-γ cascade in¹⁵⁴Gd were measured in the temperature region 4.2–650 K for¹⁵⁴Gd³⁺ incorporated in GdAlG, GdIG, YAlG, and YIG. Rotation measurements were also made on the same cascade in the iron garnets at room temperature with an applied magnetic field in the range 0–15 kg. Employing independent measurements and calculated estimates of the static hyperfine magnetic field and EFG, the observed data could be interpreted in terms of reasonable values of τ_c. The correlation times were found to range from about 0.13 ns in YIG to about 1.30 ns in YAlG with GdAlG having a value of approximately 0.71 ns. In the case of GdIG, a self-consistent analysis of the data required a value of the lattice EFG which was larger than that estimated from the nearest neighbor point-ion model. The correlation time in GdIG was then found to be the same as in YIG.     

The absorption edge of amorphous As2S3

The absorption constantK of amorphous As₂S₃ was determined at the absorption edge in the range 1 to 10⁵ cm^–1. It is shown that at low energy levels up to about 10³ cm^–1 K depends exponentially on the photon energy; at higher absorption levels the energy dependence ofK is quadratic. The significance of these results is discussed. When sulphur is added to As₂S₃ the absorption edge has similar properties but is shifted towards lower energies.     

Quantum theory of free carrier absorption in polar semiconductors

A quantum mechanica treatment of the free carrier absorption by electrons in polar semiconductors has been constructed in terms of the Kane model. It takes into account overlap wavefunction factors, intermediate states in other bands, the finite optical phonon energy, and the effects of arbitrary spin orbit splitting on the electron energy and wavefunction. The scattering mechanisms considered include polar optical mode scattering, ionic scattering, piezoelectric and deformation coupled acoustic mode scattering, and electron-electron scattering.The theory, in the appropriate limits, applies to a wide range of photon energies, electron concentrations, and lattice temperatures. It relates the dominant scattering mechanism involved in the various limits to the characteristic behavior of the absorption coefficient as a function of the photon energy. In particular, the dominant scattering mechanism for small carrier concentrations is found to be polar optical mode scattering, which exhibits a λ³ dependence of the absorption coefficient times the index of refraction, (except at the lowest frequencies, where the expected λ² dependence is obtained).Ionic, or impurity, scattering becomes important as the carrier concentration is increased, and the characteristic wavelength dependence of the electron cross section times the index of refraction varies from λ⁴ to λ³, and the absorption coefficient times the index of refraction from λ⁴ to λ², depending on the ratio of the photon energy to the initial electron energies.Comparisons are made with the available data over a wide range of photon energies, temperatures, and electron concentrations, for the III–V compounds InSb, InAs, InP, and GaAs.     

Optical absorption due to transitions between bands and local levels in CdCr2Se4

The theory of optical absorption due to transitions between a valence band and a hydrogen-like local level associated with a conduction band is modified to permit an arbitrary power-law dependence of energy on the magnitude of the wave-vector of carriers in the valence band. The observed absorption for photon energies below 1.6 eV in the ferromagnetic semiconductor CdCr₂Se₄ is discussed in terms of a combination of two types of terms. The first type of absorption is due to transitions to a local level from a band with two branches, in each of which there is an energy region with a width of 0.28 eV or more beginning 0.10–0.16 eV from the band edge, in which the energy measured from some origin near but not necessarily equal to the band-edge is approximately proportional to (wave-vector)^{($\text{1}\text{3}$)}. The second type of absorption has a dependence on photon energy ?ω of the form (?ω ? E₃)², where E₃ is a threshold energy probably connected with indirect transitions between bands as suggested by Sakai, Sugano and Okabe. After constraints on parameters appearing in the theory are imposed by use of results of these authors and of Shepherd, it is found that curves of Harbeke and Lehmann on optical absorption in CdCr₂Se₄ at 4.2, 78, 130 and 298 K in the photon-energy range 1.14–1.42 eV can be fitted to a mean accuracy of 3%, using an average of 3.75 adjustable parameters for each curve. The strength of the indirect band-to-band absorption does not have the temperature dependence expected for phonon-assisted indirect band-to-band transitions, but can be described by a term independent of temperature plus another term proportional to the square of the deviation of the magnetization from saturation. The fitting of the absorption curves requires that the ratio of the widths of the two branches of the bands varies from about 1.6 at low temperatures to 1.35 at 298 K and that the total width of the bands involved is less than 1 eV.     

Interstitial iron and iron-acceptor pairs in silicon

Deep levels in iron-dopedp-type silicon are investigated by means of Deep Level Transient Spectroscopy (DLTS) and the Hall effect. Pairs of Fe with the acceptors B, Al, and Ga are observed at 0.1, 0.19, and 0.24 eV above the valence band edgeE _v. For interstitial iron, (Fe _i ), a level energy ofE _v+0.39+-0.02 eV is obtained with DLTS after correction with a measured temperature dependence of the capture cross section. The Hall effect yieldsE _v+0.37 eV for Fe_i. The annealing behavior of levels related to Fe is investigated up to 160 °C. Iron participates in at least four different types of impurity states: Fe _i , Fe-acceptor pairs, precipitations (formed above 120 °C) and an additional electrically inactive state, which is formed at room temperature.     

Absorption Spectra of Single Crystals of EuGa2S4 and EuGa2S4:Co

The optical properties of EuGa₂S₄ and EuGa₂S₄:Co single crystals in a range of temperatures from 77 to 300 K are investigated. The single crystals are obtained by the Bridgman method and are characterized by tetragonal syngony. The behavior of the optical transitions in the photon energy range 1.70–2.45 eV and the temperature range 77–300 K is determined. It is established that in the energy range 1.77–1.90 eV absorption is associated with transitions of the Co²⁺ ion, while in the range 2.20–2.40 eV, with indirect allowed optical transitions.     

Optical absorption and emission of LiYF4:Pr3+

The optical absorption, emission and excitation spectra of Pr³⁺ ions in LiYF₄ have been measured. Energy transfer is observed and an estimate of the energy transfer rate is made. The temperature dependence of the emission lifetimes for Pr³⁺ and Er³⁺ and the Judd-Ofelt theory were used to make this determination. The energy levels responsible for the various transitions have been assigned previously by Esterowitz et al. and the polarized optical absorption and emission data presented in this paper are in agreement with their excellent work.     

Effects induced by 𝛄-irradiation on intraband transitions in Sr2+-doped ammonium zinc chloride crystals

Considerable changes were observed in the X-ray diffraction pattern of ammonium zinc chloride after doping with Sr²⁺ in different concentrations and after irradiating with γ rays at different doses. The effect of γ-radiation and Sr²⁺ content on optical parameters of (NH₄)₂ZnCl₄: x Sr²⁺ single crystals (x?=?0.00, 0.020, 0.039, 0.087 or 0.144?wt.%) has been investigated. The transmittance near the absorption edge of unirradiated crystals and crystals irradiated with different γ-doses has been measured, hence the absorption coefficient (α) was calculated. The values of α at room temperature increased under the influence of γ-irradiation. The rate by which α increases with photon energy just before the absorption edge is strongly inhibited by higher γ-doses. The type of intraband transition in (NH₄)₂ZnCl₄: x Sr²⁺ single crystals was found to be of the allowed indirect transition, and γ-irradiation had no effect on the type of transition. The values of the optical energy gap (E _g ) were calculated as a function of γ-dose. The effect of γ-irradiation was found to be more pronounced on samples doped with x?=?0.087 or 0.144?wt.% Sr²⁺. The results can be discussed on the basis of γ-irradiation-induced defects and Sr²⁺ concentration. A diagram representing probable transitions to the created bands due to irradiation could be constructed.     

Fluorescence of Mn2+ in CaCO3

The fluorescence of Mn²⁺ ion as impurity in CaCO₃ has been investigated. Emission bands from the ⁴D(E_g), ⁴D(T_2g) and ⁴G(T_1g) levels have been observed. The analysis of excitation and emission spectra has allowed to obtain the values of field strength (Dq) for the excited energy levels of Mn²⁺ in CaCO₃ lattice. The temperature dependence of excitation and emission spectra yield an activation energy for thermal quenching of luminescence very close to theoretical calculation. The behaviour of luminescence lifetime with temperature has also been obtained.     

Wavelength and temperature characteristics of BiYbIG film/YIG crystal composite structure for magneto-optical applications

We report the wavelength and temperature characteristics of novel Bi-substituted rare-earth iron garnet films grown on a YIG substrate by a modified liquid phase epitaxy (LPE) technique. The Faraday-rotation spectrum was measured by the magneto-optically modulated dual-frequency technique with the wavelength varied from 800 nm to 1700 nm. The resultant Bi_0.37Yb_2.63Fe₅O₁₂ (BiYbIG) LPE film/YIG crystal structure showed an increased Faraday-rotation coefficient due to Bi³⁺-ion doping on the dodecahedral sites of the iron garnet without increasing absorption loss; therefore, a good magneto-optical figure of merit, defined by the ratio of Faraday rotation and optical absorption loss, has been achieved (21.5 deg/dB and 30.2 deg/dB at 1300-nm and 1550-nm wavelengths, respectively, at room temperature). In addition, since the Yb³⁺ and Y³⁺ ions provide opposite contributions to the wavelength and temperature characteristics of the Faraday rotation, the resultant BiYbIG LPE film/YIG crystal structure showed a flat Faraday-rotation curve versus wavelength and temperature. The Faraday-rotation wavelength coefficient was reduced to 0.06 %/nm at 1550-nm wavelength. The Faraday-rotation temperature derivative was reduced to 0.006 deg/°C at 1300-nm wavelength and 0.007 deg/°C at 1550-nm wavelength, respectively. PACS 78.20.Ls; 81.15.Lm; 75.50.Gg     

Absorption spectra of Bi3+ and Fe3+ in Y3Ga5O12

The absorption spectra of Y₃Ga₅O₁₂:(Fe³⁺), Y₃Ga₅O₁₂:(Bi³⁺) and Y₃Ga₅O₁₂:(Bi³⁺, Fe³⁺) are presented to 40,000 cm^-1. Assignments are discussed and the transitions analysed in terms of their involvement in the large Faraday rotation observed in bismuth substituted iron garnets.     

Optical absorption in layered MnGaInS<Subscript>4</Subscript> single crystals

Optical absorption in MnGaInS₄ single crystals has been studied. Direct and indirect optical transitions are found to occur in the range of photon energies of 2.37–2.74 eV and in the temperature range of 83–270 K. The temperature dependence of the band gap has been determined; its temperature coefficients E _gd and E _gi are −5.06 × 10⁻⁴ and −5.35 × 10⁻⁴ eV/K, respectively. MnGaInS4 single crystals exhibit anisotropy in polarized light at the absorption edge; the nature of this anisotropy is explained.     

Optical transitions of Eu2+ IONS in RbMgF3 crystals

Because of the need for tunable solid state lasers in the blue region of the spectrum, a number of recent studies have been on the optical properties of Eu²⁺ in various crystals lattices. The absorption and emission from Eu²⁺ ions in fluoride hosts arise from both 5d→4f and 4f→4f transitions. The absorption is in the ultra-violet and the emission is in the blue. The 4f-4f transitions are very sharp and are located around 360 nm. The 5d→4f emission bands at 405 nm and 525 nm are broad and host lattice dependent. We have studied the temperature dependence of the optical properties of RbMgF₃:Eu²⁺ including absorption, emission, and excitation. In the case of the emission studies both temperature dependence and the lifetimes of the transitions have been measured. These transitions are discussed in detail.     

Luminescent properties of LuAG:Yb and YAG:Yb single crystalline films grown by Liquid Phase Epitaxy method

In this work, investigation of the spectroscopic parameters of the luminescence of Yb³⁺ ions in single crystalline films of Lu₃Al₅O₁₂ and Y₃Al₅O₁₂ garnets was performed using the synchrotron radiation excitation with the energy in the range of Yb³⁺ charge transitions (CT), exciton range and the onset of interband transitions of these garnets. The basic spectroscopic parameters of the Yb³⁺ CT luminescence in LuAG and YAG hosts were determined and summarized with taking into account the differences in the band gap structure of these garnets.