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采用提拉法成功生长尺寸为φ30 mm× 75 mm的15at.%Yb3+:Gd2SiO5单晶, 并用Reitveld全谱拟合方法确定了其晶格常数、原子坐标和温度因子等参数. 用吸收光谱计算了Yb3+离子2F7/2↔ 2F5/2能级跃迁的振子强度、谱线强度、跃迁概率、 能级寿命和积分发射截面等光谱参数, 并根据激光性能评估得出结论: 表明该晶体具有较大的阈值特性, 有望采用大功率激光二极管泵浦实现可调谐或超快激光输出. 相似文献
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采用中频感应提拉法生长了高质量的Tm:Y2SiO5(Tm:YSO)晶体,测定了晶体的晶格常数和分凝系数.运用劳厄照相法确定了单斜晶系Tm:YSO晶体的三个偏振轴〈010〉,D1和D2,在室温下测量了三个偏振轴方向的吸收光谱、荧光光谱和荧光寿命,计算了晶体吸收峰的吸收线宽和吸收截面.研究发现,相对于其他两个偏振轴方向,D1方向在790nm处出现较强的吸收峰,
关键词:
2SiO5')" href="#">Tm:Y2SiO5
单斜晶系
吸收光谱
荧光光谱 相似文献
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采用共沉淀法制备了纳米晶ZrO2-Al2O3∶Er3+发光粉体.所制备的粉体室温下具有Er3+离子特征荧光发射,主发射在绿光,其中位于547 nm、560 nm的绿光最强,并得出稀土离子与基质之间有能量传递.对不同煅烧温度下的样品研究表明:因不同温度下所制得的样品晶相不同.研究了纳米晶ZrO2-Al2O3∶Er3+及ZrO2-Al2O3∶Er3+/Yb3+的上转换发光,并分析了上转换的跃迁机制.发现ZrO2-Al2O3∶Er3+的绿光为双光子过程,而ZrO2-Al2O3∶Er3+、Yb3+的上转换光谱中,红光和绿光也为双光子过程,而极弱的蓝光为三光子过程.讨论了Er3+的浓度猝灭现象.最适宜掺杂浓度的原子分数为2%(Er3+/Zr4+). 相似文献
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采用化学自燃烧法制备了不同Ag+掺杂浓度的Y2O3:Eu纳米晶体粉末样品([Y3+]∶[Eu3+]∶[Ag+]=99∶1∶X,X=0—3.5×10-2),以及通过退火处理得到了相应的体材料.根据X射线衍射谱确定所得纳米和体材料样品均为纯立方相.实验表明在纳米尺寸样品中随着Ag离子浓度的增加,荧光发射强度随之增加,当X=2×10-2时达到最大值,其发光强度比X=0时提高了近50%.当Ag离子浓度继续增加,样品发光强度保持不变.在相应的体材料样品中则没有观察到此现象.通过对各样品的发射光谱,激发光谱,X射线衍射图谱,透射电镜(TEM)照片和荧光衰减曲线的研究,分析了引起纳米样品荧光强度变化的原因是由于Ag离子与表面悬键氧结合,从而使这一无辐射通道阻断,使发光中心Eu3+的量子效率提高;Ag+的引入所带来的另一个效应是使激发更为有效.这两方面原因使发光效率得到了提高. 相似文献
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在室温及不同的氧氩比条件下,采用射频磁控溅射Ag层和直流磁控溅射SnO2层,在载玻片衬底上制备出了SnO2/Ag/SnO2多层薄膜.用霍尔效应测试仪、四探针电阻测试仪和紫外-可见-近红外光谱仪等表征了薄膜的电学性质和光学性质.实验结果表明:当氧氩比为1:14时,所制得的薄膜的光电性质优良指数最大,为1.69×10-2 Ω-1;此时,薄膜的电阻率为9.8×10-5 Ω·cm,方电阻为9.68 Ω/sq,在400~800 nm可见光区的平均光学透射率达85%;并且,在氧氩比为1:14时,利用射频磁控溅射Ag层和直流磁控溅射SnO2层在PET柔性衬底上制备出了光电性质优良的柔性透明导电膜,其在可见光区的平均光学透过率达85%以上,电阻率为1.22×10-4 Ωcm,方电阻为12.05 Ω/sq. 相似文献
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Yb:Sc2O3 transparent ceramics are fabricated by a conventional ceramic process and sintering in H2 atmosphere. The room-temperature spectroscopic properties are investigated, and the Raman spectrum shows an obvious vibration characteristic band centred at 415 cm-1. There are three broad absorption bands around 891, 937, and 971 nm, respectively. The strongest emission peak is centred at 1.04 μm with a broad bandwidth (11 nm) and an emission cross-section of 1.8×10^-20 cm^2. The gain coefficient implies a possible laser ability in a range from 990 nm to 1425 nm. The energy-level structure shows that Yb:Sc2O3 ceramics have large Stark splitting at the ground state level due to their strong crystal field. All the results show that Yb:Sc2O3 transparent ceramics are a promising material for short pulse lasers. 相似文献
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在半导体激光器高功率抽运的镱、钠共掺氟化钙(Yb, Na:CaF2)激光器中, 通过对晶体的负热透镜效应的数值模拟,进行激光器腔型的调节和优化,使得该激光器在采用2%的耦合输出镜和吸收抽运功率为7.8 W的条件下,获得了脉冲宽度为190 fs、平均输出功率为503 mW、中心波长为1034 nm、重复频率为82.4 MHz的连续锁模脉冲序列. 如果计算晶体表面反射等其他形式的泄漏输出,激光器的总平均输出功率为905 mW.
关键词:
Yb
2晶体')" href="#">Na:CaF2晶体
激光二极管抽运
飞秒激光 相似文献
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Jianhui Yuan Heng Ji Xuebing Zheng Qichao Ruan Yaran Niu Ziwei Liu Yi Zeng 《Applied Surface Science》2010,256(16):4938-4944
A promising WC-Co-Cu-BaF2/CaF2 self-lubricating wear resistant coating was deposited via atmospheric plasma spraying (APS) process by using homemade feedstock powders composed of WC-Co, Cu and BaF2/CaF2 eutectic. The as-prepared cermet coatings had better frictional behavior comparing with the WC-Co coating. Moreover, the often-occurred decarburization of WC in APS process was noticeably improved due to the binding of copper and BaF2/CaF2 phase, which not only offered effective solid lubrication, but also acted as bind phases to mend the microstructure and protected WC from decomposition. The optimized specimen contained 10 wt.% Cu and 10 wt.% BaF2/CaF2 in a WC-Co matrix, which had excellent frictional and wear performance. The wear mechanism of the self-lubricating wear resistant coating was discussed with the microstructures, compositions and mechanical properties of the composite materials in detail. 相似文献
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Thin films of CaF2 co-doped with low concentrations of Eu and Sm ions were grown by pulsed laser deposition (PLD) using a KrF (λ=248 nm) as the ablation source. To the best of our knowledge, the work presented here is the first report of rare-earth-doped CaF2 films grown by PLD with this source. Combined laser excitation-emission spectroscopy was used to map out electronic transitions of Eu3+ with 7F0→5D1 excitation and the 5D0→7F1 emission. At the low concentrations used here the crystal field center of cubic symmetry is dominant in the films that are same for laser targets. However, charge compensated centers are present in the bulk crystal precursor. The removal of the charge compensated centers in the films and the target is likely caused by the target preparation where high pressure and temperature were applied. 相似文献
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ZnO thin films were grown on (111) CaF2 substrates by magnetron sputtering at room temperature. Structural and optical properties of the ZnO thin films were studied. XRD analysis showed that the ZnO thin films had the (002) preferential orientation. The transmittance of ZnO thin films was over 80% in the visible range. The optical band gap of the ZnO thin films was 3.26 eV. The optical constants (n,k) of the ZnO thin films in the wavelength range 300–1000 nm were obtained by infrared spectroscopic ellipsometry measurement. PL spectra of ZnO thin films showed strong UV near-band-edge emission peak at 376.5 nm and weak visible red emission at 643.49 nm using He–Cd laser as the light source, using a synchrotron radiation light source PL spectra showed three emission peak at 320 nm, 410 nm and 542 nm respectively. 相似文献
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Weixiong You Fengqin LaiHonghui Jiang Jinsheng Liao 《Physica B: Condensed Matter》2012,407(7):1094-1098
Er3+ doped and Yb3+/Er3+ co-doped Y4Al2O9 phosphors are prepared by the sol-gel method. The effect of dopant concentration on the structure and up-conversion properties is investigated by X-ray diffraction (XRD) and photoluminescence, respectively. XRD pattern indicates that the sample structure belongs to monoclinic. Under 980 nm excitation, the green and red up-conversion emissions are observed and the emission intensities depended on the Yb3+ ion concentration. The green up-conversion emissions decrease with the increase of Yb3+ concentration, while red emission increases as Yb3+ concentration increases from 0 to 8 at% and then decreases at high Yb3+ concentration. The mechanisms of the up-conversion emissions are discussed and results shows that in Er3+ and Yb3+/Er3+ co-doped system, cross-relaxation (CR) and energy transfer (ET) processes play an important role for the green and red up-conversion emissions. 相似文献
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Liu Jing-Hui Tian Jin-Rong Hu Meng-Ting Xu Run-Qin Dou Zhi-Yuan Yu Zhen-Hua Song Yan-Rong 《中国物理 B》2015,24(2):24215-024215
We present a passively Q-switched Yb:KGW laser based on a transmission-type saturable absorber of topological insulator:Bi_2Se_3.The saturable absorber is prepared on a 0.17-mm glass substrate and can translate intra-cavity for best performance nearly without influence on the laser mode.At a maximum pump power of 13.7 W,the central wavelength,pulse duration,repetition rate,and pulse energy of Q-switched pulse are 1043 nm,1.5 μs,175.4 kHz,6.39 μJ,respectively.The maximum output power is 1.12 W.To our knowledge,this is the highest average output power from passively Qswitched lasers with topological insulator saturable absorbers. 相似文献
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C. Q. Wang H. J. Zhang Y. T. Chow J. H. Liu L. Zhu J. Y. Wang X. L. Meng W. A. Gambling 《Optics & Laser Technology》2001,33(6)
The polarised absorption and fluorescence spectra of Nd:Gd0.8La0.2VO4 crystal are measured and compared to those of Nd:GdVO4. CW laser properties of diode-pumped Nd:Gd0.8La0.2VO4 crystal operating at fundamental wavelengths of 1.06 and 1.34 μm, as well as when intracavity frequency-doubled to 532 and 670 nm, have been studied. The maximum output powers at 1.06 μm, 1.34 μm, 532 nm and 670 nm are 1.18 W, 671 mW, 206 mW and 42 mW respectively, at a diode-launched pump power of 2.9 W. The threshold pump powers are 80, 267, 7 and 15 mW respectively. 相似文献
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利用熔融快淬结合放电等离子烧结(SPS), 制备了CuxAg1-xSbTe2(x= 0---0.3)样品. 粉末X射线衍射(XRD)分析结果显示, SPS处理以前, 含Cu样品形成NaCl型结构的固溶体, 而未加入Cu的样品析出Ag2Te第二相. 根据热分析和XRD测量结果, Cu的加入能够有效抑制Ag2Te的析出, 但同时会在快淬样品中产生少量非晶相. 在温度升高到540 K左右时, 非晶相发生晶化, 形成Sb7Te亚稳相, 并最终转变成Sb2Te3稳定相. 对快淬样品进行低温SPS快速处理后, x =0.1样品为面心立方结构的单相化合物, 但是x =0.2, 0.3的样品分别析出第二相Sb7Te和Sb2Te3. 由于析出第二相, x=0.2, 0.3样品的电导率增大, Seebeck系数减小, 热导率相应升高, 综合热电性能降低. x=0.1单相样品的功率因子与文献报道的AgSbTe2化合物相当. 元素替代的合金化效应 增强了Cu0.1Ag0.9SbTe2化合物的声子散射, 有效降低了样品的热导率. 因此, 单相样品Cu0.1Ag0.9SbTe2表现出较佳的热电性能, 在620 K时热电优值达到1. 相似文献