Airy传递矩阵法与偏压下多势垒结构的准束缚能级

使用Airy函数和传递矩阵方法精确计算了一维定态薛定谔方程，并推广到多势垒结构，求解出有/无偏压作用的2,3势垒结构的准束缚能级，进一步研究了有/无偏压作用的2,3势垒结构的准束缚能级与有效质量和外加电压的关系，并对结论的正确性进行了验证． 另外，文中 还指出了有些文章中关于Airy传递矩阵法与计算偏压下多势垒结构的准束缚能级的错误陈述 . 关键词： 准束缚能级 有/无偏压作用的多势垒结构 Airy函数 透射系数     

Bn(n =2-15)团簇的几何结构和电子性质

应用密度泛函理论中的B3LYP方法计算并分析了不同生长模式下Bn(n= 2-15)团簇的几何结构及电子性质.同时,比较和讨论了不同生长模式下硼团簇的原子束缚能、能级间隙和第一电离势.研究表明:直线构型稳定性最低,金属性较强,尤其在n=8时能隙仅有0.061eV,说明该团簇已具有金属特征.平面或准平面构型稳定性最高,非金属性强.立体构型的稳定性与金属性介于直线和平面构型之间.另外,还讨论了基态团簇的束缚能、能量二阶差分、能级间隙和第一电离势随团簇尺寸的变化,结果表明B12与B14是幻数团簇.     

弱耦合GaAs/AlGaAs/InGaAs双势阱隧穿结构的磁隧穿特性研究

研究了低温(15 K)条件下弱耦合GaAs/AlGaAs/InGaAs双势阱结构的纵向磁隧穿特性. 研究表明,器件在零偏压下处于共振状态. 通过分析不同偏压下的磁电导振荡曲线,可以得到双量子阱中的基态束缚能级随偏压的变化规律,从而可以确定隧穿电流峰对应的隧穿机制. 所得结果可为弱耦合双量子点器件的制备提供基础. 关键词： 双量子阱 隧穿结构 磁电导振荡     

Bloch定理在单层石墨烯多势阱结构体系中的应用

石墨烯材料中观测到Klein隧穿效应,也因其特殊的光学、电学等特性而被广泛研究.本文设计了等高的多势垒体系来分析载流子的隧穿效应.由Bloch定理得到周期性势垒结构中的能带结构,分析载流子的状态和共振隧穿区.数值研究结果表明,通过调制势垒、势阱宽度、势垒高度、以及载流子入射能量等参数来获得所需的隧穿概率,并可进一步分析电导特性.     

单负材料一维光子晶体超窄带滤波特性研究

用传输矩阵法研究了单负材料一维光子晶体(ABD)m(CBA)n(ABD)m(CBA)n的透射谱。结果表明:当增加周期数m或D层介质厚度dD时,透射谱中的两个隧穿模越加锋锐,但所处频率位置不变;当增加周期数n或C层介质厚度dC时,透射谱中的两个隧穿模向中间靠拢趋于简并;当增加A层介质厚度dA时,透射谱中双隧穿模结构及位置无变化,而当增加B层介质厚度dB时,透射谱中的三模结构向低频方向移动,且逐渐消失;随着入射角θ的增大,透射谱中两隧穿模向禁带中心靠拢。利用单负材料光子晶体的透射谱特性可实现可调性和高品质的单、多通道超窄带滤波功能。     

磁台阶势垒结构中二维电子气的自旋极化输运

运用散射矩阵方法,研究了台阶磁势垒量子结构中二维电子气的隧穿输运性质.结果表明：在零偏压下,电子传输概率的自旋极化曲线随入射能量的增加而振荡衰减;随着磁台阶数的增加,电子传输概率的自旋极化度最大值减小,同时电子传输概率的自旋极化度振荡衰减也越来越慢;随着磁台阶的总宽度增加,电子传输概率的自旋极化曲线出现更明显的振荡,电子隧穿磁台阶势垒表现出明显的量子尺寸效应;在偏置电压的作用下,电子传输概率的自旋极化度在宽广的入射能量区出现明显的振荡增大,电子隧穿磁台阶势垒表现出更明显的自旋过滤效应. 关键词： 磁台阶势垒 自旋极化 自旋过滤     

单电子三势垒隧穿结I-V特性研究

在正统理论的基础上，提出了单电子三势垒隧穿结模型的主方程，并用线性方程组解法求出了其稳态解.通过数值模拟，得到了该系统的I-V特性曲线.发现其有别于双势垒隧穿结的情况，在传统库仑台阶的平台处曲线存在波纹状结构，分析得出这是由于第二个库仑岛上的电子数变化对I-V曲线的影响.此外，研究了各物理参数对I-V曲线的影响，发现三结系统可以降低对温度的要求，并应用Fermi能级处的能级间隔估算出出现库仑台阶现象的最高温度Tmax，为相关单电子器件的参数选择提供了理论依据. 关键词： 正统理论 库仑台阶 主方程 隧穿概率     

含单负介质层受阻全内反射结构的光子隧穿现象研究

利用稳定相位理论得到了光子穿越含单负介质层受阻全内反射结构的隧穿时间以及光子穿透光学势垒后产生的横向位移.分析结果表明，当势垒为单负介质时，光子隧穿可能表现出负的隧穿时间和负的横向位移.隧穿时间和横向位移存在Hartman效应，使得光子隧穿过程具有超光速性质.此外，基于TM波和TE波通过负介电常数介质和负磁导率介质势垒产生的横向位移的方向正好相反，得到了一种有效的区分两类单负介质的方法. 关键词： 光子隧穿 负折射 单负介质 超光速     

两体和三体相互作用下的非线性Landau-Zener隧穿的圈结构研究

在加速光晶格中玻色-爱因斯坦凝聚体（BEC）,当同时考虑两体和三体相互作用时,其能级结构、隧穿率出现了独特的特性.在一维加速光晶格中的BEC,当两体和三体相互作用参数满足一定条件时,非线性两能级体系的能级结构中出现了圈结构,研究得出了圈的宽度随两体和三体相互作用参数变化的关系,并由此分析圈结构的出现及其大小对BEC隧穿率的影响.     

超薄栅氧化层n-MOSFET软击穿后的导电机制

研究了恒压应力下超薄栅氧化层n型金属-氧化物-半导体场效应晶体管（n-MOSFET）软击穿 后的导电机制.发现在一定的栅电压V_g范围内，软击穿后的栅电流I_g符合Fowl er-Nordheim隧穿公式，但室温下隧穿势垒_b的平均值仅为0936eV，远小于S i/Si O₂界面的势垒高度315eV.研究表明，软击穿后，处于Si/SiO₂界 面量子化能级上的 电子不隧穿到氧化层的导带，而是隧穿到氧化层内的缺陷带上._b与缺陷带能 级和电 子所处的量子能级相关；高温下，激发态电子对隧穿电流贡献的增大导致_b逐 渐降低. 关键词： 软击穿 栅电流 类Fowler-Nordheim隧穿 超薄栅氧化层     

A theoretical study of resonant tunneling characteristics in triangular double-barrier diodes

Resonant tunneling characteristics of triangular double-barrier diodes have been investigated systematically in this Letter, using Airy function approach to solve time-independent Schrödinger function in triangular double-barrier structures. Originally, the exact analytic expressions of quasi-bound levels and quasi-level lifetime in symmetrical triangular double-barrier structures have been derived within the effective-mass approximation as a function of structure parameters including well width, slope width and barrier height. Based on our derived analytic expressions, numerical results show that quasi-bound levels and quasi-level lifetime vary nearly linearly with the structure parameters except that the second quasi-level lifetime changes parabolically with slope width. Furthermore, according to our improved transmission coefficient of triangular double-barrier structures under external electric field, the current densities of triangular double-barrier diodes with different slope width at 0 K have been calculated numerically. The results show that the N-shaped negative differential resistance behaviors have been observed in current–voltage characteristics and current–voltage characteristics depend on the slope width.     

Tunable Fano resonances in the ballistic transmission and tunneling lifetime in a biased bilayer graphene nanostructure

Dynamics of the Dirac fermions, in particular the transmission coefficient and the resonant tunneling lifetime are studied across a bilayer graphene electrostatic double barrier structure modulated by an in plane homogeneous electric field. Asymmetric Fano type resonances are noted for the first time in the transmission spectrum of the bilayer graphene nanostructures and are found to be highly sensitive to the direction of incidence of the charge carriers and the applied homogeneous electric field. The effect of the external field on the extended and the evanescent modes is also analysed. Resonant tunneling lifetime is found to be highly anisotropic in nature. The chiral carriers are either accelerated or decelerated by the electric field depending on the energy of the quasi-bound states, the angle of incidence and the magnitude of the applied field. Effects of the external field on the localization of the chiral carriers are also discussed.     

Evidence of the enhanced resonant tunneling effect in a triple-barrier heterostructure

The effect of properly lined-up quantum-well (QW) states, under an external bias, on the electron resonant tunneling is investigated in an InAlAs/InGaAs triple-barrier structure. The degree of alignment of two QW confined ground states at a resonant voltage is analyzed with low-temperature measurement. The experimental data shows the enhanced resonant tunneling effects, and proves that the second QW structure added to the InGaAs/ InAlAs double-barrier heterostructure can act as an effective tool for probing and extracting the resonant tunneling properties deep in a QW.     

Resonant tunneling and confining phenomena in symmetrical rectangular triple-barrier structures with c-type deep wells

Theoretical study of resonant tunneling is carried out in rectangular triple-barrier structures with C-type deep wells. Analytical expressions for the transmission coefficient and the resonance conditions are derived. Transmission characteristics versus electron energy are investigated and it is shown analytically that the transmission spectrum is a Lorentzian in form near energies of resonance. It is confirmed that the resonance energy is almost equal to the eigenenergy of the double-well structure. Moreover, wave functions of an electron at the resonance level are examined and the confining phenomenon is studied.     

Enhanced electron tunneling and Γ–X interlayer intervalley electron transfer in a triple-barrier heterostructure

The enhanced electron tunneling effect and the electron Γ–X intervalley interlayer transfer in the AlAs/GaAs (001) triple-barrier heterostructure have been investigated both experimentally and theoretically. The effects of the external bias on the electronic structure, Γ–X state mixing and higher lying excited energy states are studied. The experimental observations show good agreement with the theoretical predictions based on the scattering theoretical approach of Green's function theory, which can handle electron interlayer intervalley propagation through the layered aperiodic heterostructure under the external bias.     

Magneto-optical studies of ballistic electron transport in single barrier heterostructures

We report an investigation of ballistic electron transport in GaAs/AlGaAs p-i-n single barrier structures with magnetic fields of up to 14T applied parallel to the tunneling direction (B//z). The energy distribution and relaxation processes of the non-equilibrium electron population injected into the p-doped collector from the Landau levels of the emitter accumulation layer are studied by means of electroluminescence (EL) spectroscopy. The observation of emitter Landau level structure in the ballistic electron EL spectra shows that the 2D to 3D tunneling process is elastic. In addition to the ballistic electron EL, cross-barrier recombination between the electron and hole accumulation layers is observed. This allows a precise determination of the initial energy distribution of the injected electrons.     

Hall resistivity of granular metals

We calculate the Hall conductivity sigma(xy) and resistivity rho(xy) of a granular system at large tunneling conductance g(T)>1. We show that in the absence of Coulomb interaction the Hall resistivity depends neither on the tunneling conductance nor on the intragrain disorder and is given by the classical formula rho(xy)=H/(n*ec), where n* differs from the carrier density n inside the grains by a numerical coefficient determined by the shape of the grains. The Coulomb interaction gives rise to logarithmic in temperature T correction to rho(xy) in the range Gamma less or similar T less or similar min(g(T)E(c), E(Th)), where Gamma is the tunneling escape rate, E(c) is the charging energy, and E(Th) is the Thouless energy of the grain.     

Parity and abrupt broadening of resonance levels in triple-barrier structures

Expressions for resonance active high-frequency small-signal conductivity and resonance level widths have been derived for asymmetric triple-barrier resonance-tunneling structures with thin high barriers. It is found that if the levels forming a common resonance level have different parities in each of double-barrier structures, the width of the common level and, accordingly, the total conductance of the entire structure may increase manifold for a certain choice of the triple-barrier structure parameters. Consequently, the lifetime of electrons on this level also decreases drastically; hence, the conditions of coherent transport (departure of electrons from the structure without their collision with phonons) can be easily realized.     

Velocity fluctuations of a column of water streaming down a wire: the possibility of one-dimensional turbulence

In this paper we study the influence of the magneto-coupling effect between the longitudinal motion component and the transverse Landau orbits of an electron on transmission features in single barrier structures. Within the parabolic conduction-band approach, a modified one-dimensional effective-mass Schr?dinger equation, including the magneto-coupling effect generated from the position-dependent effective mass of the electron, is strictly derived. Numerical calculations for single barrier structures show that the magneto-coupling effect brings about a series of the important changes for the transmission probability, the above-barrier quasi-bound states, and the tunneling time. Through examining the variation of the above-barrier resonant-transmission spectrum with the barrier width and observing the well-defined Lorentzian line-shape of the above-barrier resonant peaks, we convincingly show that the above-barrier resonant transmission in single barrier structures is delivered by the above-barrier quasibound states in the barrier region, just as the below-barrier resonant tunneling in double barrier structures is mediated by the below-barrier quasi-bound states in the well. Furthermore, we come to the conclusion that the magneto-coupling effect brings about not only the splitting of the above-barrier quasi-bound levels but also the striking reduction of the level-width of the quasi-bound states, correspondingly, the substantial increase of the density of the quasi-bound states. We suggest that magneto-coupling effects may be observed by the measurements of the optical absorption spectrum associated with the above-barrier quasi-bound states in the single barrier structures. Received: 26 September 1997 / Revised: 26 November 1997 / Accepted: 15 December 1997