Magnetic susceptibility studies of (CH2)3(NH3)2FeCl2Br2 and (CH2)6(NH3)2FeCl2Br2

The magnetic susceptibility of the layered compounds (CH₂)₃(NH₃)₂FeCl₂Br₂ and (CH₂)₆(NH₃)₂FeCl₂Br₂ has been measured in the range 80 < T < 300 K. The results follow a Curie-Weiss behavior in the range 120 < T < 300 K but are field dependent for T < 120 K. The results are interpreted in terms of a two-dimensional antiferromagnetic interaction which is canted. A comparison with the corresponding pure chloride compounds is given.     

Wing profile measurements of the Na-doublet lines in C2H2/O2/N2, H2/O2/N2 and H2/O2/Ar frames at 1 atm

Fluorescence-excitation (wing) profiles of the Na-D doublet lines were measured over a wavelength range extending from 0.3 to 200 Å from the line center for the red D₁ and blue D₂ wings and from 0.3 to 3 Å for the red D₂ and the blue D₁ wings, respectively. The line profiles were determined with the aid of a tunable CW dye-laser as a background source by measuring the total fluorescence intensity observed on detuning the laser wavelength. The flames were premixed, laminar, shielded flames at 1 atm, with temperatures ranging from 1860 to 2270 K; N₂ and Ar served as diluent gases. The line core and near-wing profiles (i.e. the region covering 0.3<Δλ<7 Å for the outer wings and 0.3<Δλ<3 Å for the inner ones) in all of the flames studied appeared to have the same frequency dependence, regardless of the nature and concentrations of the gases used. The blue D₂-line profile followed an unexpected (-2.2) law, while the other three profiles obeyed the theoretically expected (-2) law (the dispersion profile function). The line profile in the Δλ range between the impact and quasistatic regions was found to depend on the main perturbers involved. We found that the far blue D₂- and red D₁-wings in the Ar-diluted H₂/O₂ flame obeyed the (-$\text{5}\text{4}$) and (-$\text{3}\text{2}$) laws, respectively, as predicted by the quasi-static theory for the Lennard-Jones interaction. For the N₂-diluted C₂H₂/O₂ and H₂/O₂ flames, we did not find these wing dependences in the Δλ range investigated.     

Magnetic properties of NdCo2Ge2, ErCo2Ge2 and PrFe2Ge2 compounds

Magnetometric and neutron diffraction studies of polycrystalline NdCo₂GE₂, ErCo₂Ge₂ and PrFe₂Ge₂ compounds were carried out in the temperature range between 4.2 and 300 K. All samples are antiferromagnetic with Néel temperature 26.5, ～ 4.2 and 13 K, respectively. The RECo₂Ge₂ compounds have collinear antiferromagnetic order of +?+? type. For PrFe₂Ge₂ a sinusoidal magnetic structure is observed. Magnetic moment is localized on RE atoms only and is equal to that of RE³⁺ free ion value. In ErCo₂Ge₂ the magnetic moment of Er atoms is perpendicular to the c-axis, whereas for remaining compounds it is parallel to the c-axis.     

Neutron diffraction study of magnetic ordering in PrCu2Si2, PrCu2Ge2, PrFe2Ge2 and NdFe2Ge2

A neutron diffraction study of polycrystalline PrCu₂Si₂ [1], PrCu₂Ge₂ [2], PrFe₂Ge₂ [3] and NdFe₂Ge₂ [4] intermetallics carried out at liquid helium temperature shows the presence of a collinear antiferromagnetic order below T_N = 19 ± 1 K [1], T_N = 16 ± 1 K [2], T_N = 9 ± 1 K [3] and 13 ± 1 K [4]. Magnetic moment, parallel to the c-axis is localized on RE ions only. The magnetic structure of these compounds consists of ferromagnetic layers perpendicular to the c-axis coupled antiferromagnetically with sequence +-+- for PrCu₂Si₂ and PrCu₂Ge₂ and +--+ for PrFe₂Ge₂ and NdFe₂Ge₂. The RE moments amount close to the free ion values for Fe containing compounds but are smaller in those containing Cu suggesting a fairly strong influence of crystal field.     

XPS investigation of diffusion of two-layer ZrO2/SiO2 and SiO2/ZrO2 sol–gel films

Two-layer ZrO₂/SiO₂ and SiO₂/ZrO₂ films were deposited on K9 glass substrates by sol–gel dip coating method. X-ray photoelectron spectroscopy (XPS) technique was used to investigate the diffusion of ZrO₂/SiO₂ and SiO₂/ZrO₂ films. To explain the difference of diffusion between ZrO₂/SiO₂ and SiO₂/ZrO₂ films, porous ratio and surface morphology of monolayer SiO₂ and ZrO₂ films were analyzed by using ellipsometry and atomic force microscopy (AFM). We found that for the ZrO₂/SiO₂ films there was a diffusion layer with a certain thickness and the atomic concentrations of Si and Zr changed rapidly; for the SiO₂/ZrO₂ films, the atomic concentrations of Si and Zr changed relatively slowly, and the ZrO₂ layer had diffused through the entire SiO₂ layer. The difference of diffusion between ZrO₂/SiO₂ and SiO₂/ZrO₂ films was influenced by the microstructure of SiO₂ and ZrO₂.     

Cation ordering and crystal structures in AGa2X4 compounds (CoGa2S4, CdGa2S4, CdGa2Se4, HgGa2Se4, HgGa2Te4)

Single crystals of some AGa₂X₄ compounds (CoGa₂S₄, CdGa₂S₄, CdGa₂Se₄, HgGa₂Se₄, HgGa₂Te₄) were prepared by chemical vapour deposition and flux method.The X-ray structural investigations indicated blende or defect chalcopyrite structures.A simple relationship is suggested between the c/a ratio and the cationic sublattice ordering.     

Microwave linewidths of C2H4O perturbed by H2, N2, O2 and CO2

Microwave linewidths of C₂H₄O (κ = -0.41) broadened by H₂, N₂, O₂, and CO₂ and considering dipole-quadrupole interactions have been calculated using the Mehrotra-Boggs theory (1977). This theory accounts satisfactorily for observed linewidths     

Emission features of Ho ion in Nb2O5, Ta2O5 and La2O3 mixed Li2O-ZrO2-SiO2 glasses

Li₂O-ZrO₂-SiO₂: Ho³⁺ glasses mixed with three interesting d-block elemental oxides, viz., Nb₂O₅, Ta₂O₅ and La₂O₃, were prepared. Optical absorption and photoluminescence spectra of these glasses have been recorded at room temperature. The luminescence spectra of Nb₂O₅ and Ta₂O₅ mixed Li₂O-ZrO₂-SiO₂ glasses (free of Ho³⁺ ions) have also exhibited broad emission band in the blue region. This band is attributed to radiative recombination of self-trapped excitons (STEs) localized on substitutionally positioned octahedral Ta⁵⁺ and Nb⁵⁺ ions in the glass network. The Judd-Ofelt theory was successfully applied to characterize Ho³⁺ spectra of all the three glasses. From this theory various radiative properties, like transition probability A, branching ratio β_r and the radiative lifetime τ_r, for ⁵S₂ emission levels in the spectra of these glasses have been evaluated. The radiative lifetime for ⁵S₂ level of Ho³⁺ ions has also been measured and quantum efficiencies were estimated. Among the three glasses studied the La₂O₃ mixed glass exhibited the highest quantum efficiency. The reasons for such higher value have been discussed based on the relationship between the structural modifications taking place around the Ho³⁺ ions.     

Adsorption-desorption studies using ESD of CCl2F2, C2H2F2 and C2F6 on tungsten

The behavior of the desorbing F⁺ ion current from electron bombarded CCl₂F₂, C₂H₂F₂ and C₂F₆ adsorbed on tungsten has been used to investigate the processes of adsorption and desorption of these gases. For tungsten near room temperature, measurements of the F⁺ ion current as a function of electron bombardment time indicated very similar or even identical F⁺-yielding adsorbed species resulting from adsorption of either CCl₂F₂ or C₂H₂F₂ and widely different species from C₂F₆. Cl⁺ ions were also observed to desorb from CCl₂F₂ ad-layers. The behavior of the Cl⁺ ion current with time during electron bombardment indicated electronic conversion between adsorbed binding modes. Complementary investigations on the interaction of CCl₂F₂, C₂H₂F₂ and C₂F₆ with tungsten were carried out by thermal desorption experiments in which the F⁺ ion signal was used to observe the coverage decrease of the F⁺-yielding species. The experiments were performed at tungsten temperatures in the 1200–1600 K range. It was concluded that the F⁺-yielding adsorbed species from CCl₂F₂ and C₂H₂F₂ were strongly bound to the tungsten surface. The F⁺-yielding species from C₂F₆ were found to be weakly bound. From a comparison of the ESD and thermal desorption results, the possibility of dissociative adsorption as well as the nature of the adsorbed species is discussed.     

Photoelectron and electronic absorption spectra of SCl2, S2Cl2, S2Br2 and (CH3)2S2

Photoelectron and electronic absorption spectra of SCl₂, S₂Cl₂, S₂Br₂, and (CH₃)₂S₂ have been measured and analyzed. Quantum chemical calculations (CNDO/ 2 and MWH (Mulliken-Wolfsberg-Helmholtz) have been carried out and the electronic structures have been described in terms of molecular orbital theory. The variation in differential photoionization cross-section as a function of incident photon energy and results of MO computations are used to identify ionization bands and assign ground state MO configurations. Suggested ground state electronic structures coupled with computed virtual MO's are used to interpret the visible and near-ultraviolet electronic absorption spectra. The low energy excited states are described as molecular states followed by the initial members of Rydberg series. Calculated oscillator strengths for molecular transitions are in good agreement with those observed experimentally. Quantum defects, δ, for the Rydberg states have been calculated from the Rydberg equation using the adiabatic first ionization potential.     

Ultraviolet reflectivity spectra of CuInSe2, CuInTe2 and CuGaTe2

Reflectivity spectra of CuInSe₂, CuInTe₂ and CuGaTe₂ are measured in the photon energy range from 2 to 9 eV. All compounds exhibit nearly the same reflectivity structures, and a comparison with measurements on the other Cu-III-VI₂ semiconductors shows that the band structures of all Cu-III-VI₂ compounds should be very similar except the energy range near the fundamental edge.     

Magnetic ordering in NdRh2Si2 and ErRH2Si2

Neutron diffraction and magnetization study of polycrystalline NdRh₂Si₂ and ErRh₂Si₂ was performed in the temperature range from 4.2 to 293 K. Both compounds are of ThCr₂Si₂ type crystal structure and exhibit antiferromagnetic ordering below T_N = 53 K and T_N = 12.8 K respectively. The magnetic structure wave vector is τ = [0, 0, 1].     

The ν2, 2ν2, 3ν2, ν4, and ν2 + ν4 bands of 15NH3

The ir absorption of gaseous ¹⁵NH₃ between 510 and 3040 cm^?1 was recorded with a resolution of 0.06 cm^?1. The ν₂, 2ν₂, 3ν₂, ν₄, and ν₂ + ν₄ bands were measured and analyzed on the basis of the vibration-rotation Hamiltonian developed by V. ?pirko, J. M. R. Stone, and D. Papou?ek (J. Mol. Spectrosc.60, 159–178 (1976)). A set of effective molecular parameters for the ν₂ = 1, 2, 3 states was derived, which reproduced the transition frequencies within the accuracy of the experimental measurements. For ν₄ and ν₂ + ν₄ bands the standard deviation of the calculated spectrum is about four times larger than the measurements accuracy: a similar result was found for ν₄ in ¹⁴NH₃ by ?. Urban et al. (J. Mol. Spectrosc.79, 455–495 (1980)). This result suggests that the present treatment takes into account only the most significant part of the rovibration interaction in the doubly degenerate vibrational states of ammonia.     

SnO2/TiO2 mixed oxide particles synthesized in doped premixed H2/O2/Ar flames

SnO₂/TiO₂ mixed oxides with primary particle size ranging between 5 nm d_p 12 nm were synthesized by doping a H₂/O₂/Ar flame with Sn(CH₃)₄ and Ti(OC₃H₇)₄ co-currently. The effects of “flow coordinate,” concentration and flame configurations were investigated with respect to particle size and morphology of the generated mixed oxides. In situ characterization of the mixed oxides was performed using the particle mass spectrometer (PMS), while XRD, TEM, BET and UV–Vis were performed ex situ. Results obtained showed that primary particle size of mixed oxides can be controlled by varying experimental parameters. The mixed oxides have interesting properties compared to those of the pure oxides of TiO₂ and SnO₂, which were also synthesized in flames earlier. Band gap tuning opportunities are possible using mixed oxides.     

Comparison of CH4/H2 and C2H6/H2 inductively coupled plasma etching of ZnO

CH₄/H₂-based discharges are attractive for dry etching of single crystal ZnO because of their non-corrosive nature. We show that substitution of C₂H₆ for CH₄ increases the ZnO etch rate by approximately a factor of 2 both with and without any inert gas additive. The C₂H₆/H₂/Ar mixture provides a strong enhancement over pure Ar sputtering, in sharp contrast to the case of CH₄/H₂/Ar. The threshold ion energy for initiating etching is 42.4 eV for C₂H₆/H₂/Ar and 59.8 eV for CH₄/H₂/Ar. The etched surface morphologies were smooth, independent of the chemistry and the Zn/O ratio in the near-surface region was unchanged within experimental error after etching with both chemistries. The plasma etching improved the band-edge photoluminescence intensity and suppressed the deep level emission from the bulk ZnO under our conditions, due possibly to removal of surface contamination layer.     

Opto-galvanic spectroscopy of some molecules in discharges: NH2, NO2, H2 and N2

The change of the discharge voltage when laser light crossing the discharge is tuned to a molecular transition has been measured. Experiments have been performed in the wavelength region between 570 nm and 620 nm with discharges in NH₃, NO₂, H₂, N₂, O₂ and argon. Transitions from the ground states of NH₂ and NO₂ and transitions from metastable states of N₂ and H₂ have been detected. The spacial dependence of the opto galvanic in a low pressure dc-discharge of H₂ and N₂ has been studied.     

Refractive indices of CuInSe2, CuInSe2 and CuGaTe2

Refractive index dispersion in the photon energy range from 0.5 eV to the fundamental gap energy is determined for CuInSe₂, CuInTe₂ and CuGaTe₂ by measuring and analysing optical transmission spectra of thin films. Control measurements on GaAs thin films demonstrate the reliability of the method.     

Pseudo potential calculations for Na+2, K+2, Rb+2 and Cs+2

A Hellmann type pseudopotential, is used to calculate the six lowest Σ potential energy curves of Na⁺₂, K⁺₂, Rb⁺₂ and Cs⁺₂ molecular ions.     

The influence of interfacial barrier engineering on the resistance switching of In2O3：SnO2/TiO2/In2O3：SnO2 device

The I-V characteristics of In2O3：SnO2/TiO2/In2O3：SnO2 junctions with different interracial barriers are inves- tigated by comparing experiments. A two-step resistance switching process is found for samples with two interfacial barriers produced by specific thermal treatment on the interfaces. The nonsynchronous occurrence of conducting filament formation through the oxide bulk and the reduction in the interracial barrier due to the migration of oxygen vacancies under the electric field is supposed to explain the two-step resistive switching process. The unique switching properties of the device, based on interracial barrier engineering, could be exploited for novel applications in nonvolatile memory devices.     

Al2O3-Y2O3-ZrO2三相复合陶瓷的介电谱研究

采用传统的固相反应法,在1400–1500 ℃下烧结,制备得到Al₂O₃-Y₂O₃-ZrO₂三相复合陶瓷.样品的结构、形貌和电性能分别用X射线衍射(XRD)、扫描电子显微镜(SEM)及介电谱表征.XRD表明此三相复合体系无其他杂相,加入Y₂O₃及ZrO₂后使得Al₂O₃成瓷温度降低;SEM表明此体系晶粒直径为200–500 nm,并且样品随烧结温度的升高而变得更加致密,晶界更加清晰;介电损耗谱中出现峰值弛豫现象,根据Cole-Cole复阻抗谱得出其为非德拜弛豫. 关键词： 2O₃-Y₂O₃-ZrO₂三相陶瓷')" href="#">Al₂O₃-Y₂O₃-ZrO₂三相陶瓷 介电弛豫 阻抗谱 热导率