合成Pb(OH)2/rGO催化剂用于催化转化糖为乳酸

Pb²⁺离子可以作为高效的催化剂用于降解糖为乳酸, 但是为了降低暴露Pb²⁺离子于环境中的风险,最好的办法是把铅固定在一个固体催化剂上．报道了一个简单的制备Pb(PbO₂)/石墨烯复合固体催化剂的方法,可以得到石墨烯负载的纳米铅催化剂,铅颗粒的尺寸在2～5 nm．获得的催化剂可以在水中用于降解葡萄糖、果糖甚至纤维素,产物主要为乳酸．对于果糖、乳酸的产率为58.7% (433 K,2.5 MPa N₂);当直接使用纤维素为原料,无额外酸、碱催化剂时,乳酸的产率可以达到31.7%.     

Chemical reactions of N 2+ ion beams with group IV elements and their oxides

Ion beam studies of the reactions between nitrogen and surfaces of Group IV elements and their oxides resulting in nitride formation are reported. XPS and UPS are used to examine the products induced by 500 eV N ₂⁺ beams on diamond, graphite and elemental Si, Ge, Sn, Pb and their oxides. Nitrogen adds to the graphite in two positions: at the carbon rings and intersitually between the layers of rings. Reaction with Si, Ge and Sn produces nitrides which are similar to those of the type M ₃N ₄. Reaction with oxides forms nitrides with no evidence of nitrate or nitrite formation. The chemical nature of the reaction is supported by identification of the products through energy level shifts and by the agreement with thermodynamic predictions.     

An XPS study and electrical properties of Pb1.1Zr0.53Ti0.47O3/PbO/Si (MFIS) structures according to the substrate temperature of the PbO buffer layer

PbO and PZT thin films were deposited on the p-type (1 0 0) Si substrate by the rf magnetron sputtering method with PbO and Pb_1.1Zr_0.53Ti_0.47O₃ targets for the application of the metal-ferroelectric-insulator-semiconductor (MFIS) structure. The MFIS structures with the PbO buffer layer show the good electric properties including a high memory window and a low leakage current density. The maximum value of the memory window is 2.0 V under the applied voltage of 9 V for the Pt/PZT (200 nm, 400 °C)/PbO (80 nm)/Si structures with the PbO buffer layer deposited at the substrate temperature of 300 °C. From the X-ray photoelectron spectroscopy (XPS) results, we could confirm that the substrate temperature of PbO affects the chemical states of the interface between the PbO buffer layer and Si substrate, which results in the inter-diffusion of Pb and the formation of the intermediate phases (PbSiO₃). And the existence of the undesired SiO₂ layer, which is the low dielectric layer, was confirmed at the surface region of the Si substrate by the XPS depth profile analysis.     

Ferroelectric properties of bilayer structured Pb(Zr0.52Ti0.48)O3/SrBi2Ta2O9 (PZT/SBT) thin films on Pt/TiO2/SiO2/Si substrates

Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films with large remanent polarization and SrBi₂Ta₂O₉ (SBT) thin films with excellent fatigue-resisting characteristic have been widely studied for non-volatile random access memories, respectively. To combine these two advantages_, bilayered Pb(Zr_0.52Ti_0.48)O₃/SrBi₂Ta₂O₉ (PZT/SBT) thin films were fabricated on Pt/TiO₂/SiO₂/Si substrates by chemical solution deposition method. X-ray diffraction patterns revealed that the diffraction peaks of PZT/SBT thin films were completely composed of PZT and SBT, and no other secondary phase was observed. The electrical properties of the bilayered structure PZT/SBT films have been investigated in comparison with pure PZT and SBT films. PZT/SBT bilayered thin films showed larger remanent polarization (2P_r) of 18.37 μC/cm² than pure SBT and less polarization fatigue up to 1 × 10⁹ switching cycles than pure PZT. These results indicated that this bilayered structure of PZT/SBT is a promising material combination for ferroelectric memory applications.     

Controllable microstructures and multiferroic properties of Pb(Zr0.53Ti0.47)O3-CoFe2O4 composite films

1-3 and 2-2 types Pb(Zr_0.53Ti_0.47)O₃-CoFe₂O₄ (PZT-CFO) composite films with controllable microstructures, consisted by CFO nanopillar embedded in PZT matrix and PZT-CFO gratings respectively, have been fabricated on Pt/Ti/SiO₂/Si substrates by combining lithography technology and pulsed laser deposition. X-ray diffraction confirms that the films are well crystallized under optimized postannealing conditions. Scanning electron microscope reveals that the periodic microstructures can be well controlled. Especially, intrinsic room temperature ferroelectric and ferrimagnetic behaviors are observed simultaneously. The structure-properties relationship is discussed. Our results may provide an alternative method to design and prepare multiferroic composite films with controllable microstructures.     

Au/(SiO2/Si/SiO2)纳米双势垒/n+-Si结构的电致发光研究

利用射频磁控溅射方法,在n⁺-Si衬底上淀积SiO₂/Si/SiO_{2纳米双势垒单势阱结构,其中Si层厚度为2至4nm,间隔为0.2nm,邻近n⁺-S i衬底的SiO2层厚度固定为1.5nm,另一SiO2层厚度固定为3nm.为了 对比研究,还制备了Si层厚度为零的结构,即SiO2(4.5nm)/n⁺-Si 结构.在经过600℃氮气下退火30min,正面蒸上半透明Au膜,背面也蒸Au作欧姆接触后,所 有样品都在反向偏置(n^＋-Si的电压高于Au电极的电压)下发光,而在正向偏压 下不发光.在一定的反向偏置下,电流和电致发光强度都随Si层厚度的增加而同步振荡,位 相相同.所有样品的电致发光谱都可分解为相对高度不等的中心位于2.26eV(550nm)和1.85eV (670nm)两个高斯型发光峰.分析指出该结构电致发光的机制是：反向偏压下的强电场使Au/( SiO2/Si/SiO2)纳米双势垒/n⁺-Si结构发生了雪崩击穿 ,产生大量的电子-空穴对,它们在纳米SiO2层中的发光中心(缺陷或杂质)上复 合而发光. 关键词： 电致发光 纳米双势垒 高斯型发光峰 雪崩击穿}     

Structural study of the Lu2Si2O7-Sc2Si2O7 system

Different compositions in the Lu₂Si₂O₇-Sc₂Si₂O₇ system have been synthesized following the ceramic method. All XRD patterns are compatible with the thortveitite structure (β-RE₂Si₂O₇ polymorph). Unit cell parameters change linearly with composition, which indicates a complete solid solubility of Sc₂Si₂O₇ in Lu₂Si₂O₇. ²⁹Si MAS NMR spectra show a decrease of the ²⁹Si chemical shift with increasing Sc content. A correlation reported in the literature to predict ²⁹Si chemical shifts in silicates is applied here to obtain the theoretical variation in ²⁹Si chemical shift values in the system Lu₂Si₂O₇-Sc₂Si₂O₇ and the results compare favourably with the values obtained experimentally. The FWHM values of the ²⁹Si MAS NMR curves indicate a random distribution of Lu and Sc in the structure of the intermediate members. Finally, the IR study of the system confirms the solubility of Sc₂Si₂O₇ in Lu₂Si₂O₇, showing the splitting of several modes in the intermediate members and a linear shift of the frequency on going from one end-member to the other.     

Effect of different annealing methods on ferroelectric properties of 0.95Pb(Sc0.5Ta0.5)O3-0.05PbTiO3 thin films

0.95Pb(Sc_0.5Ta_0.5)O₃-0.05PbTiO₃ thin films were prepared on LaNiO₃/SiO₂/Si substrate by radio frequency magnetron sputtering, and the films were annealed subsequently with repeated many times by two approaches: normal one-step rapid thermal annealing and innovative two-steps rapid thermal annealing. X-ray diffraction demonstrates that all the films were preferred (1 0 0) oriented and an appropriate repeat of annealing process can enhance perovskite phase of the films. Scanning electron microscopy suggests that the films treated by two-steps rapid thermal annealing show crack-free, uniform size grains and dense microstructure. Measurement of remnant polarization and leakage current dependence of electric field confirms that the films treated by two-steps rapid thermal annealing exhibit better ferroelectric properties than the films treated by one-steps rapid thermal annealing. The results reveal that microstructure plays an important role in enhanced ferroelectric properties of the 0.95Pb(Sc_0.5Ta_0.5)O₃-0.05PbTiO₃ thin films.     

(111)择优取向的Pb(Zr0.52Ti0.48)O3铁电薄膜的制备及研究

选用不同浓度的Pb(Zr_0.52Ti_0.48)O₃溶胶，用Sol-gel法在Pt/Ti/SiO₂/Si基片上沉积一层厚度不同的Pb(Zr_0.52Ti_0.48)O₃ (PZT52)过渡层，经400℃烘烤、550℃退火等程序后，再用Sol-gel法在PZT52过渡层上沉积Pb(Zr_0.52Ti_0.48)O _{关键词： PZT铁电薄膜 择优取向 过渡层 剩余极化强度}     

La0.3Sr0.7TiO3模板层对Pb(Zr0.5Ti0.5)O3薄膜的铁电性能增强效应的研究

通过sol-gel法在Si (111) 基片上分别制备了LaNiO₃(LNO)底电极和LaNiO₃/La_0.3Sr_0.7TiO₃ (LNO/LSTO)底电极.然后采用sol-gel 方法，在两种衬底上分别制备了Pb (Zr_0.5Ti_0.5)O₃ (PZT)铁电薄膜.XRD分析表明，两种PZT薄膜均具有钙钛矿结构，且在LNO底电极上的PZT薄膜呈(100) 择优取向，而在LNO/LSTO底电极上的PZT薄膜呈随机取向.铁电性能测试表明，相对LNO衬底上制备的PZT薄膜，在LNO/LSTO底电极上制备的PZT薄膜的剩余极化强度得到了有效的增强，同时矫顽场也增大.介电常数和漏电流的测试表明，LNO/LSTO底电极上制备的PZT薄膜具有大的介电常数和漏电流. 关键词： PZT薄膜 铁电性 漏电流 0.3Sr_0.7TiO₃')" href="#">La_0.3Sr_0.7TiO₃     

Densities of phonon and electron states in V3Si and Cr3Si crystals

The regularization method has been used to solve the non-correct problem of finding out the phonon density of states from the temperature dependence of phonon heat capacity for two single crystals with A15 structure (the superconductor V₃Si and the non-superconductor Cr₃Si. The solution found agrees with the results of neutrongraphical and tunnel study. The electron density of states obtained in a narrow energy range near the Fermi level as the regularized solution of the reverse problem (from the temperature of the electron spin susceptibility) has at the Fermi energy the sharp maximum for V₃Si, but the flat minimum for Cr₃Si.     

Photoelectron spectra of F3SiC2H4Si(CH3)3 molecule using monochromatized synchrotron radiation

A variety of photoelectron spectra for gas phase F₃SiC₂H₄Si(CH₃)₃ molecule have been measured using monochromatized undulator radiation and a hemispherical electrostatic analyzer. Valence photoelectron spectrum shows many peaks for ionization from shallow and deep molecular orbitals in the binding energy region of 9–40 eV. A calculation of ionization energies using the outer valence Green's function method indicates energies in agreement with experimental results below 17.5 eV. Spectra for Si L-shell electron emission show chemical shifts of Si atoms induced from different chemical environments around two Si atoms and also exhibit spin–orbit splitting for 2p photoelectrons. Further photoelectron spectra for C K-shell and F K-shell are discussed in comparison with those of related molecules.     

Molecular-orbital X-rays from 1 GeV 208Pb + 208Pb and 209Bi + 209Bi collisions

We have measured the spectra of continuum X-rays above the characteristic K lines for 4.5 to 4.8 MeV/N ²⁰⁸₈₂Pb → ²⁰⁸₈₂Pb, Pb → Bi, Bi → Pb and Bi → Bi collisions. Above ≈400 keV X-ray energy the spectral shape and intensity agree roughly with calculations of Kirsch et al. for the 1sσ molecular-orbital (MO) X-ray spectrum from Pb-Pb. Deviations from the theory below ≈400 keV suggest transitions to other MO's.     

2-2型磁电复合薄膜CoFe2O4/Pb(Zr0.53Ti0.47)O3静磁耦合

运用溶胶-凝胶法在Pt/Ti/SiO₂/Si基片上旋涂制备了2-2型CoFe₂O₄/Pb(Zr_0.53Ti_0.47)O₃磁电复合薄膜．制备的磁电薄膜结构为基片/PZT/CFO/PZT*/CFO/PZT,通过改变中间层PZT*溶胶的浓度,改变磁性层间距以及静磁耦合的大小．SEM结果表明,复合薄膜结构致密,呈现出界面清晰平整的多层结构．制备的复合薄膜具有较好的铁电与铁磁性能．实验还研究了静磁耦合对薄膜磁电性能的影响,结果表明,随着复合薄膜磁性层间距的减小,静磁耦合效应的增加,磁电电压系数有逐渐增大的趋势.     

Effect of Fe/Pb molar ratio on the structure,magnetic and dielectric properties of PbFe12O19 nanoparticles

In this paper, lead hexaferrite (PbFe₁₂O₁₉) nanoparticles were synthesized by sol-gel method. In order to prepare PbFe₁₂O₁₉ nanoparticles, the metal nitrates with Fe/Pb?=?8, 10, 11, 12, 14 ratios and citric acid were used. The structure, morphology, magnetic, and dielectric properties of PbFe₁₂O₁₉ nanoparticles were characterized by X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), vibrating sample magnetometer (VSM) and LCR meter. XRD results revealed that the samples with Fe/Pb?≤?10 and Fe/Pb?>?10 have single-phase hexaferrite and hematite (α- Fe₂O₃) structures, respectively. As a result, the sample with Fe/Pb?=?10 is single-phase and shows the highest values of the saturation magnetization and remanence magnetization. We found that the values of dielectric constant (ε′) and dielectric loss (ε″) increase with an increase in the Fe/Pb molar ratio from 8 to 12 and then decreases with an increase of Fe/Pb molar ratio to 14. The variation of ac conductivity (σ_ac) with frequency ranging from 1?kHz to 200?kHz showed that electrical conductivity in these ferrites is mainly due to the electron hopping mechanism.     

Zero bias conductance peak enhancement in Bi2Sr2CaCu2O8/Pb tunneling junctions

Recently, there has been tremendous interest on a tunneling feature called zero bias conductance peak (ZBCP) commonly found in high T_csuperconductor tunnel junctions. The interest stemmed from the feature’s root in the d-wave symmetry of high T_csuperconductors. In this paper we will review results of our study on ZBCP within a Pb/Bi₂Sr₂CaCu₂O₈(BSCCO) tunneling junction. This allows us to investigate the intricate interactions between s- and d-wave superconductivity. The ZBCP indeed demonstrates interesting properties when Pb becomes superconducting. We attribute these results to the suppression of the d-wave phase on the surface of BSCCO by the s-wave superconductivity from Pb through a proximity effect. We will also report some recent results on the magnetic field dependence of the ZBCP.     

Synthesis of In-doped Ga2O3 zigzag-shaped nanowires and optical properties

In-doped Ga₂O₃ zigzag-shaped nanowires and undoped Ga₂O₃ nanowires have been synthesized on Si substrate by thermal evaporation of mixed powders of Ga, In₂O₃ and graphite at 1000 °C without using any catalyst via a vapor-solid growth mechanism. The morphologies and microstructures of the products were characterized by field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS) and photoluminescence spectroscopy (PL). The nanowires range from 100 nm to several hundreds of nanometers in diameter and several tens of micrometers in length. A broad emission band from 400 to 700 nm is obtained in the PL spectrum of these nanowires at room temperature. There are two blue-emission peaks centering at 450 and 500 nm, which originate from the oxygen vacancies, gallium vacancies and gallium-oxygen vacancy pairs.     

Microstructural changes in Fe-doped Gd5Si2Ge2

Gd₅Si₂Ge₂-based alloys can exhibit a giant magnetocaloric effect (GMCE); this gives them the potential for use in cooling technologies. It has also been reported that a small addition of iron reduces the hysteresis losses in Gd₅Si₂Ge₂-based alloys, thus increasing the net refrigerating capacity. In this investigation, we have been the first to look at the effect on the microstructure and magnetic properties of Gd₅Si₂Ge₂ resulting from a wide range of substitutions of Si by Fe. The macrostructures of the arc-melted buttons revealed some very unusual surface morphologies, and the analytical results revealed a gradual substitution of the Gd₅(Si,Ge,Fe)₄-type phase by a Gd₅(Si,Ge,Fe)₃-type phase and the presence of three grain-boundary phases, two of which contain substantial amounts of iron. The magnetic measurements indicated that larger amounts of iron reduced the hysteresis losses, but at the same time reduced the Curie temperatures to below lower values that would make the material useful in practice.     

Preparation and characterization of Cd2Nb2O7 thin films on Si substrates

Thin Cd₂Nb₂O₇ films were grown on single-crystal p-type SiO₂/Si substrates by the metallo-organic decomposition (MOD) technique. The films were investigated by X-ray diffraction, X-ray energy-dispersive spectroscopy, and field emission scanning electron microscopy, and showed a single phase (cubic pyrochlore), a crack-free spherical grain structure, and nanoparticles with a mean size of about 68 nm. A Cauchy model was also used in order to obtain the thickness and index of refraction of the stack layers (transparent layer/SiO₂/Si) by spectroscopic ellipsometry (SE). The dielectric constant (K) of the films was calculated to be about 25 from the capacitance-voltage (C-V) measurements.     

Investigation on FR(LT)–FR(HT) phase transition and pyroelectric properties of pulsed laser deposited Pb(Zr0.93Ti0.07)O3 thin films

The preparation process, crystallinity and electrical properties of pulse laser deposited Pb(Zr_xTi_1−x)O₃ (PZT) thin films were investigated in this paper. PZT (x = 0.93) thin film samples deposited at different substrate temperatures were prepared. Si (1 1 0) was the substrate; Ag and YBCO were the top electrode and the bottom electrode respectively. The bottom electrode YBCO was deposited on the Si substrate by pulsed laser deposition (PLD), and then PZT was epitaxially deposited on YBCO also by PLD. After annealing, the top electrode Ag was prepared on PZT by thermal evaporation, and then the Ag/PZT/YBCO/Si structured thin films were obtained. The XRD and the analysis of their electrical characters showed that, when the substrate temperature was elevated from 600 °C to 800 °C, the crystallinity and electrical properties of PZT thin films became better and better, and the F_R(LT)–F_R(HT) phase transition of PZT (x = 0.93) thin films occurred at 62 °C. The PZT film deposited at 800 °C had the best pyroelectric properties, and when the F_R(LT)–F_R(HT) phase transition of this film occurred, the peak value of pyroelectric coefficient (p) was obtained, with a value of 1.96 × 10⁻⁶ C/(cm² K). The PZT film deposited at 800 °C had the highest remnant polarization (P_r) and the lowest coercive field (E_c), with the values of 34.3 μC/cm² and 41.7 kV/cm respectively.