原子力显微镜加工红外微透镜阵列的研究

提出了利用原子力显微镜灰阶阳极氧化方法加工Si、Ge、GaAs等晶体材料为基础的红外微透镜阵列.加工了3×3的红外硅微透镜阵列,微透镜的高度和表面直径重复性误差分别为0.2nm和6.0 nm,微透镜的平均曲率半径为510.8 nm.分析了原子力显微镜加工红外微透镜产生面型结构误差的原因,并提出了减小面型结构误差的方法.利用此种方法加工的折射、衍射和混合红外微透镜阵列可以进一步缩小红外成像系统的尺寸.     

Real-time gray-scale photolithography for fabrication of continuous microstructure

A novel real-time gray-scale photolithography technique for the fabrication of continuous microstructures that uses a LCD panel as a real-time gray-scale mask is presented. The principle of design of the technique is explained, and computer simulation results based on partially coherent imaging theory are given for the patterning of a microlens array and a zigzag grating. An experiment is set up, and a microlens array and a zigzag grating on panchromatic silver halide sensitized gelatin with trypsinase etching are obtained.     

小F数衍射微透镜阵列光学性能研究

本文基于小光点扫描,在国内首次提出了一种测试小F数衍射微透镜阵列光学性能的方法.利用光通信用半导体激光器和探测器建立了一套测试系统,并对所研制的大阵列,小单元尺寸的多相位菲涅耳衍射微透镜阵列的衍射效率和点扩散函数进行了测试.结果表明,衍射微透镜实际衍射光斑比理论衍射受限光斑扩展不大,8相位和16相位石英微透镜的衍射效率分别高达80.2%和87.5%,说明本实验室对多相位的设计理论和制作工艺已基本掌握,满足应用的要求.     

凹折射微透镜阵列的离子束刻蚀制作

利用光刻热熔成形工艺及离子束刻蚀制作 12 8× 12 8元凹微透镜阵列。所制硅及石英凹微透镜的典型基本图形分别为凹球冠形、凹柱形和矩顶凹面形。分析了在光致抗蚀剂柱凹微透镜图形制作过程中的膜系匹配特性 ,与制作该种微透镜有关的光掩模版的主要结构参数 ,以及光致抗蚀剂掩模工艺参数的控制依据等。探讨了在凹微透镜器件制作基础上利用成膜工艺开展平面折射微透镜器件制作的问题。采用扫描电子显微镜 (SEM)和表面轮廓仪测试了所制石英凹微透镜阵列的表面微结构形貌。给出了所制石英凹微透镜阵列远场光学特性的测试结果。     

Photoelectric and electrophysical characteristics of In2S3-SiOx-Si Structures

Results are presented of the investigation of the effect of two oxidation methods of silicon (chemical and anodic) on the electrophysical properties of In₂1S₃-SiO_x-Si structures. It is shown that the change in the potential barrier height in silicon and the properties of the interface depend on the oxidation method. In the development of solar energy photoconverters, preference should be given to structures on n-type silicon with chemical oxide.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 3–6, July, 1985.     

Anodic oxidation during electrostatic bonding

During electrostatic bonding, anodic oxidation of the anode material, for instance silicon, is thought to be the essential step in the bonding mechanism, leading to the formation of a permanent, strong and vacuum-tight bond. Despite the perceived importance of this step in the bonding mechanism of this well-established bonding technique, there is little experimental evidence for anodic oxidation during electrostatic bonding. One reason is that a thin (approximately 10–20?nm) amorphous anodic oxide layer is difficult to detect adjacent to an amorphous cation-depleted glass. Here, silicon–Pyrex and aluminium–Pyrex electrostatic bonds are made and the anodic oxidation process is studied directly using transmission electron microscopy. The consumption of silicon is demonstrated by the movement of the crystalline–amorphous interface compared with a marker under the original silicon–Pyrex interface. The formation of an anodic silica layer can also be demonstrated using electron-energy-loss spectrometry. An amorphous reaction layer 5–20?nm thick is formed during the bonding cycle. For aluminium anode materials bonded at 450°C a nanocrystalline γ-Al₂O₃ reaction layer is formed, which can be readily detected by transmission electron microscopy. At a bonding temperature of 350°C, no such crystalline reaction layer can be detected between Pyrex and aluminium.     

Anodic oxidation of porous silicon bilayers

This paper focuses on the study of the effect of anodic oxidation in porous silicon bilayers composed of two porous layers of different porosities. The order of the two types of layers has been alternated, and the thicknesses and refractive indices have been optically characterized by Fourier transform infrared spectroscopy. The results show that the refractive index of anodic oxidized porous silicon is reduced significantly with respect to just formed porous silicon. It is also observed that the quality of the oxidation is related to the porosity of the inner porous layer of the silicon bilayer structure. This effect is interpreted in terms of quantum size effects.     

用四探针及阳极氧化方法测量硅中扩散层杂质分布

本文讨论了:(1)用阳极氧化法在硅片表面去层的技术;(2)用四探针测量扩散层面电导的方法;(3)用阳极氧化去层及四探针测量面电导方法求得扩散层精细杂质分布。文中着重讨论了实验技术中的实际问题,如如何在阳极氧化过程中取得精细而均匀的去层(300—1500?);如何控制及测量去层厚度;测量面电导及杂质分布时的误差来源及减小误差的措施。以典型的磷在硅中扩散的杂质分布测量为例:扩散深度为4.9μm,测量间距为400—1600?,面电导测量误差估计小于3％,杂质分布误差估计小于20％。简单地提出了一些测量中尚待进一步解决的问题。     

Passivation of defect states in Si-based and GaAs structures

Formation of defect states on semiconductor surfaces, at its interfaces with thin films and in semiconductor volumes is usually predetermined by such parameters as semiconductor growth process, surface treatment procedures, passivation, thin film growth kinetics, etc. This paper presents relation between processes leading to formation of defect states and their passivation in Si and GaAs related semiconductors and structures. Special focus is on oxidation kinetics of yttrium stabilized zirconium/SiO₂/Si and Sm/GaAs structures. Plasma anodic oxidation of yttrium stabilized zirconium based structures reduced size of polycrystalline silicon blocks localised at thin film/Si interface. Samarium deposited before oxidation on GaAs surface led to elimination of EL2 and/or ELO defects in MOS structures. Consequently, results of successful passivation of deep traps of interface region by CN⁻ atomic group using HCN solutions on oxynitride/Si and double oxide layer/Si structures are presented and discussed. By our knowledge, we are presenting for the first time the utilization of X-ray reflectivity method for determination of both density of SiO₂ based multilayer structure and corresponding roughnesses (interfaces and surfaces), respectively.     

Photoinjection phenomena in a silicon-silcon dioxide system

Silicon-silicon dioxide structures obtained by thermal, anodic, and chemical oxidation of silicon are studied by the photocharge and photoinjection current methods. It is shown that the extent of the fluctuation state tails" near the edges of the SiO₂ forbidden zone is small (0.2 eV). The threshold for negative photocharging of anodic oxide traps is found to decrease with increase in oxide thickness, a fact related to the existence of a nonstoichiometric transition layer between the silicon and silicon dioxide. The effect of hydration and dehydration on negative optical charge of oxide traps is studied, and it is shown that the basis of electron traps is formed by the most hydrated and deformed SiO₄H_n tetrahedra. The possibility of creating electron and hole traps in the oxide layer by doping with metal ions from a solution is demonstrated. It is found that the corresponding defects are also adsorption centers for water molecules by a coordination mechanism.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 3–7, July, 1981.In conclusion, the authors thank V. F. Kiselev for his interest in the study and valuable remarks.     

Fabrication of self-ordered nanohole arrays on Si by localized anodization and subsequent chemical etching

Nanohole arrays with a 60 nm hole periodicity were fabricated on a Si substrate by the anodization of an aluminum film sputtered on a Si substrate in sulfuric acid and subsequent chemical etching. The transfer of the nanoporous pattern of anodic alumina into the Si substrate was achieved by the selective removal of silicon oxide, which was produced by the anodic oxidation of the underlying Si substrate through the anodic porous alumina used as a mask.     

Varifocal liquid-filled microlens operated by an electroactive polymer actuator

We designed, fabricated, and characterized varifocal microlenses, whose focal length varies along with the deformation of a transparent elastomer membrane under hydraulic pressure tailored by electroactive polymer actuators. The microfluidic channel of the microlens was designed to be embedded between silicon and glass so that transient fluctuation of the optical fluid and elastomer membrane is effectively suppressed, and thus the microlens is optically stabilized in a reduced time. Multilayered poly(vinylidene fluoride-trifluoroethylene-clorotrifluoroethylene) actuators were also developed and integrated onto the microfluidic chambers. We demonstrated that the developed microlenses are suitable for use in microimaging systems to make their foci tunable.     

Preparation of ion-implanted silicon for transmission electron microscopy

This paper deals with the preparation technique of thin foils (below 5000 Å) for the transmission electron microscopy from silicon implanted by N⁺ ions. Mechanical and chemical thinning and anodic oxidation techniques are discussed and selective etching of the surface of silicon for the purposes of the replica technique is noted. Compositions of etching solutions and other experimental parameters are mentioned. The results are demonstrated on electron micrographs showing the radiation damage due to ion implantation in silicon.     

Kinetics of the formation of oxide nanostructures on <Emphasis Type="Italic">n</Emphasis>-Si in the potentiostatic mode of water anodization

The results of studies of the morphological properties of an oxide film obtained by the anodic oxidation of a n-Si(100) single-crystal silicon wafer in distilled water in the potentiostatic mode are presented. Irrespective of the value of the applied potential and the anodic treatment time, the oxide coating is always formed as separate islands, interconnected by a thin layer of barrier oxide, the thickness of which is adjusted by the pH value of an alkaline solution (pH > 7) produced in a limited area of local oxidation.     

Optical Transmission Spectra of Anodic Aluminum Oxide Membranes with a Dual Layer-by-Layer Structure

By adjusting the anodization voltage periodically in the process of electrochemical oxidation of Muminum and subsequent chemical etching, anodic aluminum oxide membranes with a dual periodic layer-by-layer structure are prepared. Optical transmission spectra analyses prove that the dip position is dependent on the thickness of the layer and can be easily adjusted by the anodization voltage according to the Bragg-Snell formula. This result implies that the position and width of the stop band and the pass band in the visible and near infrared wavelength region can be designed and prepared arbitrarily. It is expected that these kinds of anodic aluminum oxide membranes may find applications in the fabrication of various optical devices.     

Thermal emission of macroporous silicon chirped photonic crystals

In this Letter we report on the thermal properties of macroporous silicon photonic crystals with the unit cell gradually varied along the pore axis. We show experimentally that arbitrarily large omnidirectional total-reflectance bands can be produced with such structures. We also demonstrate that those bands can be effectively used to reduce thermal radiation in large spectral bands.     

Design, characterization and evaluation of high performance 2.8 μm pitch zero space microlens

Utilization of the zero space microlens technology can significantly improve the image quality of CMOS sensors. In this study, we present systematical data of design, simulation, characterization and silicon level testing during the initial stage of development of the zero space microlens based CMOS imaging technology. The optimal structure of zero space microlens was obtained based on the simulation results. Sample CMOS image sensors with a 2.8 μm pitch zero space microlens above each pixel have been successfully fabricated based on 0.18 μm CMOS technology. Using AFM (atomic force microscopy) and sensor test platform, the structural and optical properties of both space microlens and zero space microlens have been characterized, and their performances have been evaluated respectively. Both AFM results and silicon tests have demonstrated that the 2.8 μm pitch zero space microlens can remarkably improve the pixel sensitivity and pixel array non-uniformity, and reduce the optical crosstalk. Compared to the space 2.8 μm square microlens, the zero space microlens shows 78.83% (68.42% and 75.93%) enhancement of photosensitivity and increment of pixel non-uniformity up to 20% (45.6% and 30.77%) for R (G and B), and reduction of the optical crosstalk up to 44.49%, under 45 lux light and 30 ms exposure time. In addition, the zero space microlens has also shown a great potential in further reducing pixel size down to less than 2.8 μm and meanwhile improving imaging performance of CMOS image sensors.     

Hotspot decorations map plasmonic patterns with the resolution of scanning probe techniques

In high definition mapping of the plasmonic patterns on the surfaces of nanostructures, the diffraction limit of light remains an important obstacle. Here we demonstrate that this diffraction limit can be completely circumvented. We show that upon illuminating nanostructures made of nickel and palladium, the resulting surface-plasmon pattern is imprinted on the structures themselves; the hotspots (regions of local field enhancement) are decorated with overgrowths, allowing for their subsequent imaging with scanning-probe techniques. The resulting resolution of plasmon pattern imaging is correspondingly improved.     

Discrete tunneling in electronic transport properties of nanograined porous silicon and similar heterophase systems

Experimental data obtained in the study of transverse current transport in a number of nanosized grained or similar media, such as porous silicon layers, anodic silicon oxide layers, and silicon nitride layers prepared by ion implantation of nitrogen into silicon, have been analyzed within the theory of discrete tunneling. It has been demonstrated that the measurements of current-voltage characteristics of diode structures with dielectric interlayers and embedded grains make it possible to obtain useful information on the character and sizes of grains or quantum dots in the nanosized grained medium. Amorphous dielectrics can be considered a grained medium with nanosized composition fluctuations. The current-voltage characteristics of real structures are determined by both the current nonlinearity associated with the charge carrier injection and the field nonlinearity caused by the Coulomb blockade of tunneling.     

Investigations of ZnSe-ZnO structures,by using the electrooptical and Auger depth profile methods

Analysis of the ZnSe-oxide structures formed by anodic oxidation has been performed. Electrooptical properties were analysed as a function of parameters of anodic oxidation by means of the electroluminescence method. Surface properties of ZnSe with a ZnO layer were investigated by using an Auger depth profile analysis. A theoretical treatment of the results based upon the application of thermionic and tunneling theories to double Schottky diodes was assumed.