间隔层对双发光层白色有机电致发光器件性能的影响

采用蓝色bis (FIrpic)和黄色bis iridium(acetylacetonate) 两种磷光染料,制备了双发光层结构的白色有机电致发光器件,器件结构为ITO/TAPC (30 nm)/host: (t-bt)₂Ir(acac) /spacer (x nm)/host: FIrpic (15 nm, 8%)/Bphen (40 nm)/Mg∶Ag (200 nm)。分别选用p型1,1-bis cyclohexane (TAPC)和n型tris borane (3TPYMB)作为主体材料制备了两种类型的器件,通过在两个发光层之间加入一层较薄的间隔层进行器件优化。结果表明,加入间隔层之后,器件性能得到提高,获得了色稳定性较好的白光器件。当主体为TAPC时,使用间隔层后器件取得最大亮度为19 550 cd/m²,最大电流效率为8.3 cd/A;当主体为3TPYMB时,使用间隔层后器件的最大亮度为1 950 cd/m²,最大电流效率为30.7 cd/A。实验结果表明,器件性能的提高,是由于加入了间隔层之后载流子复合区域拓宽,促进了发光层中电子和空穴的平衡。     

Electroluminescence performance of organic light-emitting devices with KCl inside hole transport layer

A new multilayer organic light-emitting device (OLED) is fabricated by inserting kalium chloride (KCl) thin layer (1 nm) into hole transport layer (HTL). It has the configuration of ITO/NPB(15 nm)/KCl(1 nm)/NPB(25 nm)/Alq₃(60 nm)/KCl(1 nm)/Al. The electroluminescence (EL) result shows that the performance of the novel device has obviously improvement compared with the normal structure (ITO/NPB(40 nm)/Alq₃(60 nm)/KCl(1 nm)/Al). The EL and efficiency are about 1.4 and 1.3 times than that of conventional device. The suggested mechanism is that the KCl layer in N,N′-diphenyl-N,N′-bis(1-napthyl–phenyl)-1,1′-biphenyl-4,4′-diamine (NPB) can block the holes of NPB and then balance the holes and electrons. The better recombination of holes and electrons is beneficial to the enhancing properties of OLED.     

激基复合物给体作间隔层对激子复合区域的调节

为研究激基复合物器件激子复合区域的变化,在TPD/BPhen界面可形成激基复合物发光的基础上,以Ir(pq)2(acac)为探测层,制备器件ITO/Mo O_3(2.5 nm)/TPD((40-x)nm)/Ir(pq)2(acac)(0.5 nm)/TPD(x,x=0,3,6,10 nm)/BPhen(40 nm)/Cs2CO_3/Al,其中靠近BPhen的TPD称之为间隔层。电致发光光谱表明,该组器件的激子复合区域主要位于Ir(pq)2(acac)薄层和TPD/BPhen界面,分别发射595 nm和478 nm的光。随着TPD间隔层厚度的增加和电压的升高,发光区域向激基复合物区域(TPD/BPhen界面)移动,即更多的电子和空穴在TPD/BPhen界面形成激基复合物发光,Ir(pq)2(acac)发光减弱。当间隔层厚度由0 nm增至10nm时,6 V电压下的Ir(pq)2(acac)和激基复合物发光强度的比值由44降至1.5。对于间隔层厚度为6 nm的器件,Ir(pq)2(acac)和激基复合物发光强度的比值由6 V时的2.8降至10 V时的1.0。由此可见,激基复合物给体作间隔层能有效调节激子复合区域。     

The roles of zinc selenide sandwiched between organic layers and its applications in white light-emitting diodes

In this paper, the roles of zinc selenide (ZnSe) sandwiched between organic layers, i.e. organic/ZnSe/aluminum quinoline (Alq₃), have been studied by varying device structure. A broad band emission was observed from ITO/poly(N-vinylcarbazole)(PVK)(80 nm)/ZnSe(120 nm)/ Alq₃(15 nm)/Al under electric fields and it combined the emissions from the bulk of PVK, ZnSe and Alq₃, however, emission from only Alq₃ was observed from trilayer device ITO/N,N^′-bis-(1-naphthyl)-N,N^′-diphenyl-1, 1^′-biphenyl-4, 4^′-diamine (NPB) (40 nm)/ZnSe(120 nm)/ Alq₃(15 nm)/Al. Consequently the luminescence mechanism in the ZnSe layer is suggested to be charge carrier injection and recombination. By thermal co-evaporating Alq₃ and 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB), we get white light emission with a Commission Internationale de l’E clairage (C.I.E) co-ordinates of (0.32, 0.38) from device ITO/PVK(80 nm)/ZnSe(120 nm)/ Alq₃:DCJTB(0.5 wt% DCJTB)(15 nm)/Al at 15 V and the device performs stably with increasing applied voltages.     

有机电致发光器件的动态电学特性

利用交流阻抗谱技术，研究了有机发光二极管ITO/Alq₃(90 nm)/Al的载流子传导机理.根据器件对不同频率的响应曲线及其等效电路模型，该器件可看作是由并联的电阻R_p和电容C_p再与电阻R_s串联而成，并根据实验数据求出了R_p，C_p和R_s的数值.实验结果表明器件的载流子传输机理属于指数分布式的陷阱电荷限制电流，其介电弛豫时间随偏压的增加而逐渐减小. 关键词： 3')" href="#">Alq₃ 陷阱电荷限制电流 交流阻抗谱 有机发光二极管     

Charge carriers bulk recombination instead of electroplex emission after their tunneling through hole-blocking layer in OLEDs

Charge carriers bulk recombination instead of forming electroplex after their tunneling through a hole-blocking layer, i.e. 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), in organic electroluminescence (EL) device ITO/poly-(N-vinyl-carbazole)(PVK)/BCP/tris(8-hydroxyquinoline) aluminum (Alq₃)/Al is reported. By changing the thickness of BCP layer, one can find that high electric fields enhance the tunneling process of holes accumulated at the PVK/BCP interface into BCP layer instead of forming “electroplex emission” as reported earlier in literatures. Our experimental data show that charge carriers bulk recombination takes place in both PVK layer and BCP layer, and even in Alq₃ layer when BCP layer is thin enough. Further, it is suggested that PVK is the origin of the emission shoulder at 595 nm in the EL spectra of trilayer device ITO/PVK/BCP/Alq₃/Al.     

Enhancing properties of organic light-emitting diodes with LiF inside the hole transport layer

A new device has been made by inserting thin LiF layer in N,N′-diphenyl-N,N′-bis(1-napthyl–phenyl)-1, 1′-biphenyl-4,4′-diamine (NPB), which has a configuration of ITO/NPB(20 nm)/LiF(0.5 nm)/NPB(20 nm)/Alq₃(60 nm)/LiF(0.5 nm)/Al. Compared with normal device, the device inserted LiF layer inside NPB (HTL) can improve its performance. The luminance and efficiency is about 1.4 and 1.3 folds high of the conventional structure, respectively. The suggestion mechanism is that the LiF in the NPB layer can block holes of NPB, and balance the holes and electrons. Consequently, there are more excitons formed to boost the diode’s luminance and efficiency. And it may offer some valuable references for OLED’s structure.     

利用C_(60)和CuPc形成的有机半导体异质结作为阳极修饰层实现高效的磷光有机发光二极管

利用C_(60)和Cu Pc形成有机半导体异质结作为阳极ITO修饰层,制备了高效绿色磷光有机发光二极管(OLEDs)。与常规MoO_3阳极修饰层相比,C_(60)(5 nm)/Cu Pc(25 nm)面异质结修饰器件的最大电流效率和外量子效率(EQE)提高了12%和11%,分别为60 cd/A和16.8%;而Cu Pc∶C_(60)(30 nm,50%)体异质结修饰器件则提高了26%和27%,分别为67 cd/A和19.3%。高的器件效率一方面归因于C_(60)与Cu Pc异质结界面处积累的电荷会在电压的作用下形成高效的电荷分离和空穴注入,另一方面归因于异质结具有吸收绿光光子形成光生载流子的光伏效应。利用Cu Pc∶C_(60)体异质结修饰阳极的器件由于具有更高效的电荷积累、更合适的空穴传输性、更平衡的载流子复合和更好的光伏特性,器件效率要比C_(60)/Cu Pc更优。研究表明,这种基于C_(60)与Cu Pc的有机半导体异质结可作为优越的ITO阳极修饰层。     

Enhanced performance of light-emitting diodes based on a nanocomposite of dehydrated nanotube titanic acid and poly(vinylcarbazole) (PVK)

Performance of light-emitting diodes (LEDs) based on a nanocomposite of dehydrated nanotube titanic acid (DNTA) and poly(vinylcarbazole) (PVK) as emissive layer, i.e., ITO/PVK:DNTA(2 wt%)(100 nm)/BCP(30 nm)/Alq₃(10 nm)/LiF(1 nm)/Al [device D₂], was reported. By investigation of the luminance and electric characteristics of the device, we found that the performance of device D₂ was greatly improved. The recombination zone changed evidently due to the improvement of holes mobility. Compared with those devices without incorporating DNTA, both the maximum luminance and the electroluminescent efficiency of the device D₂ can be improved by a factor of three. Furthermore, the turn-on voltage of the device decreased dramatically.     

插入电荷控制层对蓝色OLED发光性能的提高

用蓝色有机荧光材料N⁶,N⁶,N¹²,N¹²-tetrap-tolylchrysene-6,12-diamine （DNCA）作为发光层,在发光层中间以及发光层与电子传输层之间插入2-methyl-9,10-di（2-napthyl）anthracene （MADN） 和9,10-di（2-naphthyl）anthracene （ADN） 作为电荷控制层,制备了结构为ITO/NPB（40 nm）/DNCA（15 nm）/MADN（3 nm）/DNCA（15 nm）/ADN（3 nm）/Bphen（30 nm）/LiF（0.8 nm）/Al（120 nm）的蓝色有机电致发光器件（OLED）。该器件的最大电流效率和最大亮度分别为5.6 cd/A和23 310 cd/m²。与传统的单发光层器件相比,最大电流效率和最大亮度分别提高了70%和87%。器件发光性能的提高可归结于两个电荷控制层在整个器件中的协同作用。第一电荷控制层MADN的作用主要是将发光层区域分成两个部分,从而扩大了激子在发光层中的复合区域;第二电荷控制层ADN可以有效地将空穴限制在发光层中,避免了激子在电子传输层中形成的无辐射跃迁从而提高了器件的发光性能。     

基于ZnSe的有机-无机异质结电致发光器件

以电子束蒸发的方法制备硒化锌(ZnSe)薄膜，研究了基于ZnSe的有机-无机异质结电致发光器件.在双层器件ITO/ZnSe(50nm)/Alq₃(12nm)/Al中看到了峰值位于578nm的ZnSe电致发光，却很难得到单层器件ITO/ZnSe(50—120nm)/Al的电致发光；在此基础上进一步引入有机空穴传输层(HTL)，通过改变器件的结构，讨论了ZnSe对有机-无机异质结器件ITO/HTL/ZnSe/Alq₃/Al电致发光特性的影响.其电致发光光谱的研究结果证实了ZnSe在器件中的作用：ZnSe既起传输电子的作用，也起到传输空穴的作用，还作为发光层.并对ZnSe的发光机理进行了讨论. 关键词： 硒化锌 有机-无机异质结 电致发光 空穴传输层     

基于铱配合物材料的高效高稳定性有机发光二极管

使用基于重金属Ir的新磷光材料(tpbi)₂Ir(acac)，制备了多层结构有机发光二极管器件: ITO/CuPc (40 nm)/α-NPD (45 nm)/CBP: (tpbi)₂Ir(acac) (3%, 30nm)/BCP(20 nm)/Alq₃ (20 nm)/LiF (1 nm)/Al (100 nm).测试了材料的寿命、光谱吸收性质和器件的I-V-L特性.器件在低电压下电流符合热发射注入模型，高电压下I-V呈线形关系.不同偏压下器件发光光谱稳定，多峰拟合结果表明器件光谱由α-NPD发光峰(450 nm)，(tpbi)₂Ir(acac)主发光峰(518 nm)和肩峰(543 nm)构成.驱动电压为6 V时，器件效率达到最大12.1 lm/W，此时亮度为136 cd/m²，器件亮度最大为13500 cd/m²，此时效率为0.584 lm/W. 关键词： 有机发光二极管 磷光 效率 I-V-L特性')" href="#">I-V-L特性 光谱     

Low driving voltage in an organic light-emitting diode using MoO3/NPB multiple quantum well structure in a hole transport layer

The driving voltage of an organic light-emitting diode(OLED) is lowered by employing molybdenum trioxide(MoO3)/N,N’-bis(naphthalene-1-yl)-N,N’-bis(phe-nyl)-benzidine(NPB) multiple quantum well(MQW) structure in the hole transport layer.For the device with double quantum well(DQW) structure of ITO/[MoO3(2.5 nm)/NPB(20 nm)]2/Alq3(50 nm)/LiF(0.8 nm)/Al(120 nm)],the turn-on voltage is reduced to 2.8 V,which is lowered by 0.4 V compared with that of the control device(without MQW structures),and the driving voltage is 5.6 V,which is reduced by 1 V compared with that of the control device at the 1000 cd/m2.In this work,the enhancement of the injection and transport ability for holes could reduce the driving voltage for the device with MQW structure,which is attributed not only to the reduced energy barrier between ITO and NPB,but also to the forming charge transfer complex between MoO3 and NPB induced by the interfacial doping effect of MoO3.     

采用瞬态电致发光研究磷光掺杂体系发光瞬时过冲的发射机理

掺杂型有机电致发光器件中载流子累积、载流子复合等物理过程的深入了解对提高器件效率和稳定性有重要作用。通过瞬态电致发光测量可以研究掺杂型有机电致发光器件内部载流子累积。对结构为: ITO/NPB(30 nm)/host: Ir(ppy)₃/BCP(10 nm)/Alq₃(20 nm)/LiF(0.7 nm)/Al(100 nm)的器件分别研究主体材料以及客体掺杂浓度变化对有机掺杂型器件瞬态发光行为的影响。实验发现,当单脉冲驱动电压关闭后,只有TAZ: Ir(ppy)₃掺杂器件出现发光瞬时过冲现象,即发光强度衰减到一定时间时突然增强;且随着客体掺杂浓度的增加,瞬时过冲强度逐渐增强。通过分析TAZ: Ir(ppy)₃掺杂器件的瞬时过冲强度对主体材料与掺杂浓度的依赖关系,进一步发现,瞬时过冲效应强度主要受限于发光层内部积累的电子载流子;TAZ: Ir(ppy)₃发光层内电子容易被客体材料分子俘获并积累,电场突变时陷阱电子容易跳跃到主体材料上并与主体材料上积累的空穴形成激子,激子能量传递到客体材料上并复合发光继而出现发光强度的瞬时过冲现象。研究发光瞬时过冲行为可探究器件发光层内的载流子和激子的动态行为,有利于指导器件的设计,从而减少积累电荷的影响,提高器件的性能。     

多层结构的阴极修饰层对有机电致发光器件的性能改善

为提高有机电致发光器件（OLEDs）的阴极电子注入效率,我们设计了新型的阴极杂化修饰层,其结构为Bphen∶LiF/Al/MoO₃,将其应用到器件ITO/NPB/Alq₃/Al中,参考器件的电子注入层选用传统材料LiF。实验研究表明,与传统的阴极修饰层LiF相比,基于这种杂化结构的阴极修饰层非常有效。测试了器件的电致发光光谱（EL谱）,其峰值位于534 nm,发光来自于Alq₃,实验中我们可以观察到明亮的绿色发光。将其与传统参考器件的EL谱进行对比,在电流密度40 mA·cm-2下,两个器件的电致发光光谱是一致的。在0～100 mA·cm-2范围内,对器件的EL谱进行了测试。实验结果表明,随着电流密度的增加,器件的发光增强,但是EL谱的形状和谱峰的位置是固定不变的。与参考器件对比,基于杂化修饰层的器件的发光性能更好。研究表明,杂化修饰层的最佳参数为Bphen∶LiF(5 nm; 6%)/Al(1 nm)/MoO₃(5 nm),在测试范围内,器件的最大电流效率和最大功率效率分别为4.28 cd·A-1和2.19 lm·W-1,相比参考器件提高了25.5%和23.7%。器件的电流密度-电压特性曲线表明阴极杂化修饰层可以增强电子的注入,使器件中的载流子更加平衡,从而提高了器件的发光性能。从两个角度对器件效率的增强进行了理论方面的论证。一方面利用阴极杂化修饰层的作用机制来解释。在HML中,LiF能填充Bphen的电子陷阱,增强电流的注入,同时HML也能限制空穴的传输,减小空穴电流。另一方面从电荷平衡因子的角度,HML增强了电子的注入,使得器件的电荷平衡因子增大,空穴和电子的平衡性更好。实验研究表明,阴极杂化修饰层很好地增强了器件的效率。     

NPB厚度对异质结OLED载流子复合区域的调控

通过调控p型半导体N,N′-bis(naphthalen-1-y)-N,N′-bis(phenyl)benzidine(NPB)层的厚度,制备了结构为ITO/NPB/aluminum(Ⅲ)bis(2-methyl-8-quinolinato)-4-phenylphenolate(BAlq)/NPB(0~18nm)/tri-(8-hydroxyquinoline)-aluminum(Alq₃)/Mg:Ag的多层有机电致发光器件.分析结果表明,在该类异质结器件中,NPB不仅可以作为空穴传输材料,在适当的厚度范围内,它还可以起到调控载流子复合区域的作用;当NPB厚度在0~18nm之间变化时,随着其厚度增加器件发光颜色可由蓝色变为绿色.通过器件发光光谱的表征可以得知,器件的载流子复合区域相应地由BAlq层转移至Alq₃层.     

Low driving voltage in organic light-emitting diode using MoO3/NPB multiple quantum well structure in hole transport layer

Driving voltage of organic light-emitting diode (OLED) is lowered by employing molybdenum trioxide (MoO₃)/N, N'-bis(naphthalene-1-yl)-N,N'-bis(phe-nyl)-benzidine (NPB) multiple quantum well (MQW) structure in hole transport layer. For the device with double quantum well (DQW) structure of ITO/ [MoO₃ (2.5 nm)/NPB (20 nm)]₂/Alq₃(50 nm)/LiF (0.8 nm)/Al (120 nm)], the turn-on voltage is reduced to 2.8 V, which is lowered by 0.4 V compared with that of the control device (without MQW structures), the driving voltage is 5.6 V, which is reduced by 1 V compared with that of the control device at the 1000 cd/m². In this work, the enhancement of the injection and transport ability for holes could reduce the driving voltage for the device with MQW structure, which is attributed not only to the reducing energy barrier between ITO and NPB, but also to the forming charge transfer complex between MoO₃ and NPB induced by the interfacial doping effect of MoO₃.     

间隔层对红绿磷光有机电致发光器件发光性能的影响

制备了结构为ITO/MoO₃(40 nm)/NPB(40 nm)/TCTA(10 nm)/CBP∶GIr1(14%)∶R-4B(2%)(20 nm) /间隔层(3 nm)/ CBP∶GIr1(14%)∶R-4B(2%)(10 nm)/BCP(10 nm)/Alq₃(40 nm)/LiF(1 nm)/Al(100 nm) 的有机电致发光器件,间隔层分别为CBP,TCTA,TPBI和BCP,GIr1和R-4B分别为绿红磷光材料。通过加入不同间隔层来调控载流子和激子在发光层内的分布并研究了其对器件发光性能的影响。研究表明TCTA,TPBI和BCP分别作为间隔层的器件较CBP为间隔层的参考器件,电压为6 V时,电流效率分别高出59%,79%和93%,以BCP为间隔层的器件效率最高达到22.58 cd·A-1;TPBI和BCP为间隔层相对于以TCTA为间隔层的器件,在较高的电流密度下,效率滚降更小。分析原因TCTA间隔层较高的LUMO能级和三线态能量将电子和激子限制在较窄的复合区域,提高了载流子相遇形成激子的概率,在较高电流密度下猝灭也更严重;TPBI和BCP由于具有较高的HOMO能级和电子传输能力,拓宽了激子的复合区域。间隔层引起电子或空穴的累积,形成较高的空间电场,有利于发光层相应载流子的注入与传输。由于发光层掺杂方式为红绿共掺,器件均获得了较好的色坐标稳定性。     

发光层和空穴传输层对白色电致发光器件性能的影响

利用电子传输性能良好的苯并噻唑螯合锌(Zn(BTZ)₂)作为蓝光层，通过设计不同类型的空穴传输层并试验不同厚度的发光层后，制作了一种最佳厚度的双发光层白色电致发光器件：氧化铟锡(ITO)/N-N′-双(3-甲基苯基)-N-N′-二苯基-1-1′-二苯基-4-4′-二胺(TPD)∶N,N′-二(1-萘基)-N,N′-二苯基-1,1′-联苯-4-4′-二胺(NPB)(1∶0.0 关键词： 厚度 空穴传输层 白光 载流子     

基于MoO3/Ag/MoO3透明阳极的顶发射OLED的模拟计算与制备

运用传输矩阵法和正交分析法模拟计算出MoO₃/Ag/MoO₃透明电极的最佳厚度,采用镀膜实验验证模拟计算的准确性,制备了一系列不同MoO₃膜厚度和Ag膜厚度的透明电极。然后,制备了一系列顶发射有机电致发光器件:铝/氟化锂(LiF)/三(8-羟基喹啉)铝(Alq₃)/N,N'-二苯基-N,N'-(1-萘基)-1,1'-联苯-4,4'-二胺/三氧化钼(MoO₃)/银(Ag)/三氧化钼(MoO₃),来进一步验证模拟计算运用在器件制备中的准确性。MoO₃(10 nm)/Ag(10 nm)/MoO₃(25 nm)在532 nm处的透射率达到最大值88.256%,以该透明电极制备的器件与参考器件相比,性能有了明显提高,最大亮度和最大效率分别为20 076 cd/m²和4.03 cd/A,提高了18.5%和56%。器件性能的提高归因于顶发射OLED器件透射率的提高和MoO₃对空穴注入能力的提升。