Behavior features of phononless hopping conductivity in the vicinity of the crossover from the linear to quadratic frequency dependence

It was shown that the Coulomb interaction between electrons of “active” (resonance) pairs plays a major role in a wide frequency range. Therefore, the conventional approach to the calculation of the super-linearity of the frequency dependence of ac conductivity, based on the single-particle density of states with a Coulomb gap, is inapplicable to the calculation of high-frequency phononless conductivity. The observed superlinearity of the frequency dependence of the phononless hopping conductivity can manifest itself immediately in the region of the crossover from the linear to quadratic frequency dependence of the conductivity.     

Frequency dependence of low-temperature phononless conductivity in disordered systems

The frequency dependence of resonant phononless hopping conductivity in disordered systems with pointlike centers of localization in the low-temperature limit is considered within the framework of the pair approximation. It is shown that the existing theory that predicts the power-mode frequency dependence of the low-frequency phononless hopping conductivity σ(ω) and a transition from linear to quadratic dependence (crossover) when frequency increases may become invalid, and the quadratic frequency dependence may never manifest itself at all.     

The effect of electron state hybridization on the frequency dependence of hopping conductivity in disordered systems

The effect of electron state hybridization on phononless hopping conductivity in a disordered system of point localization centers in the intermediate frequency range corresponding to electron transitions to distant centers is discussed. When the basis of the atom-type localized functions is applied, with the hybridization of the wave functions of the distant centers not being taken into account, the frequency dependence of phononless conductivity is shown to be superlinear and monotonic in a wide frequency range. In this case, the kink in the vicinity of a crossover from a linear to a quadratic frequency dependence of the conductivity turns out to be sharper as distinct from the standard theory.     

The special features of the frequency dependence of phononless hopping conduction

Within the framework of perturbation theory the imaginary part of the phononless conduction of a lightly doped compensated semiconductor is calculated. It is shown that when the basis of localized atomic-like functions is used, the superlinear frequency dependence of the real part of the conduction corresponds to the approximately linear frequency dependence of the imaginary part of the conductivity. It has been found that at frequencies below the transition (crossover) frequency ??_cr from the linear to quadratic frequency dependence of the real part of conductivity, the dielectric loss tangent depends weakly on the frequency and it is determined by the relationship of ???_cr to the width of the impurity band. It is shown that measurements of the dielectric loss tangent can provide information on the localization radius of impurity states.     

Phononless hopping conduction in two-dimensional layers of quantum dots

Regularities are studied in charge transport due to the hopping conduction of holes along two-dimensional layers of Ge quantum dots in Si. It is shown that the temperature dependence of the conductivity obeys the Efros-Shklovskii law. It is found that the effective localization radius of charge carriers in quantum dots varies nonmonotonically upon filling quantum dots with holes, which is explained by the successive filling of electron shells. The preexponential factor of the hopping conductivity ceases to depend on temperature at low temperatures (T<10 K) and oscillates as the degree of filling quantum dots with holes varies, assuming values divisible by the conductance quantum e²/h. The results obtained indicate that a transition from phonon-assisted hopping conduction to phononless charge transfer occurs as the temperature decreases. The Coulomb interaction of localized charge carriers has a dominant role in these phononless processes.     

Conductivity of a semiconductor superlattice in a transverse magnetic field

The conductivity of a semiconductor superlattice in a magnetic field perpendicular to the superlattice axis is calculated. The dependence of the conductivity on the magnetic field strength is studied. It is found that there is a magnetic-field range where the resistivity is proportional to the magnetic field strength.     

Magnetic-field-induced insulator-conductor transition in SU(2) quenched lattice gauge theory

We study the correlator of two vector currents in quenched SU(2) lattice gauge theory with a chirally invariant lattice Dirac operator with a constant external magnetic field. It is found that in the confinement phase the correlator of the components of the current parallel to the magnetic field decays much slower than in the absence of a magnetic field, while for other components the correlation length slightly decreases. We apply the maximal entropy method to extract the corresponding spectral function. In the limit of zero frequency this spectral function yields the electric conductivity of quenched theory. We find that in the confinement phase the external magnetic field induces nonzero electric conductivity along the direction of the field, transforming the system from an insulator into an anisotropic conductor. In the deconfinement phase the conductivity does not exhibit any sizable dependence on the magnetic field.     

Soft-potential model and homogeneous width of spectral lines of impurity centers in molecular amorphous media

A study is made to analyze the possibility of using the soft-potential model in optical investigations of disordered molecular systems with impurities. A procedure is suggested for calculating the temperature dependence of the homogeneous width of a phononless line in amorphous media with impurities within the soft-potential model. A calculation is performed of the temperature dependence of the width of a phononless line (optical dephasing) in an amorphous system of polymethyl methacrylate (PMMA) with an addition of tetratert-butylterrylene (TBT) using the parameters of this system known from the literature. Calculations are performed of the contributions to the width of a phononless line due to the interaction of an impurity with tunneling two-level systems, with thermally activated barrier crossings in double-well potentials, and with quasilocal modes of the matrix. The model calculation results are compared with the experimental data on the photon echo for TBT/PMMA, measured by us in the temperature range from 0.3 to 20 K. It is found that the soft-potential model describes qualitatively correctly the temperature behavior of the homogeneous width of a phononless line. In the temperature range of T < 2 K, where the main contribution to optical dephasing is associated with tunneling two-level systems, the predicted values of phononless line width agree well with the experimental data. At higher temperatures, some difference is observed between the prediction and experimental data, which may be due to the effect of impurity on the formation of quasilocal oscillation of the matrix.     

Magnetoconductivity of band-gap graphene

The effect of a magnetic field on the conductivity of band-gap graphene has been investigated. In the case of a non-quantizing field, the magnetic-field dependences of the conductivity and Hall conductivity have been found on the basis of the Boltzmann equation. The formula for the conductivity of graphene in a quantizing magnetic field at low temperatures has been derived within the Born approximation in the scattering potential. It has been shown that the magnetic-field dependence of the conductivity is oscillatory in this case.     

The Nonuniversality of the Frequency Dependence of the Conductivity in Disordered Nanogranulated Systems

Physics of the Solid State - The real part of the high-frequency phononless conductivity is calculated in the pair approximation for a disordered array of densely packed spherical nanogranules. The...     

Temperature effect on the threshold frequency of absorption in a quantum pseudodot

The threshold frequency of absorption in a quantum pseudodot under the influence of temperature and applied magnetic field is calculated. The threshold frequency of absorption is computed as a function of temperature and applied magnetic field. The linear and nonlinear dependence of the absorption threshold frequency on magnetic field and temperature has been showed. According to the results obtained from the present work, we find that the linear and nonlinear dependence of the absorption threshold frequency depends on used range of the temperatures and magnetic fields.     

Dynamical and static spin conductivities in the Heisenberg model on honeycomb lattice: The effects of magnetic long range ordering

We have studied both dynamical and static spin conductivities of Heisenberg antiferromagnet on honeycomb lattice in the presence of a magnetic long range ordering. The effects of spatial anisotropy as weak Dzyaloshinskii–Moriya interaction and next nearest neighbor exchange coupling on the behaviors of conductivities are discussed. A sublattice antiferromagnetic long range ordering has been considered for localized electrons on honeycomb lattice structure. Using Holstein–Primakoff bosonic transformations, the behaviors of spin transport properties have been studied by means of excitation spectrum of mapped bosonic gas. We have found the temperature dependence of static spin conductivity in the field induced gapped spin-polarized phase for various Dzyaloshinskii–Moriya interaction strengths. Furthermore we have studied the frequency dependence of dynamical spin conductivity for various Dzyaloshinskii–Moriya interaction strengths and different next nearest neighbor coupling constants. We find that the height of peak in the temperature dependence of static spin conductivity increases upon increasing the anisotropy parameter. The static spin conductivity is found to be monotonically increasing with anisotropy parameter due to increase of the energy gap in the excitation spectrum. Furthermore we have studied the temperature dependence of the spin conductivity for different next nearest neighbor coupling constants.     

Magnetic field dependence of the hexagonal to isotropic transition temperature of a single-walled carbon nanotubes dispersed lyotropic liquid crystal

We have carried out electrical conductivity studies on a single-walled carbon nanotubes dispersed lyotropic liquid crystal consisting of 50 wt.% TX-100 in water as a function of magnetic field and temperature. This system exhibits hexagonal and isotropic phases on heating. For all the applied magnetic fields, the temperature dependence of electrical conductivity of the carbon nanotubes dispersed lyotropic liquid crystal system exhibits a discontinuous change at the hexagonal to isotropic transition temperature. We find that the magnetic field dependence of the hexagonal to isotropic transition temperature is similar to that of the viscosity of the system. Using photo images of the sample, we find that the carbon nanotubes in the lyotropic liquid crystal form magnetic field dependent aggregates. We find spherical, rod and hook-like nanotube aggregates for low and high applied magnetic fields respectively. These nanotube aggregates alter the viscosity of our system which in turn alters the transition temperatures.     

磁场对La2－xSrxCuO4单晶热导的影响研究

报道了系列欠掺杂La_2-xSr_xCuO₄（x=0063,0070,0 090,0110,0125）单晶的零场和加磁场情况下ab面和c方向的热导率与温度的关系曲线，测量 温度范围从2到45K. 研究发现ab面和c方向的热导率都受到磁场的压制. 而且在磁场 的作用下，热导压制率随温度变化的关系和场致反铁磁有序的增强与温度的依赖关系有高度 相似性. 认为磁场引起的ab面的热导压制主要是电子热导的变化所致，而c方向的 压制则可能主要来源于声子热导的变化，它们均可能与磁场诱导下欠掺杂La_2-x Sr_xCuO₄的某种电荷有序和磁有序的增强密切相关. 关键词： 热导 电荷有序 磁有序     

Semiconductor-metal transition in FeSi in ultrahigh magnetic fields up to 450 T

The magnetic susceptibility and conductivity of single-crystal iron monosilicide are investigated in ultrahigh magnetic fields up to 450 T at a temperature of 77 K. It is found that the conductivity of iron monosilicide increases continuously by two orders of magnitude as the magnetic field increases. The results obtained can be interpreted as a semiconductor-metal transition induced by the magnetic field. The dependence of the conductivity on the magnetic field is described well on the basis of the spin-fluctuation theory. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 4, 326–330 (25 August 1998)     

Separation of the electron localization and interaction in bismuth film resistance

The temperature dependence of the correction to electrical conductivity, Δσ, of Bi thin films (～100–200 Å thick) is measured in the region of the electron localization and interaction effects. The measurements are made without magnetic field and with magnetic fields both perpendicular and parallel to the film surface. Without magnetic field the dependence Δσ(In T) is determined by the total contribution from both effects. As the magnetic field increases, the localization contribution to Δσ decreases and at certain field values it is essentially absent so that the character of Δσ(In T) dependence is determined only by the interaction effect.     

The Complexity Classes of Angular Diagrams of the Metal Conductivity in Strong Magnetic Fields

Journal of Experimental and Theoretical Physics - We consider angular diagrams describing the dependence of the magnetic conductivity of metals on the direction of the magnetic field in rather...     

Slow variation of the electrical conductivity of water under weak permanent magnetic fields

Slow variation (for 10–40 min) of the electrical conductivity of a water cell in weak permanent magnetic fields was studied. Relaxation characteristics and the dependence of the resistivity on a magnetic field ranging between 0.02 and 0.11 G were obtained. It was found that the cell response lags behind magnetic field switching-on and switching-off.     

Calculation of the electrical conductivity of a thin metal layer in the case of different specular reflectances of its surfaces

The local electrical conductivity of a thin metal layer is calculated and modeled with the different specular reflectances of its internal surfaces taken into account. The dependence of the real and imaginary parts of the conductivity on the dimensionless frequency of electron collisions in the volume of the thin layer and on the dimensionless frequency of the external field is analyzed. The kinetic Boltzmann equation is used in the approximation of the electron relaxation time.     

Ultrawide frequency linewidth of the permeability spectra of FeCoN thin film sputtered on the flexible substrate

Analysis shows that it is possible to make use of dispersed magnetic ripple fields to obtain a wide frequency linewidth of permeability spectra of soft magnetic thin films. As-sputtered FeCoN thin film sputtered on flexible Kapton substrate is studied as an example. It has ultrawide frequency linewidths of its resonance peaks in the permeability spectra, compared to its counterpart deposited on Si substrate. The frequency linewidth of FeCoN on Kapton substrate decreases with external magnetic field, showing a different field dependence from that of FeCoN on Si substrate. The ultrawide frequency linewidth and its decrease with external magnetic field are ascribed to the dispersed magnetic ripple fields caused by the flexible substrate. This work shows that the flexible substrate is effective in obtaining a wide frequency linewidth of the permeability spectra of soft magnetic thin films.