The characteristics of surface acoustic waves on AlN/LiNbO3 substrates

The characteristics of surface-acoustic-wave (SAW) devices on various substrates were measured by a network analyzer in the temperature range from 0 to 80 °C. Based on the structure of IDT/AlN/LiNbO₃, it was revealed that the magnitude of the temperature coefficient of frequency (TCF) of a SAW on a LiNbO₃ substrate was significantly decreased due to the thickness increase of AlN thin film deposited on the LiNbO₃ substrate. The TCF of a SAW on an AlN/LiNbO₃ device was measured to be about -51 ppm/°C at h/λ=0.1, where h is the thickness of the AlN film and λ is the wavelength of the SAW. This indicates that the deposition of an AlN film on a LiNbO₃ substrate could improve the temperature stability, as compared with that of a SAW on a LiNbO₃ substrate (-73 ppm/°C). The SAW device on the ST-X quartz is shown to have a positive TCF as the AlN thin film is deposited on the surface of the ST-X quartz. In addition, the phase velocity (V_p) of the SAW on an AlN/LiNbO₃ substrate was significantly increased by the increase of AlN thickness (h/λ). Received: 14 October 2002 / Accepted: 15 October 2002 / Published online: 29 January 2003 RID="*" ID="*"Corresponding author. Fax: +886-7/525-4199, E-mail: ycc@ee.nsysu.edu.tw     

On the effectiveness of lateral excitation of shear modes in AlN layered resonators

We describe the fabrication and frequency characterization of different structures intended for the lateral excitation of shear modes in AlN c-axis-oriented films. AlN films are deposited on moderately doped silicon substrates covered either with partially metallic or fully insulating Bragg mirrors, and on insulating glass plates covered with insulating acoustic reflectors. TiO_x seed layers are used to promote the growth of highly c-axis oriented AlN films, which is confirmed by XRD and SAW measurements. The excitation of the resonant modes is achieved through coplanar Mo electrodes of different geometries defined on top of the AlN films. All the structures analyzed display a clear longitudinal mode travelling at 11,000 m/s, whose excitation is attributed to the direction of the electric field (parallel to the c-axis) below the electrodes; this is enhanced when a conductive plane (metallic layer or Si substrate) is present under the piezoelectric layer. Conversely, only a weak shear resonance (6,350 m/s) is stimulated through the effect of coplanar electrodes, which is explained by the weakness of the electric field strength parallel to the surface between the electrodes. A significantly more effective excitation of shear modes can be achieved by normal excitation of AlN films with tilted c-axis.     

The effect of geometry and post-annealing on surface acoustic wave characteristics of AlN thin films prepared by magnetron sputtering

This paper describes experimental relationship between surface acoustic wave (SAW) properties of two-port SAW resonators based on polycrystalline aluminum nitride (AlN) thin films grown on Si substrates by using a pulsed reactive magnetron sputtering system and their geometry's parameters. Moreover, the influence of post-deposition heat treatment on SAW properties of AlN thin films was investigated at different annealing temperature (600 °C and 900 °C). The measurement results show the number of the inter-digital transducers (IDT) finger pairs (N), the number of reflectors grating pairs (R) and the IDT center-to-center distance (L) related to insertion loss of SAW resonators. The best result of insertion loss was 15.6 dB for SAW resonators with R = 160 pair, N = 5 pair and L = 750 μm. At the same geometry parameters, the SAW velocity and insertion loss were improved slightly after annealing at 600 °C and were worse for the films annealed at 900 °C by changes in the surface morphology and stress on the film.     

Investigation of quasi lateral-field-excitation on (yxl)-17° LiNbO3 single crystal

Quasi lateral-field-excitation (LFE) on LiNbO₃ crystal is investigated both theoretically and experimentally. It is found that when the driving electric field direction is parallel to the crystallographic X-axis of the piezoelectric substrate, (yxl)-17° LiNbO₃ LFE bulk acoustic wave devices work on quasi-LFE mode. The experimental results agreed with the theoretical prediction well. The results provide the cut of LiNbO₃ crystal for quasi-LFE bulk acoustic wave devices, which is important for designing high performance LFE sensors on LiNbO₃ substrates.     

Influence of substrate crystallography on the room temperature synthesis of AlN thin films by reactive sputtering

A pulsed DC reactive ion beam sputtering system has been used to synthesize aluminium nitride (AlN) thin films at room temperature by reactive sputtering. After systematic study of the processing variables, high-quality polycrystalline films with preferred c-axis orientation have been grown successfully on silicon and Au/Si substrates with an Al target under a N₂/(N₂ + Ar) gas flow ratio of 55%, 2 mTorr processing pressure and keeping the temperature of the substrate holder at room temperature. The crystalline quality of the AlN layer as well as the influence of the substrate crystallography on the AlN orientation has been characterized by high-resolution X-ray diffraction (HR-XRD). Best ω-FWHM (Full Width at Half Maximum) values of the (0 0 0 2) reflection rocking curve in the 1 μm thick AlN layers are 1.3°. Atomic Force Microscopy (AFM) measurements have been used to study the surface morphology of the AlN layer and Transmission Electron Microscopy (TEM) measurements to investigate the AlN/substrate interaction. AlN grew off-axis from the Si substrate but on-axis to the surface normal. When the AlN thin film is deposited on top of an Au layer, it grows along the [0 0 0 1] direction but showing a two-domain structure with two in-plane orientations rotated 30° between them.     

Graphene/LiNbO3 surface acoustic wave device based relative humidity sensor

This study described relative humidity (RH) sensing using a graphene/128° YX LiNbO₃ surface acoustic wave (SAW) device. The resonant frequency of the device decreased in a two-stage manner as the RH increased. For a low RH range (RH < 50%), a frequency downshift of 1.38 kHz per 1% RH change was observed. This was attributed to mass loading of the SAW propagation surface due to the adsorption of water molecules by the graphene surface. For a high RH range (RH > 50%), a frequency downshift of 2.6 kHz per 1% RH change was obtained, which was due to the change in elastic grapheme properties. The mass loading effect of the water layer was less effective at high temperature, resulting in a lower temperature coefficient of resonant frequency (TCF).     

Unidirectional variation of lattice constants of Al-N-codoped ZnO films by RF magnetron sputtering

Al-N-codoped ZnO films were fabricated by RF magnetron sputtering in the ambient of N₂ and O₂ on silicon (1 0 0) and homo-buffer layer, subsequently, annealed in O₂ at low pressure. X-ray diffraction (XRD) spectra show that as-grown and 600 °C annealed films grown by codoping method are prolonged along crystal c-axis. However, they are not prolonged in (0 0 1) plane vertical to c-axis. The films annealed at 800 °C are not prolonged in any directions. Codoping makes ZnO films unidirectional variation. X-ray photoelectron spectroscopy (XPS) shows that Al content hardly varies and N escapes with increasing annealing temperature from 600 °C to 800 °C.     

SAW spectral characteristics of the YZ-LiNbO3-thin-lead-film layered structure

An acousto-optical study of the effect of a lead film on propagation of high-power surface acoustic waves (SAW) along the Z direction on the Y cut of LiNbO₃ is reported. The presence of the metal film has been found to stimulate spatial oscillations of SAW components and suppress the onset of nonlinearity. If the film is more narrow than the SAW aperture, one observes considerable inflow of acoustic energy from the free surface to the film region. A study of the film-induced sound-velocity dispersion revealed it to have a linear pattern. An analysis of the results within the present theoretical models of soliton development showed that a soliton-like monopulse can form only if a very thin (～150 Å) lead film is present.     

Optical antsotropy in the plane parallel to the surface of obliquely evaporated gold films

An experimental study by means of a return-path type ellipsometer is described. The results can be explained qualitatively by assuming that the directions of the principal axes (X, Y, Z) are as follows: (1) With thinner (e.g. 70 Å) films, the Y-axis lies parallel to the intersection of the plane of incidence of the vapor beam and the film plane, the X-axis lying in the film plane. (2) With thicker (e.g. 210 Å) films, the Y-axis lies in the plane of incidence of the vapor beam making a certain angle with the film plane, the X-axis lying in the film plane.     

c-Axis orientation control of YBa2Cu3O7−x films grown on inclined-substrate-deposited MgO-buffered metallic substrates

Biaxially textured YBa₂Cu₃O_7−x (YBCO) films were grown on non-textured metal substrates with inclined-substrate-deposited (ISD) MgO as template. The biaxial texture feature of the films was examined by X-ray pole-figure analysis, φ-scan, and 2θ-scan. A tilt angle of 32° of the MgO[001] with respect to the substrate normal was observed. Epitaxial growth of YBCO films with c-axis tilt angle of 32° with respect to the substrate normal was obtained on these substrates with SrTiO₃(STO) as buffer layer. Whereas, by choosing yttria-stabilized ZrO₂ and CeO₂ instead of STO as buffer layer, a c-axis untilted YBCO film was obtained. Higher values of T_c=91 K and J_c=5.5×10⁵ A/cm² were obtained on the c-axis untilted YBCO films with 0.46 μm thickness at 77 K in zero field. Comparative studies revealed a unique role of CeO₂ in controlling the orientation of the YBCO films grown on ISD-MgO buffered metal substrates.     

The influence of different doping elements on microstructure, piezoelectric coefficient and resistivity of sputtered ZnO film

ZnO film is attractive for high frequency surface acoustic wave device application when it is coupled with diamond. In order to get good performance and reduce insertion loss of the device, it demands the ZnO film possessing high electrical resistivity and piezoelectric coefficient d₃₃. Doping ZnO film with some elements may be a desirable method. In this paper, the ZnO films undoped and doped with Cu, Ni, Co and Fe, respectively (doping concentration is 2.0 at.%) are prepared by magnetron sputtering. The effect of different dopants on the microstructure, piezoelectric coefficient d₃₃, and electrical resistivity of the film are investigated. The results indicate that Cu dopant can enhance the c-axis orientation and piezoelectric coefficient d₃₃, the Cu and Ni dopant can increase electrical resistivity of the ZnO film up to 10⁹ Ω cm. It is promising to fabricate the ZnO films doped with Cu for SAW device applications.     

Full-wave modeling of piezoelectric transducers for SAW acousto-optical interactions

In this paper we present an accurate and efficient numerical method for a rigorous full-wave analysis of interdigital transducers (IDT) for the excitation of surface acoustic waves on the piezoelectric substrate of acousto-optical devices. The problem is formulated in terms of an integral equation that is solved by the method of moments. The transducer input admittance and the power coupling factors to both surface and bulk waves are computed. Numerical results for some configurations of X-Y LiNbO₃ IDT for acousto-optic applications are in very good agreement with measured data. It is pointed out that bulk wave excitation may be a serious limitation in the design of efficient, wide band transducers for acousto-optical devices.     

Structural and optical properties of RF magnetron sputtered aluminum nitride films without external substrate heating

We report structural and optical properties of aluminum nitride (AlN) thin films prepared by RF magnetron sputtering. A ceramic AlN target was used to sputter deposit AlN films without external substrate heating in Ar-N₂ (1:1) ambient. The X-ray diffraction and high resolution transmission electron microscopy results revealed that the films were preferentially oriented along c-axis. Cross-sectional imaging revealed columnar growth perpendicular to the substrate. The secondary ion mass spectroscopy analysis confirmed that aluminum and nitrogen distribution was uniform within the thickness of the film. The optical band gap of 5.3 eV was evaluated by UV-vis spectroscopy. Photo-luminescence broad band was observed in the range of 420-600 nm with two maxima, centered at 433 nm and 466 nm wavelengths related to the energy states originated during the film growth. A structural property correlation has been carried out to explore the possible application of such important well oriented nano-structured two-dimensional semiconducting objects.     

Superconducting properties of Sm0.33Eu0.33Gd0.33Ba2Cu3Oy films by metal-organic deposition using metal 2-ethylhexanates

We have prepared Sm_0.33Eu_0.33Gd_0.33Ba₂Cu₃O_y (SEGBCO) films on LaAlO₃ single-crystal substrates by metal-organic deposition using 2-ethylhexanate solutions which contain no fluorine. The SEGBCO film fired at 850 °C under a low oxygen partial pressure of 2 × 10⁻⁶ atm exhibited strong c-axis oriented X-ray diffraction peaks and weak a/b-axis oriented peaks of the SEGBCO phase, and had a granular surface. High resolution cross-sectional transmission electron microscope images indicated the epitaxial growth of the SEGBCO film on the substrate with overgrowth of a/b-axis oriented grains. The critical temperature and critical current density values of the SEGBCO film was 86.5 K and 1.29 MA/cm², respectively, at 77.3 K at the self-field.     

Influence of the crystal orientation on the electrical properties of AlN thin films on LTCC substrates

In this study, the influence of the crystal orientation on the electrical properties of sputter deposited aluminium nitride (AlN) thin films on low temperature co-fired ceramics (LTCC) substrates is investigated. The degree of c-axis orientation can be tailored by the deposition conditions such as plasma power, gas pressure and gas composition in the deposition chamber. Due to the large surface roughness of LTCC substrates (R_a = ∼0.4 μm) the quality of thin films is lower compared to silicon. Between areas of columnar grains arranged perpendicular to the LTCC surface, defects like voids are generated due to the wavy surface characteristics. The impact of crystal orientation and temperature up to 400 °C on the electrical performance is evaluated, as these layers are targeted as potential candidates for dielectric heat spreaders on multilayered ceramic substrates for high frequency applications. These AlN thin films having a good c-axis orientation exhibit lower leakage current levels over the complete temperature range compared to those with a poor alignment with respect to this crystallographic plane. The leakage current behaviour, however, is dominated according to the Pool-Frenkel electron emission independent of the degree of c-axis orientation.     

Preparation and structural properties of YBCO films grown on GaN/c-sapphire hexagonal substrate

Epitaxial YBCO thin films have been grown on hexagonal GaN/c-sapphire substrates using DC magnetron sputtering and pulsed laser deposition. An MgO buffer layer has been inserted between the substrate and the YBCO film as a diffusion barrier. X-ray diffraction analysis indicates a c-axis oriented growth of the YBCO films. Φ-scan shows surprisingly twelve maxima. Transmission electron microscopy analyses confirm an epitaxial growth of the YBCO blocks with a superposition of three a-b YBCO planes rotated by 120° to each other. Auger electron spectroscopy and X-ray photoelectron spectroscopy reveal no surface contamination with Ga even if a maximum substrate temperature of 700 °C is applied.     

Laser-induced voltage characteristics of Bi2Sr2Co2Oy thin films on LaAlO3 substrates

We report the laser-induced voltage (LIV) effects in c-axis oriented Bi₂Sr₂Co₂O_y thin films grown on (0 0 1) LaAlO₃ substrates with the title angle α of 0°, 3°, 5° and 10° by a simple chemical solution deposition method. A large open-circuit voltage with the sensitivity of 300 mV/mJ is observed for the film on 10° tilting LaAlO₃ under a 308 nm irradiation with the pulse duration of 25 ns. When the film surface is irradiated by a 355 nm pulsed laser of 25 ps duration, a fast response with the rise time of 700 ps and the full width at half maximum of 1.5 ns is achieved. In addition, the experimental results reveal that the amplitude of the voltage signal is approximately proportional to sin 2α and the signal polarity is reversed when the film is irradiated from the substrate side rather than the film side, which suggests the LIV effects in Bi₂Sr₂Co₂O_y thin films originate from the anisotropic Seebeck coefficient of this material.     

Optoelectronic properties of LixAxNbO3 (A=Na, K, Rb, Cs, Fr) crystals

The structural and optoelectronic properties of Li_xA_xNbO₃ (A=Na, K, Rb, Cs, Fr and x=0, 0.5) compounds have been investigated by the generalized gradient approximation within density functional theory. The calculated fundamental direct band gap of pure LiNbO₃ is 3.32 eV. It is found that the substitution of alkali elements drastically change the optoelectronic nature of the compound from direct to indirect bandgap semiconductor and the fundamental gap also decreases. The nature of the compound is ionic with strong bonds between alkali ions and O, while there are partial covalent bonds between Nb and O. The calculated static refractive index of pure LiNbO₃ is 2.43 for the perpendicular plane to the c-axis, while 2.37 for the parallel plane to the c-axis. So these values are intensively dependent on the substitution of alkali metals. The calculated electron energy loss spectra are in good agreement with the experimental results. It also predicts some extra interesting peaks, which have not been observed in experiments.     

An optical study of the stretching absorption band near 3 microns from OH- defects in LiNbO3

A near infrared absorption band (λ = 2.87 μ), identified as the 0–1 stretching vibrational band of OH^- defects in LiNbO₃, has been observed at 6, 77, and 300 K. This band was completely polarized perpendicular to the crystallographic c-axis within experimental error and two peaks, separated by approximately 13 cm^?1, were resolved. Both the structure and optical anisotropy of this band were independent of stoichiometry and sample treatments and may be understood in terms of a simple model where protons are captured by O^2- anions forming OH^- defects whose orientations are determined by neighboring O^2- ions.     

Magnetic properties of Nd–Fe–B film magnets prepared by RF sputtering

Highly oriented films of ∼6 μm in thickness consisting of the Nd₂Fe₁₄B compound phase were obtained by a three-dimensional sputtering method at room temperature and the subsequent crystallization by annealing. The c-axis orientation and coercivity of film samples were sensitive to the sputtering parameters and annealing conditions. The optimum temperature and time for annealing were 650 °C and 30 min to show the highest coercivity without any deterioration for the orientation of Nd₂Fe₁₄B grains, and furthermore the degree of c-axis orientation was increased by decreasing the Ar gas pressure or input power for sputtering. The resultant film magnets with good magnetic properties of B_r=∼1.06 T, H_C=∼371 kA/m, and (BH)_max=∼160 kJ/m³ were obtained under the optimized parameters for sputtering.