Structural and mechanical characteristics of (1 0 3) AlN thin films prepared by radio frequency magnetron sputtering

The (1 0 3)-oriented aluminum nitride (AlN) thin film is an attractive piezoelectric material for the applications in surface acoustic wave and film bulk acoustic wave resonator devices. In this work, we repot structural and mechanical characteristics of (1 0 3) AlN thin films deposited onto (1 0 0) Si substrates with radio frequency magnetron sputtering at different sputtering powers at 150, 250, and 350 W. Comparisons were made on their crystalline structures with X-ray diffraction, surface morphologies with atomic force microscopy, mechanical properties with nanoindentation, and tribological responses with nanoscratch. Results indicate that for the sputtering power of 350 W, a high-quality (1 0 3) AlN thin film, whose hardness is 18.91 ± 1.03 GPa and Young's modulus is 242.26 ± 8.92 GPa, was obtained with the most compact surface condition.     

The influence of sputtering procedure on nanoindentation and nanoscratch behaviour of W-S-C film

Sulphides of tungsten with its lamellar structure - whereby weak van der Waals forces act between the layers - are commonly believed to be responsible for their excellent self-lubricating properties. The present investigation is undertaken in order to explore the possibility of using this film for MEMS application. In order to achieve this objective, W-S-C films are deposited on 100Cr6 steel using radio frequency magnetron sputtering. Carbon was incorporated in the films via three different ways: (1) using a reactive gas (CH₄), (2) by co-sputtering from separate targets (WS₂ and C targets) and, (3) by co-sputtering from a C target embedded with WS₂ pellets. Microstructural features and mechanical properties of these films are evaluated with the help of scanning electron microscopy and nanoindentation. The topography, structural features and scratch behaviour are analysed using atomic force microscopy, X-ray diffraction and nanoindenter. It is noted that the film deposited by sputtering two targets exhibits the highest hardness due to high oxygen content. The highest elastic modulus pertains to the film deposited from the carbon target containing WS₂ pellets as this film has amorphous structure and the minimum porosity. The friction coefficient under scratching is the highest for reactively sputtered film whereas it is the minimum for the film deposited from the carbon target containing WS₂ pellets as this film has amorphous structure and the minimum roughness.     

Preparation of hard magnetic materials in thin film form

We report on the preparation, by means of pulsed laser ablation deposition, of trilayers of nominal composition Cr/SmCo₅/Cr//Si with thicknesses in the order of 250/240/125 nm, respectively. According to the results of the structural, chemical and magnetic characterizations performed in our as-deposited samples, the Sm–Co layer was structurally amorphous, exhibited abrupt compositional interfaces with the capping and buffering layers, and coercivities of a few hundreds of Oe. Magnetic hardness was developed upon submitting the samples to current anneals under vacuum at temperatures in the range of 540–670 °C. The hardening process was followed in detail by correlating the phase distribution, the nature of the interlayer atomic diffusion processes, the occurrence of textures and the temperature dependence of the coercive force. From our results we conclude about (i) the occurrence of a large degree of Co diffusion/segregation, which results in the detection, from the diffraction and magnetometric results, of the presence of CoCr alloys in the treated samples, and (ii) the close correlation, evidenced from the fits of the temperature dependence of the coercive force to the micromagnetic model, between the coercivity optimization and the crystallinity enhancement of the SmCo₅ grains.     

Molecular dynamic simulations of nanoindentation in aluminum thin film on silicon substrate

In the present work, the nanoindentation of aluminum thin film on silicon substrate is investigated by three-dimensional molecular dynamic (MD) simulation. The film/substrate system is modeled by taking Lennard-Jones (LJ) potential to describe the interaction at the film-substrate interface. Different loading rate from 50 to 250 m/s is carried out in the simulation. The results showed that the hardness of the film increased with the loading rate. In order to study the effect of substrate on the mechanical properties of thin film, nanoindentation process on monolithic Al material is also simulated. The simulation results revealed that indentation pile-up in the aluminum film is significantly enhanced by the substrate. The substrate also affects the loading force during the nanoindentation. At the beginning of the indentation, the loading force is not affected by the substrate. Then, it is getting smaller caused by the interface. As the film is penetrated, the loading force increased rapidly caused by the hard substrate. These results were coincident with the previous reported experiments.     

Improvement in micro-structural and mechanical properties of zinc film by surface treatment with low temperature argon plasma

Nanocrystalline zinc films were deposited on gold coated borosilicate glass substrates by thermal evaporation method using zinc powders as the source material and then treated with argon plasma at various temperatures. From X-ray diffraction study, the as-deposited films are found to be metallic Zn and polycrystalline in nature. The crystalline nature improves with the increase of temperature up to 200 °C and decreases with the further increase of temperature to 300 °C. The binding energy observed for Zn 2p_3/2, and the binding energy separation between Zn 2p_3/2 and Zn 2p_1/2 in the X-ray photoelectron spectrum indicate that the films are metallic zinc films. Transmission electron microscopic study shows hexagonal shaped grains having size ∼58 nm upon treatment with Ar plasma. It is clearly shown the grain growth and distinct grain boundary with the increase in temperature. The average Young's modulus (E) and hardness (H) are measured to be 84 GPa and 4.0 GPa for as-deposited film, whereas 98 GPa and 5.8 GPa for plasma treated film at 200 °C. The enhancement in mechanical properties is attributed to improvement in crystalline nature of the film and better interlinking between grains and boundaries.     

SiOxNy thin films with variable refraction index: Microstructural, chemical and mechanical properties

In this work amorphous silicon oxynitride films with similar composition (ca. Si_0.40N_0.45O_0.10) were deposited by reactive magnetron sputtering from a pure Si target under different N₂-Ar mixtures. Rutherford backscattering (RBS) studies revealed that the coatings presented similar composition but different density. The mechanical properties evaluated by nanoindentation show also a dependence on the deposition conditions that does not correlate with a change in composition. An increase in nitrogen content in the gas phase results in a decrease of hardness and Young's modulus.The microstructural study by high resolution scanning electron microscopy (SEM-FEG) on non-metalized samples allowed the detection of a close porosity in the form of nano-voids (3-15 nm in size), particularly in the coatings prepared under pure N₂ gas. It has been shown how the presence of the close porosity allows tuning the refraction index of the films in a wide range of values without modifying significantly the chemical, thermal and mechanical stability of the film.     

薄膜太阳电池用纳米上转换材料制备及其特性研究

以应用于薄膜太阳电池为目的,采用水热法制备了掺杂稀土离子的纳米氟化钇钠上转换荧光材料.研究了稀土离子Yb³⁺/Er³⁺单独和共同掺杂对材料的晶体结构和光学性质的影响.制备的Yb^3＋/Er^3＋共掺材料兼顾了两种稀土离子的光吸收谱,吸收980nm和1530nm附近的红外光,并发出能够被薄膜太阳电池有效吸收利用的红光(653nm)和绿光(520,540nm).优化出较为合适的18％Yb³⁺,2％Er³⁺的掺杂比例,获得了具有较好上转换效果的纳米荧光颗粒材料.     

Optical and mechanical properties of vacuum evaporated vapour chopped polyaniline thin film

The paper reports the effect of chopping the vapour flow on properties of vacuum evaporated polyaniline thin films synthesized by aqueous polymerization pathway. The chopper was a metallic vane of V-shaped cut out placed between the substrate and boat in the path of evaporated vapour. It interrupted the flow of vapour at a constant rate. Fourier Transform Infra-red (FTIR) studies indicated that the vacuum evaporated films are more in reduced form and contain short chain oligomers. Improved adhesion and reduced intrinsic stress of polyaniline thin film due to chopping are obtained. Higher transmittance and lower refractive index films resulted due to the process of chopping as compared to the deposited films. Chopping also produces smoother surface morphology.     

Probing thermal properties of vanadium dioxide thin films by time-domain thermoreflectance without metal film

Vanadium dioxide(VO_2) is a strongly correlated material, and it has become known due to its sharp metal–insulator transition(MIT) near room temperature. Understanding the thermal properties and their change across MIT of VO_2 thin film is important for the applications of this material in various devices. Here, the changes in thermal conductivity of epitaxial and polycrystalline VO_2 thin film across MIT are probed by the time-domain thermoreflectance(TDTR) method.The measurements are performed in a direct way devoid of deposition of any metal thermoreflectance layer on the VO_2 film to attenuate the impact from extra thermal interfaces. It is demonstrated that the method is feasible for the VO_2 films with thickness values larger than 100 nm and beyond the phase transition region. The observed reasonable thermal conductivity change rates across MIT of VO_2 thin films with different crystal qualities are found to be correlated with the electrical conductivity change rate, which is different from the reported behavior of single crystal VO_2 nanowires. The recovery of the relationship between thermal conductivity and electrical conductivity in VO_2 film may be attributed to the increasing elastic electron scattering weight, caused by the defects in the film. This work demonstrates the possibility and limitation of investigating the thermal properties of VO_2 thin films by the TDTR method without depositing any metal thermoreflectance layer.     

Oxidation temperature dependent properties of MgO thin film on alumina

The magnesium oxide thin films were prepared by thermal oxidation (in air) of vacuum evaporated magnesium thin film on alumina. It was found that oxidation temperature (623 K, 675 K and 723 K) and thickness (103 nm and 546 nm) dependent effects were prominently manifested in the surface morphology. Electrical and microwave properties (8-12 GHz) of the MgO thin films were also carried out. X-ray diffraction showed orientation along (2 0 0) and (2 2 0) directions. Flowerlike morphology was observed from SEM and flake like morphology for films of higher thickness oxidized at higher temperatures. The magnesium oxide thin film showed NTC behavior. Microwave transmittance was found to increase with increase in oxidation temperature but was lower than alumina. Frequency and oxidation temperature dependent microwave permittivity was obtained. The microwave dielectric constant varied in the range 8.3-15.3.     

在半导体-金属相变温度附近氧化钒薄膜光学性质的异常变动

在可见光—近红外波段的不同波长下,测量了半导体-金属相变过程中氧化钒薄膜样品的反射率和透射率.在薄膜相变过程中,不同波段的反射率曲线和透射率曲线表现出不同的变化趋势.利用非相干光在薄膜中的多级反射-透射模型,计算了相变过程中不同波长下氧化钒薄膜的折射率n和消光系数k随温度的变化.结果表明,在相变温度附近氧化钒薄膜光学性质的异常变动,其原因既有薄膜的折射率和消光系数随波长的变化趋势不同,也有在吸收性薄膜中存在探测光多次反射和透射的累加效应.     

Effect of film morphology on the magnetic properties for Nd-Fe-B thin films

The microstructure and magnetic properties of Nd-Fe-B thin films with a particulate structure were investigated. The nominal thickness of the Nd-Fe-B layer (t_N) was varied from 2 to 50 nm on a (0 0 1) Mo buffer layer. The films were grown with their c-axis perpendicular to the plane, and the morphology of the film with t_N=2 nm was shown to be particulate from an atomic force microscope image. The slope of the initial magnetization curve became steeper by increasing the t_N value in the initial magnetization curve, indicating that the film morphology composed of single domain particles changed to that of multi-domain particles with growth. The film with t_N=8 nm, which had a structure consisting of a mixture of single and multiple domain particles, showed the maximum value of the coercivity measured in the direction perpendicular to the film plane (H_c) as 19.5 kOe.     

Structure and optoelectronic properties of multi-element oxide thin film

This paper focuses on analyzing structural and optoelectronic properties of (ZnSnCuTiNb)_1 − xO_x films. The results of XRD and HRTEM indicate that the (ZnSnCuTiNb)_1 − xO_x films are all of amorphous without any multi-phase structure. XPS analysis confirms that the increase of the oxygen content makes the cations electron binding energy higher, suggesting the removal of valence electrons or the extent of oxidation can change the optoelectronic properties of the films. The (ZnSnCuTiNb)_1 − xO_x films possess the characteristics of optoelectronic semiconductor whose oxygen content are 51.6 and 56 atom%. These films have carrier concentrations of 2.62 × 10²⁰ and 1.37 × 10¹⁷ cm⁻³, and conductivities (σ) of 57.2 and 9.45 × 10⁻³ (Ω cm)⁻¹, and indirect band gaps of 1.69 and 2.26 eV, respectively. They are n-type oxide semiconductors.     

Characteraction of Ag-doped ZnO thin film synthesized by sol–gel method and its using in thin film solar cells

Pure 2% and 4% Ag-doped ZnO thin films have been synthesized on glass substrates by sol–gel method. The structure, morphology and optical properties of the samples have been studied by X-ray diffractometer (XRD), scanning probe microscope, UV–vis spectrophotometer, respectively. The XRD result shows that the pure ZnO has a wurtzite hexagonal structure, no phase segregation is observed. The surface morphology of pure ZnO thin film shows that the grains are growing preferentially along the c-axis orientation perpendicular to the substrates. The transmittance spectra reveal that all samples have high transmittance above 90% in visible region. With Ag doping content increase, a red shift is observed. The performance of Ag-doped ZnO films using in thin film solar cells are simulated. The results show that 4% Ag-doped ZnO thin film can greatly improve the absorption of the cells. Compare to pure ZnO, solar cell's energy conversion efficiency improvement of 2.47% is obtained with 4% Ag doped ZnO thin film.     

Study of Ti addition in channel layers for In-Zn-O thin film transistors

Ti added In-Zn-O thin films and their application to thin film transistors were studied. The In-Zn-O films were deposited by pulsed plasma deposition using targets with various Ti contents added. High content of Ti in In-Zn-O films was found to induce a decrease in carrier concentration. The effect was attributed to suppression of oxygen vacancies by Ti incorporation. For thin film transistors with Ti added In-Zn-O as channel layer materials, threshold voltage showed positive shift as Ti content increases and field effect mobility was not decreased at the same time. Results of a bias stress experiment on device fabricated at room temperature are also given.     

Improvement in mechanical and optical properties of vapour chopped vacuum evaporated PANI/PMMA composite thin film

PANI/PMMA composite was synthesized by emulsion polymerization pathway and the composite thin film was obtained by vacuum evaporation. The effect of vapour chopping and varying PMMA concentration was also studied. The FTIR spectra showed that the PANI/PMMA composite thin film deposited as a short chain oligomers. Increase in transmittance and decrease in refractive index was obtained with increasing concentration of PMMA, which further increased the adhesion and decreased intrinsic stress. The vapour chopping improved its optical as well as mechanical properties and produced smoother surface morphology. Increase of PMMA made the film more amorphous and does not change its band gap.     

Structural, electrical and mechanical properties of NiO thin films grown by pulsed laser deposition

Nickel oxide (NiO) thin films were prepared by reactive pulsed laser deposition on thermally oxidized Si substrates in 10 Pa oxygen pressure. The substrate temperature during deposition was varied and its influence on the structural, electrical and nanomechanical properties was studied. It was proved that the structural properties were affected by the increase of substrate temperature improving the crystalline structure. Furthermore, a higher substrate temperature resulted in a thicker NiO film, which was attributed to an increased grain size. This effect influenced the electrical properties, too. Resistivity measurements showed that it increased with the increase of substrate temperature. For the first time, the nanomechanical properties of NiO films were studied. The formation and improvement of crystalline structure affected the nanomechanical properties. Nanoindentation testing of NiO thin films revealed an increase of hardness (H) and elastic modulus (E) and a decrease of surface roughness when increasing the substrate temperature.     

Strong visible photoluminescence in amorphous SiOx and SiOx : H thin films prepared by thermal evaporation of SiO powder

Amorphous SiO_x and SiO_x : H films were prepared by thermal evaporation of SiO powder in ultrahigh vacuum or under a flow of hydrogen ions onto silicon substrates maintained at 100°C. Photoluminescence (PL) can be seen in the visible range with the naked eye on the as-deposited samples without post-treatments. Composition and structure investigations were performed by infrared and Raman spectrometry experiments on films annealed at different temperatures. Hydrogen and oxygen bonding was studied by infrared spectrometry. The PL is attributed to the quantum confinement of excitons in a-Si clusters embedded in the a-SiO_x matrix. Our results demonstrate that oxygen creates an efficient potential barrier and no further passivation by hydrogen is necessary.     

Electrical conductivity and optical properties of ZnO nanostructured thin film

The electrical conductivity, structural and optical properties of ZnO nanostructured semiconductor thin film prepared by sol-gel spin coating method have been investigated. The X-ray diffraction result indicates that the ZnO film has the polycrystalline nature with average grain size of 28 nm. The optical transmittance spectrum indicates the average transmittance higher than 90% in visible region. The optical band gap, Urbach energy and optical constants (refractive index, extinction coefficient, real and imaginary parts of the dielectric constant) of the film were determined. The electrical conductivity of the film dependence of temperature was measured to identify the dominant conductivity mechanism. The conductivity mechanism of the film is the thermally activated band conduction. The electrical conductivity and optical results revealed that the ZnO film is an n-type nanostructured semiconductor with a direct band gap of about 3.30 eV at room temperature.     

非晶铟锌氧化物薄膜晶体管的低频噪声特性与分析

本文针对底栅结构非晶铟锌氧化物薄膜晶体管的低频噪声特性开展实验与理论研究.由实验结果可知:受铟锌氧化物与二氧化硅界面处缺陷态俘获与释放载流子效应的影响,器件沟道电流噪声功率谱密度随频率的变化遵循1/fγ(γ≈0.75)的变化规律;此外,器件沟道电流归一化噪声功率谱密度随沟道长度与沟道宽度的增加而减小,证明器件低频噪声来源于沟道的闪烁噪声,可忽略源漏结接触及寄生电阻对器件低频噪声的影响.最后,基于载流子数涨落及迁移率涨落模型,提取γ因子与平均Hooge因子,为评价材料及器件特性奠定基础.