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1.
Metallic oxynitrides have attracted the attention of several researchers in the last decade due to their versatile properties. Through the addition of a small amount of oxygen into a transition metal nitride film, the material's bonding states between ionic and covalent types can be tailored, thus opening a wide range of electrical, optical, mechanical and tribological responses. Among the oxynitrides, chromium oxynitride (CrNxOy) has many interesting applications in different technological fields. In the present work the electrical behavior of CrNxOy thin films, deposited by DC reactive magnetron sputtering, were investigated and correlated with their compositional and structural properties. The reactive gas flow, gas pressure, and target potential were monitored during the deposition in order to control the chemical composition, which depend strongly on reactive sputtering process. Depending on the particular deposition parameters that were selected, it was possible to identify three types of films with different growth conditions and physical properties. The electrical resistivity of the films, measured at room temperature, was found to depend strongly on the chemical composition of the samples.  相似文献   

2.
The crystalline structure and surface morphology of DyxOy dielectric films grown on Si substrates were studied by grazing incidence diffraction and absorption with use of synchrotron radiation and by atomic force microscopy. The crystalline structure and the roughness of DyxOy films were found to be strongly dependent on the deposition rate. The dielectric-silicon interface depends on the type of gas used in the annealing process. Moreover, results from the near edge X-ray absorption studies, have revealed that none of the examined films has a stoichiometry close to the Dy2O3. The level of stoichiometry is determined by the technological conditions. Nevertheless, MOS structures with DyxOy films (EOT ∼ 23 Å) have shown a rather good DyxOy-Si interface properties, which can be further improve by thermal annealing, and introducing of several additives, therefore DyxOy films can be considered as suitable candidates for gate dielectric in MOS devices.  相似文献   

3.
Titanium oxynitride (TiNxOy) films were deposited on polyethylene terephthalate (PET) substrates by means of a reactive radio frequency (RF) magnetron sputtering system in which the power density was the varied parameter. Experimental results show that the deposited TiNxOy films with a thickness of about 55 nm have similar contents of TiN, TiNxOy and TiO2 bonds, although they are deposited at different power densities. The TiNxOy films deposited at a lower power density have fewer internal defects and grain boundaries and possess higher activation energy and a lower rate of water vapor and oxygen transmission through TiNxOy/PET films.  相似文献   

4.
Hf1−xSixOy is an attractive candidate material for high-k dielectrics. We report in this work the deposition of ultra-thin Hf1−xSixOy films (0.1 ≤ x ≥ 0.6) on silicon substrate at 450 °C by UV-photo-induced chemical vapour deposition (UV-CVD) using 222 nm excimer lamps. Silicon(IV) and hafnium(IV) organic compounds were used as the precursors. Films from around 5 to 40 nm in thickness with refractive indices from 1.782 to 1.870 were grown. The deposition rate was found to be of 6 nm/min at a temperature of 450 °C. The physical, interfacial and electrical properties of hafnium silicate (Hf1−xSixOy) thin films were investigated by using X-ray photoelectron spectroscopy, ellipsometry, FT-IR, C-V and I-V measurements. XRD showed that they were basically amorphous, while Fourier transform infrared spectroscopy (FT-IR), clearly revealed Hf-O-Si absorption in the photo-CVD deposited Hf1−xSixOy films. Surface and interfacial properties were analysed by TEM and XPS. It is found that carbon content in the films deposited by UV-CVD is very low and it also decreases with increasing Si/(Si + Hf) ratio, as low as about 1 at.% at the Si/(Si + Hf) ratio of 60 at.%.  相似文献   

5.
Silicon oxynitride thin films were deposited by reactive r.f. sputtering from a silicon target. Different Ar:O2:N2 gas atmospheres were used at fixed power density (3.18 W cm−2) and pressure (0.4 Pa) to obtain various film composition. Pt-SiOxNy-Pt sandwich type structure was realised for electrical property investigations. The C-V measurements showed the absence of a Schottky barrier and thus confirmed that Pt electrode provides an ohmic contact. The evolution of the current density showed a decrease of the film conductivity when the oxygen concentration in the films increases. The various layer composition leads to two different conduction mechanisms which were identified as space charge limited current (SCLC) and Poole-Frenkel effect. Finally, the structural defects of the films were studied by EPR analysis and the spin densities were correlated to both the composition and the electrical behaviour of the films.  相似文献   

6.
WOx films were prepared by reactive dc magnetron sputtering using tungsten target. Sputtering was carried out at a total pressure of 1.2 Pa using a mixture of argon plus oxygen in an effort to determine the influence of the oxygen partial pressure on structural and optical properties of the films. The deposition rate decreases significantly as the surface of the target is oxidized. X-Ray diffraction revealed the amorphous nature of all the films prepared at oxygen partial pressures higher than 1.71×10−3 Pa. For higher oxygen partial pressures, fully transparent films were deposited, which showed a slight increase in optical band gap with increasing oxygen partial pressure, while the refractive index was simultaneously decreased.  相似文献   

7.
Hafnium oxynitride (HfOxNy) gate dielectric has been deposited on Si (1 0 0) by means of radio frequency (rf) reactive sputtering using directly a HfO2 target in N2/Ar ambient. The thermal stability and microstructural characteristics for the HfOxNy films have been investigated. XPS results confirmed that nitrogen was successfully incorporated into the HfO2 films. XRD analyses showed that the HfOxNy films remain amorphous after 800 °C annealing in N2 ambient. Meanwhile the HfOxNy films can also effectively suppress oxygen diffusion during high temperature annealing and prevent interface layer from forming between HfOxNy films and Si substrates. AFM measurements demonstrated that surface roughness of the HfOxNy films increase slightly as compared to those pure HfO2 films after post deposition annealing. By virtue of building reasonable model structure, the optical properties of the HfOxNy films have been discussed in detail.  相似文献   

8.
The effects of HfOxNy on the electrical property of HfOxNy-HfO2-HfOxNy sandwich-stack (signed as SS) films were investigated. Excellent electrical performances were achieved in SS films, with a high dielectric constant of 16 and a low leakage current of ∼2 × 10−8 A/cm2 at 1 MV/cm. Schottky (SK) emission and Frenkel-Poole (PF) emission are found to be the dominant mechanisms for the current conduction behavior. After a long time stress, the flat-band voltage shift in the SS film is much smaller than that in a pure HfOxNy film indicating fewer charge traps existed in the SS film. Based on the experiments, the new SS structure is more favorable for the improvement of electrical performances than a pure HfOxNy or HfO2 structure.  相似文献   

9.
The dependence of the electrical properties of SrxBiyTa2O9 thin films on the (Bi/Sr ratio 1.6, 2.3, 2.8, 3.4) has been investigated. The SrxBiyTa2O9 ferroelectric thin films were synthesized on Pt/Ti/SiO2/Si substrates using the pulsed laser deposition method. Saturation polarization (Pst) and coercive field (2Ec) depend on the Bi/Sr ratio. Pst increases while Ec decreases with an increase in Bi/Sr ratio. Atomic Force Microscopy images show that the grain size grows with increasing Bi/Sr ratio. It is observed that the impedance behavior in SrxBiyTa2O9 thin film, conforms to the Constant Phase Element (CPE) model. It is believed that the diffuse charges at the grain boundary build up a surface polarization because the impedance behavior close to pure capacitor with grain size increased.  相似文献   

10.
Boron-doped ZnO1-xSx (ZnO1-xSx:B) thin films were fabricated by metalorganic chemical vapor deposition (MOCVD). We investigated the structural, optical, and electrical properties of the ZnO1-xSx:B thin films. X-ray diffraction patterns showed that, except for the ZnO:B (x?=?0) and ZnS:B (x?=?1) thin films, the ZnO1-xSx:B thin films exhibit amorphous characters. Optical transmittance spectra were analyzed to estimate the band gaps of the thin films with different S content. All thin films showed direct band gaps ranging from 3.34?eV (ZnO:B) to 3.49?eV (ZnS:B). The influence of sulfur content on carrier concentration, electrical resistivity, and Hall mobility of the ZnO1-xSx:B thin films were analyzed from Hall effect measurements measured at temperatures ranging from liquid nitrogen temperature to room temperature. The ZnO1-xSx:B thin films exhibited n-type electrical conductivity except for ZnS:B, which was not measurable in this study due to its high resistivity (>100?Ω?cm).  相似文献   

11.
This paper investigates the structure and surface characteristics, and electrical properties of the polycrystalline silicon-germanium (poly-Si1−xGex) alloy thin films, deposited by vertical reduced pressure CVD (RPCVD) in the temperature range between 500 and 750 °C and a total pressure of 5 or 10 Torr. The samples exhibited a very uniform good quality films formation, with smooth surface with rms roughness as low as 7 nm for all temperature range, Ge mole fraction up to 32% (at 600 °C), textures of 〈2 2 0〉 preferred orientation at lower temperatures and strong 〈1 1 1〉 at 750 °C, for both 5 and 10 Torr deposition pressures. The 31P+ and 11B+ doped poly-Si1−xGex films exhibited always lower electrical resistivity values in comparison to similar poly-Si films, regardless of the employed anneal temperature or implantat dose. The results indicated also that poly-Si1−xGex films require much lower temperature and ion implant dose than poly-Si to achieve the same film resistivity. These characteristics indicate a high quality of obtained poly-Si1−xGex films, suitable as a gate electrode material for submicron CMOS devices.  相似文献   

12.
Y.D. Su 《Applied Surface Science》2009,255(18):8164-8170
We deposit ternary WCxNy thin films on Si (1 0 0) substrates at 500 °C using direct current (DC) reactive magnetron sputtering in a mixture of CH4/N2/Ar discharge, and explore the effects of substrate bias (Vb) on the intrinsic stress, preferred orientation and phase transition for the obtained films by virtue of X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and selective area electron diffraction (SAED). We find that with increasing the absolute value of Vb up to 200 V the carbon (x) and nitrogen (y) atom concentrations of WCxNy films keep almost constant with the values of 0.75 and 0.25, respectively. The XPS and SAED results, combined with the density-functional theory (DFT) calculations on the electronic structure of WC0.75N0.25, show our obtained WCxNy films are single-phase of carbonitrides. Furthermore, we find that the compressive stress sharply increases with increasing the absolute value of Vb, which leads to a pronounced change in the preferred orientation and phase structure for the film, in which a phase transition from cubic β-WCxNy to hexagonal α-WCxNy occurs as Vb is in the range of −40 to −120 V. In order to reveal the relationship between the stress and phase transition as well as preferred orientation, the DFT calculations are used to obtain the elastic constants for β-WCxNy and α-WCxNy. The calculated results show that the preferred orientation is dependent on the competition between strain energy and surface energy, and the phase transition can be attributed to a decrease in the strain energy.  相似文献   

13.
The ternary semiconductors compounds are found to be very useful in the fabrication of thin film devices. This paper reports the preparation of CdSexTe1?x films (1 ? x ? 0) in the thickness range 1000–3000 Å by vacuum evaporation technique onto glass and mica substrates held at temperatures, 303 to 623 K in a vacuum better than 5 × 10?6 torr. The films were characterised by determining their composition and structure. The structure of the films, examined using XRD and TEM techniques, was found to be cubic (zincblende) in the entire composition range. The electrical resistivity and Hall mobilities have been determined as a function of film composition and deposition temperature.  相似文献   

14.
The electrochemical behaviors of BiIII, TeIV and SbIII single ions and their mixtures were investigated in nitric acid and hydrochloric acid system separately. Based on which, BixSb2−xTey thermoelectric films were prepared by potentiostatic electrodeposition from the solutions with different concentrations of BiIII, TeIV and SbIII in the two acid systems. The morphologies, compositions, structures, Seebeck coefficients and resistivities of the deposited thin films were characterized and compared by ESEM (or FESEM), EDS, XRD, Seebeck coefficient measurement system and four-probe resistivity measuring device respectively. The results show that although BixSb2−xTey thermoelectric thin film which structure is consistent with the standard pattern of Bi0.5Sb1.5Te3 can be gained in both of the two acid solutions by adjusting the deposition potential, their morphologies and thermoelectric properties have big differences in different acid solutions.  相似文献   

15.
Zr-Ti and Hf-Ti composite nitrates were successfully developed as single-source precursors for the chemical vapor deposition (CVD) of ZrxTi1−xO2 and HfxTi1−xO2 thin films. The Zr-Ti nitrate can be assumed as a solid solution of the individual Zr and Ti nitrates, and the Zr/Ti molar ratio in the deposited ZrxTi1−xO2 films is consistent with that in the precursor. The Hf-Ti nitrate appears to be a mixture of the Hf and Ti nitrates and the composition of the deposited HfxTi1−xO2 films depends remarkably on the heating time of precursor. Both ZrxTi1−xO2 and HfxTi1−xO2 films exhibit trade-off properties between band gap and dielectric constant. The obtained results suggest that ZrxTi1−xO2 and HfxTi1−xO2 films are promising candidates for gate dielectric application to improve the scalability and reduce the leakage current of the future complementary metal-oxide-semiconductor (CMOS) devices.  相似文献   

16.
The CrNxOyCz coatings were deposited by planar DC reactive magnetron sputtering onto AZ31 Mg alloy and high speed tool steel (HSTS) substrates at a substrate temperature of 200 °C. The effect of N2 content on composition and structure of the CrNxOyCz coatings was investigated. The structure of the CrNxOyCz coatings was analyzed by a glancing angle X-ray diffraction (GXRD). The cross-section morphology and thickness of the CrNxOyCz coatings were checked by a field emission scanning electron microscope (FESEM), and the composition profile and chemical state were carried out by an X-ray photoelectron spectroscopy (XPS). The experimental results showed that the structure and phase composition of the CrNxOyCz coatings depended on N2 content. The evolution of the structure of CrNxOyCz coatings was consistent with CrNx-based coatings, and the CrNxOyCz coatings contained Cr2O3, CrO2, CrO, Cr3C2, CrNx (Cr, CrN, Cr2N), as well as different chromium oxynitride. However, the carbide and oxynitride were oxidized after annealing.  相似文献   

17.
Nb-doped TiO2−x thin films were deposited using a 1 at% niobium doped titanium target by RF reactive magnetron sputtering at various oxygen partial pressures (pO2). The films appeared amorphous in the pO2 range of 4.4–4.7% with resistivity ranging from 0.39 Ω cm to 2.48 Ω cm. Compared to pure TiO2−x films, the resistivity of the Nb-doped TiO2−x films did not change sensitively with the oxygen partial pressure, indicating that the resistivity of the films can be accurately controlled. 1/f noise parameter of Nb-doped TiO2−x films were found to decrease largely while the measured temperature coefficient of resistance (TCR) of the films was still high. The obtained results indicate that Nb-doped TiO2−x films have great potential as an alternative bolometric material.  相似文献   

18.
Thin films of samples of the glassy SxSe100−x system with 0 ≤ x ≤ 7.28 have been prepared by thermal evaporation technique at room temperature (300 K). X-ray investigations show that the structure of pure selenium (Se) does change seriously by the addition of small amount of sulphur S ≤7.28%. The lattice parameters were determined as a function of sulphur content. Results of differential thermal analysis (DTA) of the glassy compositions of the system SxSe100−x were discussed. The characteristic temperatures (Tg, Tc and Tm) were evaluated. Dark electrical resistivities, ρ, of SxSe100−x thin films with different thicknesses from 100 to 500 nm, were measured in the temperature range from 300 to 423 K. Two distinct linear parts with different activation energies were observed. The variation of electrical resistivity of examined compositions has been discussed as a function of the film thickness, temperature and the sulphur content. The application of Mott model for the phonon assisted hopping of small polarons gave the same two activation energies obtained from the resistivity temperature calculations.  相似文献   

19.
Titanium oxynitride (TiNxOy) films were deposited on polyethylene terephthalate (PET) substrates by means of a reactive radio frequency (RF) magnetron sputtering system in which the power density and substrate bias were the varied parameters. Experimental results show that the deposited TiNxOy films exhibited an amorphous or a columnar structure with fine crystalline dependent on power density. The deposition rate increases significantly in conjunction as the power density increases from 2 W/cm2 to 7 W/cm2. The maximum deposition rate occurs, as the substrate bias is −40 V at a certain power densities chosen in this study. The film's roughness slightly decreases with increasing substrate bias. The TiNxOy films deposited at power densities above 4 W/cm2 show a steady Ti:N:O ratio of about 1:1:0.8. The water vapor and oxygen transmission rates of the TiNxOy films reach values as low as 0.98 g/m2-day-atm and 0.60 cm3/m2-day-atm which are about 6 and 47 times lower than those of the uncoated PET substrate, respectively. These transmission rates are comparable to those of DLC, carbon-based and Al2O3 barrier films. Therefore, TiNxOy films are potential candidates to be used as a gas permeation barrier for PET substrate.  相似文献   

20.
Ternary alloyed CdS1−xSex thin films of variable composition ‘x’ were grown by the simple and economical chemical bath deposition technique. The as-grown thin films were characterized for structural, compositional, surface morphological, optical and electrical studies. The X-ray diffraction (XRD) patterns of the sample indicated that all the samples were polycrystalline in nature with hexagonal structure. Scanning electron microscopy (SEM) micrographs showed uniform morphology with spherical shaped grains distributed over entire glass substrate. EDAX studies confirmed that the CdS1−xSex films were having approximately same stoichiometry initially as well as finally. Room temperature optical measurements showed that band gap engineering could be realized in CdS1−xSex thin films via modulation in composition ‘x’. Electrical resistivity of CdS1−xSex thin films for various compositions was found to be low. The broad and fine tunable band gap properties of ternary CdS1−xSex thin films have potential applications in opto-electronic devices.  相似文献   

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